Expediency of Penetration Ratio and Evaluation of Mean Throughput for Safety and Commercial Applications in VANETs

Vehicular ad hoc network (VANET) applications are principally categorized into safety and commercial applications. Efficient traffic management for routing an emergency vehicle is of paramount importance in safety applications of VANETs. In the first case, a typical example of a high dense urban scenario is considered to demonstrate the role of penetration ratio for achieving reduced travel time between source and destination points. The major requirement for testing these VANET applications is a realistic simulation approach which would justify the results prior to actual deployment. A Traffic Simulator coupled with a Network Simulator using a feedback loop feature is apt for realistic simulation of VANETs. Thus, in this paper, we develop the safety application using traffic control interface (TraCI), which couples SUMO (traffic simulator) and NS2 (network simulator). Likewise, the mean throughput is one of the necessary performance measures for commercial applications of VANETs. In the next case, commercial applications have been considered wherein the data is transferred amongst vehicles (V2V) and between roadside infrastructure and vehicles (I2V), for which the throughput is assessed.

Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes

GaN films were grown on c-plane sapphire by plasma-assisted molecular beam epitaxy (PAMBE). The effect of N/Ga flux ratio on structural, morphological, and optical properties was studied. The dislocation density found to increase with increasing the N/Ga ratio. The surface morphology of the films as seen by scanning electron microscopy shows pits on the surface and found that the pit density on the surface increases with N/Ga ratio. The room temperature photoluminescence study reveals the shift in band-edge emission toward the lower energy with increase in N/Ga ratio. This is believed to arise from the reduction in compressive stress in the films as is evidenced by room temperature Raman study. The transport studied on the Pt/GaN Schottky diodes showed a significant increase in leakage current with an increase in N/Ga ratio and was found to be caused by the increase in pit density as well as increase in dislocation density in the GaN films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3634116]

Temperature dependence of the energy gap and free carrier absorption in bulk InAs0.05Sb0.95 single crystals

Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.95 single crystal was studied between 90 K and 430 K through the absorption spectra. At this alloy concentration, the room-temperature energy gap was measured to be 0.15 eV. Varshni- and the Bose–Einstein-type fit parameters were obtained from the measured temperature dependence of the energy gap, and the latter gave the zero-temperature gap to be 0.214 eV. It was found that although Weider’s empirical formula for the dependence of the energy gap on temperature and the alloy concentration agrees with the value of the gap at room temperature, it is inaccurate in describing its temperature dependence. From the free carrier absorption measurements, the phonon limited cross section of 7.35×10−16 cm2 at 15 μm was deduced at room temperature.

Analysis of integrated optofluidic lab-on-a-chip fluorescence biosensor based on transmittance of light through a fluidic gap

Sensitivity analysis is an important aspect to be looked into while designing lab-on-a-chip systems. In this paper we will be showing with appropriate design that the best sensitivity of the fluorescence biosensor is achieved for an optimal width of fluidic gap, corresponding to a particular mode spot size. We will be also showing that the sensitivity of the biosensor is affected by efficiency of light coupling, which is influenced by changes in the width of fluidic gap, refractive index of the fluid and higher order modes.

Effect of surface on the conductance characteristics of Au‐Bi2Sr2CaCu2O8+δ (single crystal) point contact junctions

We report the effect of surface treatments on the dynamic conductance curves (G=dI/dV‐V) of Au‐Bi2Sr2CaCu2O8+δ (single crystal) point contact junctions of variable junction conductances (100 mS≳G≳100 μS). We find that if the crystal surface is cleaved freshly just prior to making contacts, all irreproducible sharp multiple features often observed in tunneling data of Bi(2212) oxide superconductors disappear. If the cleaved crystal surfaces are left under ambient conditions for a few days and the tunneling experiments are repeated, these multiple features reappear. We also find that if the current in the junction is made to pass predominantly through the bulk (and not along the surface), gap features are sharper. The observed conductance curves are fitted to a modified model [G. E. Blonder et al., Phys. Rev. B 25, 4515 (1982)] and estimated gap values are Δ≂28 to 30 meV corresponding to the ratio 2Δ/kBTc ≂ 7.5 with lifetime broadening Γ/Δ≂0.2. We conclude that the sharp multiple features observed in Bi(2212) tunneling curves has no intrinsic origin in the bulk and they arise from the surface only.

Low Voltage Firing Characteristics of a Simple Triggered Vacuum Gap

The firing characteristics of the simple triggered vacuum gap (TVG) using lead zirconate titanate as dielectric material in the triggered gap are described. This TVG has a long life of about 2000 firings without appreciable deterioration of the electrical properties for main discharge currents upto 3 kA and is much superior to these made with Supramica (Mycalex Corporation of America) and silicon carbide as used in our earlier investigations. The effects of the variation of trigger voltage, trigger curcit, trigger pulse duration, trigger pulse energy, main gap voltage, main gap separation and main circuit energy on the firing characteristics have been studied. Trigger resistance progressively decreases with the number of firings of the trigger gap and as well as of the main gap. This decrease in the trigger resistance is more pronounced for main discharge currents exceeding 10 kA. The minimum trigger current required for reliable firing decreases with increase of trigger voltage upto a threshold value of 1.2 kV and there-onwards saturates at 3.0 A. This value is less than that obtained with Supramica as dielectric material. One hundred percent firing probability of the TVG at main gap voltages as low as 50 V is possible and this low voltage breakdown of the main gap appears to be similar to the breakdown at low pressures between moving plasma by other workers. and the cold electrodes immersed in it, as reported.

Time delay to firing of a triggered vacuum gap with barium titanate in trigger gap

The time delay to the firing of a triggered vacuum gap (t.v.g.) containing barium titanate in the trigger gap is investigated as a function of the main gap voltage, main gap length, trigger pulse duration, trigger current and trigger voltage. The time delay decreases steadily with increasing trigger current and trigger voltage until it reaches saturation. The effect of varying the main gap length and voltage on the time delay is not strong. Before `conditioning�¿ the t.v.g. two groups of time delays, long (>100�¿s) and short (<10�¿s), are simultaneously observed when a large number of trials are conducted. After conditioning, only the group of short time delays are present. This is attributed to the marked reduction of the resistance of the trigger gap across the surface of the solid dielectric resulting directly from the conditioning effect.

C:N ratio of Sediments in a sewage fed Urban Lake

C:N ratio of lake sediments provide valuable information about the source and proportions of terrestrial, phytogenic and phycogenic carbon and nitrogen. This study has been carried out in Varthur lake which is receiving sewage since many decades apart from large scale land cover changes. C:N profile of the surficial sediment layer collected in the rainy and the dry seasons revealed higher C:N values[43] due to the accumulation of autochthonous organic material mostly at the deeper portions of the lake. This also highlights N limitation in the sludge either due to uptake by micro and macro-biota or rapid volatilization, denitrification and possible leaching in water. Organic Carbon was lower towards the inlets and higher near the deeper zones. This pattern of Organic C deposition was aided by gusty winds and high flow conditions together with impacts by the land use land cover changes in the watershed. Spatial variability of C:N in surficial sediments is significant compared to its seasonal variability. This communication provides an insight to the pattern in which nutrients are distributed in the sludge/sediment and its variation across seasons and space impacted by the biotic process accompanied by the hydrodynamic changes in the lake.

Observation of pseudo-gap and Kondo behaviour in Al70Pd30−xMnx quasicrystals

We report here the electrical and magnetic properties of Al70Pd30−xMnx quasicrystals (x=9 and 11), from resistivity and point contact spectroscopy measurements. Electrical resistivity shows a resistivity maximum for both of these compositions. The positive TCR at lower temperature is attributed to spin–orbit scattering. For x=11, we observe an upturn in the resistivity below 20 K, which follows a lnT dependence indicating Kondo-like behaviour. In the point contact spectroscopy studies we observe two regimes showing a V2 dependence at low bias voltages (for V<10 meV) crossing over to the V0.5 dependence at higher voltages. This is attributed to the signature of a pseudo-gap in the density of states at zero bias. We suggest that this V2 dependence can also arise due to magnetic scattering effects, which are signatures of the Kondo-like behaviour.

Gap model of one-way cyclic lateral load on vertical files in soft clay

For the analysis and design of pile foundation used for coastal structures the prediction of cyclic response, which is influenced by the nonlinear behavior, gap (pile soil separation) and degradation (reduction in strength) of soil becomes necessary. To study the effect of the above parameters a nonlinear cyclic load analysis program using finite element method is developed, incorporating the proposed gap and degradation model and adopting an incremental-iterative procedure. The pile is idealized using beam elements and the soil by number of elastoplastic sub-element springs at each node. The effect of gap and degradation on the load-deflection behavior. elasto-plastic sub-element and resistance of the soil at ground-line have been clearly depicted in this paper.

Acenaphtho[1,2-b]quinoxaline based low band gap copolymers for organic thin film transistor applications

We report the synthesis of a novel class of low band gap copolymers based on anacenaphtho[1,2-b]quinoxaline core and oligothiophene derivatives acting as the acceptor and the donor moieties, respectively. The optical properties of the copolymers were characterized by ultraviolet-visible spectroscopy while the electrochemical properties were determined by cyclic voltammetry. The band gap of these polymers was found to be in the range 1.8-2.0 eV as calculated from the optical absorption band edge. X-ray diffraction measurements show weak pi-pi stacking interactions between the polymer chains. The hole mobility of the copolymers was evaluated using field-effect transistor measurements yielding values in the range 10(-5)-10(-3) cm(2)/Vs.

Studies on electrical switching behavior and optical band gap of amorphous Ge-Te-Sn thin films

Amorphous thin film Ge15Te85-xSnx (1 <= x <= 5) and Ge17Te83-xSnx (1 <= x <= 4) switching devices have been deposited in sandwich geometry using a flash evaporation technique, with aluminum as the top and bottom electrodes. Electrical switching studies indicate that these films exhibit memory type electrical switching behavior. The switching fields for both the series of samples have been found to decrease with increase in Sn concentration, which confirms that the metallicity effect on switching fields/voltages, commonly seen in bulk glassy chalcogenides, is valid in amorphous chalcogenide thin films also. In addition, there is no manifestation of rigidity percolation in the composition dependence of switching fields of Ge15Te85-xSnx and Ge17Te83-xSnx amorphous thin film samples. The observed composition dependence of switching fields of amorphous Ge15Te85-xSnx and Ge17Te83-xSnx thin films has been understood on the basis of Chemically Ordered Network model. The optical band gap for these samples, calculated from the absorption spectra, has been found to exhibit a decreasing trend with increasing Sn concentration, which is consistent with the composition dependence of switching fields.

Cyclopentac]thiophene oligomers based solution processable D-A copolymers and their application as FET materials

Two new solution processable, low band gap donor-acceptor (D-A) copolymers (P1 and P2) comprising a cyclopentac] thiophene (CPT) based oligomers as donors and benzoc]1,2,5] selenadiazole (BDS) and 2-dodecyl1,2,3]-benzotriazole (BTAz) as acceptors were synthesized and characterized and their field effect transistor properties were studied. The internal charge transfer interaction between the electron-donating CPT based oligothiophene and the electron-accepting BDS or BTAz unit effectively reduces the band gap in polymers to 1.3 and 1.66 eV with low lying highest occupied molecular orbital (HOMO). The absorption spectrum of P1 was found to be more red shifted than that of P2 because of incorporation of the more electron-withdrawing BDS unit. The color of neutral P1 was found to be green in both solution and film states with two major bands in the absorption spectra; however, neutral P2 revealed one dominant absorption exhibiting red color in both solution and film state which could be attributed to the less electron-withdrawing effect of the BTAz unit. The polymers were further characterized by GPC, TGA, DSC and cyclic voltammetry. P1 and P2 exhibited charge carrier mobilities as high as 9 x 10(-3) cm(2) V-1 s(-1) and 2.56 x 10(-3) cm 2 V-1 s(-1), respectively with the current on/off ratio (I-on/I-off) in the order of 10(2).