219 resultados para Electrical behaviour
Resumo:
This paper reports the electrical discharge resistant characteristics of epoxy nanocomposite systems with SiO2 and Al2O3 nano-fillers. A comparative study is performed between unfilled epoxy systems, nanoparticle filled epoxy systems and a bimodal system containing both micrometer and nanometer sized fillers of the same material. The samples are exposed to surface discharges and the levels of surface degradation are analyzed through SEM and surface roughness measurements. Significant variations were observed in the electrical discharge resistant characteristics between the different composite systems and it is seen that the introduction of nano-fillers to epoxy is advantageous in improving the electrical discharge resistance of epoxy.
Resumo:
Differential scanning calorimetry, x-ray diffraction and transmission electron microscopy have been employed to determine the thermal stability and identify the crystalline phases on devitrification of Metglas 2826 MB. The glass crystallizes intoγ-FeNiMo and fcc (FeNi)23B6 with activation energies of 270 and 375 kJ mol−1 respectively. The reactions are primary and polymorphic in nature. The influence of Mo towards crystallization of Fe40Ni40B20 has been to enhance the formation of the fcc (FeNi)23B6 phase in preference to orthorhombic (FeNi)3B phase and to raise the thermal stability of the amorphous state.
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The question whether so-called ‘pure’ strains of yeast are cytologically pure ought to receive the earnest attention of those engaged in the study of the genetics of yeasts. The classification of yeasts is purely arbitrary, and the only reliable method of obtaining any particular species is to get a sample of the original culture. But even if the original culture is available one is not sure that it is cytologically pure, for proportion changes might have occurred in it since isolation. In rapidly growing organisms like the yeasts this is but natural. Investigations on higher plants indicate that polyploids usually mutate to dwarfness as a survival-measure and hence the random size relationships between the diploids and the polyploids offer no morphological criterion for differentiation into types.
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Indium sulphide (INS) is a III-VI compound semiconductor and crystallizes in the orthorhombic structure with a space group D~(Pmnn). The lattice parameters at room temperature and atmospheric pressure are: a = 3.944 A, b = 4.447 A and c= 10.648#, [1, 2]. The crystal structure comprises an ethane-like SalnlnS3 atomic arrangement;the SalnInS3 groups are mutually linked by sharing S corners and form a three-dimensional network.
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This splitting techniques for MARKOV chains developed by NUMMELIN (1978a) and ATHREYA and NEY (1978b) are used to derive an imbedded renewal process in WOLD's point process with MARKOV-correlated intervals. This leads to a simple proof of renewal theorems for such processes. In particular, a key renewal theorem is proved, from which analogues to both BLACKWELL's and BREIMAN's forms of the renewal theorem can be deduced.
Resumo:
A novel method, designated the holographic spectrum reconstruction (HSR) method, is proposed for achieving simultaneous display of the spectrum and image of an object in a single plane. A study of the scaling behaviour of both the spectrum and the image has been carried out and based on this study, it is demonstrated that a lensless coherent optical processor can be realized.
Resumo:
Polyaniline (PANI)/para-toluene sulfonic acid (pTSA) and PANI/pTSA-TiO2 composites were prepared using chemical method and characterized by infrared spectroscopy (IR), powder X-ray diffraction (XRD), scanning electron microscopy (SEM). The electrical conductivity and magnetic properties were also measured. In corroboration with XRD, the micrographs of SEM indicated the homogeneous dispersion of TiO nanoparticles in bulk PANI/pTSA matrix. Conductivity of the PANI/pTSA-TiO2 was higher than the PAN[/pTSA, and the maximum conductivity obtained was 9.48 (S/cm) at 5 wt% of TiO2. Using SQUID magnetometer, it was found that PANI/pTSA was either paramagnetic or weakly ferromagnetic from 300 K down to 5 K with H-C approximate to 30 Oe and M-r approximate to 0.015 emu/g. On the other hand,PANI/pTSA-TiO2 was diamagnetic from 300 K down to about 50 K and below which it was weakly ferromagnetic. Furthermore, a nearly temperature-independent magnetization was observed in both the cases down to 50 K and below which the magnetization increased rapidly (a Curie like susceptibility was observed). The Pauli susceptibility (chi(pauli)) was calculated to be about 4.8 X 10(-5) and 1.6 x 10(-5)emug(-1) Oe(-1) K for PANI/pTSA and PANI/pTSA-TiO2, respectively.
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Transparent BaNaB9O15 (BNBO) glasses were fabricated via the conventional melt-quenching technique. X-ray powder diffraction (XRD) followed by differential scanning calorimetric (DSC) studies confirmed the amorphous and glassy nature of the as-quenched samples, respectively. The effect of seeding on the crystallization of BNBO glasses was studied by non-isothermal DSC method and was modeled using the Johnson-Mehl-Avrami and Ozawa equations. The activation energy for seeded glasses decreased with the increase in fraction of crystallization. The values for the onset of crystallization and Avrami exponent were found to be lower for seeded samples which were associated with the heterogeneous nucleation and epitaxial processes.
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An improved higher order transverse shear deformation theory is employed to arrive at modified constitutive relations which can be used in the flexural, buckling and vibration analysis of laminated plates and shells. The strain energy for such systems is then expressed in terms of the displacements and the rotations for ready reference and use. Numerical values of vibration frequencies are obtained using this formulation employing Ritz's method of analysis. The results are compared with those available in the literature to validate the analysis presented.
Resumo:
The effect of pressure on the electrical resistivity of bulk Si20Te80 glass is reported. Results of calorimetric, X-ray and transmission electron microscopy investigations at different stages of crystallization of bulk Si20Te80 glass are also presented. A pressure induced glass-to-crystal transition occurs at a pressure of 7 GPa. Pressure and temperature dependence of the electrical resistivity of Si20Te80 glass show the observed transition is a pressure induced glassy semiconductor to crystalline metal transition. The glass also exhibits a double Tg effect and double stage crystallization, under heating. The differences between the temperature induced crystallization (primary crystallization) and pressure induced congruent crystallization are discussed.
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The DC and AC conductivity studies of As---Se glasses over a wide range of compositions have been reported and discussed. The contribution to conductivity from transport among extended states has been delineated and the possible existence of a characteristic temperature is indicated. Two conductivity maxima have been observed as a function of composition in AC conductivities at lower temperatures.