An extended Cahn-Hilliard model for interfaces with cubic anisotropy

For studying systems with a cubic anisotropy in interfacial energy sigma, we extend the Cahn-Hilliard model by including in it a fourth-rank term, namely, gamma (ijlm) [partial derivative (2) c/(partial derivativex(i) partial derivativex(j))] [partial derivative (2) c/(partial derivativex(l) partial derivativex(m))]. This term leads to an additional linear term in the evolution equation for the composition parameter field. It also leads to an orientation-dependent effective fourth-rank coefficient gamma ([hkl]) in the governing equation for the one-dimensional composition profile across a planar interface. The main effect of a non-negative gamma ([hkl]) is to increase both sigma and interfacial width w, each of which, upon suitable scaling, is related to gamma ([hkl]) through a universal scaling function. In this model, sigma is a differentiable function of interface orientation (n) over cap, and does not exhibit cusps; therefore, the equilibrium particle shapes (Wulff shapes) do not contain planar facets. However, the anisotropy in the interfacial energy can be large enough to give rise to corners in the Wulff shapes in two dimensions. In particles of finite sizes, the corners become rounded, and their shapes tend towards the Wulff shape with increasing particle size.

Ellipsometry as a Sensitive Technique to Probe film -Substrate Interfaces: Al2O3 on Si(100)

An attempt has been made to study the film-substrate interface by using a sensitive, non- conventional tool. Because of the prospective use of gate oxide in MOSFET devices, we have chosen to study alumina films grown on silicon. Film-substrate interface of alumina grown by MOCVD on Si(100) was studied systematically using spectroscopic ellipsometry in the range 1.5-5.0 eV, supported by cross-sectional SEM, and SIMS. The (ε1,ε2) versus energy data obtained for films grown at 600°C, 700°C, and 750°C were modeled to fit a substrate/interface/film “sandwich”. The experimental results reveal (as may be expected) that the nature of the substrate -film interface depends strongly on the growth temperature. The simulated (ε1,ε2) patterns are in excellent agreement with observed ellipsometric data. The MOCVD precursors results the presence of carbon in the films. Theoretical simulation was able to account for the ellipsometry data by invoking the presence of “free” carbon in the alumina films.

Interfaces In Quasicrystalline Systems

Structural relations between quasicrystalline and related crystalline rational approximant phases have been of interest for some time now. Such relations are now being used to understand interface structures. Interfaces between structural motif - wise related, but dissimilarly periodic phases are expected to show a degree of lattice match in certain directions. Our earlier studies in the Al-Cu-Fe system using the HREM technique has shown this to be true. The structural difference leads to well defined structural ledges in the interface between the icosahedral Al-Cu-Fe phase and the monoclinic Al13Fe4 type phase. In the present paper we report our results on the HREM study of interfaces in Al-Cu-Fe and Al-Pd-Mn systems. The emphasis will be on heterophase interfaces between quasiperiodic and periodic phases, where the two are structurally related. An attempt will be made to correlate the results with calculated lattice projections of the two structures on the grain boundary plane.

Interfaces In Quasicrystalline Systems

Structural relations between quasicrystalline and related crystalline rational approximant phases have been of interest for some time now. Such relations are now being used to understand interface structures. Interfaces between structural motif - wise related, but dissimilarly periodic phases are expected to show a degree of lattice match in certain directions. Our earlier studies in the Al-Cu-Fe system using the HREM technique has shown this to be true. The structural difference leads to well defined structural ledges in the interface between the icosahedral Al-Cu-Fe phase and the monoclinic Al13Fe4 type phase. In the present paper we report our results on the HREM study of interfaces in Al-Cu-Fe and Al-Pd-Mn systems. The emphasis will be on heterophase interfaces between quasiperiodic and periodic phases, where the two are structurally related. An attempt will be made to correlate the results with calculated lattice projections of the two structures on the grain boundary plane.

Real-time Computer Simulation of Three Dimensional Elastostatics using the Finite Point Method

Real-time simulation of deformable solids is essential for some applications such as biological organ simulations for surgical simulators. In this work, deformable solids are approximated to be linear elastic, and an easy and straight forward numerical technique, the Finite Point Method (FPM), is used to model three dimensional linear elastostatics. Graphics Processing Unit (GPU) is used to accelerate computations. Results show that the Finite Point Method, together with GPU, can compute three dimensional linear elastostatic responses of solids at rates suitable for real-time graphics, for solids represented by reasonable number of points.

SOS films and interfaces: chemical aspects

The possible chemical reactions that take place during the growth of single crystal films of silicon on sapphire (SOS) are analyzed thermodynamically. The temperature for the growth of good quality epitaxial films is dependent on the extent of water vapor present in the carrier gas. The higher the water vapor content the higher the temperature needed to grow SOS films. Due to the interaction of silicon with sapphire at elevated temperatures, SOS films are doped with aluminum. The extent of doping is dependent on the conditions of film growth. The doping by aluminum from the substrate increases with increasing growth temperatures and decreasing growth rates. The equilibrium concentrations of aluminum at the silicon-sapphire interface are calculated as a function of deposition temperature, assuming that SiO2 or Al6Si2O13 are the products of reaction. It is most likely that the product could be a solid solutio n of Al2O3 in SiO2. The total amount of aluminum released due to the interaction between silicon and sapphire will account only for the formation of not more than one monolayer of reaction product unless the films are annealed long enough at elevated temperatures. This value is in good agreement with the recently reported observations employing high resolution transmission electron microscopy.

Tension-Softening Properties for Concrete-Concrete Interfaces

The tension-softening parameters for different concrete-concrete interfaces are determined using the bimaterial cracked hinge model. Beams of different sizes having a jointed interface between two different strengths of concrete are tested under three-point bending (TPB). The load versus crack mouth opening displacement (CMOD) results are used to obtain the stress-crack opening relation through an inverse analysis. In addition, the fracture energy, tensile strength, and modulus of elasticity are also computed from the inverse analysis. The fracture properties are used in the nonlinear fracture mechanics analysis of a concrete patch-repaired beam to determine its load-carrying capacity when repaired with concrete of different strengths.

Computer-Aided Reliability Analysis of Complicated Networks

A computer-aided procedure is described for analyzing the reliability of complicated networks. This procedure breaks down a network into small subnetworks whose reliability can be more readily calculated. The subnetworks which are searched for are those with only two nodes; this allows the original network to be considerably simplified.

Computer-Aided Reliability Analysis of Complicated Networks

A computer-aided procedure is described for analyzing the reliability of complicated networks. This procedure breaks down a network into small subnetworks whose reliability can be more readily calculated. The subnetworks which are searched for are those with only two nodes; this allows the original network to be considerably simplified.

Computer-aided analysis of high-speed protective relays

Most of the modern distance relays are designed to avoid overreaching due to the transient d.c. component of the fault current, whereas a more likely source of transients in e.h.v. systems is the oscillatory discharge of the system charging current into the fault. Until now attempts have not been made to reproduce these transients in the laboratory. This paper describes an analogue and an accurate digital simulation of these harmonic transients. The dynamic behaviour of a typical polarised mho-type relay is analysed, and results are presented. The paper also advocates the use of active filters for filtering the harmonics associated with e.h.v. system, and hence, to improve the speed of response and accuracy of the protective relays.