Influence of Band Non-Parabolicity on Few Ballistic Properties of III-V Quantum Wire Field Effect Transistors Under Strong Inversion

A simplified yet analytical approach on few ballistic properties of III-V quantum wire transistor has been presented by considering the band non-parabolicity of the electrons in accordance with Kane's energy band model using the Bohr-Sommerfeld's technique. The confinement of the electrons in the vertical and lateral directions are modeled by an infinite triangular and square well potentials respectively, giving rise to a two dimensional electron confinement. It has been shown that the quantum gate capacitance, the drain currents and the channel conductance in such systems are oscillatory functions of the applied gate and drain voltages at the strong inversion regime. The formation of subbands due to the electrical and structural quantization leads to the discreetness in the characteristics of such 1D ballistic transistors. A comparison has also been sought out between the self-consistent solution of the Poisson's-Schrodinger's equations using numerical techniques and analytical results using Bohr-Sommerfeld's method. The results as derived in this paper for all the energy band models gets simplified to the well known results under certain limiting conditions which forms the mathematical compatibility of our generalized theoretical formalism.

On the valence state of molybdenum in Ce2MoO6

he valence state of molybdenum in cubic Ce2MoO6 was investigated using magnetic susceptibility measurements, electron spin resonance spectroscopy and X-ray absorption spectroscopy. The results are consistent with the formulation Ce3+Ce4+Mo5+O6.

Nitrile Reversible ketenimine tautomerism in substituted alkylidene malononitriles and alkylidene cyanoacetates: A characteristic UV absorption band

Several alkylidene malononitriles (1b,1d,1e,2b and4b) and alkylidene cyanoacetates (1a,2a and4a) studied exhibit a long wavelength UV absorption band around 355 nm which shows a hyperchromic effect in the presence of ethanolic alkali. This band has been assigned to the ketenimine tautomer (5). Addition of water to1b,1e and2b gives the corresponding pyridine diols (7a,7b and8a) respectively. Similarly, addition of ethanol to1e and2b gave the corresponding ethoxypyridine derivatives (7c and8b). Mechanism of formation of these compounds is discussed. Structures, as well as mechanism of formation of1c,7c and10 obtained from1b,1e and2b respectively on standing at room temperature are also discussed.

Nitrileketenimine tautomerism in substituted alkylidene malononitriles and alkylidene cyanoacetates: A characteristic UV absorption band

Several alkylidene malononitriles (1b,1d,1e,2b and4b) and alkylidene cyanoacetates (1a,2a and4a) studied exhibit a long wavelength UV absorption band around 355 nm which shows a hyperchromic effect in the presence of ethanolic alkali. This band has been assigned to the ketenimine tautomer (5). Addition of water to1b,1e and2b gives the corresponding pyridine diols (7a,7b and8a) respectively. Similarly, addition of ethanol to1e and2b gave the corresponding ethoxypyridine derivatives (7c and8b). Mechanism of formation of these compounds is discussed. Structures, as well as mechanism of formation of1c,7c and10 obtained from1b,1e and2b respectively on standing at room temperature are also discussed.

On the valence state of molybdenum in Ce2MoO6

The valence state of molybdenum in cubic Ce2MoO6 was investigated using magnetic susceptibility measurements, electron spin resonance spectroscopy and X-ray absorption spectroscopy. The results are consistent with the formulation Ce3+Ce4+Mo5+O6.

X-ray absorption spectroscopic study of the mixed valence system CePd3

Mixed valency in CePd3 has been examined by a study of the LIII (Ce) absorption edge in this compound as well as other model compounds. In CePd3, peaks characteristic of 3+ and 4+ states of Ce are found to be separated by 2 eV.

High-pressure magnetic susceptibility of the intermediate valence system EuPd2Si2

The pressure dependence (0-7 kbar) of the magnetic susceptibility is reported for the intermediate valence system EuPd2Si2 in the temperature interval 77-300K. It is found that the thermally induced valence transition becomes more gradual on application of pressure The characteristic fluctuation temperature Tf, also seems to be pressure dependent.

Normalized Two Stage SVQ for Minimum Complexity Wide-band LSF Quantization

We develop a two stage split vector quantization method with optimum bit allocation, for achieving minimum computational complexity. This also results in much lower memory requirement than the recently proposed switched split vector quantization method. To improve the rate-distortion performance further, a region specific normalization is introduced, which results in 1 bit/vector improvement over the typical two stage split vector quantizer, for wide-band LSF quantization.

A Simple Method of Obtaining the Band Strengths in the Electronic Spectra of Diatomic Molecules

Relative band strengths of diatomic molecules for which the product of Franck-Condon factor and r-centroid is approximately equal to 1 for (0,0) band can be determined by a simple method which will be in good agreement with the smoothed array of experimental values.

Microstrip square ring antenna for dual-band operation

This paper presents a generalized approach to design an electromagnetically coupled microstrip ring antenna for dual-band operation. By widening two opposite sides of a square ring antenna, its fractional bandwidth at the primary resonance mode can be increased significantly so that it may be used for practical applications. By attaching a stub to the inner edge of the side opposite to the feed arm, some of the losses in electrical length caused by widening can be regained. More importantly, this addition also alters the current distribution on the antenna and directs radiations at the second resonant frequency towards boresight. It has also been observed that for the dual frequency configurations studied, the ratio of the resonant frequencies (center dot r(2)center dot center dot r(1)) can range between 1.55 and 2.01. This shows flexibility in designing dual frequency antennas with a desired pair of resonant frequencies.

ICI-ISI mitigation in cooperative SFBC-OFDM with carrier frequency offset

Synchronization issues pose a big challenge in cooperative communications. The benefits of cooperative diversity could be easily undone by improper synchronization. The problem arises because it would be difficult, from a complexity perspective, for multiple transmitting nodes to synchronize to a single receiver. For OFDM based systems, loss of performance due to imperfect carrier synchronization is severe, since it results in inter-carrier interference (ICI). The use of space-time/space-frequency codes from orthogonal designs are attractive for cooperative encoding. But orthogonal designs suffer from inter-symbol interference (ISI) due to the violation of quasi-static assumption, which can arise due to frequency- or time-selectivity of the channel. In this paper, we are concerned with combating the effects of i) ICI induced by carrier frequency offsets (CFO), and ii) ISI induced by frequency selectivity of the channel, in a cooperative communication scheme using space-frequency block coded (SFBC) OFDM. Specifically, we present an iterative interference cancellation (IC) algorithm to combat the ISI and ICI effects. The proposed algorithm could be applied to any orthogonal or quasi-orthogonal designs in cooperative SFBC OFDM schemes.

A novel iterative frequency offset estimation in an OFDM system

The Orthogonal Frequency Division Multiplexing (OFDM) is a form of Multi-Carrier Modulation where the data stream is transmitted over a number of carriers which are orthogonal to each other i.e. the carrier spacing is selected such that each carrier is located at the zeroes of all other carriers in the spectral domain. This paper proposes a new novel iterative frequency offset estimation algorithm for an OFDM system in order to receive the OFDM data symbols error-free over the noisy channel at the receiver and to achieve frequency synchronization between the transmitter and the receiver. The performance of this algorithm has been studied in AWGN, ADSL and SUI channels successfully.

A novel fractional sampling offset estimation in an OFDM system

The Orthogonal Frequency Division Multiplexing (OFDM) is a form of Multi-Carrier Modulation where the data stream is transmitted over a number of carriers which are orthogonal to each other i.e. the carrier spacing is selected such that each carrier is located at the zeroes of all other carriers in the spectral domain. This paper proposes a new novel sampling offset estimation algorithm for an OFDM system in order to receive the OFDM data symbols error-free over the noisy channel at the receiver and to achieve fine timing synchronization between the transmitter and the receiver. The performance of this algorithm has been studied in AWGN, ADSL and SUI channels successfully.

Electronic structure and bonding of beta-rhombohedral boron using cluster fragment approach

Theoretical studies using density functional theory are carried out to understand the electronic structure and bonding and electronic properties of elemental beta-rhombohedral boron. The calculated band structure of ideal beta-rhombohedral boron (B-105) shows valence electron deficiency and depicts metallic behavior. This is in contrast to the experimental result that it is a semiconductor. To understand this ambiguity we discuss the electronic structure and bonding of this allotrope with cluster fragment approach using our recently proposed mno rule. This helps us to comprehend in greater detail the structure of B-105 and materials which are closely related to beta-rhombohedral boron. The molecular structures B12H12-2, B28H21+1, BeB27H21, LiB27H21-1, CB27H21+2, B57H36+3, Be3B54H36, and Li2CB54H36, and corresponding solids Li8Be3B102 and Li10CB102 are arrived at using these ideas and studied using first principles density functional theory calculations.

A silicon micromachined photonic band gap cell, characteristics and an application

A novel PBG cell based on micromachining of Silicon using wet anisotropic etching has been considered. Since this is based on etching of the Silicon substrate, it is amenable to fabrication with standard Silicon processes and integration with millimeter wave circuits. We characterize this kind of PBG cell by full wave simulations using a time domain code. For the purpose of characterization, the scenario of a 50 ohm microstrip line placed on a Silicon substrate which is anisotropically etched to create patterns with sloping walls is considered. This is shown to produce the well known PBG response of stop bands in certain frequency bands. We look at the variation in the transmission coefficient (S-21) response as the number of periods, length based average fill factor and depth of micromachining are varied. One application of a low pass filter has been proposed and simulated results are given.