Improved mechanical properties of polymer nanocomposites incorporating graphene-like BN: Dependence on the number of BN layers

The mechanical properties of composites of polymethylmethacrylate (PMMA) with two-dimensional graphene-like boron nitride (BN) have been investigated to explore the dependence of the properties on the number of BN layers. This study demonstrates that significantly improved mechanical properties are exhibited by the composite with the fewest number of BN layers. Thus, with incorporation of three BN layers, the hardness and elastic modulus of the composite showed an increase of 125% and 130%, respectively, relative to pure PMMA. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Growth and applications of superconducting and nonsuperconducting oxide epitaxial films

Growth and characterization of high-temperature-superconducting YBa2Cu3O7 and several metallic-oxide thin films by pulsed laser deposition is described here. An overview of substrates employed for epitaxial growth of perovskite-related oxides is presented. Ag-doped YBa2Cu3O7 films grown on bare sapphire are shown to give T-c = 90 K, critical current > 10(6) A/cm(2) at 77 K and surface resistance = 450 mu Omega. Application of epitaxial metallic LaNiO3 thin films as an electrode for ferroelectric oxide and as a normal metal layer barrier in the superconductor-normal metal-superconductor (SNS) Josephson junction is presented. Observation of giant magnetoresistance (GMR) in the metallic La0-6Pb0-4MnO3 thin films up to 50% is highlighted.

Ultrasonic spray pyrolysis of CZTS solar cell absorber layers and characterization studies

CZTS (Copper Zinc Tin Sulphide) is a wide band gap quartnery chalcopyrite which has a band gap of about 1.45 eV and an absorption coefficient of 10(4) cm(-1); thus making it an ideal material to be used as an absorber layer in solar cells. Ultrasonic Spray Pyrolysis is a deposition technique, where the solution is atomized ultrasonically, thereby giving a fine mist having a narrow size distribution which can be used for uniform coatings on substrates. An Ultrasonic Spray Pyrolysis equipment was developed and CZTS absorber layers were successfully grown with this technique on soda lime glass substrates using aqueous solutions. Substrate temperatures ranging from 523 K to 723 K were used to deposit the CZTS layers and these films were characterized using SEM, EDAX and XRD. It was observed that the film crystallized in the kesterite structure and the best crystallites were obtained at 613 K. It was observed that the grain size progressively increased with temperature. The optical band gap of the material was obtained as 1.54 eV.

Unsteady nonsimilar two-dimensional and axisymmetric water boundary layers with variable viscosity and prandtl number

The influence of temperature-dependent viscosity and Prandtl number on the unsteady laminar nonsimilar forced convection flow over two-dimensional and axisymmetric bodies has been examined where the unsteadiness and (or) nonsimilarity are (is) due to the free stream velocity, mass transfer, and transverse curvature. The partial differential equations governing the flow which involve three independent variables have been solved numerically using an implicit finite-difference scheme along with a quasilinearization technique. It is found that both the skin friction and heat transfer strongly respond to the unsteady free stream velocity distributions. The unsteadiness and injection cause the location of zero skin friction to move upstream. However, the effect of variable viscosity and Prandtl number is to move it downstream. The heat transfer is found to depend strongly on viscous dissipation, but the skin friction is little affected by it. In general, the results pertaining to variable fluid properties differ significantly, from those of constant fluid properties.

Reflectivity and photoluminescence spectra of GaAs quantum wells in a magnetic field

We present photoluminescence and reflectance spectra of GaAs/Al-x Ga-1-x As quantum wells in a magnetic field for the Faraday geometry. The photoluminescence peaks recorded are among the most intense and narrow reported to date. This has allowed us to study the behavior of closely spaced bound exciton lines under a magnetic field. Several new features including magnetic field induced splitting of the bound exciton emission peaks are reported.

ChemInform Abstract: Slicing the Perovskite Structure into Layers: Synthesis of Novel Three- Dimensional and Layered Perovskite Oxides, ALaSrNb2M(II)O9 (A: Na, Cs)

ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option.

Stability of spatially developing boundary layers in pressure gradients

A new formulation of the stability of boundary-layer flows in pressure gradients is presented, taking into account the spatial development of the flow and utilizing a special coordinate transformation. The formulation assumes that disturbance wavelength and eigenfunction vary downstream no more rapidly than the boundary-layer thickness, and includes all terms nominally of order R(-1) in the boundary-layer Reynolds number R. In Blasius flow, the present approach is consistent with that of Bertolotti et al. (1992) to O(R(-1)) but simpler (i.e. has fewer terms), and may best be seen as providing a parametric differential equation which can be solved without having to march in space. The computed neutral boundaries depend strongly on distance from the surface, but the one corresponding to the inner maximum of the streamwise velocity perturbation happens to be close to the parallel flow (Orr-Sommerfeld) boundary. For this quantity, solutions for the Falkner-Skan flows show the effects of spatial growth to be striking only in the presence of strong adverse pressure gradients. As a rational analysis to O(R(-1)) demands inclusion of higher-order corrections on the mean flow, an illustrative calculation of one such correction, due to the displacement effect of the boundary layer, is made, and shown to have a significant destabilizing influence on the stability boundary in strong adverse pressure gradients. The effect of non-parallelism on the growth of relatively high frequencies can be significant at low Reynolds numbers, but is marginal in other cases. As an extension of the present approach, a method of dealing with non-similar flows is also presented and illustrated. However, inherent in the transformation underlying the present approach is a lower-order non-parallel theory, which is obtained by dropping all terms of nominal order R(-1) except those required for obtaining the lowest-order solution in the critical and wall layers. It is shown that a reduced Orr-Sommerfeld equation (in transformed coordinates) already contains the major effects of non-parallelism.

Modelling plane mixing layers using vortex points and sheets

We present here a critical assessment of two vortex approaches (both two-dimensional) to the modelling of turbulent mixing layers. In the first approach the flow is represented by point vortices, and in the second it is simulated as the evolution of a continuous vortex sheet composed of short linear elements or ''panels''. The comparison is based on fresh simulations using approximately the same number of elements in either model, paying due attention in both to the boundary conditions far downstream as well as those on the splitter plate from which the mixing layer issues. The comparisons show that, while both models satisfy the well-known invariants of vortex dynamics approximately to the same accuracy, the vortex panel model, although ultimately not convergent, leads to smoother roll-up and values of stresses and moments that are in closer agreement with the experiment, and has a higher computational efficiency for a given degree of convergence on moments. The point vortex model, while faster for a given number of elements, produces an unsatisfactory roll-up which (for the number of elements used) is rendered worse by the incorporation of the Van der Vooren correction for sheet curvature.

Effect of Constant and Cyclic Current Stressing on the Evolution of Intermetallic Compound Layers

In this paper the effects of constant and cyclic power loads on the evolution of interfacial reaction layers in lead-free solder interconnections are presented. Firstly, the differences in the growth behavior of intermetallic compound (IMC) layers at the cathode and anode sides of the interconnections are rationalized. This is done by considering the changes in the intrinsic fluxes of elements owing to electromigration as well as taking into account the fact that the growth of Cu3Sn and Cu6Sn5 are coupled via interfacial reactions. In this way, better understanding of the effect of electron flux on the growth of each individual layer in the Cu-Sn system can be achieved. Secondly, it is shown that there is a distinct difference between steady-state current stressing (constant current, constant temperature) and power cycling with alternating on- and off-cycle periods (accompanied by a change of temperature). The reasons behind the observed differences are subsequently discussed. Finally, special care is taken to ensure that the current densities are chosen in such a way that there is no risk for even partial melting of the solder interconnections.

Enhancement of uniaxial magnetic anisotropy in Fe thin films grown on GaAs(001) with an MgO underlayer

The understanding and control of anisotropy in Fe films grown on cubic systems such as GaAs and MgO has been of interest from the point of view of applications in devices. We report magnetic anisotropy studies on Fe/GaAs(001) and Fe/MgO/GaAs(001) prepared by pulsed laser deposition. In Fe/GaAs(001), magneto optical Kerr effect (MOKE) measurements revealed a dominant uniaxial anisotropy for Fe thickness less than 20 monolayers (ML) and this was confirmed by ferromagnetic resonance (FMR) studies. Multiple steps in the hysteresis loops were observed for Fe films of thickness 20 and 25 ML. Whereas, in Fe/MgO/GaAs(001), even at 25 ML of Fe, the uniaxial anisotropy remained dominant. The anisotropy constants obtained from FMR spectra have shown that the relative strength of uniaxial anisotropy is higher as compared to the cubic anisotropy constant in the case of Fe/MgO/GaAs(001). (C) 2011 American Institute of Physics. doi:10.1063/1.3556941]

Zn incorporation and band gap shrinkage in p-type GaAs

Dimethylzine (DMZn) was used as a p-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium and arsine (AsH3) as source materials, The hole carrier concentrations and zinc (Zn) incorporation efficiency are studied by using the Hall effect, electrochemical capacitance voltage profiler and photoluminescence (PL) spectroscopy, The influence of growth parameters such as DMZn mole fraction, growth temperature, and AsH, mole fraction on the Zn incorporation have been studied. The hole concentration increases with increasing DMZn and AsH3 mole fraction and decreases with increasing growth temperature. This can be explained by vacancy control model. The PL experiments were carried out as a function of hole concentration (10(17)-1.5 x 10(20) cm(-3)). The main peak shifted to lower energy and the full width at half maximum (FWHM) increases with increasing hole concentrations. We have obtained an empirical relation for FWHM of PL, Delta E(p)(eV) = 1.15 x 10(-8)p(1/3). We also obtained an empirical relation for the band gap shrinkage, Delta E-g in Zn doped GaAs as a function of hole concentration. The value of Delta E-g(eV) = -2.75 x 10(-8)p(1/3), indicates a significant band gap shrinkage at high doping levels, These relations are considered to provide a useful tool to determine the hole concentration in Zn doped GaAs by low temperature PL measurement. The hole concentration increases with increasing AsH3 mole fraction and the main peak is shifted to a lower energy side. This can be explained also by the vacancy control model. As the hole concentration is increased above 3.8 x 10(18) cm(-3), a shoulder peak separated from the main peak was observed in the PL spectra and disappears at higher concentrations. (C) 1997 American Institute of Physics.

Sensing of delaminations in composite laminates using embedded magnetostrictive particle layers

This is an exploratory study to illustrate the feasibility of detecting delamination type of damage in polymeric laminates with one layer of magnetostrictive particles. One such beam encircled with excitation and sensing coils is used for this study. The change in stress gradient of the magnetostrictive layer in the vicinity of delamination shows up as a change in induced voltage in the sensing coil, and therefore provides a means to sense the presence of delamination. Recognizing the constitutive behavior of the Terfenol-D material is highly nonlinear, analytical expressions for the constitutive relations are developed by using curve fitting techniques to the experimental data. Analytical expressions that relate the applied excitation field with the stress and magnetic flux densities induced in the magnetostrictive layer are developed. Numerical methods are used to find the relative change in the induced voltage in the sensing coil due to the presence of delamination. A typical example of unidirectional laminate, with embedded delaminations, is used for the simulation purposes. This exploratory study illustrates that the open-circuit voltage induced in the sensing coil changes significantly (as large of 68 millivolts) with the occurrence of delamination. This feature can be exploited for device off-line inspection techniques and/or linking monitoring procedures for practical applications.

Si incorporation and Burstein-Moss shift in n-type GaAs

Silane (SiH4) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH3) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH4 mole fraction, growth temperature, TMGa and AsH3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SIH4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10(17) - 1.5 x 10(18) cm(-3)). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL, Delta E(n) (eV) = 1.4 x 10(-8) n(1/3). We also obtained an empirical relation for the band gap shrinkage, Delta E-g in Si-doped GaAs as a function of electron concentration. The value of Delta E-g (eV) = -2.75 x 10(-8) n(1/3), indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model. (C) 1999 Elsevier Science S.A. All rights reserved.

Suppression of low-frequency noise in two-dimensional electron gas at degenerately doped Si:P delta layers

We report low-frequency 1/f-noise measurements of degenerately doped Si:P delta layers at 4.2 K. The noise was found to be over six orders of magnitude lower than that of bulk Si:P systems in the metallic regime and is one of the lowest values reported for doped semiconductors. The noise was nearly independent of magnetic field at low fields, indicating negligible contribution from universal conductance fluctuations. Instead, the interaction of electrons with very few active structural two-level systems may explain the observed noise magnitude.

Electrical transport characteristics of Au/n-GaAs Schottky diodes on n-Ge at low temperatures

The current�voltage characteristics of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy on Ge substrates were determined in the temperature range 80�300 K. The zero-bias barrier height for current transport decreases and the ideality factor increases at low temperatures. The ideality factor was found to show the T0 effect and a higher characteristic energy. The excellent matching between the homogeneous barrier height and the effective barrier height was observed and infer good quality of the GaAs film. No generation�recombination current due to deep levels arising during the GaAs/Ge heteroepitaxy was observed in this study. The value of the Richardson constant was found to be 7.04 A K?2 cm?2, which is close to the value used for the determination of the zero-bias barrier height.