Plane wave analysis of rectangular axial-inlet, axial-outlet and transverse-inlet, transverse-outlet air cleaners

In this work, one-dimensional flow-acoustic analysis of two basic configurations of air cleaners, (i) Rectangular Axial-Inlet, Axial-Outlet (RAIAO) and (ii) Rectangular Transverse-Inlet, Transverse-Outlet (RTITO), has been presented. This 1-D analytical approach has been verified with the help of 3-D FEM based software. Through subtraction of the acoustic performance of the bare plenum (without filter element) from that of the complete air cleaner box, the solitary performance of the filter element has been evaluated. Part of the present analysis illustrates that the analytical formulation remains effective even with offset positioning of the air pipes from the centre of the cross section of the air cleaner. The 1-D analytical tool computes much faster than its 3-D simulation counterpart. The present analysis not only predicts the acoustical impact of mean flow, but it also depicts the scenario with increased resistance of the filter element. Thus, the proposed 1-D analysis would help in the design of acoustically efficient air cleaners for automotive applications. (C) 2011 Institute of Noise Control Engineering.

The pursuit-evasion problem of two aircraft in a horizontal plane

The pursuit-evasion problem of two aircraft in a horizontal plane is modelled as a zerosum differential game with capture time as payoff. The aircraft are modelled as point masses with thrust and bank angle controls. The games of kind and degree for this differential game are solved.

The x¿n-x Plane for Analysis of Certain Second-Order Nonlinear Systems

Analysis of certain second-order nonlinear systems, not easily amenable to the phase-plane methods, and described by either of the following differential equations xÿn-2ÿ+ f(x)xÿ2n+g(x)xÿn+h(x)=0 ÿ+f(x)xÿn+h(x)=0 n≫0 can be effected easily by drawing the entire portrait of trajectories on a new plane; that is, on one of the xÿnÿx planes. Simple equations are given to evaluate time from a trajectory on any of these n planes. Poincaré's fundamental phase plane xÿÿx is conceived of as the simplest case of the general xÿnÿx plane.

Phase-plane techniques for the solution of transient-stability problems

The paper presents a graphical-numerical method for determining the transient stability limits of a two-machine system under the usual assumptions of constant input, no damping and constant voltage behind transient reactance. The method presented is based on the phase-plane criterion,1, 2 in contrast to the usual step-by-step and equal-area methods. For the transient stability limit of a two-machine system, under the assumptions stated, the sum of the kinetic energy and the potential energy, at the instant of fault clearing, should just be equal to the maximum value of the potential energy which the machines can accommodate with the fault cleared. The assumption of constant voltage behind transient reactance is then discarded in favour of the more accurate assumption of constant field flux linkages. Finally, the method is extended to include the effect of field decrement and damping. A number of examples corresponding to each case are worked out, and the results obtained by the proposed method are compared with those obtained by the usual methods.

Approximate synthesis formulas for microstrip line with aperture in ground plane

Approximate closed-form expressions for the propagation characteristics of a microstrip line with a symmetrical aperture in its ground plane are reported in this article. Well-known expressions for the characteristic impedance of a regular microstrip line have been modified to incorporate the effect of this aperture. The accuracy of these expressions for various values of substrate thickness, permittivity and line width has been studied in detail by fullwave simulations. This has been further verified by measurements. These expressions are easier to compute and find immense use in the design of broadband filters, tight couplers, power dividers, transformers, delay lines, and matching circuits. A broadband filter with aperture in ground plane is demonstrated in this article. (c) 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.

Effect of base dissipation on the granular flow down an inclined plane

The effect of base dissipation on the granular flow down an inclined plane is examined by altering the coefficient of restitution between the moving and base particles in discrete element (DE) simulations. The interaction laws between two moving particles are kept fixed, and the coefficient of restitution (damping constant in the DE simulations) between the base and moving particles are altered to reduce dissipation, and inject energy from the base. The energy injection does result in an increase in the strain rate by up to an order of magnitude, and the temperature by up to two orders of magnitude at the base. However, the volume fraction, strain rate and temperature profiles in the bulk (above about 15 particle diameters from the base) are altered very little by the energy injection at the base. We also examine the variation of h(stop), the minimum height at the cessation of flow, with energy injection from the base. It is found that at a fixed angle of inclination, h(stop) decreases as the energy dissipation at the base decreases.

Transition due to base roughness in a dense granular flow down an inclined plane

Particle simulations based on the discrete element method are used to examine the effect of base roughness on the granular flow down an inclined plane. The base is composed of a random configuration of fixed particles, and the base roughness is decreased by decreasing the ratio of diameters of the base and moving particles. A discontinuous transition from a disordered to an ordered flow state is observed when the ratio of diameters of base and moving particles is decreased below a critical value. The ordered flowing state consists of hexagonally close packed layers of particles sliding over each other. The ordered state is denser (higher volume fraction) and has a lower coordination number than the disordered state, and there are discontinuous changes in both the volume fraction and the coordination number at transition. The Bagnold law, which states that the stress is proportional to the square of the strain rate, is valid in both states. However, the Bagnold coefficients in the ordered flowing state are lower, by more than two orders of magnitude, in comparison to those of the disordered state. The critical ratio of base and moving particle diameters is independent of the angle of inclination, and varies very little when the height of the flowing layer is doubled from about 35 to about 70 particle diameters. While flow in the disordered state ceases when the angle of inclination decreases below 20 degrees, there is flow in the ordered state at lower angles of inclination upto 14 degrees. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4710543]

Current transport in nonpolar a-plane InN/GaN eterostructures Schottky junction

The temperature dependent current transport properties of nonpolar a-plane (11 2 0) InN/GaN heterostructure Schottky junction were investigated. The barrier height ( b) and ideally factor (η) estimated from the thermionic emission (TE) model were found to be temperature dependent in nature. The conventional Richardson plot of the ln(I s/T 2) versus 1/kT has two regions: the first region (150-300 K) and the second region (350-500 K). The values of Richardson constant (A +) obtained from this plot are found to be lower than the theoretical value of n-type GaN. The variation in the barrier heights was explained by a double Gaussian distribution with mean barrier height values ( b ) of 1.17 and 0.69 eV with standard deviation (� s) of 0.17 and 0.098 V, respectively. The modified Richardson plot in the temperature range 350-500 K gives the Richardson constant which is close to the theoretical value of n-type GaN. Hence, the current mechanism is explained by TE by assuming the Gaussian distribution of barrier height. At low temperature 150-300 K, the absence of temperature dependent tunneling parameters indicates the tunneling assisted current transport mechanism. © 2012 American Institute of Physics.

PIV study on the dimple mid-plane of a narrow rectangular channel with dimples applied to one wall

This paper presents an investigation of the fluid flow in the fully developed portion of a rectangular channel (Aspect Ratio of 2) with dimples applied to one wall at channel Reynolds numbers of 20,000, 30,000, and 40,000. The dimples are applied in a staggered-row, racetrack configuration. Results for three different dimple geometries are presented: a large dimple, small dimple, and double dimple. Heat transfer and aerodynamic results from preceding works are presented in Nusselt number and friction factor augmentation plots as determined experimentally. Using particle image velocimetry, the region near the dimple feature is studied in detail in the location of the entrainment and ejection of vortical packets into and out of the dimple; the downstream wake region behind each dimple is also studied to examine the effects of the local flow phenomenon that result in improved heat transfer in the areas of the channel wall not occupied by a feature. The focus of the paper is to examine the secondary flows in these dimpled channels in order to support the previously presented heat transfer trends. The flow visualization is also intended to improve the understanding of the flow disturbances in a dimpled channel; a better understanding of these effects would lead the development of more effective channel cooling designs. Copyright © 2011 by ASME.

Perturbative expansion of the QCD Adler function improved by renormalization-group summation and analytic continuation in the Borel plane

We examine the large-order behavior of a recently proposed renormalization-group-improved expansion of the Adler function in perturbative QCD, which sums in an analytically closed form the leading logarithms accessible from renormalization-group invariance. The expansion is first written as an effective series in powers of the one-loop coupling, and its leading singularities in the Borel plane are shown to be identical to those of the standard ``contour-improved'' expansion. Applying the technique of conformal mappings for the analytic continuation in the Borel plane, we define a class of improved expansions, which implement both the renormalization-group invariance and the knowledge about the large-order behavior of the series. Detailed numerical studies of specific models for the Adler function indicate that the new expansions have remarkable convergence properties up to high orders. Using these expansions for the determination of the strong coupling from the hadronic width of the tau lepton we obtain, with a conservative estimate of the uncertainty due to the nonperturbative corrections, alpha(s)(M-tau(2)) = 0.3189(-0.0151)(+0.0173), which translates to alpha(s)(M-Z(2)) = 0.1184(-0.0018)(+0.0021). DOI: 10.1103/PhysRevD.87.014008

Molecular beam epitaxial growth of (11-22) GaN on m-plane sapphire

The structural and optical properties of semipolar (1 1 -2 2) GaN grown on m-plane (1 0 -1 0) sapphire substrates by molecular beam epitaxy were investigated. An in-plane orientation relationship was found to be 1 -1 0 0] GaN parallel to 1 2-1 0] sapphire and -1 -1 2 3] GaN parallel to 0 0 0 1] sapphire for semipolar GaN on m-plane sapphire substrates. The near band emission (NBE) was found at 3.432 eV, which is slightly blue shifted compared to the bulk GaN. The Raman E-2 (high) peak position observed at 569.1 cm(-1), which indicates that film is compressively strained. Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/semipolar GaN Schottky diode found to be 0.55 eV and 2.11, respectively obtained from the TE model.

Analysis of multi-conductor coupled microstrip lines with an aperture in the ground plane for the design of a broadband filter

Closed-form expressions for the propagation characteristics of coupled microstrip lines with a symmetrical aperture in the ground plane are derived. Expressions for the regular microstrip coupled lines have been modified using physical insights to incorporate the effect of the aperture. The accuracy of these expressions has been verified by full-wave simulations and compared with conformal mapping analysis. These expressions are accurate within 5% for a substrate whose thickness varies from 0.2 to 1.6mm and permittivity in the range of 210. Designing a broadband filter based on planar multi-conductor coupled lines with aperture in the ground plane is demonstrated in this paper using the proposed expressions for its practical use.

The effect of base roughness on the development of a dense granular flow down an inclined plane

The development of the flow of a granular material down an inclined plane starting from rest is studied as a function of the base roughness. In the simulations, the particles are rough frictional spheres interacting via the Hertz contact law. The rough base is made of a random configuration of fixed spheres with diameter different from the flowing particles, and the base roughness is decreased by decreasing the diameter of the base particles. The transition from an ordered to a disordered flowing state at a critical value of the base particle diameter, first reported by Kumaran and Maheshwari Phys. Fluids 24, 053302 (2012)] for particles with the linear contact model, is observed for the Hertzian contact model as well. The flow development for the ordered and disordered flows is very different. During the development of the disordered flow for the rougher base, there is shearing throughout the height. During the development of the ordered flow for the smoother base, there is a shear layer at the bottom and a plug region with no internal shearing above. In the shear layer, the particles are layered and hexagonally ordered in the plane parallel to the base, and the velocity profile is well approximated by Bagnold law. The flow develops in two phases. In the first phase, the thickness of the shear layer and the maximum velocity increase linearly in time till the shear front reaches the top. In the second phase, after the shear layer encompasses the entire flow, there is a much slower increase in the maximum velocity until the steady state is reached. (C) 2013 AIP Publishing LLC.

Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy

The growth of nonpolar a- plane (1 1 -2 0) orientation of the GaN epilayers were confirmed by high resolution x-ray diffraction studies. An in-plane orientation relationship was found to be 0 0 0 1] GaN parallel to -1 1 0 1] sapphire and -1 1 0 0] GaN parallel to 1 1 -2 0] sapphire. SEM image shows the reasonably smooth surface. The photoluminescence spectrum shows near band emission (NBE) at 3.439 eV. The room temperature I-V characteristics of Au/a-GaN schottky diode performed. The Schottky barrier height (phi(b)) and the ideality factor (eta) for the Au/a-GaN schottky diode found to be 0.50 eV and 2.01 respectively.