Electroluminescence from modulation-doped pseudomorphic AlGaAs/InGaAs/GaAs quantum wells

Low-temperature electroluminescence (EL) is observed in n-type modulation-doped AlGaAs/InGaAs/GaAs quantum well samples by applying a positive voltage between the semitransparent Au gate and alloyed Au–Ge Ohmic contacts made on the top surface of the samples. We attribute impact ionization in the InGaAs QW to the observed EL from the samples. A redshift in the EL spectra is observed with increasing gate bias. The observed redshift in the EL spectra is attributed to the band gap renormalization due to many-body effects and quantum-confined Stark effect.

The Parallel Complexity Of Propagation In Boolean Circuits

We consider the problem of deciding whether the output of a boolean circuit is determined by a partial assignment to its inputs. This problem is easily shown to be hard, i.e., co-Image Image -complete. However, many of the consequences of a partial input assignment may be determined in linear time, by iterating the following step: if we know the values of some inputs to a gate, we can deduce the values of some outputs of that gate. This process of iteratively deducing some of the consequences of a partial assignment is called propagation. This paper explores the parallel complexity of propagation, i.e., the complexity of determining whether the output of a given boolean circuit is determined by propagating a given partial input assignment. We give a complete classification of the problem into those cases that are Image -complete and those that are unlikely to be Image complete.

Programming an FPGA to Emulate the Dynamics of DC Machines

This paper presents the programming an FPGA (Field Programmable Gate Array) to emulate the dynamics of DC machines. FPGA allows high speed real time simulation with high precision. The described design includes block diagram representation of DC machine, which contain all arithmetic and logical operations. The real time simulation of the machine in FPGA is controlled by user interfaces they are Keypad interface, LCD display on-line and digital to analog converter. This approach provides emulation of electrical machine by changing the parameters. Separately Exited DC machine implemented and experimental results are presented.

FPGA based digital platform for the control of AC drives

This paper presents the new trend of FPGA (Field programmable Gate Array) based digital platform for the control of power electronic systems. There is a rising interest in using digital controllers in power electronic applications as they provide many advantages over their analog counterparts. A board comprising of Cyclone device EP1C12Q240C8 of Altera is used for developing this platform. The details of this board are presented. This developed platform can be used for the controller applications such as UPS, Induction Motor drives and front end converters. A real time simulation of a system can also be done. An open-loop induction motor drive has been implemented using this board and experimental results are presented.

Concept of "Crossover Point" and its Application on Threshold Voltage Definition for Undoped-Body Transistors

As the conventional MOSFET's scaling is approaching the limit imposed by short channel effects, Double Gate (DG) MOS transistors are appearing as the most feasible candidate in terms of technology in sub-45nm technology nodes. As the short channel effect in DG transistor is controlled by the device geometry, undoped or lightly doped body is used to sustain the channel. There exits a disparity in threshold voltage calculation criteria of undoped-body symmetric double gate transistors which uses two definitions, one is potential based and the another is charge based definition. In this paper, a novel concept of "crossover point'' is introduced, which proves that the charge-based definition is more accurate than the potential based definition.The change in threshold voltage with body thickness variation for a fixed channel length is anomalous as predicted by potential based definition while it is monotonous for charge based definition.The threshold voltage is then extracted from drain currant versus gate voltage characteristics using linear extrapolation and "Third Derivative of Drain-Source Current'' method or simply "TD'' method. The trend of threshold voltage variation is found same in both the cases which support charge-based definition.

Analysis Of The Energy Quantization Effects On Single Electron Inverter Performance Through Noise Margin Modeling

Possible integration of Single Electron Transistor (SET) with CMOS technology is making the study of semiconductor SET more important than the metallic SET and consequently, the study of energy quantization effects on semiconductor SET devices and circuits is gaining significance. In this paper, for the first time, the effects of energy quantization on SET inverter performance are examined through analytical modeling and Monte Carlo simulations. It is observed that the primary effect of energy quantization is to change the Coulomb Blockade region and drain current of SET devices and as a result affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. It is shown that SET inverter designed with CT : CG = 1/3 (where CT and CG are tunnel junction and gate capacitances respectively) offers maximum robustness against energy quantization.

Concept of Crossover point and its application on Threshold Voltage definition for Undoped-Body Transistors

As the conventional MOSFETs scaling is approaching the limit imposed by short channel effects, Double Gate (DG) MOS transistors are appearing as the most feasible andidate in terms of technology in sub-45nm technology nodes. As the short channel effect in DG transistor is controlled by the device geometry, undoped or lightly doped body, is used to sustain the channel. There exits a disparity in threshold voltage calculation criteria of undoped-body symmetric double gate transistors which uses two definitions, one is potential based and the another is charge based definition. In this paper, a novel concept of "crossover point" is introduced, which proves that the charge-based definition is more accurate than the potential based definition. The change in threshold voltage with body thickness variation for a fixed channel length is anomalous as predicted by, potential based definition while it is monotonous for change based definition. The threshold voltage is then extracted from drain currant versus gate voltage characteristics using linear extrapolation and "Third Derivative of Drain-Source Current" method or simply "TD" method. The trend of threshold voltage variation is found some in both the cases which support charge-based definition.

Load-Commutated SCR Current-Source-Inverter-Fed Induction Motor Drive With Sinusoidal Motor Voltage and Current

Current source inverter (CSI) is an attractive solution in high-power drives. The conventional gate turn-off thyristor (GTO) based CSI-fed induction motor drives suffer from drawbacks such as low-frequency torque pulsation, harmonic heating, and unstable operation at low-speed ranges. These drawbacks can be overcome by connecting a current-controlled voltage source inverter (VSI) across the motor terminal replacing the bulky ac capacitors. The VSI provides the harmonic currents, which results in sinusoidal motor voltage and current even with the CSI switching at fundamental frequency. This paper proposes a CSI-fed induction motor drive scheme where GTOs are replaced by thyristors in the CSI without any external circuit to assist the turning off of the thyristors. Here, the current-controlled VSI, connected in shunt, is designed to supply the volt ampere reactive requirement of the induction motor, and the CSI is made to operate in leading power factor mode such that the thyristors in the CSI are autosequentially turned off. The resulting drive will be able to feed medium-voltage, high-power induction motors directly. A sensorless vector-controlled CSI drive based on the proposed configuration is developed. The experimental results from a 5 hp prototype are presented. Experimental results show that the proposed drive has stable operation throughout the operating range of speeds.

Justifying threshold voltage definition for undoped body transistors through ``crossover point'' concept

Two different definitions, one is potential based and the other is charge based, are used in the literatures to define the threshold voltage of undoped body symmetric double gate transistors. This paper, by introducing a novel concept of crossover point, proves that the charge based definition is more accurate than the potential based definition. It is shown that for a given channel length the potential based definition predicts anomalous change in threshold voltage with body thickness variation while the charge based definition results in monotonous change. The threshold voltage is then extracted from drain current versus gate voltage characteristics using linear extrapolation, transconductance and match-point methods. In all the three cases it is found that trend of threshold voltage variation support the charge based definition.

Studies on the Tracking and Erosion Resistance of RTV Silicone Rubber Nanocomposite

One of the problems associated with outdoor polymeric insulators is tracking and erosion of the weathershed which can directly influence the reliability of the power system. Flame retardants are added to the base material to enhance its tracking and erosion resistance. Hydroxide fillers are regarded as the best flame retardants. This paper deals with studies related to nano - sized magnesium dihydroxide (MDH) and micron-sized Alumina Trihydrate (ATH) fillers as flame retardants in RTV silicone rubber. Tracking and erosion resistance studies were carried out on MDH and ATH silicone rubber composites using an inclined plane tracking and erosion (IPT) resistance tester. The MDH filled (5% by wt) composites performed much better than ATH composites in terms of eroded mass, depth of erosion, width and length of erosion. The eroded mass of MDH composite is 49.8 % that of ATH composite which can be attributed to high surface area and higher thermal stability of MDH nanofillers.

An investigation of structural, magnetic and dielectric properties of R2NiMnO6 (R = rare earth, Y)

We have investigated the structure, magnetic and dielectric properties of the double perovskite oxides, R2NiMnO6 (R = Pr, Nd, Sm, Gd, Tb, Dy, Ho and Y). We could refine powder X-ray diffraction patterns of all the phases on the basis of monoclinic (P2(1)/n) double perovskite structure where Ni and Mn atoms are ordered at 2c and 2d sites, respectively. All the phases are ferromagnetic insulators exhibiting relatively low dielectric loss and dielectric constants in the range 15-25. The ferromagnetic ordering temperature of the R2NiMnO6 series seems to correlate better with the radius of R3+ atoms than with the average Ni-O-Mn angle (phi) in the double perovskite structure. These results are consistent with all samples having Mn4+ and Ni2+ With minimal antisite disorder.

A Unique Filter-Preserver Device for Digital Photonic Circuits

We discuss micro ring resonator based optical logic gates using Kerr-type nonlinearity. Resonant wavelength selectivity is one key factor in achieving the desired gate. Based on basic gates like AND gate, OR gate etc. We proceed to propose a 3-bit binary adder circuit.Due to the presence of more than a single wavelength, the system gets complicated as we increase the number of components in the circuit. Hence it has been observed that for efficient designing and functioning of digital circuits in optical domain, we need a device which can give single wavelength output, filtering out all other wavelengths and at the same time preserve the digital characteristics of the output. We propose such filter-preserver device based on micro ring resonator.

Ways and Means for Disposal of Surplus Water in Storage Reservoirs and other Irrigation and Flood Protective Works

In the paper new way of classifying spillways have been suggested. The various types, merits and demerits or existing spillway devices have been discussed. The considerations governing the choice of a design of a spillway have been mention. A criteria for working out the economics of spillway design has been suggested. An efficient surplus sing device has next been described and compared with other devices. In conclusion it has been suggested that the most efficient and at the same time economical arrangement will be a combination of devices. In conclusion it has been suggested will be a combination of crest gate, volute siphons and high head gates. The appendix gives a list of devices used in dams in various parts of the world.

Nonlinear I-V characteristics of senmiconducting paints

The oxide-based high resistivity semiconducting Paints can be used on high voltage insulators for improved performance. They were found to exhibit nonlinear I-V characteristics which are reported here. The paints exhibited power law relationship and a sharp transition in merhanism of conduction at a critical voltage.

Nonlinear transport in semiconducting polymers at high carrier densities

Conducting and semiconducting polymers are important materials in the development of printed, flexible, large-area electronics such as flat-panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high-performance field-effect transistors (FETs), beginning(1) with mobilities around 10(-4) cm(2) V-1 s(-1) to a recent report(2) of 1 cm(2) V-1 s(-1) for poly(2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b] thiophene) (PBTTT). Here, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source-drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger liquid description of the one-dimensional `metal'.