Dynamic Supply and Threshold Voltage Scaling for CMOS Digital Circuits Using In-Situ Power Monitor

A generalized power tracking algorithm that minimizes power consumption of digital circuits by dynamic control of supply voltage and the body bias is proposed. A direct power monitoring scheme is proposed that does not need any replica and hence can sense total power consumed by load circuit across process, voltage, and temperature corners. Design details and performance of power monitor and tracking algorithm are examined by a simulation framework developed using UMC 90-nm CMOS triple well process. The proposed algorithm with direct power monitor achieves a power savings of 42.2% for activity of 0.02 and 22.4% for activity of 0.04. Experimental results from test chip fabricated in AMS 350 nm process shows power savings of 46.3% and 65% for load circuit operating in super threshold and near sub-threshold region, respectively. Measured resolution of power monitor is around 0.25 mV and it has a power overhead of 2.2% of die power. Issues with loop convergence and design tradeoff for power monitor are also discussed in this paper.

Self Repair in Circuits-Automating Open Fault Repair in Integrated Circuits Using Field-Induced Aggregation of Carbon Nanotubes

This paper presents studies on the use of carbon nanotubes dispersed in an insulating fluid to serve as an automaton for healing open-circuit interconnect faults in integrated circuits. The physics behind the repair mechanism is the electric-field-induced diffusion limited aggregation. On the occurrence of an open fault, the repair is automatically triggered due to the presence of an electric field across the gap. We perform studies on the repair time as a function of the electric field and dispersion concentrations with the above application in mind.

Layer-dependent resonant Raman scattering of a few layer MoS2

We report resonant Raman scattering of MoS2 layers comprising of single, bi, four and seven layers, showing a strong dependence on the layer thickness. Indirect band gap MoS2 in bulk becomes a direct band gap semiconductor in the monolayer form. New Raman modes are seen in the spectra of single- and few-layer MoS2 samples which are absent in the bulk. The Raman mode at similar to 230 cm(-1) appears for two, four and seven layers. This mode has been attributed to the longitudinal acoustic phonon branch at the M point (LA(M)) of the Brillouin zone. The mode at similar to 179 cm(-1) shows asymmetric character for a few-layer sample. The asymmetry is explained by the dispersion of the LA(M) branch along the G-M direction. The most intense spectral region near 455 cm(-1) shows a layer-dependent variation of peak positions and relative intensities. The high energy region between 510 and 645 cm(-1) is marked by the appearance of prominent new Raman bands, varying in intensity with layer numbers. Resonant Raman spectroscopy thus serves as a promising non invasive technique to accurately estimate the thickness of MoS2 layers down to a few atoms thick. Copyright (C) 2012 John Wiley & Sons, Ltd.

Proportional resonant controller based circulating power setup for thermal testing of multilevel inverter

A regenerative or circulating-power method is presented in this paper for heat run test on the legs of a three-level neutral point clamped (NPC) inverter. This test ensures that only losses are drawn from the dc supply, while rated power is circulated between the two legs, thus minimising wastage of energy. A proportional-resonant (PR) controller based current control scheme is proposed here for the circulating power test setup in NPC inverter. Simulation and experimental results are presented to validate the controller design at various operating conditions. Results of thermal test on the inverter legs are presented at two different operating conditions.

Comparison of 3-phase, 3-level UPF rectifier circuits for high power applications

This paper presents an analysis and comparison between two circuit topologies of the 3-phase, 3-level unity power factor (Vienna) rectifier on the basis of packaging issues and semiconductor power losses. The analysis indicates the suitability of one particular circuit variant due to restrictions on switching frequency at higher power levels. A comparison is also done between hysteresis and carrier based PWM strategies for current control of the rectifier, along with experimental evaluation of the control strategies on a hardware prototype of the rectifier. The comparison indicates that the carrier based modulation strategy is better suited for use with higher order filters that are utilized in high power applications.

A non-resonant mass sensor to eliminate the ``missing mass'' effect during mass measurement of biological materials

Resonant sensors and crystal oscillators for mass detection need to be excited at very high natural frequencies (MHz). Use of such systems to measure mass of biological materials affects the accuracy of mass measurement due to their viscous and/or viscoelastic properties. The measurement limitation of such sensor system is the difficulty in accounting for the ``missing mass'' of the biological specimen in question. A sensor system has been developed in this work, to be operated in the stiffness controlled region at very low frequencies as compared to its fundamental natural frequency. The resulting reduction in the sensitivity due to non-resonant mode of operation of this sensor is compensated by the high resolution of the sensor. The mass of different aged drosophila melanogaster (fruit fly) is measured. The difference in its mass measurement during resonant mode of operation is also presented. That, viscosity effects do not affect the working of this non-resonant mass sensor is clearly established by direct comparison. (C) 2014 AIP Publishing LLC.

Operand Isolation Circuits with Reduced Overhead for Low Power Data-Path Design

Dynamic power dissipation due to redundant switching is an important metric in data-path design. This paper focuses on the use of ingenious operand isolation circuits for low power design. Operand isolation attempts to reduce switching by clamping or latching the output of a first level of combinational circuit. This paper presents a novel method using power supply switching wherein both PMOS and NMOS stacks of a circuit are connected to the same power supply. Thus, the output gets clamped or latched to the power supply value with minimal leakage. The proposed circuits make use of only two transistors to clamp the entire Multiple Input Multiple Output (MIMO) block. Also, the latch-based designs have higher drive strength in comparison to the existing methods. Simulation results have shown considerable area reduction in comparison to the existing techniques without increasing timing overhead.

Gamma oscillations in the midbrain spatial attention network: linking circuits to function

Gamma-band (25-140 Hz) oscillations are ubiquitous in mammalian forebrain structures involved in sensory processing, attention, learning and memory. The optic tectum (01) is the central structure in a midbrain network that participates critically in controlling spatial attention. In this review, we summarize recent advances in characterizing a neural circuit in this midbrain network that generates large amplitude, space-specific, gamma oscillations in the avian OT, both in vivo and in vitro. We describe key physiological and pharmacological mechanisms that produce and regulate the structure of these oscillations. The extensive similarities between midbrain gamma oscillations in birds and those in the neocortex and hippocampus of mammals, offer important insights into the functional significance of a midbrain gamma oscillatory code.

Variations in the cyclotron resonant scattering features during 2011 outburst of 4U 0115+63

We study the variations in the Cyclotron Resonant Scattering Feature (CRSF) during 2011 outburst of the high mass X-ray binary 4U 0115+63 using observations performed with Suzaku, RXTE, Swift and INTEGRAL satellites. The wide-band spectral data with low-energy coverage allowed us to characterize the broad-band continuum and detect the CRSFs. We find that the broad-band continuum is adequately described by a combination of a low temperature (kT similar to 0.8 keV) blackbody and a power law with high energy cutoff (E-cut similar to 5.4 keV) without the need for a broad Gaussian at similar to 10 keV as used in some earlier studies. Though winds from the companion can affect the emission from the neutron star at low energies (<3 keV), the blackbody component shows a significant presence in our continuum model. We report evidence for the possible presence of two independent sets of CRSFs with fundamentals at similar to 11 and similar to 15 keV. These two sets of CRSFs could arise from spatially distinct emitting regions. We also find evidence for variations in the line equivalent widths, with the 11 keV CRSF weakening and the 15 keV line strengthening with decreasing luminosity. Finally, we propose that the reason for the earlier observed anticorrelation of line energy with luminosity could be due to modelling of these two independent line sets (similar to 11 and similar to 15 keV) as a single CRSF.