187 resultados para ionic resistance


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Mycobacterium tuberculosis utilizes unique strategies to survive amid the hostile environment of infected host cells. Infection-specific expression of a unique mycobacterial cell surface antigen that could modulate key signaling cascades can act as a key survival strategy in curtailing host effector responses like oxidative stress. We demonstrate here that hypothetical PE_PGRS11 ORF encodes a functional phosphoglycerate mutase. The transcriptional analysis revealed that PE_PGRS11 is a hypoxia-responsive gene, and enforced expression of PE_PGRS11 by recombinant adenovirus or Mycobacterium smegmatis imparted resistance to alveolar epithelial cells against oxidative stress. PE_PGRS11-induced resistance to oxidative stress necessitated the modulation of genetic signatures like induced expression of Bcl2 or COX-2. This modulation of specific antiapoptotic molecular signatures involved recognition of PE_PGRS11 by TLR2 and subsequent activation of the PI3K-ERK1/ 2-NF-kappa B signaling axis. Furthermore, PE_PGRS11 markedly diminished H2O2-induced p38 MAPK activation. Interestingly, PE_PGRS11 protein was exposed at the mycobacterial cell surface and was involved in survival of mycobacteria under oxidative stress. Furthermore, PE_PGRS11 displayed differential B cell responses during tuberculosis infection. Taken together, our investigation identified PE_PGRS11 as an in vivo expressed immunodominant antigen that plays a crucial role in modulating cellular life span restrictions imposed during oxidative stress by triggering TLR2-dependent expression of COX-2 and Bcl2. These observations clearly provide a mechanistic basis for the rescue of pathogenic Mycobacterium-infected lung epithelial cells from oxidative stress.

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A novel microprocessor-based platinum resistance temperature indicator has been developed and described. This indicator provides a linear performance over a wide dynamic temperature range of - 183.0°C to +200°C with an accuracy of better than ±0.05°C. To sasily carry out the linearization of platinum thermometer through software, the modified Callendar-Van Dusen equation is used. Test results are given to support the theory.

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The current density-voltage (J-V) characteristics of poly(3-methylthiophene) devices show a negative differential resistance (NDR) at room temperature with a large peak to valley current ratio (similar to 507). This NDR can be tuned by two orders of magnitude by controlling the carrier density due to the variation of the space-charge region in the device. The temperature and scan rate dependent J-V measurements infer that the NDR is mainly driven by the trapping and de-trapping of carriers. The photo-generation of carriers is observed to reduce the NDR effect.

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Negative differential resistance (NDR) in current-voltage (I-V) characteristics and apparent colossal electroresistance were observed in Gd0.5Sr0.5MnO3 single crystals at low temperatures. The continuous dc I-V measurements showed a marked thermal drift. In addition, temperature of the sample surface was found to be significantly higher than that of the base at high applied currents. Two different strategies namely estimation and diminution of the Joule heating (pulsed I-V measurements) were employed to investigate its role in the electric transport properties. Our experiments reveal that the NDR in Gd0.5Sr0.5MnO3 is a consequence of Joule heating rather than the melting of charge order. (C) 2010 American Institute of Physics. doi:10.1063/1.3486221]

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We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO2 substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as 0.1-0.5. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation. (C) 2010 American Institute of Physics. doi:10.1063/1.3493655]

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We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered one-dimensional conductor. We show that in the thermodynamic limit this distribution is characterized by two independent parameters for strong disorder, leading to a two-parameter scaling theory of localization. Only in the limit of weak disorder we recover single parameter scaling, consistent with existing theoretical treatments.

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The electrical resistance of the binary liquid system cyclohexane + acetic anhydride is measured, in the critical region, both in the pure mixture and when the mixture is doped with small amounts (≈ 100 ppm) of H2O/D2O impurities.T c was approached to aboutt=3×10−6 wheret=(T −T c )/T c . The critical exponentb ≈ 0.35 in the fit of the resistance data to the equationdR/dT ∼t −b does not seem to be affected appreciably by the impurities. There is a sign reversal ofdR/dt in the non-critical region. Binary liquid systems seem to violate the universality of the critical resistivity.

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A study of the correlations between material properties and normalized erosion resistance (inverse of erosion rates) of various materials tested in the rotating disk and the flow venturi at various intensities indicates that different individual properties influence different stages of erosion. At high and low intensities of erosion, energy properties predominate the phenomenon, whereas at intermediate intensities strength and acoustic properties become more significant. However, both strength and energy properties are significant in the correlations for the entire spectrum of erosion when extensive cavitation and liquid impingement data from several laboratories involving different intensities and hydrodynamic conditions are considered. The use of true material properties improved the statistical parameters by 3 to 37%, depending on the intensity of erosion. It is possible to evaluate qualitatively the erosion resistances of materials based on the true stress-true strain curves.

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The electrical resistance is measured in two binary liquid systems CS2 + CH3NO2 and n-C7H16 + CH3OH in the critical region as a function of frequency from 10 Hz to 100 kHz. The critical exponent b ≈ 0.35 in the singularity of dR/dT α (T - Tc)−b near Tc has no appreciable dependence upon the frequency. Thus any contribution from dielectric dispersion to the critical resistivity is not appreciable. The universal behaviour of the dR/dT anomaly does not seem to be followed in binary liquid systems.

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Ion transport in a polymer-ionic liquid (IL) soft matter composite electrolyte is discussed here in detail in the context of polymer-ionic liquid interaction and glass transition temperature The dispersion of polymethylmetacrylate (PMMA) in 1-butyl-3-methylimidazolium hexafluorophosphate (BMIPF6) and 1-butyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide (BMITFSI) resulted in transparent composite electrolytes with a jelly-like consistency The composite ionic conductivity measured over the range -30 C to 60 C was always lower than that of the neat BMITFSI/BMIPF6 and LiTFSI-BMITFSI/LiTFSI-BMIPF6 electrolytes but still very high (>1 mS/cm at 25 degrees C up to 50 wt% PMMA) While addition of LiTFSI to IL does not influence the glass T-g and T-m melting temperature significantly dispersion of PMMA (especially at higher contents) resulted in increase in T-g and disappearance of T-m In general the profile of temperature-dependent ionic conductivity could be fitted to Vogel-Tamman-Fulcher (VTF) suggesting a solvent assisted ion transport However for higher PMMA concentration sharp demarcation of temperature regimes between thermally activated and solvent assisted ion transport were observed with the glass transition temperature acting as the reference point for transformation from one form of transport mechanism to the other Because of the beneficial physico-chemical properties and interesting ion transport mechanism we envisage the present soft matter electrolytes to be promising for application in electrochromic devices (C) 2010 Elsevier Ltd All rights reserved

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Several methods for improving the strength of metallic materials are available and correlations between strength and various microstructural features have been established. The purpose of this paper is to review parallel developments favouring improved fracture resistance. Resistance to fracture in monotonie loading, cyclic loading and when fracture is environment-aided have been considered in steels, aluminium alloys and anisotropic materials. Finally, the question of optimising alloy behaviour is discussed.

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In β-AgI and β-Ag3SI the ionic conductivity has been measured at frequencies from 1kHz to 2.6 GHz and from 10 MHz to 10 THz, respectively. In both phases we observe a conductivity increase of some orders of magnitude, due to localized types of motion of the silver ions. In β-AgI the increase is found at about 1 MHz and reflects cooperative back-and-forth hopping processes between adjacent tetrahedral sites. In β-Ag3SI the phenomenon occurs at microwave frequencies. Here it is caused by a non-hopping, non-periodic localized Ag+-motion within shallow potentials.

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A model incorporating the surface conductivity and morphology of the composite solid electrolytes is envisaged to explain their conduction behaviour. The conductivity data on LinX−50 m/o Al2O3 (X = F−, Cl−, Br−, CO32−, SO42−, PO43−) composites prepared by thermal decomposition of LinX·2nAl(OH)3·mH2O salts and Li2SO4−A (A=Al2O3, CeO2, Y2O3, Yb2O3, Zr2O3, ZrO2 and BaTiO3) composites prepared by mechanical mixing of the components are examined in the light of this model. It is surmised that the particle size of both the dispersoids and the hosts not only influence the ionic conductivity of the host matrix but also affect its bulk properties.