RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

Yttrium oxide (Y203) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethy1-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 C. The films have been deposited under influence of varying RF self-bias (-50 V to 175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2 03 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y203. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y203 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y203 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness. (C) 2013 Elsevier B.V. All rights reserved.

Switching and release dynamics of an electrostatically actuated MEMS switch under the influence of squeeze-film damping

This paper reports analytical modeling, simulation and experimental validation for switching and release times of an electrostatically actuated micromachined switch. Presented work is an extension of our earlier work [1] that analytically argued, and numerically and experimentally demonstrated, why pull-in time is larger that pull-up time when the actuation voltage is less than twice of the pull-in voltage. In this paper, switching dynamics is investigated under the influence of squeeze-film damping. Tests were performed on SOI (silicon-on-insulator) based parallel beams structures.Typical voltage requirement for actuation is in the range of 10-30 V. All the experiments were performed in normal atmospheric pressure. Measurement results confirm that the quality factor Q has appreciable effect on the release time compared to the switching time. The quality factor Q is extracted from the response measurement and compared with the ANSYS simulation result. In addition, the dynamic pull-in effect has also been studied and reported in this paper. A contribution of this work includes the effect of various phenomena such as squeeze-film damping, dynamic pull-in, and frequency pull-in effects on the switching dynamics of a MEMS switch.

A comparative study of room temperature ferromagnetism in MgO films deposited by rf/dc sputtering using high purity Mg and MgO targets

Thin films of nanocrystalline MgO were deposited on glass/Si substrates by rf/dc sputtering from metallic Mg, and ceramic MgO targets. The purpose of this study is to identify the differences in the properties, magnetic in particular, of MgO films obtained on sputter deposition from 99.99% pure metallic Mg target in a controlled Nitrogen + Oxygen partial pressure (O(2)pp)] atmosphere as against those deposited using an equally pure ceramic MgO target in argon + identical oxygen ambience conditions while maintaining the same total pressure in the chamber in both cases. Characterization of the films was carried out by X-ray diffraction, focussed ion beam cross sectioning, atomic force microscopy and SQUID-magnetometry. The `as-obtained' films from pure Mg target are found to be predominantly X-ray amorphous, while the ceramic MgO target gives crystalline films, (002) oriented with respect to the film plane. The films consisted of nano-crystalline grains of size in the range of about 0.4 to 4.15 nm with the films from metallic target being more homogeneous and consisting of mostly subnanometer grains. Both the types of films are found to be ferromagnetic to much above room temperature. We observe unusually high maximum saturation magnetization (MS) values of 13.75 emu/g and similar to 4.2 emu/g, respectively for the MgO films prepared from Mg, and MgO targets. The origin of magnetism in MgO films is attributed to Mg vacancy (V-Mg), and 2p holes localized on oxygen sites. The role of nitrogen in enhancing the magnetic moments is also discussed.

Electrothermally tunable MEMS filters

MEMS resonators have potential application in the area of frequency selective devices (e.g., gyroscopes, mass sensors, etc.). In this paper, design of electro thermally tunable resonators is presented. SOIMUMPs process is used to fabricate resonators with springs (beams) and a central mass. When voltage is applied, due to joule heating, temperature of the conducting beams goes up. This results in increase of electrical resistance due to mobility degradation. Due to increase in the temperature, springs start softening and therefore the fundamental frequency decreases. So for a given structure, one can modify the original fundamental frequency by changing the applied voltage. Coupled thermal effects result in non-uniform heating. It is observed from measurements and simulations that some parts of the beam become very hot and therefore soften more. Consequently, at higher voltages, the structure (equivalent to a single resonator) behaves like coupled resonators and exhibits peak splitting. In this mode, the given resonator can be used as a band rejection filter. This process is reversible and repeatable. For the designed structure, it is experimentally shown that by varying the voltage from 1 to 16V, the resonant frequency could be changed by 28%.

Pulsed rf magnetron sputtered alumina thin films

Alumina thin films were deposited on titanium (Ti) and fused quartz by both direct and reactive pulsed rf magnetron sputtering techniques. X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy were utilized to study the phases and surface morphology of the films. The as-deposited alumina thin films were amorphous. However, after annealing at 500 degrees C in vacuum, the crystalline peaks corresponding to the Theta (0), Delta (8) and Chi ()) alumina phases were obtained. The optical transmittance and reflectance as well as IR emittanc,e data were also evaluated for the thin films. The transmittance, e.g., (similar to 90%) of the bare quartz substrate was not changed even when the alumina thin films were deposited for an hour. However, further increase in deposition time (e.g., 7 h) of the alumina thin films showed only a marginal decrease (e.g., similar to 5%) in average transmittance of the bare quartz substrate. The direct and indirect optical band gaps and extinction coefficient of the alumina films were estimated from the transmittance spectra. The IR emittance of the Ti substrate (e.g., similar to 16%) was almost constant after depositing alumina thin films for an hour. Further increase in deposition time showed only a marginal increase (e.g., similar to 9%) in IR emittance value. Therefore, it is proposed that the alumina films developed in the present work can act as a protective cover for the Ti substrate while retaining the thermo-optical properties of the same. The nanohardness and Young's modulus of the alumina thin films were evaluated by the novel nanoindentation technique. The nanohardness was measured as similar to 6 GPa. Further, Young's modulus was evaluated as similar to 116 GPa. The magnitudes of the nanomechanical properties of the thin films were a little smaller than those reported in the literature. This was linked to the lack of crystalline phases in the as-deposited alumina thin films. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

MEMS Tunable Optical Filter Based on Multi-Ring Resonator

We propose a novel MEMS tunable optical filter with a flat-top pass band based on multi-ring resonator in an electrostatically actuated microcantilever for communication application. The filter is basically structured on a microcantilever beam and built in optical integrated ring resonator which is placed in one end of the beam to gain maximum stress on the resonator. Thus, when a DC voltage is applied, the beam will bend, that induces a stress and strain in the ring, which brings a change in refractive index and perimeter of the rings leading to change in the output spectrum shift, providing the tenability as high as 0.68nm/mu N. and it is capable of tuning up to 1.7nm.

Improved design methodology for the development of electrically actuated MEMS structures

A comprehensive design flow is proposed for the design of Micro Electro Mechanical Systems that are fabricated using SOIMUMPs process. Many of the designers typically do not model the temperature dependency of electrical conductivity, thermal conductivity and convection coefficient, as it is very cumbersome to create/incorporate the same in the existing FEM simulators. Capturing these dependencies is very critical particularly for structures that are electrically actuated. Lookup tables that capture the temperature dependency of electrical conductivity, thermal conductivity and convection coefficient are created. These look up tables are taken as inputs for a commercially available FEM simulator to model the semiconductor behavior. It is demonstrated that when temperature dependency for all the above mentioned parameters is not captured, then the error in estimation of the maximum temperature (for a given structure) could be as high as 30%. Error in the estimated resistance value under the same conditions is as high as 40%. When temperature dependency of the above mentioned parameters is considered then error w.r.t the measured values is less than 5%. It is evident that error in temperature estimates leads to erroneous results from mechanical simulations as well.

A 0.5-2.0 GHz injection locked oscillator cascade for parallel wideband RF spectrum sensing

An area-efficient, wideband RF frequency synthesizer, which simultaneously generates multiple local oscillator (LO) signals, is designed. It is suitable for parallel wideband RF spectrum sensing in cognitive radios. The frequency synthesizer consists of an injection locked oscillator cascade (ILOC) where all the LO signals are derived from a single reference oscillator. The ILOC is implemented in a 130-nm technology with an active area of . It generates 4 uniformly spaced LO carrier frequencies from 500 MHz to 2 GHz. This design is the first known implementation of a CMOS based ILOC for wide-band RF spectrum sensing applications.

Studies on RF Magnetron Sputtered HfO2 Thin Films for Microelectronic Applications

We investigated the effect of oxygen flow rate during the reactive magnetron sputtering on the compositional, structural, optical and electrical properties of HfO2 films. We also studied the influence of annealing temperature on the structural and electrical properties of optimized HfO2 films of 25 to 30 nm thick. X-ray photoelectron study reveals that the films deposited at 15 SCCM of oxygen flow rate are stoichiometric and have an optical band gap of 5.86 eV. X-ray diffraction indicates that films without oxygen flow are amorphous, and beyond an oxygen flow rate of 5 SCCM exhibit polycrystalline monoclinic structure. At an annealing temperature of 600 degrees C, tetragonal phase was observed besides the monoclinic phase. The dielectric constant of 11 and low leakage currents of 1 x 10(-7) A/cm(2) were achieved for the stoichiometric films. As-deposited films show significant frequency dispersion due to the presence of defect states at the HfO2/Si interface, and it reduces after annealing.

Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

Titanium dioxide thin films were deposited by RF reactive magnetron sputtering technique on p-type silicon(100) substrates held at temperatures in the range 303-673 K. The influence of substrate temperature on the core level binding energies, chemical bonding configuration, crystallographic structure and dielectric properties was investigated. X-ray photoelectron spectroscopy studies and Fourier transform infrared transmittance data confirmed the formation of stoichiometric films with anatase phase at a substrate temperature of 673 K. The films formed at 303 K were nanocrystalline with amorphous matrix while those deposited at 673 K were transformed in to crystalline phase and growth of grains in pyramidal like structure as confirmed by X-ray diffraction and atomic force microscopy respectively. Metal-oxide-semiconductor capacitors were fabricated with the configuration of Al/TiO2/Si structures. The current voltage, capacitance voltage and conductance voltage characteristics were studied to understand the electrical conduction and dielectric properties of the MOS devices. The leakage current density (at gate voltage of 2 V) decreased from 2.2 x 10(-6) to 1.7 x 10(-7) A/cm(2), the interface trap density decreased from 1.2 x 10(13) to 2.1 x 10(12) cm(-2) eV(-1) and the dielectric constant increased from 14 to 36 with increase of substrate temperature from 303 to 673 K.

Part I: High-Voltage MOS Device Design for Improved Static and RF Performance

In this paper, for the first time, the key design parameters of a shallow trench isolation-based drain-extended MOS transistor are discussed for RF power applications in advanced CMOS technologies. The tradeoff between various dc and RF figures of merit (FoMs) is carefully studied using well-calibrated TCAD simulations. This detailed physical insight is used to optimize the dc and RF behavior, and our work also provides a design window for the improvement of dc as well as RF FoMs, without affecting the breakdown voltage. An improvement of 50% in R-ON and 45% in RF gain is achieved at 1 GHz. Large-signal time-domain analysis is done to explore the output power capability of the device.

Part II: A Fully Integrated RF PA in 28-nm CMOS With Device Design for Optimized Performance and ESD Robustness

In this paper, we report drain-extended MOS device design guidelines for the RF power amplifier (RF PA) applications. A complete RF PA circuit in a 28-nm CMOS technology node with the matching and biasing network is used as a test vehicle to validate the RF performance improvement by a systematic device design. A complete RF PA with 0.16-W/mm power density is reported experimentally. By simultaneous improvement of device-circuit performance, 45% improvement in the circuit RF power gain, 25% improvement in the power-added efficiency at 1-GHz frequency, and 5x improvement in the electrostatic discharge robustness are reported experimentally.

RF plasma enhanced MOCVD of yttria stabilized zirconia thin films using octanedionate precursors and their characterization

Yttria stabilized zirconia thin films have been deposited by RF plasma enhanced MOCVD technique on silicon substrates at substrate temperature of 400 degrees C. Plasma of precursor vapors of (2,7,7-trimethyl-3,5-octanedionate) yttrium (known as Y(tod)(3)), (2,7,7-trimethyl-3,5-octanedionate) zirconium (known as Zr(tod)(4)), oxygen and argon gases is used for deposition. To the best of our knowledge, plasma assisted MOCVD of YSZ films using octanediaonate precursors have not been reported in the literature so far. The deposited films have been characterized by GIXRD, FTIR, XPS, FESEM, AFM, XANES, EXAFS, EDAX and spectroscopic ellipsometry. Thickness of the films has been measured by stylus profilometer while tribological property measurement has been done to study mechanical behavior of the coatings. Characterization by different techniques indicates that properties of the films are dependent on the yttria content as well as on the structure of the films. (C) 2015 Elsevier B.V. All rights reserved.