Magnetic and dielectric interactions in nano zinc ferrite powder: Prepared by self-sustainable propellant chemistry technique

The structural, magnetic and dielectric properties of nano zinc ferrite prepared by the propellant chemistry technique are studied. The PXRD measurement at room temperature reveal that the compound is in cubic spinel phase, belong to the space group Fd (3) over barm. The unit cell parameters have been estimated from Rietveld refinement. The calculated force constants from FTIR spectrum corresponding to octahedral and tetrahedral sites at 375 and 542 cm(-1) are 6.61 x 10(2) and 3.77 x 10(2) N m(-1) respectively; these values are slightly higher compared to the other ferrite systems. Magnetic hysteresis and EPR spectra show superparamagnetic property nearly to room temperature due to comparison values between magnetic anisotropy energy and the thermal energy. The calculated values of saturation magnetization, remenant magnetization, coercive field and magnetic moment supports for the existence of multi domain particles in the sample. The temperature dependent magnetic field shows the spin freezing state at 30 K and the blocking temperature at above room temperature. The frequency dependent dielectric interactions show the variation of dielectric constant, dielectric loss and impedance as similar to other ferrite systems. The AC conductivity in the prepared sample is due to the presence of electrons, holes and polarons. The synthesized material is suitable for nano-electronics and biomedical applications. (C) 2014 Elsevier B.V. All rights reserved.

Discrete time second order sliding mode observer for uncertain linear multi-output system

This paper presents a second order sliding mode observer (SOSMO) design for discrete time uncertain linear multi-output system. The design procedure is effective for both matched and unmatched bounded uncertainties and/or disturbances. A second order sliding function and corresponding sliding manifold for discrete time system are defined similar to the lines of continuous time counterpart. A boundary layer concept is employed to avoid switching across the defined sliding manifold and the sliding trajectory is confined to a boundary layer once it converges to it. The condition for existence of convergent quasi-sliding mode (QSM) is derived. The observer estimation errors satisfying given stability conditions converge to an ultimate finite bound (within the specified boundary layer) with thickness O(T-2) where T is the sampling period. A relation between sliding mode gain and boundary layer is established for the existence of second order discrete sliding motion. The design strategy is very simple to apply and is demonstrated for three examples with different class of disturbances (matched and unmatched) to show the effectiveness of the design. Simulation results to show the robustness with respect to the measurement noise are given for SOSMO and the performance is compared with pseudo-linear Kalman filter (PLKF). (C) 2013 Published by Elsevier Ltd. on behalf of The Franklin Institute

Analysis of absorption characteristics of stacked patch arrays on moderately lossy dielectric layers

It is demonstrated that a square patch array on a moderately lossy dielectric can be transformed into a near-perfect absorber by the addition of a metallic square loop layer between the patch array and the metal back. In this configuration, the condition of perfect absorption can be easily obtained by modifying loop dimensions. The absorption properties of this configuration are analyzed theoretically using an equivalent circuit model and full-wave electromagnetic simulations. Experimental investigations included a bistatic radar cross-section measurement, which ensured that there are no scattered fields in other directions. An array structure built on a commercially available FR4 substrate with copper metallization is used to experimentally validate these results.

Vacancy mediated clipping of multi-layered graphene: A precursor for 1, 2 and 3D carbon structures

Using first principles calculations, we show that the overlapping defects in bi-layer graphene (both AA-and AB-stacked) interact forming inter-layer covalent bonds, giving rise to two-dimensional (2D) clipped structures, without explicit use of functional groups. These clipped structures can be transformed into one-dimensional (1D) double wall nanotubes (DWCNT) or multi-layered three dimensional (3D) bulk structures. These clipped structures show good mechanical strength due to covalent bonding between multi-layers. Clipping also provides a unique way to simultaneously harness the conductivity of both walls of a double wall nanotube through covalently bonded scattering junctions. With additional conducting channels and improved mechanical stability, these clipped structures can lead to a myriad of applications in novel devices. (C) 2015 Elsevier Ltd. All rights reserved.

Modification of metal-InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin Al2O3 interlayers

The effect of inserting ultra-thin atomic layer deposited Al2O3 dielectric layers (1 nm and 2 nm thick) on the Schottky barrier behaviour for high (Pt) and low(Al) work function metals on n- and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates (both native oxide and sulphur passivated) for both the Al/p-InGaAs and Al/Al2O3/p-InGaAs contacts. The Pt contacts directly deposited on p-InGaAs displayed evidence of limited rectification which increased with Al2O3 interlayer thickness. Ohmic contacts were formed for both metals on n-InGaAs in the absence of an Al2O3 interlayer, regardless of surface passivation. However, limited rectifying behaviour was observed for both metals on the 2 nm Al2O3/n-InGaAs samples for the sulphur passivated InGaAs surface, indicating the importance of both surface passivation and the presence of an ultra-thin dielectric interlayer on the current-voltage characteristics displayed by these devices. (C) 2015 Elsevier B.V. All rights reserved.

High performance sol-gel spin-coated titanium dioxide dielectric based MOS structures

High-kappa TiO2 thin films have been fabricated using cost effective sol-gel and spin-coating technique on p-Si (100) wafer. Plasma activation process was used for better adhesion between TiO2 films and Si. The influence of annealing temperature on the structure-electrical properties of titania films were investigated in detail. Both XRD and Raman studies indicate that the anatase phase crystallizes at 400 degrees C, retaining its structural integrity up to 1000 degrees C. The thickness of the deposited films did not vary significantly with the annealing temperature, although the refractive index and the RMS roughness enhanced considerably, accompanied by a decrease in porosity. For electrical measurements, the films were integrated in metal-oxide-semiconductor (MOS) structure. The electrical measurements evoke a temperature dependent dielectric constant with low leakage current density. The Capacitance-voltage (C-V) characteristics of the films annealed at 400 degrees C exhibited a high value of dielectric constant (similar to 34). Further, frequency dependent C-V measurements showed a huge dispersion in accumulation capacitance due to the presence of TiO2/Si interface states and dielectric polarization, was found to follow power law dependence on frequency (with exponent `s'=0.85). A low leakage current density of 3.6 x 10(-7) A/cm(2) at 1 V was observed for the films annealed at 600 degrees C. The results of structure-electrical properties suggest that the deposition of titania by wet chemical method is more attractive and cost-effective for production of high-kappa materials compared to other advanced deposition techniques such as sputtering, MBE, MOCVD and AID. The results also suggest that the high value of dielectric constant kappa obtained at low processing temperature expands its scope as a potential dielectric layer in MOS device technology. (C) 2015 Elsevier Ltd. All rights reserved.

Stimuli-responsive weak polyelectrolyte multilayer films: A thin film platform for self triggered multi-drug delivery

Polyelectrolyte multilayer (PEM) thin film composed of weak polyelectrolytes was designed by layer-by-layer (LbL) assembly of poly(allylamine hydrochloride) (PAH) and poly(methacrylic acid) (PMA) for multi-drug delivery applications. Environmental stimuli such as pH and ionic strength showed significant influence in changing the film morphology from pore-free smooth structure to porous structure and favored triggered release of loaded molecules. The film was successfully loaded with bovine serum albumin (BSA) and ciprofloxacin hydrochloride (CH) by modulating the porous polymeric network of the film. Release studies showed that the amount of release could be easily controlled by changing the environmental conditions such as pH and ionic strength. Sustained release of loaded molecules was observed up to 8 h. The fabricated films were found to be biocompatible with epithelial cells during in-vitro cell culture studies. PEM film reported here not only has the potential to be used as self-responding thin film platform for transdermal drug delivery, but also has the potential for further development in antimicrobial or anti-inflammatory coatings on implants and drug-releasing coatings for stents. (C) 2015 Elsevier B.V. All rights reserved.