Support vector clustering-based direct coherency identification of generators in a multi-machine power system

This study investigates the application of support vector clustering (SVC) for the direct identification of coherent synchronous generators in large interconnected multi-machine power systems. The clustering is based on coherency measure, which indicates the degree of coherency between any pair of generators. The proposed SVC algorithm processes the coherency measure matrix that is formulated using the generator rotor measurements to cluster the coherent generators. The proposed approach is demonstrated on IEEE 10 generator 39-bus system and an equivalent 35 generators, 246-bus system of practical Indian southern grid. The effect of number of data samples and fault locations are also examined for determining the accuracy of the proposed approach. An extended comparison with other clustering techniques is also included, to show the effectiveness of the proposed approach in grouping the data into coherent groups of generators. This effectiveness of the coherent clusters obtained with the proposed approach is compared in terms of a set of clustering validity indicators and in terms of statistical assessment that is based on the coherency degree of a generator pair.

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO2) thin films were deposited onto p-Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80-200W. The as-deposited TiO2 films were annealed at a temperature of 1023K. The post-annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO2/p-Si structure were determined from the capacitance-voltage and current-voltage characteristics. X-ray diffraction studies confirmed that the as-deposited films were amorphous in nature. After post-annealing at 1023K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers >160W showed the mixed anatase and rutile phases of TiO2. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air-annealed Al/TiO2/p-Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO2/p-Si (metal-insulator-semiconductor) was systematically investigated. Copyright (c) 2014 John Wiley & Sons, Ltd.