76 resultados para spin Hall effect


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Spin valves have revolutionized the field of magnetic recording and memory devices. Spin valves are generally realized in thin film heterostructures, where two ferromagnetic (FM) layers are separated by a nonmagnetic conducting layer. Here, we demonstrate spin-valve-like magnetoresistance at room temperature in a bulk ferrimagnetic material that exhibits a magnetic shape memory effect. The origin of this unexpected behavior in Mn2NiGa has been investigated by neutron diffraction, magnetization, and ab initio theoretical calculations. The refinement of the neutron diffraction pattern shows the presence of antisite disorder where about 13% of the Ga sites are occupied by Mn atoms. On the basis of the magnetic structure obtained from neutron diffraction and theoretical calculations, we establish that these antisite defects cause the formation of FM nanoclusters with parallel alignment of Mn spin moments in a Mn2NiGa bulk lattice that has antiparallel Mn spin moments. The direction of the Mn moments in the soft FM cluster reverses with the external magnetic field. This causes a rotation or tilt in the antiparallel Mn moments at the cluster-lattice interface resulting in the observed asymmetry in magnetoresistance.

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Optically generated spin polarized electrons in bulk n-type Ge samples have been detected by using a radio-frequency modulation technique. Using the Hanle effect in an external magnetic field, the spin lifetime was measured as a function of temperature in the range 90 K to 180 K. The lifetime decreases with increasing temperature from similar to 5 ns at 100 K to similar to 2 ns at 180 K. We show that the temperature dependence is consistent with the Elliott-Yafet spin relaxation mechanism R. J. Elliot, Phys. Rev. 96, 266 (1954)]. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4772500]

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We extend our analysis of transverse single spin asymmetry in electroproduction of J/psi to include the effect of the scale evolution of the transverse momentum dependent (TMD) parton distribution functions and gluon Sivers function. We estimate single spin asymmetry for JLab, HERMES, COMPASS, and eRHIC energies using the color evaporation model of charmonium production, using an analytically obtained approximate solution of TMD evolution equations discussed in the literature. We find that there is a reduction in the asymmetry compared with our predictions for the earlier case considered by us, wherein the Q(2) dependence came only from DGLAP evolution of the unpolarized gluon densities and a different parametrization of the TMD Sivers function was used.

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We extend our analysis of transverse single spin asymmetry in electroproduction of J/ψ to include the effect of the scale evolution of the transverse momentum dependent (TMD) parton distribution functions and gluon Sivers function. We estimate single spin asymmetry for JLab, HERMES, COMPASS, and eRHIC energies using the color evaporation model of charmonium production, using an analytically obtained approximate solution of TMD evolution equations discussed in the literature. We find that there is a reduction in the asymmetry compared with our predictions for the earlier case considered by us, wherein the Q2 dependence came only from DGLAP evolution of the unpolarized gluon densities and a different parametrization of the TMD Sivers function was used.

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Schottky barrier devices of metal/semiconductor/metal structure were fabricated using organic semiconductor polyaniline (PANI) and aluminium thin film cathode. Aluminium contacts were made by thermal evaporation technique using two different forms of metals (bulk and nanopowder). The structure and surface morphology of these films were investigated by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. Grain size of the as-deposited films obtained by Scherrer's method, modified Williamson-Hall method, and SEM were found to be different. Current-voltage (I-V) characteristic of Schottky barrier device structure indicates that the calculated current density (J) for device fabricated from aluminium nanopowder is more than that from aluminium in bulk form.

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The mixed alkali metal effect is a long-standing problem in glasses. Electron paramagnetic resonance (EPR) is used by several researchers to study the mixed alkali metal effect, but a detailed analysis of the nearest neighbor environment of the glass former using spin-Hamiltonian parameters was elusive. In this study we have prepared a series of vanadate glasses having general formula (mol %) 40 V2O5-30BaF(2)-(30 - x)LiF-xRbF with x = 5, 10, 15, 20, 25, and 30. Spin-Hamiltonian parameters of V4+ ions were extracted by simulating and fitting to the experimental spectra using EasySpin. From the analysis of these parameters it is observed that the replacement of lithium ions by rubidium ions follows a ``preferential substitution model''. Using this proposed model, we were able to account for the observed variation in the ratio of the g parameter, which goes through a maximum. This reflects an asymmetric to symmetric changeover of. the alkali metal ion environment around the vanadium site. Further, this model also accounts for the variation in oxidation state of vanadium ion, which was confirmed from the variation in signal intensity of EPR spectra.

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Quinary chalcogenide compounds Cu2.1Zn0.9Sn1-xInxSe4 (0 <= x <= 0.1) were prepared by melting (1170K) followed by annealing (773 K) for 172 h. Powder X-ray diffraction (XRD) data accompanied by electron probe microanalysis (EPMA) and Raman spectra of all the samples confirmed the formation of a tetragonal kesterite structure with Cu2FeSnS4-type. The thermoelectric properties of all the samples were measured as a function of temperature in the range of 300-780K. The electrical resistivity of all the samples exhibits metallic-like behavior. The positive values of the Seebeck coefficient and the Hall coefficient reveal that holes are the majority charge carriers. The codoping of copper and indium leads to a significant increase of the electrical resistivity and the Seebeck coefficient as a function of temperature above 650 K. The thermal conductivity of all the samples decreases with increasing temperature. Lattice thermal conductivity is not significantly modified as the doping content may infer negligible mass fluctuation scattering for copper/zinc and indium/tin substitution. Even though, the power factors (S-2/rho) of indium-doped samples Cu2.1Zn0.9Sn1-xInxSe4 (x = 0.05, 0.075) are almost the same, the maximum zT = 0.45 at 773K was obtained for Cu2.1Zn0.9Sn0.925In0.075Se4 due to its smaller value of thermal conductivity. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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We present a comparative study of the temperature dependent magnetic properties and electron paramagnetic resonance parameters of nano and bulk samples of Bi0.2Sr0.8MnO3 (BSMO). Bulk BSMO is known to have a high T-N similar to 260K and robust charge ordering (T-CO similar to 360 K). We confirm that the bulk sample shows an antiferromagnetic transition around similar to 260K and a spin-glass transition similar to 40 K. For the nano sample, we see a clear ferromagnetic transition at around similar to 120 K. We conclude that spin glass state, which is present due to the co-existence of antiferromagnetic and ferromagnetic states in the bulk sample, is suppressed in the nano sample and ferromagnetism is induced instead. (C) 2014 AIP Publishing LLC.

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Nanocrystalline strontium hexaferrites SrFe12-2x (Ni2+-Zr4+)(x)O-19] nanoparticles were successfully synthesized by sal gel process. For densification the powders were sintered at 950 degrees C/4 h. The sintered samples were characterized by X-ray diffraction (XRD), surface area measurement, and field emission scanning electron microscope (FESEM). The lattice parameter a is almost constant but c increased with x upto 0.8 and then decreased. The frequency dependent complex permittivity (epsilon and epsilon `' and permeability (mu' and mu `') and magnetic properties such as saturation magnetization (M-s), coercive field (H-c) were studied. If is observed that saturation magnetization increased gradually from 57.82 emuig to 67.2 emufg as x increased from 0.2 to 0.4 and then decreased from 672 emufg to 31.63 ernufg for x=1.0. In present study, x=0.4 shows high value of M-s 67.2 emu/g. The real part of permittivity (epsilon') remains constant upto a frequency 1 GHz and increases further with an increase of frequency, a resonance and anti resonance peak was observed above 1 GHz for all the samples. In real part of permeability (mu') the relaxation frequency is observed above 1 GHz for all the samples and it is attributed to the domain wall motion. It is well known that the permeability for polycrystalline ferrites can be described as the superposition of two different magnetizing mechanisms: spin rotation and domain wall motion. These low coercive strontium hexaferrites are suitable for magnetic recording applications in hard disks, floppy disks, video tapes, etc. (C) 2015 Elsevier B.V. All rights reserved.

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Iron(III)-Schiff base complexes, namely, Fe(tsc-py)(2)](NO3) (1), Fe(tsc-acpy)(2)](NO3) (2) and Fe(tsc-VB6)(2)](NO3) (3), where tsc-py, tsc-acpy and tsc-VB6 are the respective Schiff bases derived from thiosemicarbazide (tsc) and pyridine-2-aldehyde (tsc-py), 2-acetyl pyridine (tsc-acpy) and vitamin B-6 (pyridoxal, tsc-VB6), have been prepared, structurally characterized and their photocytotoxicity studied in cancer HeLa cells. The single crystal X-ray structures of the complexes 1 and 2 show a distorted octahedral geometry formed by the FeN4S2 core. The low-spin and 1 : 1 electrolytic complexes display a broad absorption band in the visible region. Complexes 1 and 2, without any VB6 moiety are not cytotoxic under light or dark conditions. Complex 3 is significantly photocytotoxic under visible light of 400-700 nm giving an IC50 value of 22.5 mu M in HeLa cells with no dark toxicity (IC50 > 100 mu M). The photo-induced cell death is attributable to apoptotic pathways involving photo-assisted generation of intracellular ROS. The observed photocytotoxicity of complex 3 could be the result of its better photosensitizing property combined with its enhanced uptake into cancer cells via a VB6 transporting membrane carrier (VTC) mediated diffusion pathway due to the presence of the VB6 moiety compared to the two non-vitamin B-6 analogues, complexes 1 and 2.

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Unusual behavior of reentrant spin-glass (RSG) compound Lu2MnNiO6 has been investigated by magnetometry and neutron diffraction. The system possesses a ferromagnetic (FM) ordering below 40 K and undergoes a RSG transition at 20 K. Additionally, Lu2MnNiO6 retains memory effect above the glassy transition till spins sustain ordering. A novel critical behavior with unusual critical exponents (beta =similar to 0.241 and gamma similar to 1.142) is observed that indicates a canting in the spin structure below the ferromagnetic transition (T-C). A comprehensive analysis of temperature-dependent neutron diffraction data and first-principles calculations divulge that a structural distortion induced by an octahedral tilting results in a canted spin structure below T-C.

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We investigate the direct correspondence between Co band ferromagnetism and structural parameters in the pnictide oxides RCoPO for different rare-earth ions (R = La, Pr, Nd, Sm) by means of muon-spin spectroscopy and ab initio calculations, complementing our results published previously G. Prando et al., Common effect of chemical and external pressures on the magnetic properties of RCoPO (R = La, Pr), Phys. Rev. B 87, 064401 (2013)]. We find that both the transition temperature to the ferromagnetic phase T-C and the volume of the crystallographic unit cell V are conveniently tuned by the R ionic radius and/or external pressure. We report a linear correlation between T-C and V and our ab initio calculations unambiguously demonstrate a full equivalence of chemical and external pressures. As such, we show that R ions influence the ferromagnetic phase only via the induced structural shrinkage without involving any active role from the electronic f degrees of freedom, which are only giving a sizable magnetic contribution at much lower temperatures.

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Quantum wires with spin-orbit coupling provide a unique opportunity to simultaneously control the coupling strength and the screened Coulomb interactions where new exotic phases of matter can be explored. Here we report on the observation of an exotic spin-orbit density wave in Pb-atomic wires on Si(557) surfaces by mapping out the evolution of the modulated spin-texture at various conditions with spin-and angle-resolved photoelectron spectroscopy. The results are independently quantified by surface transport measurements. The spin polarization, coherence length, spin dephasing rate and the associated quasiparticle gap decrease simultaneously as the screened Coulomb interaction decreases with increasing excess coverage, providing a new mechanism for generating and manipulating a spin-orbit entanglement effect via electronic interaction. Despite clear evidence of spontaneous spin-rotation symmetry breaking and modulation of spin-momentum structure as a function of excess coverage, the average spin polarization over the Brillouin zone vanishes, indicating that time-reversal symmetry is intact as theoretically predicted.

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Nanocrystalline Mn0.4Zn0.6SmxGdyFe2-(x+y)O4 (x = y = 0.01, 0.02, 0.03, 0.04 and 0.05) were synthesized by combustion route. The detailed structural studies were carried out through X-ray diffractometer (XRD), Fourier transform infrared spectroscopy (FTIR), transmission electron microscopy (TEM). The results confirms the formation of mixed spine phase with cubic structure due to the distortion created with co-dopants substitution at Fe site in Mn-Zn ferrite lattice. Further, the crystallite size increases with an increase of Sm3+-Gd3+ ions concentration while lattice parameter and lattice strain decreases. Furthermore, the effect of Sm-Gd co-doping in Mn-Zn ferrite on the room temperature electrical (dielectric studies) studies were carried out in the wide frequency range 1 GHz-5 GHz. The magnetic studies were carried out using vibrating sample magnetometer (VSM) under applied magnetic field of 1.5T and also room temperature electron paramagnetic resonance (EPR) spectra's were recorded. From the results of dielectric studies, it shows that the real and imaginary part of permittivities are increasing with variation of Gd3+ and Sm3+ concentration. The magnetic studies reveal the decrease of remnant, saturation magnetization and coercivity with increasing of Sm3+-Gd3+ ion concentration. The g-value, peak-to-peak line width and spin concentration evaluated from EPR spectra correlated with cations occupancy. The electromagnetic properties clearly indicate that these materials are the good candidates which are useful at L and C band frequency. (C) 2015 Elsevier B.V. All rights reserved.

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We study graphene, which has both spin-orbit coupling (SOC), taken to be of the Kane-Mele form, and a Zeeman field induced due to proximity to a ferromagnetic material. We show that a zigzag interface of graphene having SOC with its pristine counterpart hosts robust chiral edge modes in spite of the gapless nature of the pristine graphene; such modes do not occur for armchair interfaces. Next we study the change in the local density of states (LDOS) due to the presence of an impurity in graphene with SOC and Zeeman field, and demonstrate that the Fourier transform of the LDOS close to the Dirac points can act as a measure of the strength of the spin-orbit coupling; in addition, for a specific distribution of impurity atoms, the LDOS is controlled by a destructive interference effect of graphene electrons which is a direct consequence of their Dirac nature. Finally, we study transport across junctions, which separates spin-orbit coupled graphene with Kane-Mele and Rashba terms from pristine graphene both in the presence and absence of a Zeeman field. We demonstrate that such junctions are generally spin active, namely, they can rotate the spin so that an incident electron that is spin polarized along some direction has a finite probability of being transmitted with the opposite spin. This leads to a finite, electrically controllable, spin current in such graphene junctions. We discuss possible experiments that can probe our theoretical predictions.