213 resultados para Density Topology


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This paper presents a general methodology for the synthesis of the external boundary of the workspaces of a planar manipulator with arbitrary topology. Both the desired workspace and the manipulator workspaces are identified by their boundaries and are treated as simple closed polygons. The paper introduces the concept of best match configuration and shows that the corresponding transformation can be obtained by using the concept of shape normalization available in image processing literature. Introduction of the concept of shape in workspace synthesis allows highly accurate synthesis with fewer numbers of design variables. This paper uses a new global property based vector representation for the shape of the workspaces which is computationally efficient because six out of the seven elements of this vector are obtained as a by-product of the shape normalization procedure. The synthesis of workspaces is formulated as an optimization problem where the distance between the shape vector of the desired workspace and that of the workspace of the manipulator at hand are minimized by changing the dimensional parameters of the manipulator. In view of the irregular nature of the error manifold, the statistical optimization procedure of simulated annealing has been used. A number of worked-out examples illustrate the generality and efficiency of the present method. (C) 1998 Elsevier Science Ltd. All rights reserved.

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We discuss a recently formulated microscopic theory of the unusual coexistence of spin density waves (SDWs) and charge density waves (CDWs) that has been seen in recent experiments on (TMTTF)2Br, (TMTSF)2PF6 and α-(BEDT-TTF)2MHg(SCN)4.

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Recent experiments indicate that the spin-density waves (SDWs) in (TMTTF)(2)Br, (TMTSF)(2)PF6, and alpha-(BEDT-TTF)(2)MHg(SCN)(4) are highly unconventional and coexist with charge-density waves (CDWs). We present a microscopic theory of this unusual CDW-SDW coexistence. A complete understanding requires the explicit inclusion of strong Coulomb interactions, lattice discreteness, the anisotropic two-dimensional nature of the lattice, and the correct hand filling within the starting Hamiltonian. [S0031-9007(99)08498-7].

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We have carried out symmetrized density-matrix renormalization-group calculations to study the nature of excited states of long polyacene oligomers within a Pariser-Parr-Pople Hamiltonian. We have used the C-2 symmetry, the electron-hole symmetry, and the spin parity of the system in our calculations. We find that there is a crossover in the lowest dipole forbidden two-photon state and the lowest dipole allowed excited state with size of the oligomer. In the long system limit, the two-photon state lies below the lowest dipole allowed excited state. The triplet state lies well below the two-photon state and energetically does not correspond to its description as being made up of two triplets. These results are in agreement with the general trends in linear conjugated polymers. However, unlike in linear polyenes wherein the two-photon state is a localized excitation, we find that in polyacenes, the two-photon excitation is spread out over the system. We have doped the systems with a hole and an electron and have calculated the charge excitation gap. Using the charge gap and the optical gap, we estimate the binding energy of the 1(1)B(-) exciton to be 2.09 eV. We have also studied doubly doped polyacenes and find that the bipolaron in these systems, to be composed of two separated polarons, as indicated by the calculated charge-density profile and charge-charge correlation function. We have studied bond orders in various states in order to get an idea of the excited state geometry of the system. We find that the ground state, the triplet state, the dipole allowed state, and the polaron excitations correspond to lengthening of the rung bonds in the interior of the oligomer while the two-photon excitation corresponds to the rung bond lengths having two maxima in the system.

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Vapour adsorption refrigeration systems (VAdS) have the advantage of scalability over a wide range of capacities ranging from a few watts to several kilowatts. In the first instance, the design of a system requires the characteristics of the adsorbate-adsorbent pair. Invariably, the void volume in the adsorbent reduces the throughput of the thermal compressor in a manner similar to the clearance volume in a reciprocating compressor. This paper presents a study of the activated carbon +HFC-134a (1,1,1,2-tetrafluoroethane) system as a possible pair for a typical refrigeration application. The aim of this study is to unfold the nexus between the adsorption parameters, achievable packing densities of charcoal and throughput of a thermal compressor. It is shown that for a thermal compressor, the adsorbent should not only have a high surface area, but should also be able to provide a high packing density. Given the adsorption characteristics of an adsorbent-adsorbate pair and the operating conditions, this paper discloses a method for the calculation of the minimum packing density necessary for an effective throughput of a thermal compressor. (C) 2002 Elsevier Science Ltd. All rights reserved.

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We have studied the power spectral density [S(f) = gamma/f(alpha)] of universal conductance fluctuations (UCF's) in heavily doped single crystals of Si, when the scatterers themselves act as the primary source of dephasing. We observed that the scatterers, with internal dynamics like two-level-systems, produce a significant, temperature-dependent reduction in the spectral slope alpha when T less than or similar to 10 K, as compared to the bare 1/f (alphaapproximate to1) spectrum at higher temperatures. It is further shown that an upper cutoff frequency (f(m)) in the UCF spectrum is necessary in order to restrict the magnitude of conductance fluctuations, [(deltaG(phi))(2)], per phase coherent region (L-phi(3)) to [(deltaGphi)(2)](1/2) less than or similar to e(2)/h. We find that f(m) approximate to tau(D)(-1), where tau(D) = L-2/D, is the time scale of the diffusive motion of the electron along the active length (L) of the sample (D is the electron diffusivity).

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Temperature- and density-dependent vibrational relaxation data for the v6 asymmetric stretch of W(CO)6 in supercritical fluoroform (trifluoromethane, CHF3) are presented and compared to a recent theory of solute vibrational relaxation. The theory, which uses thermodynamic and hydrodynamic conditions of the solvent as input parameters, shows very good agreement in reproducing the temperature- and density-dependent trends of the experimental data with a minimum of adjustable parameters. Once a small number of parameters are fixed by fitting the functional form of the density dependence, there are no adjustable parameters in the calculations of the temperature dependence. © 2001 American Institute of Physics.

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We study the nature of excited states of long polyacene oligomers within a Pariser-Parr-Pople (PPP) Hamiltonian using the Symmetrized Density Matrix Renormalization Group (SDMRG) technique. We find a crossover between the two-photon state and the lowest dipole allowed excited state as the system size is increased from tetracene to pentacene. The spin-gap is the smallest gap. We also study the equilibrium geome tries in the ground and excited states from bond orders and bond-bond correlation functions. We find that the Peierls instability in the ground state of polyacene is conditional both from energetics and structure factors computed froth correlation functions.

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Current-voltage (I-V) and impedance measurements were carried out in doped poly(3-methylthiophene) devices by varying the carrier density. As the carrier concentration reduces the I-V characteristics indicate that the conduction mechanism is limited by metal-polymer interface, as also observed in impedance data. The temperature dependence of I-V in moderately doped samples shows a trap-controlled space-charge-limited conduction (SCLC); whereas in lightly doped devices injection-limited conduction is observed at lower bias and SCLC at higher voltages. The carrier density-dependent quasi-Fermi level adjustment and trap-limited transport could explain this variation in conduction mechanism. Capacitance measurements at lower frequencies and higher bias voltages show a sign change in values due to the significant variations in the relaxation behaviour for lightly and moderately doped samples. The electrical hysteresis increases as carrier density is reduced due to the time scales involved in the de-trapping of carriers.

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A new configuration is proposed for high-power induction motor drives. The induction machine is provided with two three-phase stator windings with their axes in line. One winding is designed for higher voltage and is meant to handle the main (active) power. The second winding is designed for lower voltage and is meant to carry the excitation (reactive) power. The excitation winding is powered by an insulated-gate-bipolar-transistor-based voltage source inverter with an output filter. The power winding is fed by a load-commutated current source inverter. The commutation of thyristors in the load-commutated inverter (LCI) is achieved by injecting the required leading reactive power from the excitation inverter. The MMF harmonics due to the LCI current are also cancelled out by injecting a suitable compensating component from the excitation inverter, so that the electromagnetic torque of the machine is smooth. Results from a prototype drive are presented to demonstrate the concept.

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A multilevel inverter topology for seven-level space vector generation is proposed in this paper. In this topology, the seven-level structure is realized using two conventional two-level inverters and six capacitor-fed H-bridge cells. It needs only two isolated dc-voltage sources of voltage rating V(dc)/2 where V(dc) is the dc voltage magnitude required by the conventional neutral point clamped (NPC) seven-level topology. The proposed topology is capable of maintaining the H-bridge capacitor voltages at the required level of V(dc)/6 under all operating conditions, covering the entire linear modulation and overmodulation regions, by making use of the switching state redundancies. In the event of any switch failure in H-bridges, this inverter can operate in three-level mode, a feature that enhances the reliability of the drive system. The two-level inverters, which operate at a higher voltage level of V(dc)/2, switch less compared to the H-bridges, which operate at a lower voltage level of V(dc)/6, resulting in switching loss reduction. The experimental verification of the proposed topology is carried out for the entire modulation range, under steady state as well as transient conditions.

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The focus of this paper is on designing useful compliant micro-mechanisms of high-aspect-ratio which can be microfabricated by the cost-effective wet etching of (110) orientation silicon (Si) wafers. Wet etching of (110) Si imposes constraints on the geometry of the realized mechanisms because it allows only etch-through in the form of slots parallel to the wafer's flat with a certain minimum length. In this paper, we incorporate this constraint in the topology optimization and obtain compliant designs that meet the specifications on the desired motion for given input forces. Using this design technique and wet etching, we show that we can realize high-aspect-ratio compliant micro-mechanisms. For a (110) Si wafer of 250 µm thickness, the minimum length of the etch opening to get a slot is found to be 866 µm. The minimum achievable width of the slot is limited by the resolution of the lithography process and this can be a very small value. This is studied by conducting trials with different mask layouts on a (110) Si wafer. These constraints are taken care of by using a suitable design parameterization rather than by imposing the constraints explicitly. Topology optimization, as is well known, gives designs using only the essential design specifications. In this work, we show that our technique also gives manufacturable mechanism designs along with lithography mask layouts. Some designs obtained are transferred to lithography masks and mechanisms are fabricated on (110) Si wafers.

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Scalable Networks on Chips (NoCs) are needed to match the ever-increasing communication demands of large-scale Multi-Processor Systems-on-chip (MPSoCs) for multi media communication applications. The heterogeneous nature of application specific on-chip cores along with the specific communication requirements among the cores calls for the design of application-specific NoCs for improved performance in terms of communication energy, latency, and throughput. In this work, we propose a methodology for the design of customized irregular networks-on-chip. The proposed method exploits a priori knowledge of the applications communication characteristic to generate an optimized network topology and corresponding routing tables.

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A methodology termed the “filtered density function” (FDF) is developed and implemented for large eddy simulation (LES) of chemically reacting turbulent flows. In this methodology, the effects of the unresolved scalar fluctuations are taken into account by considering the probability density function (PDF) of subgrid scale (SGS) scalar quantities. A transport equation is derived for the FDF in which the effect of chemical reactions appears in a closed form. The influences of scalar mixing and convection within the subgrid are modeled. The FDF transport equation is solved numerically via a Lagrangian Monte Carlo scheme in which the solutions of the equivalent stochastic differential equations (SDEs) are obtained. These solutions preserve the Itô-Gikhman nature of the SDEs. The consistency of the FDF approach, the convergence of its Monte Carlo solution and the performance of the closures employed in the FDF transport equation are assessed by comparisons with results obtained by direct numerical simulation (DNS) and by conventional LES procedures in which the first two SGS scalar moments are obtained by a finite difference method (LES-FD). These comparative assessments are conducted by implementations of all three schemes (FDF, DNS and LES-FD) in a temporally developing mixing layer and a spatially developing planar jet under both non-reacting and reacting conditions. In non-reacting flows, the Monte Carlo solution of the FDF yields results similar to those via LES-FD. The advantage of the FDF is demonstrated by its use in reacting flows. In the absence of a closure for the SGS scalar fluctuations, the LES-FD results are significantly different from those based on DNS. The FDF results show a much closer agreement with filtered DNS results. © 1998 American Institute of Physics.