65 resultados para screen-based sedentary behaviour


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This paper reports on the effect of multiwall carbon nanotubes (CNTs) without and with chemical functionalization on the mechanical properties of Bisphenol E cyanate ester resin (BECy) based carbon fibre reinforced plastic (CFRP) laminated composites. BECy with its low viscosity, low moisture uptake and superior mechanical properties is selected for its application in CFRP laminates through the cost-effective Vacuum Assisted Resin Transfer Moulding (VARTM) process. However, unlike CNT-epoxy-CFRP composites, processing and performance issues such as dispersion of CNTs, chemical bonding with resin, functionalization effects, effects on mechanical properties, etc. for BECy-CNT-CFRP composite system are not well reported. The objective of this study is to improve the mechanical properties of BECy resin with small additions of CNTs and functionalized CNTs in CFRP laminates. CNTs and fCNTs are infused into BECy using ultrasonication and standard mixing methods. Improvements in Young's modulus and strength in tension, compression, shear, flexure and interlaminar shear strength are analysed. It is observed that addition of 0.5wt% CNTs effected for maximum mechanical properties of the resin and 1wt% CNTs for the mechanical properties of CNT-CFRP nanocomposite. Further, improvements obtained with fCNTs are marginal. Dispersion behaviour and effect of CNTs/fCNTs in load transfer corroborated with SEM pictures are presented. The enhanced mechanical properties realized in VARTM processing of BECy-CFRP laminate indicate clear advantage of CNT based modification of the process.

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This paper presents exploratory and statistical analyses of the activity-travel behaviour of non-workers in Bangalore city in India. The study summarises the socio-demographic characteristics as well as the activity-travel behaviour of non-workers using a primary activity-travel survey data collected by the authors. Where possible, the research also compares the analysis findings with the case studies on activity-travel behaviour of non-workers, carried out in developed and developing countries. This gives an opportunity to understand the differences/similarities in the activity-travel behaviour of non-workers across diverse socio-cultural settings. The preliminary exploratory analysis shed light on the differences in activity participation, trip chaining, time-of-day preference for trip departure, and mode use behaviour of non-workers in Bangalore city. Statistical models were developed for investigating the effects of individual and household socio-demographics, land use parameters, and travel context attributes on activity participation, trip chaining, time-of-day choice, and mode choice decisions of non-workers. A few important results of the analysis are the influence of viewing television at home on out-of-home activity participation and trip-chaining behaviour, and the impact of in-home maintenance activity duration on time-of-day choice. Further, based on the findings of the initial analyses, an attempt has been made in this study to develop an integrated model that links time allocation, time-of-day choice, and trip chaining behaviour of non-workers. The study also discusses the implications of the research findings for transportation planning and policy for Bangalore city. (C) 2015 Elsevier Ltd. All rights reserved.

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Merocyanine dyes that exhibit antithetic cyaninelike behaviour and giant first-order hyperpolarisability (beta) values have been designed. These cyanine-type dyes open up an intriguing route towards molecular-based electrooptic materials as well as new second-harmonic generation dyes for imaging.

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The present work discusses the findings obtained from simulations of semi solid die filling of a steering knuckle, prior to actual component development using in-house developed rheo pressure die casting system. Die filling capability of A356 Al alloy at semi-solid state has been investigated using commercial software Flow-3Dcast to optimise the pouring temperature of semi-solid slurry into the die cavity, while all other variables such as gating design, die preheat temperature and injection velocity are kept constant based on the prior knowledge obtained from trial numerical simulations and experimentation. Efforts have been made to nullify the essence of costly, time consuming experiments towards obtaining high-quality castings out of the findings obtained from numerical simulations. The optimum pouring temperature identified in the present study is 610 A degrees C, which facilitates smoother slurry flow, minimum surface defect concentration, uniform temperature field and solid fraction distribution within the component cavity.

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In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.