Zinc-substituted alpha-nickel hydroxide as an electrode material for alkaline secondary cells

Double hydroxides of the formula, Ni1-xZn2x (OH)(2) (CO3)(x). nH(2)O (x = 0.1 to 0.25) having the same structure as that of alpha-nickel hydroxide have been synthesized by partial substitution of zinc for nickel. The hydroxide having the composition x = 0.25 exhibits prolonged stability in 6 M KOH. Pasted electrodes comprising this material are rechargeable with a stabilized reversible discharge capacity of 410 +/- 15 mAh g(-1) of nickel even under suboptimal conditions of electrode fabrication. This compares favorably with the capacity values achieved for beta-nickel hydroxide (221 mAh g(-1)', This work; 297 mAh g(-1), Delahaye-Vidal and Figlarz;(1) 456 mAh g(-1), theoretical). (C) 1999 The Electrochemical Society. S0013-4651(98)01-071-4. All rights reserved.

Lithium borate-strontium bismuth tantalate glass nanocomposite: a novel material for nonlinear optic and ferroelectric applications

Glass nanocomposites in the system (100 - x)Li2B4O7-xSrBi(2)Ta(2)O(9) (0 less than or equal to x less than or equal to 22.5, in molar ratio) were fabricated via a melt quenching technique followed by controlled heat-treatment. The as-quenched samples were confirmed to be glassy and amorphous by differential thermal analysis (DTA) and X-ray powder diffraction (XRD) techniques, respectively. The phase formation and crystallite size of the heat-treated samples (glass nanocomposites) were monitored by XRD and transmission electron microscopy (TEM). The relative permittivities (epsilon(tau)') of the glass nanocomposites for different compositions were found to lie in between that of the parent host glass (Li2B4O7) and strontium bismuth tantalate (SBT) ceramic in the frequency range 100 Hz-40 MHz at 300 K, whereas the dielectric loss (D) of the glass nanocomposite was less than that of both the parent phases. Among the various dielectric models employed to predict the effective relative permittivity of the glass nanocomposite, the one obtained using the Maxwell's model was in good agreement with the experimentally observed value. Impedance analysis was employed to rationalize the electrical behavior of the glasses and glass nanocomposites. The pyroelectric response of the glasses and glass nanocomposites was monitored as a function of temperature and the pyroelectric coefficient for glass and glass nanocomposite (x = 20) at 300 K were 27 muC m(-2) K-1 and 53 muC m(-2) K-1, respectively. The ferroelectric behavior of these glass nanocomposites was established by P vs. E hysteresis loop studies. The remnant polarization (P-r) of the glass nanocomposite increases with increase in SBT content. The coercive field (E-c) and P-r for the glass nanocomposite (x = 20) were 727 V cm(-1) and 0.527 muC cm(-2), respectively. The optical transmission properties of these glass nanocomposites were found to be composition dependent. The refractive index (n = 1.722), optical polarizability (am = 1.266 6 10 23 cm 3) and third-order nonlinear optical susceptibility (x(3) = 3.046 6 10(-21) cm(3)) of the glass nanocomposite (x = 15) were larger than those of the as-quenched glass. Second harmonic generation (SHG) was observed in transparent glass nanocomposites and the d(eff) for the glass nanocomposite (x = 20) was found to be 0.373 pm V-1.

Optimization of off-oriented Ge substrates for MOVPE-grown GaAs solar cells

GaAs/Ge heterostructures having abrupt interfaces were grown on 2degrees, 6degrees, and 9degrees off-cut Ge substrates and investigated by cross-sectional high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy, photoluminescence spectroscopy and electrochemical capacitance voltage (ECV) profiler. The GaAs films were grown on off-oriented Ge substrates with growth temperature in the range of 600-700degreesC, growth rate of 3-12 mum/hr and a V/III ratio of 29-88. The lattice indexing of HRTEM exhibits an excellent lattice line matching between GaAs and Ge substrate. The PL spectra from GaAs layer on 6degrees off-cut Ge substrate shows the higher excitonic peak compared with 2degrees and 9degrees off-cut Ge substrates. In addition, the luminescence intensity from the GaAs solar cell grown on 6degrees off-cut is higher than on 9degrees off-cut Ge substrates and signifies the potential use of 6degrees off-cut Ge substrate in the GaAs solar cells industry. The ECV profiling shows an abrupt film/substrate interface as well as between various layers of the solar cell structures.

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.

Studies on compressive failure features in syntactic foam material

Syntactic foam made by mechanical mixing of glass hollow spheres in epoxy resin matrix is characterized for compressive properties in the present study. Volume fraction of hollow spheres in the syntactic foam under investigation is kept at 67.8%. Effect of specimen aspect ratio on failure behavior and stress-strain curve of the material is highlighted. Considerable differences are noted in the macroscopic fracture features of the specimen and the stress-strain curve with the variation in specimen aspect ratio, although compressive yield strength values were within a narrow range. Post compression test scanning electron microscopic observations coupled with the macroscopic observations taken during the test helped in explaining the deviation in specimen behavior and in gathering support for the proposed arguments.

Wear of metals: a consequence of stable/unstable material response

Wear of metals in dry sliding is dictated by the material response to traction. This is demonstrated by considering the wear of aluminium and titanium alloys. In a regime of stable homogeneous deformation the material approaching the surface from the bulk passes through microprocessing zones of flow, fracture, comminution and compaction to generate a protective tribofilm that retains the interaction in the mild wear regime. If the response leads to microstructural instabilities such as adiabatic shear bands, the near-surface zone consists of stacks of 500 nm layers situated parallel to the sliding direction. Microcracks are generated below the surface to propagate normally away from the surface though microvoids situated in the layers, until it reaches a depth of 10-20 mum. A rectangular laminate debris consisting of a 20-40 layer stack is produced, The wear in this mode is severe.

Wear of metals-influence of some primary material properties

Specific wear rates of a range of metals and alloys upon dry sliding are compiled together to discern the influence of material properties on wear. No systematic influence of bulk hardness was found. Following our previous work on the influence of power dissipative capacity of metals on wear, we explore the influence of thermal diffusivity on wear of these metals.

Analytical solutions for heat transfer during cyclic melting and freezing of a phase change material used in electronic or electrical packaging

In this paper we develop an analytical heat transfer model, which is capable of analyzing cyclic melting and solidification processes of a phase change material used in the context of electronics cooling systems. The model is essentially based on conduction heat transfer, with treatments for convection and radiation embedded inside. The whole solution domain is first divided into two main sub-domains, namely, the melting sub-domain and the solidification sub-domain. Each sub-domain is then analyzed for a number of temporal regimes. Accordingly, analytical solutions for temperature distribution within each subdomain are formulated either using a semi-infinity consideration, or employing a method of quasi-steady state, depending on the applicability. The solution modules are subsequently united, leading to a closed-form solution for the entire problem. The analytical solutions are then compared with experimental and numerical solutions for a benchmark problem quoted in the literature, and excellent agreements can be observed.

Growth and Characterization of GaAs Epitaxial Layers by MOCVD

technique, on both semi-insulating and semi-conducting CraAs substrates with (100) orientation, offset by 2° towards (110) direction. Systematic variation of As/Ga was performed to gain an understanding of growth process, type of formation and other related physical properties. The films were characterized by using the variety of techniques, such as SEM, EDAX, HRTEM, XRD, and PL. Optical and electrical properties of undoped CyaAs epilayers are presented with reference to the growth conditions and AsH3/TMGa ratio. Photoluminescence measurements of GaAs epilayers were recorded at 4.2K and shows the emission of free exciton and confirmed their high purity. The dominant residual impurities in GaAs are presented by using PL. Finally, electrochemical depth profiling exhibited almost homogeneous background carrier distribution and excellent abruptness between the thin GaAs epilayer and substrate.

Anomalous Temperature dependence of Fermi-edge Singularity in Modulation-doped AlGaAs/InGaAs/GaAs hetero-structures

The temperature and power dependence of Fermi-edge singularity (FES) in high-density two-dimensional electron gas, specific to pseudomorphic AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures is studied by photoluminescence (PL). In all these structures, there are two prominent transitions E11 and E21 considered to be the result of electron-hole recombination from first and second electron sub-bands with that of first heavy-hole sub-band. FES is observed approximately 5 -10 meV below the E21 transition. At 4.2 K, FES appears as a lower energy shoulder to the E21 transition. The PL intensity of all the three transitions E11, FES and E21 grows linearly with excitation power. However, we observe anomalous behavior of FES with temperature. While PL intensity of E11 and E21 decrease with increasing temperature, FES transition becomes stronger initially and then quenches-off slowly (till 40K). Though it appears as a distinct peak at about 20 K, its maximum is around 7 - 13 K.

Geotechnical Characterization of Some Indian Bentonites for their Use as Buffer Material in Geological Repository

The present study examines the geotechnical properties of Indian bentonite clays for their suitability as buffer material in deep geological repository for high-level nuclear wastes. The bentonite samples are characterized for index properties, compaction, hydraulic conductivity and swelling characteristics. Evaluation of geotechnical properties of the compacted bentonite-sand admixtures, from parts of NW India reveals swelling potentials and hydraulic conductivities in the range of 55 % - 108 % and 1.2 X 10 –10 cm/s to 5.42x 10 –11 cm/s respectively. Strong correlation was observed between ESP (exchangeable sodium percentage) and liquid limit/swell potential of tested specimens. Relatively less well-defined trends emerged between ESP and swell pressure/hydraulic conductivity. The Barmer-1 bentonite despite possessing relatively lower montmorillonite content of 68 %, developed higher Atterberg limit and swell potential, and exhibited comparable swelling pressure and hydraulic conductivity as other bentonites with higher montmorillonite contents (82 to 86 %). The desirable geotechnical properties of Barmer clay as a buffer material is attributed to its large ESP (63 %) and, EMDD (1.17 Mg/m3) attained at the experimental compactive stress(5 MPa).

Influence of the highest occupied molecular orbital energy level of the donor material on the effectiveness of the anode buffer layer in organic solar cells

Efficiency of organic photovoltaic cells based on organic electron donor/organic electron acceptor junctions can be strongly improved when the transparent conductive Anode is coated with a Buffer Layer (ABL). Here, the effects of a metal (gold) or oxide (molybdenum oxide) ABL are reported, as a function of the Highest Occupied Molecular Orbital (HOMO) of different electron donors. The results indicate that a good matching between the work function of the anode and the highest occupied molecular orbital of the donor material is the major factor limiting the hole transfer efficiency. Indeed, gold is efficient as ABL only when the HOMO of the organic donor is close to its work function Phi(Au). Therefore we show that the MoO(3) oxide has a wider field of application as ABL than gold. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim