Effect of magnetic field on the binding energy of a hydrogenic donor in a vertical bar z vertical bar(2/3) quantum well

We have calculated the binding energy of a hydrogenic donor in a quantum well with potential shape proportional to \z\(2/3) as a function of the width of the quantum well and the barrier height under an applied uniform magnetic field along the a axis. As the well width decreases, the binding energy increases initially up to a critical well width (which is nearly the same for all magnetic fields) at which there is a turnover. The results are qualitatively similar to those of a hydrogenic donor in a rectangular well. We have also calculated [rho(2)](1/2) and [z(2)](1/2) for the donor electron. [rho(2)](1/2) is found to be strongly dependent on the magnetic field for a given well width and weakly dependent on the well width and the barrier height, for a given value of magnetic field [z(2)](1/2) is weakly dependent on the applied magnetic field. The probability of finding the donor electron inside the well shows a rapid decrease as the well width is reduced at nearly the well width at which the binding energy shows a maximum.

Synchrotron Study of the Dynamical Effects in the LVV Auger Transitions in the First-Row Transition Elements

The intensity ratio between L2-M45M45 and L3-M45M45 spectral features for both Fe and Co indicates significant tranfer of intensity from L2- to L3-M45M45 region due to Coster-Kronig L2-M45M45 transition. The L2-L3M45 transition can be suppressed by turning the photon energy between the L2 and L3 thresholds; however, the L3-M45M45 spectral shapes for Fe and Co do not change very significantly even at these photom energies unlike the cases of Ni, Cu and Zn, thus establishing that the M45-hole decays predominantly before the L3-hole Auger decay in the early transition elements in contrast to the late ones.

Structural and optical properties of nonpolar (11-20) a-plane GaN grown on (1-102) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy

We report the structural and optical properties of a-plane GaN film grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction was used to determine the out-of-plane and in-plane epitaxial relation of a-plane GaN to r-plane sapphire. Low-temperature photoluminescence emission was found to be dominated by basal stacking faults along with near-band emission. Raman spectroscopy shows that the a-GaN film is of reasonably good quality and compressively strained. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Embrittlement of a bulk metallic glass due to low-temperature annealing

Embrittlement of a bulk La-based metallic glass due to isothermal and isochronal annealing below the T-g was investigated. Results show that the impact toughness decreases with increasing annealing time or temperature, accompanied by a change in fracture morphology. Reasons for this are discussed in terms of structural relaxation. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

A dynamical model for the Portevin-le Chatelier bands

We show that an extension of Ananthakrishna's model to include spatial degrees of freedom produces spatially uncorrelated bands, hopping type and the continuously propagating type with increasing applied strain rate. The velocity of the continuously propagating bands is found to vary linearly with applied strain rate. (C) 2003 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Multiple beam interference of light in an absorbing wedge

Multiple beam interference of light in a wedge is considered when the wedge is filled with an absorbing medium. The aim is to examine a method that may give values of both the real and the imaginary parts of the refractive index of the absorbing medium. We propose here a method to determine these quantities from simple techniques like fringe counting and interferometry, by using as the incident wave either a single Gaussian beam or two parallel Gaussian beams.