139 resultados para FERROELECTRIC DOMAINS
Resumo:
Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been grown on LaAlO3 (LAO) and SiO2/Si substrates with LaNiO3 (LNO) base electrodes by the pulsed laser deposition technique. The effect of substrate temperature on the ferroelectric properties of BVO thin films, has been studied by depositing the thin films at different temperatures. The BVO thin films grown on LNO/LAO were textured whereas the thin films grown on LNO/SiO2/Si were polycrystalline. The BVO thin films grown at 450?°C exhibited good ferroelectric properties indicating that LNO acts as a good electrode material. The remanent polarization Pr and coercive field Ec obtained for the BVO thin films grown at 450?°C on LNO/LAO and LNO/SiO2/Si were 2.5 ?C/cm2, 37 kV/cm and 4.6?C/cm2, 93 kV/cm, respectively. © 1995 American Institute of Physics.
Resumo:
Nebulized spray pyrolysis provides a good low?temperature chemical route for preparing thin films of PbTiO3, (Pb0.9,La0.1)TiO3 and Pb(Zr0.52,Ti0.48)O3. The films are a? or c? axis oriented, with spherical grains of ?30 nm and give satisfactory P?E hysteresis loops. © 1995 American Institute of Physics.
Resumo:
Mechanical milling of a stoichiometric mixture of Bi2O3 and V2O5 yielded nanosized powders of bismuth vanadate, Bi2VO5.5 (BN). Structural evolution of the desired BiV phase, through an intermediate product (BiVO4), was monitored by subjecting the powders, ball milled for various durations to X-ray powder diffraction (XRD), differential thermal analysis (DTA), and transmission electron microscopic (TEM) studies. XRD studies indicate that the relative amount of the BiV phase present in the ball-milled mixture increases with increase in milling time and its formation reaches completion within 54 h of milling. Assynthesized powders were found to stabilize in the high-temperature tetragonal (gamma) phase. DTA analyses of the powders milled for various durations suggest that the BN phase-formation temperature decreases with increase in milling time. The nanometric size (30 nm) of the crystallites in the final product was confirmed by TEM and XRD studies. TEM studies clearly demonstrate the growth of BiV on Bi2O3 crystallites. (C) 1999 Academic Press.
Resumo:
Glasses of various compositions in the system (100 - x)Li-2 B-4 O-7 - x (SrO-Bi2O3-Nb2O5) (10 less than or equal to x less than or equal to 60) (in molar ratio) were prepared via a conventional melt-quenching technique. The glassy nature of the as-quenched samples was established by Differential Thermal Analyses (DTA). X-ray powder diffraction (XRD) and Transmission Electron Microscopic (TEM) studies confirmed the amorphous nature of the as quenched and crystallinity in the heat-treated samples. The formation of nanocrystalline layered perovskite SrBi2Nb2O9 (SBN) phase, in the samples heat-treated at temperatures higher than 550degreesC, through an intermediate fluorite phase in the LBO glass matrix was confirmed by both the XRD and High Resolution Transmission Electron Microscopy (HRTEM). The samples that were heat-treated at two different temperatures, 550 and 625degreesC, (containing 0.35 and 0.47 mum sized SBN crystallites) exhibited broad dielectric anomalies in the vicinity of ferroelectric to paraelectric transition temperature of the parent SBN ceramics. A downward shift in the phase transition temperature was observed with decreasing crystallite size of SBN. The observation of pyroelectric and ferroelectric properties for the present samples confirmed their polar nature.
Resumo:
Glass nanocomposites in the system (100 - x)Li2B4O7-xSrBi(2)Ta(2)O(9) (0 less than or equal to x less than or equal to 22.5, in molar ratio) were fabricated via a melt quenching technique followed by controlled heat-treatment. The as-quenched samples were confirmed to be glassy and amorphous by differential thermal analysis (DTA) and X-ray powder diffraction (XRD) techniques, respectively. The phase formation and crystallite size of the heat-treated samples (glass nanocomposites) were monitored by XRD and transmission electron microscopy (TEM). The relative permittivities (epsilon(tau)') of the glass nanocomposites for different compositions were found to lie in between that of the parent host glass (Li2B4O7) and strontium bismuth tantalate (SBT) ceramic in the frequency range 100 Hz-40 MHz at 300 K, whereas the dielectric loss (D) of the glass nanocomposite was less than that of both the parent phases. Among the various dielectric models employed to predict the effective relative permittivity of the glass nanocomposite, the one obtained using the Maxwell's model was in good agreement with the experimentally observed value. Impedance analysis was employed to rationalize the electrical behavior of the glasses and glass nanocomposites. The pyroelectric response of the glasses and glass nanocomposites was monitored as a function of temperature and the pyroelectric coefficient for glass and glass nanocomposite (x = 20) at 300 K were 27 muC m(-2) K-1 and 53 muC m(-2) K-1, respectively. The ferroelectric behavior of these glass nanocomposites was established by P vs. E hysteresis loop studies. The remnant polarization (P-r) of the glass nanocomposite increases with increase in SBT content. The coercive field (E-c) and P-r for the glass nanocomposite (x = 20) were 727 V cm(-1) and 0.527 muC cm(-2), respectively. The optical transmission properties of these glass nanocomposites were found to be composition dependent. The refractive index (n = 1.722), optical polarizability (am = 1.266 6 10 23 cm 3) and third-order nonlinear optical susceptibility (x(3) = 3.046 6 10(-21) cm(3)) of the glass nanocomposite (x = 15) were larger than those of the as-quenched glass. Second harmonic generation (SHG) was observed in transparent glass nanocomposites and the d(eff) for the glass nanocomposite (x = 20) was found to be 0.373 pm V-1.
Resumo:
Partially grain-oriented (48%) ceramics of strontium bismuth tantalate (SrBi2Ta2O9) have been fabricated via conventional sintering. The grain-orientation factor of the ceramics was determined, as a function of both the sintering temperature and duration of sintering using X-ray powder diffraction (XRD) techniques. Variations in microstructural features (from acircular to plate like morphology) as a function of sintering temperature of the pellets were monitored by Scanning Electron Microscopy (SEM). The dielectric constant and loss measurements as functions of both frequency and temperature have been carried out along the directions parallel and perpendicular to the pressing axis. The anisotropy (epsilon(rn)/epsilon(rp)) associated was found to be 2.21. The effective dielectric constant of the samples with varying porosity was predicted using different dielectric mixture formulae. The grain boundary and grain interior contributions to the dielectric properties were rationalized using the impedance spectroscopy. The pyroelectric coefficient for strontium bismuth tantalate ceramic was determined along the parallel and perpendicular directions to the pressing axis and found to be -23 muC/m(2)K and -71 muC/m(2)K, respectively at 300 K. The ferroelectric properties of these partially grain-oriented ceramics are superior in the direction perpendicular to the pressing axis to that in the parallel direction.
Resumo:
Glass nanocomposites in the system (1-x)Li2B4O7-xBi(2)WO(6) (0 less than or equal to x less than or equal to 0.35, in molar ratio) were fabricated by splat quenching technique. The as-quenched samples were X-ray amorphous. Differential Thermal Analyses (DTA) confirmed their glassy nature. The composites on heat-treatment at 720 K yielded monophasic crystalline bismuth tungstate in lithium borate glass matrix. The average size and the spherical nature of the dispersed crystallites were assessed via High Resolution Transmission Electron Microscopy (HRTEM). The dielectric constants (epsilon(r)) of both the as-quenched and post heat-treated composites were found to increase with increase in x (bismuth tungstate content) at all the frequencies (100 Hz-40 MHz) in the temperature range 300 K-870 K. While the dielectric loss (D) decreased with increasing x. The pyroelectric coefficients of the as-quenched (consisting 20 nm sized crystallites) and 720 K heat-treated sample (x = 0.3) were determined as a function of temperature (300 K-873 K) and the values obtained at room temperature were 20 and 60 muC/m(2) K respectively. The as-quenched and heat-treated (720 K) glass nanocomposites exhibited ferroelectric (P Vs E) hysteresis loops. The remnant polarization and coercive field of the heat-treated glass nanocomposite at 300 K were respectively 2.597 muC/cm(2) and 543 V/cm. These glass nanocomposites were birefringent in the 300-873 K temperature range.
Resumo:
The results of the studies on the effect of rare earth Nd doping on the phase formation behavior and electrical properties of sol-gel derived Pb-1.05(Zr0.53Ti0.47)O-3 (PZT) thin films are presented. The perovskite phase is obtained up to 5 at. % doping and beyond that pyrochlore phase was found to coexist with the perovskite phase in all the films. The transition temperature of undoped lead zirconate titanate (PZT) film was found to be reduced with Nd doping. The Nd doped films also exhibited typical relaxor-type behavior and a diffuse phase transition, similar to that observed in relaxor materials. The introduction of Nd into the PZT lattice probably introduces disorder in the B site of ABO(3) lattice, which causes the observed dielectric relaxation. Efforts were made to isolate the irreversible component contributions in low field dielectric and high field polarization switching behavior. (C) 2001 American Institute of Physics.
Resumo:
Single crystals of a recent ferroelectric material, glycine phosphite were grown from aqueous solution employing the techniques of slow cooling and controlled evaporation. Powder X-ray diffraction studies as well as thermal analysis were carried out on the grown crystals. The morphology of the crystal has been determined using contact and optical goniometry. The mechanical hardness of the crystal was evaluated by Vickers indentation method. Thickness dependence of the dielectric properties has been investigated and the results can be interpreted in terms of a surface layer of lower dielectric constant.
Lead Stereochemistry in Incommensurate Ferroelectric Perovskites and in Incommensurate Lead Monoxide
Resumo:
We have performed Rietveld refinements on neutron and synchrotron diffraction patterns and density functional calculations on various ferroelectric lead perovskites and on α lead monoxide (litharge). These structural data have allowed to shed some light on lead stereochemistry in these compounds. In particular, we discuss the changing in the lead behaviour between the paraelectric cubic phases and the low temperature anti or ferroelectric phases in Pb2CoWO6 and Pb2MgTeO6 (both incommensurate), in Pb2MgWO6 (antiferroelectric) and in PbMg1/3Nb2/3O3 (relaxor). The possible phase transition mechanisms are reviewed and the bonds are compared to those in the aperiodic structure of α-lead monoxide.
Resumo:
Thin films of Bi2VO5.5 (BVO), a vanadium analog of the n = I member of the Aurivillius family, have been prepared by pulsed laser deposition. The BVO films grow along the [001] direction on LaNiO3(LNO) and YBa2Cu3O7 (YBCO) electrode buffer layers on LaA- IO3(LAO) substrates as obtained from X-ray diffraction studies. The microstructure of the films and of the interfaces within the film and between the film and the substrate were characterized using transmission electron microscopy. The in-plane epitaxial relationship of the rhombohedral LNO on perovskite LAO was [100] LNO // [100] LAO and [001] LNO // [001] LAO. High resolution lattice images showed a sharp interface between LNO and LAO. However, the LNO film is twinned with a preferred orientation along the growth direction. The BVO layer is single crystalline on both LNO/LAO and YBCO/LAO with the caxis parallel to the growth direction except for a thin layer of about 400 Å at the interface which is polycrystalline.
Resumo:
Thin films of ferroelectric ABi2Ta2O9 bismuth-layered structure, where A = Ba, Sr and Ca, were prepared by pulsed laser deposition technique on Pt/TiO2/SiO2/Si(100) substrates. The influence of substrate temperature between 500 to 750°C, and oxygen partial pressure 100-300 mTorr, on the structural and electrical properties of the films was investigated. The films deposited above 650°C substrate temperature showed complete Aurivillius layered structure. Films annealed at 750°C for 1h in oxygen atmosphere have exhibited better electrical properties. Atomic force microscopy study of surface topography shows that the films grown at lower temperature has smaller grains and higher surface roughness. This paper discusses the pronounced influence of A-site cation substitution on the structural and ferroelectric properties with the aid of Raman spectroscopy, X-ray diffraction and electrical properties. The degradation of ferroelectric properties with Ba and Ca substitution at A-sites is attributed to the higher structural distortion caused by changing tolerance factor. A systematic proportionate variation of coercive field is attributed to electronegativity difference of A-site cations.
Resumo:
YMnO3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion.
Resumo:
The occurrence of DNA architectural proteins containing two functional domains derived from two different architectural proteins is an interesting emerging research theme in the field of nucleoid structure and function. Mycobacterium tuberculosis HupB, unlike Escherichia coli HU, is a two-domain protein that, in the N-terminal region, shows broad sequence homology with bacterial HU. The long C-terminal extension, on the other hand, contains seven PAKK/KAAK motifs, which are characteristic of the histone H1/H5 family of proteins. In this article, we describe several aspects of HupB function, in comparison with its truncated derivatives lacking either the C-terminus or N-terminus. We found that HupB binds a variety of DNA repair and replication intermediates with K(d) values in the nanomolar range. By contrast, the N-terminal fragment of M. tuberculosis HupB (HupB(MtbN)) showed diminished DNA-binding activity, with K(d) values in the micromolar range, and the C-terminal domain was completely devoid of DNA-binding activity. Unlike HupB(MtbN), HupB was able to constrain DNA in negative supercoils and introduce negative superhelical turns into relaxed DNA. Similarly, HupB exerted a robust inhibitory effect on DNA strand exchange promoted by cognate and noncognate RecA proteins, whereas HupB(MtbN), even at a 50-fold molar excess, had no inhibitory effect. Considered together, these results suggest that synergy between the N-terminal and C-terminal domains of HupB is essential for its DNA-binding ability, and to modulate the topological features of DNA, which has implications for processes such as DNA compaction, gene regulation, homologous recombination, and DNA repair.