High-Rate, Multisymbol-Decodable STBCs From Clifford Algebras

It is well known that space-time block codes (STBCs) obtained from orthogonal designs (ODs) are single-symbol decodable (SSD) and from quasi-orthogonal designs (QODs) are double-symbol decodable (DSD). However, there are SSD codes that are not obtainable from ODs and DSD codes that are not obtainable from QODs. In this paper, a method of constructing g-symbol decodable (g-SD) STBCs using representations of Clifford algebras are presented which when specialized to g = 1, 2 gives SSD and DSD codes, respectively. For the number of transmit antennas 2(a) the rate (in complex symbols per channel use) of the g-SD codes presented in this paper is a+1-g/2(a-9). The maximum rate of the DSD STBCs from QODs reported in the literature is a/2(a-1) which is smaller than the rate a-1/2(a-2) of the DSD codes of this paper, for 2(a) transmit antennas. In particular, the reported DSD codes for 8 and 16 transmit antennas offer rates 1 and 3/4, respectively, whereas the known STBCs from QODs offer only 3/4 and 1/2, respectively. The construction of this paper is applicable for any number of transmit antennas. The diversity sum and diversity product of the new DSD codes are studied. It is shown that the diversity sum is larger than that of all known QODs and hence the new codes perform better than the comparable QODs at low signal-to-noise ratios (SNRs) for identical spectral efficiency. Simulation results for DSD codes at variousspectral efficiencies are provided.

Electrical transport and crystallization studies of glassy semiconducting Si20Te80 alloy at high pressure

The effect of pressure on the electrical resistivity of bulk Si20Te80 glass is reported. Results of calorimetric, X-ray and transmission electron microscopy investigations at different stages of crystallization of bulk Si20Te80 glass are also presented. A pressure induced glass-to-crystal transition occurs at a pressure of 7 GPa. Pressure and temperature dependence of the electrical resistivity of Si20Te80 glass show the observed transition is a pressure induced glassy semiconductor to crystalline metal transition. The glass also exhibits a double Tg effect and double stage crystallization, under heating. The differences between the temperature induced crystallization (primary crystallization) and pressure induced congruent crystallization are discussed.

High-Pressure Nmr And Compressibility Evidence For A Phase-Transition In The Protonic Conductor (NH4)4Fe(CN)6.1.5H2o

1H NMR at high hydrostatic pressures and compressibility studies show that the protonic conductor (NH4)4Fe(CN)6·1.5H2O undergoes a phase transition around 0.45 GPa. The transition is characterized by a large hysteresis. From the NMR studies, an activation volume of 6% is obtained below the phase transition, indicating the dominance of Frenkel defects.

Twin roller quenching technique and preparation of glasses of high melting ionic solids

A rapid quenching technique with a quenching rate of roughly 106°C/sec has been developed to prepare glassy samples of ABO3 type materials. Glasses of potassium lithium niobate have been prepared by this technique. These glasses have been characterized by x-ray diffraction, electron diffraction and differential scanning calorimetry techniques to assess the quality of the obtained glasses.

Nonlinear transport in semiconducting polymers at high carrier densities

Conducting and semiconducting polymers are important materials in the development of printed, flexible, large-area electronics such as flat-panel displays and photovoltaic cells. There has been rapid progress in developing conjugated polymers with high transport mobility required for high-performance field-effect transistors (FETs), beginning(1) with mobilities around 10(-4) cm(2) V-1 s(-1) to a recent report(2) of 1 cm(2) V-1 s(-1) for poly(2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b] thiophene) (PBTTT). Here, the electrical properties of PBTTT are studied at high charge densities both as the semiconductor layer in FETs and in electrochemically doped films to determine the transport mechanism. We show that data obtained using a wide range of parameters (temperature, gate-induced carrier density, source-drain voltage and doping level) scale onto the universal curve predicted for transport in the Luttinger liquid description of the one-dimensional `metal'.

High-temperature superconductivity in the 100 K region in perovskite-related oxides of the Ln-Ba-Cu-O (Ln=Y or La) system

Oxides of the Y-Ba-Cu-O system are found to show onset of superconductivity in the 100–120 K region.

Design of high-order filters with restricted component values

The feasibility of realising a high-order LC filter with a small set of different capacitor values, without sacrificing the frequency response specifications, is indicated. This idea could be conveniently adopted in other filter structures also—for example the FDNR transformed filter realisations.

Sulphate ion dynamics in alpha-alums studied by esr at high pressures

The variation of zero-field splitting and linewidth of Cr3+ ion in KCr and KAI alums with hydrostatic pressure and with temperature is investigated. A model for the apparent phase transition is proposed on the basis of the reorientational motion of the SO2�4 groups.

High pressure transport behaviour of AgI-Ag2O-MoO3 glasses and the cluster model

The effect of pressure on the conductivity of fast ion conducting AgI-Ag2O-MoO3 glasses has been investigated down to 150 K. The observed variation of conductivities appears to support the application of cluster model to the ionic glasses.

High-Frequency Current Source Inverter

The frequency range of the current source inverter (CSI) is limited by the slow commutation process in the inverter circuit. A method to reduce the commutation time and to limit the commutation capacitor voltage is proposed. A brief description of the conventional CSI and a detailed analysis of the commutation intervals of the proposed circuit are given. The experimental waveforms observed in the laboratory verify the validity of the analysis.

Surface explosive instability for high frequency waves

High frequency three-wave nonlinear 'explosive' interaction of the surface modes of a semi-infinite beam-plasma system under no external field is investigated. The conditions that favour nonlinear instability, keep the plasma linearly stable. The beam runs parallel to the surface. If at least one of the three wave vectors of the surface modes is parallel to the beam, explosive interaction at the surface takes place after it has happened in the plasma bulk, provided the bulk waves propagate almost perpendicular to the surface and are of short wavelength. On the other hand if the bulk modes have long wavelength and propagate almost parallel to the surface, the surface modes can 'explode' first.

Doping Dependence of Semiconductor-Metal Transition in InP at High Pressures

The resistivity of selenium-doped n-InP single crystal layers grown by liquid-phase epitaxy with electron concentrations varying from 6.7 x 10$^18$ to 1.8 x 10$^20$ cm$^{-3}$ has been measured as a function of hydrostatic pressure up to 10 GPa. Semiconductor-metal transitions were observed in each case with a change in resistivity by two to three orders of magnitude. The transition pressure p$_c$ decreased monotonically from 7.24 to 5.90 GPa with increasing doping concentration n according to the relation $p_c = p_o [1 - k(n/n_m)^a]$, where n$_m$ is the concentration (per cubic centimetre) of phosphorus donor sites in InP atoms, p$_o$ is the transition pressure at low doping concentrations, k is a constant and $\alpha$ is an exponent found experimentally to be 0.637. The decrease in p$_c$ is considered to be due to increasing internal stress developed at high concentrations of ionized donors. The high-pressure metallic phase had a resistivity (2.02-6.47) x 10$^{-7}$ $\Omega$ cm, with a positive temperature coefficient dependent on doping.

High temperature stability of oxysulfides containing Ce3+ and Y3+ ions

Standard Gibbs energies of formation of oxysulfides of cerium and yttrium from their respective oxedes were determined using solid oxide galvanic cells incorporating calcia-stabilized zirconia as the electrolyte in the temperature range 870–1120 K. The sulfur potential over the electrode containing the oxide and oxysulfide was fixed by a buffer mixture of Ag + Ag2S. A small amount of CaH2 was added to the buffer to generate an equilibrium ratio of H2S and H2 species in a closed system containing the buffer and the electrode. The sulfur potential is transmitted to the electrode via the gas phase. The results can be summarized by the equations 2left angle bracketCeO2right-pointing angle bracket+1/2(S2)→left angle bracketCe2O2Sright-pointing angle bracket+(O2) ΔG°=430600−109·7T(±400)J mol−1 left angle bracketY2O3right-pointing angle bracket+1/2(S2)→left angle bracketY2O2Sright-pointing angle bracket+1/2(O2) ΔG°=114780−1·45T(±200)J mol−1 The values are compared with data reported in the literature. The stability field diagram for the Ce---O---S system has been developed using the results of this study for Ce2O2S and data for other phases from the literature.

Impression creep of zinc and the rate-controlling dislocation mechanism of plastic flow at high temperatures

The impression creep behaviour of zinc is studied in the range 300 to 500 K and the results are compared with the data from conventional creep tests. The steady-state impression velocity is found to exhibit the same stress and temperature dependence as in conventional tensile creep with the same power law stress exponent. Also studied is the effect of indenter size on the impression velocity. The thermal activation parameters for plastic flow at high temperatures derived from a number of testing techniques agree reasonably well. Grain boundary sliding is shown to be unimportant in controlling the rate of plastic flow at high temperatures. It is observed that the Cottrell-Stokes law is obeyed during high-temperature deformation of zinc. It is concluded that a mechanism such as forest intersection involving attractive trees controls the high-temperature flow rather than a diffusion mechanism.