Synthesis and properties of zirconia thin films

Thin films of zirconia have been synthesized using reactive DC magnetron sputtering. It has been found that films with good optical constants, high refractive index (1.9 at 600 nm) and low extinction coefficient can be prepared al ambient temperatures. The optical constants and band gnp and hence the composition nle dependent on the deposition parameters such as target power, rate of deposition and oxygen background pressure. Thermal annealing of the films revealed that tile films showed optical and crystalline inhomogeneity and also large variations in optical constants.

Structure and composition related properties of titania thin films

The dependence of optical constants, structure and composition of titania thin films on the process parameters has been investigated. Films were deposited using both reactive electron beam evaporation and ion Assisted Deposition(IAD). If has been observed that the refractive index of IAD films is higher than that for the reactively deposited films, without much difference in the extinction coefficient. Electron paramagnetic resonance has been used to estimate qualitatively the presence of non-stoichiometry in the films. It has been found that these spectra correlate very well the optical behaviour of the films. X-ray diffraction studies revealed that the neutral oxygen deposited films were stress free, while the IAD films showed tensile stress. The lattice parameters showed anisotropic change with ion beam parameters.

Some unusual features in the Raman spectrum of amorphous-carbon films obtained by pyrolysis of maleic anhydride

Laser micro-Raman spectroscopic measurements were done on the amorphous conducting carbon films obtained from maleic anhydride by pyrolysis process. We have found a predominant broad peak around 1140 cm(-1), in addition to the normally observed peaks in amorphous carbons around 1350 and 1600 cm(-1), and peak of medium intensity around 800 cm(-1). Here we discuss the possibility of conjugated polymer like bond alternating structure which can give rise to these unusual Raman features. (C) 1997 American Institute of Physics.

Effect of porosity on the indentation behaviour of nanoporous alumina films

Anodising aluminium in an acid electrolyte results in a porous alumina film. The pores are uniformly distributed and their structure can be controlled by varying the anodising parameters. In this study, the pore structure of the anodic alumina films is varied systematically by varying the anodising time and a subsequent pore widening chemical etch. The indentation behaviour of the resulting film is studied using a depth sensing nanoindenter. The hardness of the films was found to be decreasing with decreasing solid area fraction. Understanding the deformation behaviour of nanoporous alumina would help tailoring the mechanical properties by tuning the geometry.

Infrared spectroscopic study of LiCoO2 thin films

Site disorder of Co3+ ions in sputtered films of lithium cobaltite has been examined using infrared spectroscopy. Both transmission and reflectance modes have been used to characterize the nature of IR absorption. It is found that Co3+ in the sputtered films occupy two types of octahedral sites that differ in the nature of second-neighbor environment. Li+ ions exhibit two bands, which may arise from tetrahedral and octahedral site occupancies or from the presence of disordered regions in the films. (C) 2002 Elsevier Science (USA).

MOCVD of aluminium oxide films using aluminiurn beta-diketonates as precursors

Deposition of Al2O3 coatings by CVD is of importance because they are often used as abrading material in cemented carbide cutting tools. The conventionally used CVD process for Al2O3 involves the corrosive reactant AlCl3. In this paper, we report on the thermal characterisation of the metalorganic precursors namely aluminium tristetramethyl-heptanedionate [Al(thd)(3)] and aluminium tris-acetylacetonate [Al(acac)(3)] and their application to the CVD of Al2O3 films. Crystalline Al2O3 films were deposited by MOCVD at low temperatures by the pyrolysis of Al(thd)(3) and Al(acac)(3). The films were deposited on a TiN-coated tungsten carbide (TiN/WC) and Si(100) substrates in the temperature range 500-1100degreesC. The as-deposited films were characterised by x-ray diffraction, optical microscopy, scanning and transmission electron microscopy, Auger electron spectroscopy. The observed crystallinity of films grown at low temperatures, their microstructure, and composition may be interpreted in terms of a growth process that involves the melting of the metalorganic precursor on the hot growth surface.

Time Evolution of the Microstructure of VO2(B) Films Deposited on Glass by MOCVD

Thin films of VO2(B), a metastable polymorph of vanadium dioxide, have been grown on glass by low-pressure metalorganic chemical vapor deposition (MOCVD). The films grown for 90 minutes have atypical microstructure, comprising micrometer-sized, island-like entities made up of numerous small, single-crystalline platelets (≅1 μm) emerging orthogonally from larger ones at the center. Microstructure evolution as a function of deposition time has been examined by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The metastable VO2(B) transforms to the stable rutile (R) phase at 550°C in inert ambient, which on cooling convert reversibly to M phase. Electron microscopy shows that annealing leads to the disintegration of the VO2(B) platelets into small crystallites of the rutile phase VO2(R), although the platelet morphology is retained. The magnitude of the jump in resistance at the semiconductor-to-metal, VO2(M)→VO2(R) phase transition depends on the arrangement of polycrystalline platelets in the films.

A study of Al2O3:C films on Si(100) grown by low pressure MOCVD

We report the characterization of carbonaceous aluminium oxide, Al2O3:C, films grown on Si(100) by metalorganic chemical vapor deposition. The focus is on the study of the effects of carbon on the dielectric properties of aluminium oxide in a qualitative manner. The carbon present in the aluminium oxide film derives from aluminium acetylacetonate used as the source of aluminium. As-grown films comprise nanometer-sized grains of alumina (∼ 20–50 nm) in an amorphous carbonaceous matrix, as examined by X-ray diffractometry (XRD) and transmission electron microscopy (TEM). The films are shiny; they are smooth as observed by scanning electron microscopy (SEM). An attempt has been made to explore the defects (viz., oxide charge density) in the aluminium oxide films using room temperature high frequency capacitance – voltage (C-V) and current–voltage (I-V) measurements. The hysteresis and stretch-out in the high frequency C-V plots is indicative of charge trapping. The role of heteroatoms, as characterized by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy, in the transport of charge in Al2O3:C films is discussed.

Growth and study of BaZrO3 thin films by pulsed excimer laser ablation

Thin films of BaZrO3 (BZ) were grown using a pulsed laser deposition technique on platinum coated silicon substrates. Films showed a polycrystalline perovskite structure upon different annealing procedures of in-situ and ex-situ crystallization. The composition analyses were done using Energy dispersive X-ray analysis (EDAX) and Secondary ion mass spectrometry (SIMS). The SIMS analysis revealed that the ZrO2 formation at the right interface of substrate and the film leads the degradation of the device on the electrical properties in the case of ex-situ crystallized films. But the in-situ films exhibited no interfacial formation. The dielectric properties have been studied for the different temperatures in the frequency regime of 40 Hz to 100kHz. The response of the film to external ac stimuli was studied at different temperatures, and it showed that ac conductivity values in the limiting case are correspond to oxygen vacancy motion. The electrical modulus is fitted to a stretched exponential function and the results clearly indicate the presence of the non-Debye type of dielectric relaxation in these materials.

Constitutive Response of Passivated Copper Films: Experiments and Analyses

The constitutive behavior of passivated copper films is studied. Stresses in copper films of thickness ranging from 1000 nm to 40 nm, passivated with silicon oxide on a quartz or silicon substrate, were measured using the curvature method. The thermal cycling spans a temperature range from - 196 to 600°C. It is seen that the strong relaxation at high temperatures normally found in unpassivated films is nonexistent for passivated films. The copper film did not show any rate-dependent effect over a range of heating/cooling rate from 5 to 25°C/min. Further analyses showed that significant strain hardening exists during the course of thermal loading. In particular, the measured stress- temperature response can only be fitted with a kinematic hardening model, if a simple constitutive law within the continuum plasticity framework is to be used. The analytic procedures for extracting the film properties are presented. Implications to stress modeling of copper interconnects in actual devices are discussed.

Electrical properties of ferroelectric YMnO3 films deposited on n-type Si(111) substrates

YMnO3 thin films were grown on an n-type Si substrate by nebulized spray pyrolysis in the metal-ferroelectric-semiconductor (MFS) configuration. The capacitance-voltage characteristics of the film in the MFS structure exhibit hysteretic behaviour consistent with the polarization charge switching direction, with the memory window decreasing with increase in temperature. The density of the interface states decreases with increasing annealing temperature. Mapping of the silicon energy band gap with the interface states has been carried out. The leakage current, measured in the accumulation region, is lower in well-crystallized thin films and obeys a space-charge limited conduction mechanism. The calculated activation energy from the dc leakage current characteristics of the Arrhenius plot reveals that the activation energy corresponds to oxygen vacancy motion.

Studies on the deposition and characterization of silicon oxide films for optical coating applications

Silicon oxide films were deposited by reactive evaporation of SiO. Parameters such as oxygen partial pressure and substrate temperature were varied to get variable and graded index films. Films with a refractive index in the range 1.718 to 1.465 at 550 nm have been successfully deposited. Films deposited using ionized oxygen has the refractive index 1.465 at 550 nm and good UV transmittance like bulk fused quartz. Preparation of graded index films was also investigated by changing the oxygen partial pressure during deposition. A two layer antireflection coating at 1064nm has been designed using both homogeneous and inhomogeneous films and studied their characteristics.