143 resultados para Road deposited solids


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Lithium phosphorus oxynitride (LiPON) thin films as solid electrolytes were prepared by reactive radio frequency (rf) magnetron sputtering from Li3PO4 powder compact target. High deposition rates and ease of manufacturing powder target compared with conventional ceramic Li3PO4 targets offer flexibility in handling and reduce the cost associated. Rf power density varied from 1.7 Wcm(-2) to 3 Wcm(-2) and N-2 flow from 10 to 30 sccm for a fixed substrate to target distance of 4 cm for best ionic conductivity. The surface chemical analysis done by X-ray photoelectron spectroscopy showed incorporation of nitrogen into the film as both triply, NE and doubly. Nd coordinated form. With increased presence of NE, ionic conductivity of LiPON was found to be increasing. The electrochemical impedance spectroscopy of LiPON films confirmed an ionic conductivity of 1.1 x 10(-6) Scm(-1) for optimum rf power and N-2 flow conditions. (C) 2011 Elsevier B.V. All rights reserved.

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Zinc oxide (ZnO) and indium doped ZnO (IZO) thin films with different indium compositions were grown by pulsed laser deposition technique on corning glass substrate. The effect of indium concentration on the structural, morphological, optical and electrical properties of the film was studied. The films were oriented along c-direction with wurtzite structure and highly transparent with an average transmittance of more than 80% in the visible wavelength region. The energy band gap was found to decrease with increasing indium concentration. High transparency makes the films useful as optical windows while the high band gap values support the idea that the film could be a good candidate for optoelectronic devices. The value of resistivity observed to decrease initially with doping concentration and subsequently increases. IZO with 1% of indium showed the lowest resistivity of 2.41 x 10(-2) Omega cm and large transmittance in the visible wavelength region. Especially 1% IZO thin film was observed to be a suitable transparent conducting oxide material to potentially replace indium tin oxide. (C) 2011 Elsevier B.V. All rights reserved.

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A method based on the minimal-spanning tree is extended to a collection of points in three dimensions. Two parameters, the average edge length and its standard deviation characterize the disorder. The structural phase diagram for a monatomic system of particles and the characteristic values for the uniform random distribution of points have been obtained. The method is applied to hard spheres and Lennard-Jones systems. These systems occupy distinct regions in the structural phase diagram. The structure of the Lennard-Jones system approaches that of the defective close-packed arrangements at low temperatures whereas in the liquid regime, it deviates from the close-packed configuration.

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The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 degrees C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator-metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator-metal transition temperature against the 40% GMR in the case of stoichiometric thin films. (C) 1995 American Institute of Physics.

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C-70 films deposited on highly oriented pyrolytic graphite (HOPG), Ag(110), Ag(111) and Pt(110) substrates have been investigated by scanning tunnelling microscopy. Interesting observations on novel molecular arrangements, as well as orientational disorder, are presented. Solid solutions of C-60 and C-70 show interesting packing of these molecules when deposited on HOPG.

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Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10(-6) A cm(-2) al a field of 120 kV cm(-1). A rapid thermal annealing process at 800 degrees C further increased the dielectric constant to 90 and increased the leakage current density to 5 x 10(-6) A cm(-2). The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 x 10(12) cm(-2) eV(-1), which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

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Optical and structural properties of reactive ion beam sputter deposited CeO2 films as a function of oxygen partial pressures (P-O2) and substrate temperatures (T-s) have been investigated. The films deposited at ambient temperature with P-O2 of 0.01 Pa have shown a refractive index of 2.36 which increased to 2.44 at 400 degrees C. Refractive index and extinction coefficient are sensitive up to a T-s of similar to 200 degrees C. Raman spectroscopy and X-ray diffraction (XRD) have been used to characterise the structural properties. A preferential orientation of (220) was observed up to a T-s of 200 degrees C and it changed to (200) at 400 degrees C: and above. Raman line broadening, peak shift and XRD broadening indicate the formation of nanocrystalline phase for the films deposited up to a substrate temperature of 300 degrees C. However, crystallinity of the films were better for T-s values above 300 degrees C. In general both optical and structural properties were unusual compared to the films deposited by conventional electron beam evaporation, but were similar in some aspects to those deposited by ion-assisted deposition. Apart from thermal effects, this behavior is also attributed to the bombardment of backscattered ions/neutrals on the growing film as well as the higher kinetic energy of the condensing species, together resulting in increased packing density. (C) 1997 Elsevier Science S.A.

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During the last decade, developing countries such as India have been exhibiting rapid increase in human population and vehicles, and increase in road accidents. Inappropriate driving behaviour is considered one of the major causes of road accidents in India as compared to defective geometric design of pavement or mechanical defects in vehicles. It can result in conditions such as lack of lane discipline, disregard to traffic laws, frequent traffic violations, increase in crashes due to self-centred driving, etc. It also demotivates educated drivers from following good driving practices. Hence, improved driver behaviour can be an effective countermeasure to reduce the vulnerability of road users and inhibit crash risks. This article highlights improved driver behaviour through better driver education, driver training and licensing procedures along with good on-road enforcement; as an effective countermeasure to ensure road safety in India. Based on the review and analysis, the article also recommends certain measures pertaining to driver licensing and traffic law enforcement in India aimed at improving road safety.

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In this paper, an overview of some recent computational studies by the authors on ductile crack initiation under mode I, dynamic loading is presented. In these studies, a large deformation finite element procedure is employed along with the viscoplastic version of the Gurson constitutive model that accounts for the micro-mechanical processes of void nucleation, growth and coalescence. A three-point bend fracture specimen subjected to impact, and a single edge notched specimen loaded by a tensile stress pulse are analysed. Several loading rates are simulated by varying the impact speed or the rise time and magnitude of the stress pulse. A simple model involving a semi-circular notch with a pre-nucleated circular hole situated ahead of it is considered. The growth of the hole and its interaction with the notch tip, which leads to plastic strain and porosity localization in the ligament connecting them, is simulated. The role of strain-rate dependence on ductile crack initiation at high loading rates, and the specimen geometry effect on the variation of dynamic fracture toughness with loading rate are Investigated.

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Use of microwaves in the synthesis of materials is gaining importance. Microwave-assisted synthesis is generally much faster, cleaner, and more economical than the conventional methods. A variety of materials such as carbides, nitrides, complex oxides, silicides, zeolites, apatite, etc. have been synthesized using microwaves. Many of these are of industrial and technological importance. An understanding of the microwave interaction with materials has been based on concepts of dielectric heating and of the resonance absorption due to rotational excitation. This review presents a summary of recent reports of microwave synthesis of inorganic materials. Various observations regarding microwave interaction with materials are also briefly discussed.

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Nanoindentation tests were carried out at different locations in a Ti rich NiTi film deposited on a 3 `' silicon wafer by dc magnetron sputtering. The purpose of doing nanoindentation at different locations was to check the uniformity of the sample with respect to its mechanical behaviour and shape memory effect. The results showed that elastic modulus and hardness measured by nanoindentation was similar at different locations in the 3 `' wafer. Nanoindcntation coupled with depth profiling of residual indents using AFM also showed that the extent of shape memory recovery obtained by heating the film above its martensite to austcnite phase transformation temperature was also similar at different locations in the 3 `' wafer. However, the measured recovery ratio was lower than that predicted from theoretical calculations for indents made using Berkovich indenter. The results showed that the deposition process resulted in a NiTi film with uniform composition, mechanical properties and shape memory behaviour.

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Electrochemically deposited Cu-Ni black coatings on molybdenum substrate from ethylenediaminetetraacetic acid (EDTA) bath solution are shown to exhibit good optical properties (alpha = 0.94, epsilon = 0.09). The deposit is characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). Cu is present in metallic and +2 oxidation states in the as-prepared Cu-Ni black coating, whereas Ni2+ as well as Ni3+ species are observed in the same coating. Cu and Ni are observed in their metallic state after 10 and 20 min sputtering. X-ray initiated Auger electron spectroscopy (XAES) of Cu and Ni also agrees well with XPS investigations. (C) 2002 Elsevier Science Ltd. All rights reserved.

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The objectives of this paper are to examine the loss of crack tip constraint in dynamically loaded fracture specimens and to assess whether it can lead to enhancement in the fracture toughness at high loading rates which has been observed in several experimental studies. To this end, 2-D plane strain finite element analyses of single edge notched (tension) specimen and three point bend specimen subjected to time varying loads are performed. The material is assumed to obey the small strain J(2) flow theory of plasticity with rate independent behaviour. The results demonstrate that a valid J-Q field exists under dynamic loading irrespective of the crack length and specimen geometry. Further, the constraint parameter Q becomes strongly negative at high loading rates, particularly in deeply cracked specimens. The variation of dynamic fracture toughness K-dc with stress intensity rate K for cleavage cracking is predicted using a simple critical stress criterion. It is found that inertia-driven constraint loss can substantially enhance K-dc for (K) over dot > 10(5) MPa rootm/s.

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Thin films of ZnO, Li doped ZnO (ZLO) and multilayer of ZnO and ZLO (ZnO/ZLO) were grown on silicon and corning glass substrates by pulsed laser deposition technique. Single phase formation and the crystalline qualities of the films were analyzed by X-ray diffraction and Li composition in the film was investigated to be 15 wt% by X-ray photoelectron spectroscopy. Raman spectrum reveals the hexagonal wurtzite structure of ZnO, ZLO and ZnO/ZLO multilayer and confirms the single phase formation. Films grown on corning glass shows more than 80% transmittance in the visible region and the optical band gaps were calculated to be 3.245, 3.26 and 3.22 eV for ZnO, ZLO and ZnO/ZLO, respectively. An efficient blue emission was observed in all films which were grown on silicon (1 0 0) substrate by photoluminescence (PL). PL measurements at different temperatures reveal that the PL emission intensity of ZnO/ZLO multilayer was weakly dependent on temperature as compared to the single layers of ZnO and ZLO and the wavelength of emission was independent of temperature. Our results indicate that ZnO/ZLO multilayer can be used for the fabrication of blue light emitting diodes. (C) 2011 Elsevier B.V. All rights reserved.