Ferrimagnetism, antiferromagnetism, and magnetic frustration in La2-xSrxCuRuO6 (0 <= x <= 1)

We studied structural and magnetic properties of a series of insulating double perovskite compounds, La2-xSrxCuRuO6 (0 <= x <= 1), representing doping via A-site substitution. The end members La2CuRuO6 and LaSrCuRuO6 form in monoclinic structure while the intermediate Sr doped compounds stabilize in triclinic structure. The Cu and Ru ions sit on alternate B sites of the perovskite lattice with similar to 15% antisite defects in the undoped sample while the Sr-doped samples show a tendency to higher ordering at B sites. The undoped (x = 0) compound shows a ferrimagnetic-like behavior at low temperatures. In surprising contrast to the usual expectation of an enhancement of ferromagnetic interaction on doping, an antiferromagnetic-like ground state is realized for all doped samples (x > 0). Heat capacity measurements indicate the absence of any long-range magnetic order in any of these compounds. The magnetic relaxation and memory effects observed in all compounds suggest glassy dynamical properties associated with magnetic disorder and frustration. We show that the observed magnetic properties are dominated by the competition between the nearest-neighbor Ru-O-Cu 180 degrees superexchange interaction and the next-nearest-neighbor Ru-O-O-Ru 90 degrees superexchange interaction as well as by the formation of antisite defects with interchanged Cu and Ru positions. Our calculated exchange interaction parameters from first principles calculations for x = 0 and x = 1 support this interpretation.

Orthogonal biofunctionalization of magnetic nanoparticles via ``clickable'' poly(ethylene glycol) silanes: a ``universal ligand'' strategy to design stealth and target-specific nanocarriers

The present work demonstrates a novel strategy to synthesize orthogonally bio-engineered magnetonanohybrids (MNPs) through the design of versatile, biocompatible linkers whose structure includes: (i) a robust anchor to bind with metal-oxide surfaces; (ii) tailored surface groups to act as spacers and (iii) a general method to implement orthogonal functionalizations of the substrate via ``click chemistry''. Ligands that possess the synthetic generality of features (i)-(iii) are categorized as ``universal ligands''. Herein, we report the synthesis of a novel, azido-terminated poly(ethylene glycol) (PEG) silane that can easily self-assemble on MNPs through hetero-condensation between surface hydroxyl groups and the silane end of the ligand, and simultaneously provide multiple clickable sites for high density, chemoselective bio-conjugation. To establish the universal-ligand-strategy, we clicked alkyl-functionalized folate onto the surface of PEGylated MNPs. By further integrating a near-infrared fluorescent (NIRF) marker (Alexa-Fluor 647) with MNPs, we demonstrated their folate-receptor mediated internalization inside cancer cells and subsequent translocation into lysosomes and mitochondria. Ex vivo NIRF imaging established that the azido-PEG-silane developed in course of the study can effectively reduce the sequestration of MNPs by macrophage organs (viz. liver and spleen). These folate-PEG-MNPs were not only stealth and noncytotoxic but their dual optical and magnetic properties aided in tracking their whereabouts through combined magnetic resonance and optical imaging. Together, these results provided a strong motivation for the future use of the ``universal ligand'' strategy towards development of ``smart'' nanohybrids for theragnostic applications.

Structural, electrical and dielectric properties of sputtered TiO2 films for Al/TiO2/Si capacitors

Metal-oxide semiconductor capacitors based on titanium dioxide (TiO2) gate dielectrics were prepared by RF magnetron sputtering technique. The deposited films were post-annealed at temperatures in the range 773-1173 K in air for 1 hour. The effect of annealing temperature on the structural properties of TiO2 films was investigated by X-ray diffraction and Raman spectroscopy, the surface morphology was studied by atomic force microscopy (AFM) and the electrical properties of Al/TiO2/p-Si structure were measured recording capacitance-voltage and current-voltage characteristics. The as-deposited films and the films annealed at temperatures lower than 773 K formed in the anatase phase, while those annealed at temperatures higher than 973 K were made of mixtures of the rutile and anatase phases. FTIR analysis revealed that, in the case of films annealed at 1173 K, an interfacial layer had formed, thereby reducing the dielectric constant. The dielectric constant of the as-deposited films was 14 and increased from 25 to 50 with increases in the annealing temperature from 773 to 973 K. The leakage current density of as-deposited films was 1.7 x 10(-5) and decreased from 4.7 X 10(-6) to 3.5 x 10(-9) A/cm(2) with increases in the annealing temperature from 773 to 1173 K. The electrical conduction in the Al/TiO2/p-Si structures was studied on the basis of the plots of Schottky emission, Poole-Frenkel emission and Fowler-Nordheim tunnelling. The effect of structural changes on the current-voltage and capacitance-voltage characteristics of Al/TiO2/p-Si capacitors was also discussed.

Composition, structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films

Thin films of alumina (Al2O3) were deposited over Si < 1 0 0 > substrates at room temperature at an oxygen gas pressure of 0.03 Pa and sputtering power of 60 W using DC reactive magnetron sputtering. The composition of the as-deposited film was analyzed by X-ray photoelectron spectroscopy and the O/Al atomic ratio was found to be 1.72. The films were then annealed in vacuum to 350, 550 and 750 degrees C and X-ray diffraction results revealed that both as-deposited and post deposition annealed films were amorphous. The surface morphology and topography of the films was studied using scanning electron microscopy and atomic force microscopy, respectively. A progressive decrease in the root mean square (RMS) roughness of the films from 1.53 nm to 0.7 nm was observed with increase in the annealing temperature. Al-Al2O3-Al thin film capacitors were then fabricated on p-type Si < 1 0 0 > substrate to study the effect of temperature and frequency on the dielectric property of the films and the results are discussed.

CMOS-Compatible and Scalable Deposition of Nanocrystalline Zinc Ferrite Thin Film to Improve Inductance Density of Integrated RF Inductor

Development towards the combination of miniaturization and improved functionality of RFIC has been stalled due to the lack of high-performance integrated inductors. To meet this challenge, integration of magnetic material with high permeability as well as low conductivity is a must. Ferrite films are excellent candidates for RF devices due to their low cost, high resistivity, and low eddy current losses. Unlike its bulk counterpart, nanocrystalline zinc ferrite, because of partial inversion in the spinel structure, exhibits novel magnetic properties suitable for RF applications. However, most scalable ferrite film deposition processes require either high temperature or expensive equipment or both. We report a novel low temperature (< 200 degrees C) solution-based deposition process for obtaining high quality, polycrystalline zinc ferrite thin films (ZFTF) on Si (100) and on CMOS-foundry-fabricated spiral inductor structures, rapidly, using safe solvents and precursors. An enhancement of up to 20% at 5 GHz in the inductance of a fabricated device was achieved due to the deposited ZFTF. Substantial inductance enhancement requires sufficiently thick films and our reported process is capable of depositing smooth, uniform films as thick as similar to 20 mu m just by altering the solution composition. The method is capable of depositing film conformally on a surface with complex geometry. As it requires neither a vacuum system nor any post-deposition processing, the method reported here has a low thermal budget, making it compatible with modern CMOS process flow.

Effect of Gd3+ on dielectric and magnetic properties of Y3Fe5O12

The Gd3+ doped Y3-xGdxFe5O12 (x=0.0, 0.05, 0.15, and 0.25) nanopowders were prepared using modified sol-gel route. The structural characterizations such as X-ray diffraction, transmission electron microscopy has been carried out. The nanopowders were sintered at 700 degrees C/3 h. The lattice parameters and density of the samples were increased with an increase of Gd3+ concentration. The microstructure was analyzed using atomic force microscopy. The room temperature dielectric (epsilon' and epsilon `') and magnetic (mu' and mu `') properties were measured in the frequency range 5-50 GHz. with Gd3+ the dielectric properties were enhanced, but there is a decrease in the magnetic properties. The room temperature magnetization studies were carried out up to 1.5 T. the saturation and remnant magnetization were decreased with an increase of gadolinium concentration. These garnets have low permeability, low losses and a broad distribution of FMR line width which makes them a promising material for microwave devices can be used in the high frequency range i.e. up to 50 GHz. (C) 2013 Elsevier BM. All rights reserved.

Magnetic and dielectric interactions in nano zinc ferrite powder: Prepared by self-sustainable propellant chemistry technique

The structural, magnetic and dielectric properties of nano zinc ferrite prepared by the propellant chemistry technique are studied. The PXRD measurement at room temperature reveal that the compound is in cubic spinel phase, belong to the space group Fd (3) over barm. The unit cell parameters have been estimated from Rietveld refinement. The calculated force constants from FTIR spectrum corresponding to octahedral and tetrahedral sites at 375 and 542 cm(-1) are 6.61 x 10(2) and 3.77 x 10(2) N m(-1) respectively; these values are slightly higher compared to the other ferrite systems. Magnetic hysteresis and EPR spectra show superparamagnetic property nearly to room temperature due to comparison values between magnetic anisotropy energy and the thermal energy. The calculated values of saturation magnetization, remenant magnetization, coercive field and magnetic moment supports for the existence of multi domain particles in the sample. The temperature dependent magnetic field shows the spin freezing state at 30 K and the blocking temperature at above room temperature. The frequency dependent dielectric interactions show the variation of dielectric constant, dielectric loss and impedance as similar to other ferrite systems. The AC conductivity in the prepared sample is due to the presence of electrons, holes and polarons. The synthesized material is suitable for nano-electronics and biomedical applications. (C) 2014 Elsevier B.V. All rights reserved.

Effect of Sm3+ on dielectric and magnetic properties of Y3Fe5O12 nanoparticles

The Sm3+ doped Y3-xSmxFe5O12 (x = 0-3) nanopowders were prepared using modified sol-gel route. The crystalline structure and morphology was confirmed by X-ray diffraction and atomic force microscopy. The nanopowders were sintered at 950 degrees C/90 min using microwave sintering method. The lattice parameters and density of the samples were increased with an increase of Sm3+ concentration. The room temperature dielectric (epsilon' and epsilon `') and magnetic (mu' and mu `') properties were measured in the frequency range up to 20 GHz. The room temperature magnetization studies were carried out using Vibrating sample magnetometer using filed of 1.5 T. Results of VSM show that the saturation and remnant magnetization of Y3-xSmxFe5O12 (0-3) decreases on increasing the Sm concentration (x). The low values of magnetic (mu' and mu `') properties makes them a good candidates for microwave devices, which can be operated in the high frequency range.

Morphological Evolution in Air-Stable Metallic Iron Nanostructures and Their Magnetic Study

Iron nanostructures with morphology ranging from discrete nanoparticles to nearly monodisperse hierarchical nanostructures have been successfully synthesized using solvated metal atom dispersion (SMAD) method. Such a morphological evolution was realized by tuning the molar ratio of ligand to metal. Surface energy minimization in confluence with strong magnetic interactions and ligand-based stabilization results in the formation of nanospheres of iron. The as-prepared amorphous iron nanostructures exhibit remarkably high coercivity in comparison to the discrete nanoparticles and bulk counterpart. Annealing the as-prepared amorphous Fe nanostructures under anaerobic conditions affords air-stable carbon-encapsulated Fe(0) and Fe3C nanostructures with retention of the morphology. The resulting nanostructures were thoroughly analyzed by powder X-ray diffraction (PXRD), thermogravimetric analysis (TGA), transmission electron microscopy (TEM), and Raman spectroscopy. TGA brought out that Fe3C nanostructures are more robust toward oxidation than those of a-Fe. Finally, detailed magnetic studies were carried out by superconducting quantum interference device (SQUID) magnetometer and it was found that the magnetic properties remain conserved even upon exposure of the annealed samples to ambient conditions for months.

The Relationship Between Solar Coronal X-Ray Brightness and Active Region Magnetic Fields: A Study Using High-Resolution Hinode Observations

By using high-resolution observations of nearly co-temporal and co-spatial Solar Optical Telescope spectropolarimeter and X-Ray Telescope coronal X-ray data onboard Hinode, we revisit the problematic relationship between global magnetic quantities and coronal X-ray brightness. Co-aligned vector magnetogram and X-ray data were used for this study. The total X-ray brightness over active regions is well correlated with integrated magnetic quantities such as the total unsigned magnetic flux, the total unsigned vertical current, and the area-integrated square of the vertical and horizontal magnetic fields. On accounting for the inter-dependence of the magnetic quantities, we inferred that the total magnetic flux is the primary determinant of the observed integrated X-ray brightness. Our observations indicate that a stronger coronal X-ray flux is not related to a higher non-potentiality of active-region magnetic fields. The data even suggest a slightly negative correlation between X-ray brightness and a proxy of active-region non-potentiality. Although there are small numerical differences in the established correlations, the main conclusions are qualitatively consistent over two different X-ray filters, the Al-poly and Ti-poly filters, which confirms the strength of our conclusions and validate and extend earlier studies that used low-resolution data. We discuss the implications of our results and the constraints they set on theories of solar coronal heating.

Structural and magnetic properties of Dy3+ doped Y3Fe5O12 for microwave devices

The Dy3+ doped Y3-xDyxFe5O12 (x=0-3) nanopowders were prepared using microwave hydrothermal route. The structural and morphological studies were analyzed using transmission electron microscope, X-ray diffractometer and field emission scanning electron microscope. The nanopowders were sintered at 900 degrees C/90 min using microwave furnace. Dense ceramics with theoretical density of around 95% was obtained. Ferro magnetic resonance (FMR) spectrum and microwave absorption spectrum of Dy3+ doped YIG were studied, the signal exhibits a resonance character for all Dy3+ variations. It was observed that the location of the FMR signal peak at the field axes monotonically shifts to higher field with increasing Dy3+ content. The dielectric and magnetic properties (epsilon', epsilon `', mu' and mu `') of Dy3+ doped YIG were studied over a wide range of frequency (1-50 GHz). With increase of Dy3+ both epsilon' and mu' decreased. The low values of dielectric, magnetic properties and broad distribution of FMR line width of these ceramics are opening the real opportunity to use them for microwave devices above K- band frequency. (C) 2015 Elsevier Ltd. All rights reserved.

Comparative study of magnetic ordering in bulk and nanoparticles of Sm0.65Ca0.35MnO3: Magnetization and electron magnetic resonance measurements

To explore the effect of size reduction to nanoscale on the hole doped Sm0.65Ca0.35MnO3 compound, dc magnetic measurements and electron magnetic resonance (EMR) were done on bulk and nanoparticle samples in the temperature range 10 <= T <= 300 K. Magnetization measurement showed that the bulk sample undergoes a charge ordering transition at 240K and shows a mixed magnetic phase at low temperature. However, the nanosample underwent a ferromagnetic transition at 75 K, and the charge ordered state was destabilized on size reduction down to nanoscale. The low-temperature ferromagnetic component is found to be enhanced in nanoparticles as compared to their bulk counterpart. Interestingly around room temperature, bulk particles show higher magnetization where as at low temperature nanoparticles show higher magnetization. Ferromagnetism in the bulk is due to super exchange where as ferromagnetism in nanoparticles is due to uncompensated spins of the surface layer. Temperature variation of EMR parameters correlates well with the results of magnetic measurements. The magnetic behaviour of the nanoparticles is understood in terms of the core shell scenario. (C) 2015 AIP Publishing LLC.

Structural and Optical Modification in Bi doped As40S60 Thin Films.

The influence of substitution of Bi atom instead of S atoms on the structural and optical properties of thin films of As40S60 are reported. The density is found to be increased with the addition Bi heavy metal into As2S3. The amorphous to polycrystalline structure of the bulk sample is observed for Bi more than 7%. The glass transition temperature is found to be decreased with addition of Bi. The absorption edge shifts to shorter wavelength, thereby decreasing optical band gap of BixAs(40)S(60-x) (x= 0,2 and 4% here) film. The optical parameter change is discussed from the stand point of chemical bonds formed in the films and related to the defect states produced due to incorporation of Bi atoms in place of chalcogenide S atoms.

Measuring the magnetic-field-dependent chemical potential of a low-density three-dimensional electron gas in n-GaAs and extracting its magnetic susceptibility

We report the magnetic-field-dependent shift of the electron chemical potential in bulk, n-type GaAs at room temperature. A transient voltage of similar to 100 mu V was measured across a Au-Al2O3-GaAs metal-oxide-semiconductor capacitor in a pulsed magnetic field of similar to 6 T. Several spurious voltages larger than the signal that had plagued earlier researchers performing similar experiments were carefully eliminated. The itinerant magnetic susceptibility of GaAs is extracted from the experimentally measured data for four different doping densities, including one as low as 5 x 10(15) cm(-3). Though the susceptibility in GaAs is dominated by Landau-Peierls diamagnetism, the experimental technique demonstrated can be a powerful tool for extracting the total free carrier magnetization of any electron system. The method is also virtually independent of the carrier concentration and is expected to work better in the nondegenerate limit. Such experiments had been successfully performed in two-dimensional electron gases at cryogenic temperatures. However, an unambiguous report on having observed this effect in any three-dimensional electron gas has been lacking. We highlight the 50 year old literature of various trials and discuss the key details of our experiment that were essential for its success. The technique can be used to unambiguously yield only the itinerant part of the magnetic susceptibility of complex materials such as magnetic semiconductors and hexaborides, and thus shed light on the origin of ferromagnetism in such systems.

Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.