A Fluidic Drive System for Intra-Aortic Balloon Heart Assist Device

Intra-aortic balloon pumping is a counter pulsation technique for temporary circulatory assistance in cardiogenic shock and other low cardiac output conditions. Conventional systems use a balloon at the end of a catheter driven by a solenoid valve, controlled by patient's ECG or ventricular pressure signal. This results in time delay introducted by solenoid spool inertia, gas inertia, and hysteresis effects of the solenoid. Fluidics, because of their non-moving part operation and high switching speeds, minimizes the inertial effects while contributing high reliability. This communication describes a fluidic system developed for driving the balloon accepting electric control signals.

Error, Confidence, and Cost in Engineering Computations

The questions that one should answer in engineering computations - deterministic, probabilistic/randomized, as well as heuristic - are (i) how good the computed results/outputs are and (ii) how much the cost in terms of amount of computation and the amount of storage utilized in getting the outputs is. The absolutely errorfree quantities as well as the completely errorless computations done in a natural process can never be captured by any means that we have at our disposal. While the computations including the input real quantities in nature/natural processes are exact, all the computations that we do using a digital computer or are carried out in an embedded form are never exact. The input data for such computations are also never exact because any measuring instrument has inherent error of a fixed order associated with it and this error, as a matter of hypothesis and not as a matter of assumption, is not less than 0.005 per cent. Here by error we imply relative error bounds. The fact that exact error is never known under any circumstances and any context implies that the term error is nothing but error-bounds. Further, in engineering computations, it is the relative error or, equivalently, the relative error-bounds (and not the absolute error) which is supremely important in providing us the information regarding the quality of the results/outputs. Another important fact is that inconsistency and/or near-consistency in nature, i.e., in problems created from nature is completely nonexistent while in our modelling of the natural problems we may introduce inconsistency or near-inconsistency due to human error or due to inherent non-removable error associated with any measuring device or due to assumptions introduced to make the problem solvable or more easily solvable in practice. Thus if we discover any inconsistency or possibly any near-inconsistency in a mathematical model, it is certainly due to any or all of the three foregoing factors. We do, however, go ahead to solve such inconsistent/near-consistent problems and do get results that could be useful in real-world situations. The talk considers several deterministic, probabilistic, and heuristic algorithms in numerical optimisation, other numerical and statistical computations, and in PAC (probably approximately correct) learning models. It highlights the quality of the results/outputs through specifying relative error-bounds along with the associated confidence level, and the cost, viz., amount of computations and that of storage through complexity. It points out the limitation in error-free computations (wherever possible, i.e., where the number of arithmetic operations is finite and is known a priori) as well as in the usage of interval arithmetic. Further, the interdependence among the error, the confidence, and the cost is discussed.

A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

Surface-potential-based compact charge models for symmetric double-gate metal-oxide-semiconductor field-effect transistors (SDG-MOSFETs) are based on the fundamental assumption of having equal oxide thicknesses for both gates. However, for practical devices, there will always be some amount of asymmetry between the gate oxide thicknesses due to process variations and uncertainties, which can affect device performance significantly. In this paper, we propose a simple surface-potential-based charge model, which is applicable for tied double-gate MOSFETs having same gate work function but could have any difference in gate oxide thickness. The proposed model utilizes the unique so-far-unexplored quasi-linear relationship between the surface potentials along the channel. In this model, the terminal charges could be computed by basic arithmetic operations from the surface potentials and applied biases, and thus, it could be implemented in any circuit simulator very easily and extendable to short-channel devices. We also propose a simple physics-based perturbation technique by which the surface potentials of an asymmetric device could be obtained just by solving the input voltage equation of SDG devices for small asymmetry cases. The proposed model, which shows excellent agreement with numerical and TCAD simulations, is implemented in a professional circuit simulator through the Verilog-A interface and demonstrated for a 101-stage ring oscillator simulation. It is also shown that the proposed model preserves the source/drain symmetry, which is essential for RF circuit design.

Signal-Powered Low-Drop-Diode Equivalent Circuit for Full-Wave Bridge Rectifier

Piezoelectric-device-based vibration energy harvesting requires a rectifier for conversion of input ac to usable dc form. Power loss due to diode drop in rectifier is a significant fraction of the already low levels of harvested power. The proposed circuit is a low-drop-diode equivalent, which mimics a diode using linear region-operated MOSFET. The proposed diode equivalent is powered directly from input signal and requires no additional power supply for its control. Power used by the control circuit is kept at a bare minimum to have an overall output power improvement. Diode equivalent was used to replace the four diodes in a full-wave bridge rectifier, which is the basic full- wave rectifier and is a part of the more advanced rectifiers like switch-only and bias-flip rectifiers. Simulation in 130-nm technology and experiment with discrete components show that a bridge rectifier with the proposed diode provides a 30-169% increase in output power extracted from piezoelectric device, as compared to a bridge rectifier with diode-connected MOSFETs. The bridge rectifier with the proposed diode can extract 90% of the maximum available power from an ideal piezoelectric device-bridge rectifier circuit. Setting aside the constraint of power loss, simulations indicate that diode drop as low as 10 mV at 38 mu A can be achieved.

Tunable device properties of free-standing inorganic/organic flexible hybrid structures obtained by exfoliation

We report the fabrication of free-standing flexible inorganic/organic hybrid structures by exfoliating ZnO nanostructured films from the flat indium tin oxide (ITO)/silicon/sapphire substrates using poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS). Strong interaction between ZnO and PEDOT: PSS and the thermomechanical response of PEDOT: PSS are the key issues for the exfoliation to prevail. The performance of the free-standing hybrid structures as rectifiers and photodetectors is better as compared to ITO supported hybrid structures. It is also shown that device properties of hybrid structures can be tuned by using different electrode materials. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4729550]

Two-User Gaussian Interference Channel with Finite Constellation Input and FDMA

In the two-user Gaussian Strong Interference Channel (GSIC) with finite constellation inputs, it is known that relative rotation between the constellations of the two users enlarges the Constellation Constrained (CC) capacity region. In this paper, a metric for finding the approximate angle of rotation to maximally enlarge the CC capacity is presented. It is shown that for some portion of the Strong Interference (SI) regime, with Gaussian input alphabets, the FDMA rate curve touches the capacity curve of the GSIC. Even as the Gaussian alphabet FDMA rate curve touches the capacity curve of the GSIC, at high powers, with both the users using the same finite constellation, we show that the CC FDMA rate curve lies strictly inside the CC capacity curve for the constellations BPSK, QPSK, 8-PSK, 16-QAM and 64-QAM. It is known that, with Gaussian input alphabets, the FDMA inner-bound at the optimum sum-rate point is always better than the simultaneous-decoding inner-bound throughout the Weak Interference (WI) regime. For a portion of the WI regime, it is shown that, with identical finite constellation inputs for both the users, the simultaneous-decoding inner-bound enlarged by relative rotation between the constellations can be strictly better than the FDMA inner-bound.

A spring-mass-lever model, stiffness and inertia maps for single-input, single-output compliant mechanisms

A spring-mass-lever (SML) model is introduced in this paper for a single-input-single-output compliant mechanism to capture its static and dynamic behavior. The SML model is a reduced-order model, and its five parameters provide physical insight and quantify the stiffness and inertia(1) at the input and output ports as well as the transformation of force and displacement between the input and output. The model parameters can be determined with reasonable accuracy without performing dynamic or modal analysis. The paper describes two uses of the SML model: computationally efficient analysis of a system of which the compliant mechanism is a part; and design of compliant mechanisms for the given user-specifications. During design, the SML model enables determining the feasible parameter space of user-specified requirements, assessing the suitability of a compliant mechanism to meet the user-specifications and also selecting and/or re-designing compliant mechanisms from an existing database. Manufacturing constraints, material choice, and other practical considerations are incorporated into this methodology. A micromachined accelerometer and a valve mechanism are used as examples to show the effectiveness of the SML model in analysis and design. (C) 2012 Published by Elsevier Ltd.

Device oriented statistical modeling method for process variability in 45nm analog CMOS technology

With the rapid scaling down of the semiconductor process technology, the process variation aware circuit design has become essential today. Several statistical models have been proposed to deal with the process variation. We propose an accurate BSIM model for handling variability in 45nm CMOS technology. The MOSFET is designed to meet the specification of low standby power technology of International Technology Roadmap for Semiconductors (ITRS).The process parameters variation of annealing temperature, oxide thickness, halo dose and title angle of halo implant are considered for the model development. One parameter variation at a time is considered for developing the model. The model validation is done by performance matching with device simulation results and reported error is less than 10%.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

On the capacity of quantized gaussian MAC channels with finite input alphabet

In this paper, we investigate the achievable rate region of Gaussian multiple access channels (MAC) with finite input alphabet and quantized output. With finite input alphabet and an unquantized receiver, the two-user Gaussian MAC rate region was studied. In most high throughput communication systems based on digital signal processing, the analog received signal is quantized using a low precision quantizer. In this paper, we first derive the expressions for the achievable rate region of a two-user Gaussian MAC with finite input alphabet and quantized output. We show that, with finite input alphabet, the achievable rate region with the commonly used uniform receiver quantizer has a significant loss in the rate region compared. It is observed that this degradation is due to the fact that the received analog signal is densely distributed around the origin, and is therefore not efficiently quantized with a uniform quantizer which has equally spaced quantization intervals. It is also observed that the density of the received analog signal around the origin increases with increasing number of users. Hence, the loss in the achievable rate region due to uniform receiver quantization is expected to increase with increasing number of users. We, therefore, propose a novel non-uniform quantizer with finely spaced quantization intervals near the origin. For a two-user Gaussian MAC with a given finite input alphabet and low precision receiver quantization, we show that the proposed non-uniform quantizer has a significantly larger rate region compared to what is achieved with a uniform quantizer.

Computational representations for multi state design tasks and enumeration of mechanical device behaviour

The role of a computer emerged from modeling and analyzing concepts (ideas) to generate concepts. Research into methods for supporting conceptual design using automated synthesis had attracted much attention in the past decades. To find out how designers synthesize solution concepts for multi-state mechanical devices, ten experimental studies were conducted. Observations from these empirical studies would be used as the basis to develop knowledge involved in the multi-state design synthesis process. In this paper, we propose a computational representation for expressing the multi-state design task and for enumerating multi-state behaviors of kinematic pairs and mechanisms. This computational representation would be used to formulate computational methods for the synthesis process to develop a system for supporting design synthesis of multiple state mechanical devices by generating a comprehensive variety of solution alternatives.

A Novel Power Allocation Scheme for Two-User GMAC with Finite Input Constellations

Constellation Constrained (CC) capacity regions of two-user Gaussian Multiple Access Channels (GMAC) have been recently reported, wherein an appropriate angle of rotation between the constellations of the two users is shown to enlarge the CC capacity region. We refer to such a scheme as the Constellation Rotation (CR) scheme. In this paper, we propose a novel scheme called the Constellation Power Allocation (CPA) scheme, wherein the instantaneous transmit power of the two users are varied by maintaining their average power constraints. We show that the CPA scheme offers CC sum capacities equal (at low SNR values) or close (at high SNR values) to those offered by the CR scheme with reduced decoding complexity for QAM constellations. We study the robustness of the CPA scheme for random phase offsets in the channel and unequal average power constraints for the two users. With random phase offsets in the channel, we show that the CC sum capacity offered by the CPA scheme is more than the CR scheme at high SNR values. With unequal average power constraints, we show that the CPA scheme provides maximum gain when the power levels are close, and the advantage diminishes with the increase in the power difference.

Analysis of integrated optofluidic lab-on-a-chip sensor based on refractive index and absorbance sensing

The analysis of a fully integrated optofluidic lab-on-a-chip sensor is presented in this paper. This device is comprised of collinear input and output waveguides that are separated by a microfluidic channel. When light is passed through the analyte contained in the fluidic gap, optical power loss occurs owing to absorption of light. Apart from absorption, a mode-mismatch between the input and output waveguides occurs when the light propagates through the fluidic gap. The degree of mode-mismatch and quantum of optical power loss due to absorption of light by the fluid form the basis of our analysis. This sensor can detect changes in refractive index and changes in concentration of species contained in the analyte. The sensitivity to detect minute changes depends on many parameters. The parameters that influence the sensitivity of the sensor are mode spot size, refractive index of the fluid, molar concentration of the species contained in the analyte, width of the fluidic gap, and waveguide geometry. By correlating various parameters, an optimal fluidic gap distance corresponding to a particular mode spot size that achieves the best sensitivity is determined both for refractive index and absorbance-based sensing.

Ionomer based blend as water vapor barrier material for organic device encapsulation

Blends of poly (ethylene-co-methacrylic acid) (PEMA) and poly (vinyl alcohol-co-ethylene) (EVOH) were studied for encapsulating Schottky structured organic devices. A calcium degradation test was used to determine water vapor transmission rates and to determine the moisture barrier performance of neat and blend films. Moisture barrier analysis for the neat and blend compositions was discussed concerning the interactions in the blend, diffusivity of water molecules through the unit cell systems, and the occupiable free volumes available in the unit cells using molecular dynamics simulations. The experimental results of water vapor permeation were correlated with diffusion behavior predicted from molecular dynamics simulations results. The effectiveness of the blend as a suitable barrier material in increasing the lifetime of an encapsulated Schottky structured organic device was determined.

Decode-and-forward relay beamforming for secrecy with finite-alphabet input

In this letter, we compute the secrecy rate of decode-and-forward (DF) relay beamforming with finite input alphabet of size M. Source and relays operate under a total power constraint. First, we observe that the secrecy rate with finite-alphabet input can go to zero as the total power increases, when we use the source power and the relay weights obtained assuming Gaussian input. This is because the capacity of an eavesdropper can approach the finite-alphabet capacity of 1/2 log(2) M with increasing total power, due to the inability to completely null in the direction of the eavesdropper. We then propose a transmit power control scheme where the optimum source power and relay weights are obtained by carrying out transmit power (source power plus relay power) control on DF with Gaussian input using semi-definite programming, and then obtaining the corresponding source power and relay weights which maximize the secrecy rate for DF with finite-alphabet input. The proposed power control scheme is shown to achieve increasing secrecy rates with increasing total power with a saturation behavior at high total powers.

Multi-resistance states in the electrical switching behavior of amorphous Si15Te75Ge10 thin films: Possibility of multi-bit storage

Electrical switching studies on amorphous Si15Te75Ge10 thin film devices reveal the existence of two distinct, stable low-resistance, SET states, achieved by varying the electrical input to the device. The multiple resistance levels can be attributed to multi-stage crystallization, as observed from temperature dependant resistance studies. The devices are tested for their ability to be RESET with minimal resistance degradation; further, they exhibit a minimal drift in the SET resistance value even after several months of switching. (c) 2013 Elsevier B.V. All rights reserved.