Synthesis of self-light-scattering wrinkle structured ZnO photoanode by sol-gel method for dye-sensitized solar cells

A special morphological zinc oxide (ZnO) photoanode for dye-sensitized solar cell was fabricated by simple sol-gel drop casting technique. This film shows a wrinkled structure resembling the roots of banyan tree, which acts as an effective self scattering layer for harvesting more visible light and offers an easy transport path for photo-injected electrons. These ZnO electrode of low thickness (similar to 5 mu m) gained an enhanced short-circuit current density of 6.15 mA/cm(2), open-circuit voltage of 0.67 V, fill factor of 0.47 and overall conversion efficiency of 1.97 % under 1 sun illumination. This shows a high conversion efficiency and a superior performance than that of ZnO nanoparticle-based photoanode (eta similar to 1.13 %) of high thickness (similar to 8 mu m).

Eco-friendly green synthesis, structural and photoluminescent studies of CeO2:Eu3+ nanophosphors using E. tirucalli plant latex

The investigation involves preparation and photoluminescence properties of CeO2:Eu3+ (1-11 mol%) nano phosphors by eco-friendly green combustion route using Euphorbia tirucalli plant latex as fuel. The final product was characterized by powder X-ray diffraction (PXRD), Scanning electron microcopy (SEM) and Transmission electron microscopy (TEM). The PXRD and SEM results reveals cubic fluorite phase with flaky structure. The crystallite size obtained from TEM was found to be similar to 20-25 nm, which was comparable to W-H plots and Scherrer's method. Photoluminescence (PL) emission of all the Eu3+ doped samples shows characteristic bands arising from the transitions of D-5(0) -> F-5(J) (J = 0, 1, 2, 3, 4) manifolds under excitation at 373 and 467 nm excitation. The D-5(0) -> F-7(2) (613 nm) transition often dominate the emission spectra, indicating that the Eu3+ cations occupy a site without inversion center. The highest PL intensity was recorded for 9 mol% Eu3+ ions with 5 ml latex. PL quenching was observed upon further increase in Eu3+ concentration. The international commission on illumination (CIE) chromaticity co-ordinates were calculated from emission spectra, the values (x, y) were very close to national television system committee (NTSC) standard values of pure red emission. The results demonstrate that the synthesized phosphor material could be very useful for display applications. Further, the phosphor material prepared by this method was found to be non toxic, environmental friendly and could be a potential alternative to economical routes. (C) 2014 Elsevier B.V. All rights reserved.

Solution Processed Cu2CoSnS4 Thin Films for Photovoltaic Applications

Earth abundant alternative chalcopyrite Cu2CoSnS4 (CCTS) thin films were deposited by a facile sol-gel process onto larger substrates. Temperature dependence of the process control of deposition and desired phase formations was studied in detail. Films were analyzed for complete transformation from amorphous to polycrystalline, with textured structures for stannite phase, as reflected from the X-ray diffraction and with nearly stoichiometric compositions of Cu:Co:Sn:S = 2:0:1:0:1:0:4:0 from EDAX analysis. Morphological investigations revealed that the CCTS films with larger grains, on the order of its thickness, were synthesized at higher temperature of 500 degrees C. The optimal band gap for application in photovoltaics was estimated to be 1.4 eV. Devices with SLG/CCTS/Al geometry were fabricated for real time demonstration of photoconductivity under A.M 1.5 G solar and 1064 rim infrared laser illuminations. A photodetector showed one order current amplification from similar to 1.9 X 10(-6) A in the dark to 2.2 x 10(-5) A and 9.8 X 10(-6) A under A.M 1.5 G illumination and 50 mW cm(-2) IR laser, respectively. Detector sensitivity, responsivity, external quantum efficiency, and gain were estimated as 4.2, 0.12 A/W, 14.74% and 14.77%, respectively, at 50 mW cm(-2) laser illuminations. An ON and OFF ratio of 2.5 proved that CCTS can be considered as a potential absorber in low cost photovoltaics applications.

Tailoring the Cu(In, Al)S-2 nanostructures for photonic applications

Solvent dependent and low temperature based Chalcopyrite CuIn1-xAlxS2 (CIAS) nano structures were synthesized by a simple one-pot solvothermal route. X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy and micro-Raman spectroscopy were used to characterize the nanostructures structurally and optically. CIAS hollow spheres were constructed from the nanoplates. Detailed formation mechanism of the hollow spheres was explained. Tentative optical phonon vibrational modes have been discussed. Steady state room temperature IR photodectection have been demonstrated with all the CIAS nanostructures under IR lamp illumination. Photo current was amplified by two orders and one order in case of nano needle like structures and hollow spheres respectively, which was explained based upon the trap assisted space charge. Growth and decay constants lasted for few milli seconds.

Combustion synthesized tetragonal ZrO2: Eu3+ nanophosphors: Structural and photoluminescence studies

Novel crystalline tetragonal ZrO2: Eu3+ phosphors were prepared by a facile and efficient low temperature solution combustion method at 400 +/- 10 degrees C using oxalyl dihydrazide (ODH) as fuel. The powder X-ray diffraction patterns and Rietveld confinement of as formed ZrO2: Eu3+ (1-11 mol%) confirmed the presence of body centered tetragonal phase. The crystallite size estimated from Scherrer's and W-H plots was found to be in the range of 7-17 nm. These results were in good agreement with transmission electron microscopy studies. The calculated microstrain in most of the planes indicated the presence of tensile stress along various planes of the particles. The observed space group (P4(2)/nmc) revealed the presence of cations in the 2b positions (0.75, 0.25, 0.25) and the anions in the 4d positions (0.25, 0.25, 0.45). The optical band gap energies estimated from Wood and Tauc's relation was found to be in the range 4.3-4.7 eV. Photoluminescence (PL) emission was recorded under 394 and 464 nm excitation shows an intense emission peak at 605 nm along with other emission peaks at 537, 592, 605 and 713 nm. These emission peaks were attributed to the transition of D-5(0) -> F-7(J) (J = 0, 1, 2, 3) of Eu3+ ions. The high ratio of Intensity of (D-5(0) -> F-7(2)) and (D-5(0) -> F-7(1)) infers that Eu3+ occupies sites with a low symmetry and without an inversion center. CIE color coordinates indicated the red regions which could meet the needs of illumination devices. (C) 2014 Elsevier B.V. All rights reserved.

Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy

We hereby report the development of non-polar epi-GaN films of usable quality, on an m-plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode. However, we could achieve good quality epi-GaN films by involving controlled steps of nitridation. GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. The films grown on the nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. Room temperature photoluminescence study showed that nonpolar GaN films have higher value of compressive strain as compared to semipolar GaN films, which was further confirmed by room temperature Raman spectroscopy. The room temperature UV photodetection of both films was investigated by measuring the I-V characteristics under UV light illumination. UV photodetectors fabricated on nonpolar GaN showed better characteristics, including higher external quantum efficiency, compared to photodetectors fabricated on semipolar GaN. X-ray rocking curves confirmed better crystallinity of semipolar as compared to nonpolar GaN which resulted in faster transit response of the device. (C) 2014 AIP Publishing LLC.

Scheelite-type MWO4 (M = Ca, Sr, and Ba) nanophosphors: Facile synthesis, structural characterization, photoluminescence, and photocatalytic properties

Scheelite-type MWO4 (M = Ca, Sr, and Ba) nanophosphors were synthesized by the precipitation method. All compounds crystallized in the tetragonal structure with space group 141/a (No. 88). Scherrer's and TEM results revealed that the average crystallite size varies from 32 to 55 nm. FE-SEM illustrate the spherical (CaWO4), bouquet (SrWO4), and fish (BaWO4) like morphologies. PL spectra indicate the broad emission peak maximum at 436 (CaWO4), 440 (SrWO4), and 433 nm (BaWO4) under UV excitation. The calculated CIE color coordinates of MWO4 nanophosphors are close to the commercial BAM and National Television System Committee blue phosphor. The photocatalytic activities of MWO4 were investigated for the degradation of methylene blue dye under UV illumination. At pH 3, BaWO4 nanocatalyst showed 100% dye degradation within 60 min. The photocatalytic activity was in the decreasing order of BaWO4> CaWO4>SrWO4 under both neutral and acidic conditions. (C) 2014 Elsevier Ltd. All rights reserved.

Facile synthesis of PbWO4: Applications in photoluminescence and photocatalytic degradation of organic dyes under visible light

Stolzite polymorph of PbWO4 catalyst was prepared by the facile room temperature precipitation method. Structural parameters were refined by the Rietveld analysis using powder X-ray data. PbWO4 was crystallized in the scheelite-type tetragonal structure with space group I4(1)/a (No. 88). Field emission scanning electron microscopy revealed leaf like morphology. Photoluminescence spectra exhibit broad blue emission (425 nm) under the excitation of 356 nm. The photocatalytic degradation of Methylene blue, Rhodamine B and Methyl orange dyes were measured under visible illumination. The 100% dye degradation was observed for MB and RhB dyes within 60 and 105 min. The rate constant was found to be in the decreasing order of MB > RhB > MO which followed the 1st order kinetic mechanism. Therefore, PbWO4 can be a potential candidate for blue component in white LEDs and also acts as a catalyst for the treatment of toxic and non-biodegradable organic pollutants in water. (C) 2014 Elsevier B.V. All rights reserved.

Robust tracking with interest points: A sparse representation approach

Visual tracking is an important task in various computer vision applications including visual surveillance, human computer interaction, event detection, video indexing and retrieval. Recent state of the art sparse representation (SR) based trackers show better robustness than many of the other existing trackers. One of the issues with these SR trackers is low execution speed. The particle filter framework is one of the major aspects responsible for slow execution, and is common to most of the existing SR trackers. In this paper,(1) we propose a robust interest point based tracker in l(1) minimization framework that runs at real-time with performance comparable to the state of the art trackers. In the proposed tracker, the target dictionary is obtained from the patches around target interest points. Next, the interest points from the candidate window of the current frame are obtained. The correspondence between target and candidate points is obtained via solving the proposed l(1) minimization problem. In order to prune the noisy matches, a robust matching criterion is proposed, where only the reliable candidate points that mutually match with target and candidate dictionary elements are considered for tracking. The object is localized by measuring the displacement of these interest points. The reliable candidate patches are used for updating the target dictionary. The performance and accuracy of the proposed tracker is benchmarked with several complex video sequences. The tracker is found to be considerably fast as compared to the reported state of the art trackers. The proposed tracker is further evaluated for various local patch sizes, number of interest points and regularization parameters. The performance of the tracker for various challenges including illumination change, occlusion, and background clutter has been quantified with a benchmark dataset containing 50 videos. (C) 2014 Elsevier B.V. All rights reserved.

B-Spline potential function for maximum a-posteriori image reconstruction in fluorescence microscopy

An iterative image reconstruction technique employing B-Spline potential function in a Bayesian framework is proposed for fluorescence microscopy images. B-splines are piecewise polynomials with smooth transition, compact support and are the shortest polynomial splines. Incorporation of the B-spline potential function in the maximum-a-posteriori reconstruction technique resulted in improved contrast, enhanced resolution and substantial background reduction. The proposed technique is validated on simulated data as well as on the images acquired from fluorescence microscopes (widefield, confocal laser scanning fluorescence and super-resolution 4Pi microscopy). A comparative study of the proposed technique with the state-of-art maximum likelihood (ML) and maximum-a-posteriori (MAP) with quadratic potential function shows its superiority over the others. B-Spline MAP technique can find applications in several imaging modalities of fluorescence microscopy like selective plane illumination microscopy, localization microscopy and STED. (C) 2015 Author(s).

Few-layer graphene/ZnO nanowires based high performance UV photodetector

A graphene and zinc oxide nanowires (G/ZnO NWs) based ultraviolet (UV) photodetector presents excellent responsivity and photocurrent gain with detectivity. Graphene due to higher charge carrier transport mobility induces faster response to UV illumination at the interface between ZnO and graphene with improved response and decay times as compared to a ZnO NWs device alone. A linear increase is revealed for both the responsivity and photocurrent gain of the G/ZnO NWs device with the applied bias. These results suggest that the G/ZnO NWs device exhibits great promise for highly efficient UV photodetectors.

Highly Dense ZnO Nanowires Grown on Graphene Foam for Ultraviolet Photodetection

Growth of highly dense ZnO nanowires (ZnO NWs) is demonstrated on three-dimensional graphene foam (GF) using resistive thermal evaporation technique. Photoresponse of the as-grown hybrid structure of ZnO NWs on GF (ZnO NWs/GF) is evaluated for ultraviolet (UV) detection. Excellent photoresponse with fast response and recovery times of 9.5 and 38 s with external quantum efficiency of 2490.8% is demonstrated at low illumination power density of 1.3 mW/cm(2). In addition, due to excellent charge carrier transport, mobility of graphene reduces the recombination rate of photogenerated charge carriers, hence the lifetime of photogenerated free charge carriers enhances in the photodetectors.

Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

Temperature and photo-dependent current-voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT: PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler-Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (similar to 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Phi(B) approximate to 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed. (C) 2015 AIP Publishing LLC.

Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias

n-n isotype heterojunction of InGaN and bare Si (111) was formed by plasma assisted molecular beam epitaxy without nitridation steps or buffer layers. High resolution X-ray diffraction studies were carried out to confirm the formation of epilayers on Si (111). X-ray rocking curves revealed the presence of large number of edge threading dislocations at the interface. Room temperature photoluminescence studies were carried out to confirm the bandgap and the presence of defects. Temperature dependent I-V measurements of Al/InGaN/Si (111)/Al taken in dark confirm the rectifying nature of the device. I-V characteristics under UV illumination, showed modest rectification and was operated at zero bias making it a self-powered device. A band diagram of the heterojunction is proposed to understand the transport mechanism for self-powered functioning of the device. (c) 2015 AIP Publishing LLC.

Compressed domain human action recognition in H.264/AVC video streams

This paper discusses a novel high-speed approach for human action recognition in H.264/AVC compressed domain. The proposed algorithm utilizes cues from quantization parameters and motion vectors extracted from the compressed video sequence for feature extraction and further classification using Support Vector Machines (SVM). The ultimate goal of the proposed work is to portray a much faster algorithm than pixel domain counterparts, with comparable accuracy, utilizing only the sparse information from compressed video. Partial decoding rules out the complexity of full decoding, and minimizes computational load and memory usage, which can result in reduced hardware utilization and faster recognition results. The proposed approach can handle illumination changes, scale, and appearance variations, and is robust to outdoor as well as indoor testing scenarios. We have evaluated the performance of the proposed method on two benchmark action datasets and achieved more than 85 % accuracy. The proposed algorithm classifies actions with speed (> 2,000 fps) approximately 100 times faster than existing state-of-the-art pixel-domain algorithms.