A Simple Charge Model for Symmetric Double-Gate MOSFETs Adapted to Gate-Oxide-Thickness Asymmetry

Surface-potential-based compact charge models for symmetric double-gate metal-oxide-semiconductor field-effect transistors (SDG-MOSFETs) are based on the fundamental assumption of having equal oxide thicknesses for both gates. However, for practical devices, there will always be some amount of asymmetry between the gate oxide thicknesses due to process variations and uncertainties, which can affect device performance significantly. In this paper, we propose a simple surface-potential-based charge model, which is applicable for tied double-gate MOSFETs having same gate work function but could have any difference in gate oxide thickness. The proposed model utilizes the unique so-far-unexplored quasi-linear relationship between the surface potentials along the channel. In this model, the terminal charges could be computed by basic arithmetic operations from the surface potentials and applied biases, and thus, it could be implemented in any circuit simulator very easily and extendable to short-channel devices. We also propose a simple physics-based perturbation technique by which the surface potentials of an asymmetric device could be obtained just by solving the input voltage equation of SDG devices for small asymmetry cases. The proposed model, which shows excellent agreement with numerical and TCAD simulations, is implemented in a professional circuit simulator through the Verilog-A interface and demonstrated for a 101-stage ring oscillator simulation. It is also shown that the proposed model preserves the source/drain symmetry, which is essential for RF circuit design.

Inclusion of body doping in compact models for fully-depleted common double gate MOSFET adapted to gate-oxide thickness asymmetry

Since it is difficult to find the analytical solution of the governing Poisson equation for double gate MOSFETs with the body doping term included, the majority of the compact models are developed for undoped-body devices for which the analytical solution is available. Proposed is a simple technique to included a body doping term in such surface potential based common double gate MOSFET models also by taking into account any differences between the gate oxide thickness. The proposed technique is validated against TCAD simulation and found to be accurate as long as the channel is fully depleted.

Effect of Thickness on The Optical Properties Change in Bi/As2S3 Bilayer Thin Films

Bilayer thin films of Bi/As2S3 were prepared from Bi and As2S3 by thermal evaporation technique under high vacuum. We have prepared three bilayer films of 905nm, 910nm and 915nm thickness with with As2S3 as bottom layer (900nm) and Bi as top layer (5,10,15 nm). We have compared the optical changes due to the thickness variation of Bi layer on As2S3 film. The changes were characterized by FTIR and XPS techniques.

Effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes

In this paper we present the effect of thickness variation of hole injection and hole blocking layers on the performance of fluorescent green organic light emitting diodes (OLEDs). A number of OLED devices have been fabricated with combinations of hole injecting and hole blocking layers of varying thicknesses. Even though hole blocking and hole injection layers have opposite functions, yet there is a particular combination of their thicknesses when they function in conjunction and luminous efficiency and power efficiency are maximized. The optimum thickness of CuPc (Copper(II) phthalocyanine) layer, used as hole injection layer and BCP (2,9 dimethyl-4,7-diphenyl-1,10-phenanthroline) used as hole blocking layer were found to be 18 nm and 10 nm respectively. It is with this delicate adjustment of thicknesses, charge balancing is achieved and luminous efficiency and power efficiency were optimized. The maximum luminous efficiency of 3.82 cd/A at a current density of 24.45 mA/cm(2) and maximum power efficiency of 2.61 lm/W at a current density of 5.3 mA/cm(2) were achieved. We obtained luminance of 5993 cd/m(2) when current density was 140 mA/cm(2). The EL spectra was obtained for the LEDs and found that it has a peaking at 524 nm of wavelength. (C) 2012 Elsevier B.V. All rights reserved.

Influence of GaN underlayer thickness on structural, electrical and optical properties of InN films grown by PAMBE

We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.

Methodology for Pavement Design Reliability and Back Analysis Using Markov Chain Monte Carlo Simulation

Given the increasing cost of designing and building new highway pavements, reliability analysis has become vital to ensure that a given pavement performs as expected in the field. Recognizing the importance of failure analysis to safety, reliability, performance, and economy, back analysis has been employed in various engineering applications to evaluate the inherent uncertainties of the design and analysis. The probabilistic back analysis method formulated on Bayes' theorem and solved using the Markov chain Monte Carlo simulation method with a Metropolis-Hastings algorithm has proved to be highly efficient to address this issue. It is also quite flexible and is applicable to any type of prior information. In this paper, this method has been used to back-analyze the parameters that influence the pavement life and to consider the uncertainty of the mechanistic-empirical pavement design model. The load-induced pavement structural responses (e.g., stresses, strains, and deflections) used to predict the pavement life are estimated using the response surface methodology model developed based on the results of linear elastic analysis. The failure criteria adopted for the analysis were based on the factor of safety (FOS), and the study was carried out for different sample sizes and jumping distributions to estimate the most robust posterior statistics. From the posterior statistics of the case considered, it was observed that after approximately 150 million standard axle load repetitions, the mean values of the pavement properties decrease as expected, with a significant decrease in the values of the elastic moduli of the expected layers. An analysis of the posterior statistics indicated that the parameters that contribute significantly to the pavement failure were the moduli of the base and surface layer, which is consistent with the findings from other studies. After the back analysis, the base modulus parameters show a significant decrease of 15.8% and the surface layer modulus a decrease of 3.12% in the mean value. The usefulness of the back analysis methodology is further highlighted by estimating the design parameters for specified values of the factor of safety. The analysis revealed that for the pavement section considered, a reliability of 89% and 94% can be achieved by adopting FOS values of 1.5 and 2, respectively. The methodology proposed can therefore be effectively used to identify the parameters that are critical to pavement failure in the design of pavements for specified levels of reliability. DOI: 10.1061/(ASCE)TE.1943-5436.0000455. (C) 2013 American Society of Civil Engineers.

Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films

CdTe thin films of 500 thickness prepared by thermal evaporation technique were analyzed for leakage current and conduction mechanisms. Metal-insulator-metal (MIM) capacitors were fabricated using these films as a dielectric. These films have many possible applications, such as passivation for infrared diodes that operate at low temperatures (80 K). Direct-current (DC) current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed on these films. Furthermore, the films were subjected to thermal cycling from 300 K to 80 K and back to 300 K. Typical minimum leakage currents near zero bias at room temperature varied between 0.9 nA and 0.1 mu A, while low-temperature leakage currents were in the range of 9.5 pA to 0.5 nA, corresponding to resistivity values on the order of 10(8) a''broken vertical bar-cm and 10(10) a''broken vertical bar-cm, respectively. Well-known conduction mechanisms from the literature were utilized for fitting of measured I-V data. Our analysis indicates that the conduction mechanism in general is Ohmic for low fields < 5 x 10(4) V cm(-1), while the conduction mechanism for fields > 6 x 10(4) V cm(-1) is modified Poole-Frenkel (MPF) and Fowler-Nordheim (FN) tunneling at room temperature. At 80 K, Schottky-type conduction dominates. A significant observation is that the film did not show any appreciable degradation in leakage current characteristics due to the thermal cycling.

Nonquasi-static charge model for common double-gate MOSFETs adapted to gate oxide thickness asymmetry

With the unique quasi-linear relationship between the surface potentials along the channel, recently we have proposed a quasi-static terminal charge model for common double-gate MOSFETs, which might have asymmetric gate oxide thickness. In this brief, we extend this concept to develop the nonquasi-static (NQS) charge model for the same by solving the governing continuity equations. The proposed NQS model shows good agreement against TCAD simulations and appears to be useful for efficient circuit simulation.

Stabilization of diborane(4) by transition metal fragments and a novel metal to pi Dewar-Chatt-Duncanson model of back donation

The feasibility of using transition metal fragments to stabilize B2H4 in planar configuration by donating 2 electrons to the boron moiety is investigated. Building upon the existing theoretical and experimental data and aided by the isolobal analogy, the model transition metal complexes Cr(CO)(4)B2H4 (6), Mn(CO)-CpB2H4 (7), Fe(CO)(3)B2H4 (8) and CoCpB2H4 (9) are chosen to illustrate this unique bonding feature bond strengthening with pi-back donation. Other possible types of complexes with B2H4 and the metal fragment are also explored and the energies are compared. One of the low energy isomers wherein the planar B2H4 interacts with the metal fragment in an in-plane fashion represents a unique case study for the Dewar-Chatt-Duncanson model. In this complex the back-donation from the metal fills the p bonding orbital between the two boron atoms thus forming a B=B double bond.

Optimization of HfO2 films for high transconductance back gated graphene transistors

Hafnium dioxide (HfO2) films, deposited using electron beam evaporation, are optimized for high performance back-gated graphene transistors. Bilayer graphene is identified on HfO2/Si substrate using optical microscope and subsequently confirmed with Raman spectroscopy. Back-gated graphene transistor, with 32 nm thick HfO2 gate dielectric, has been fabricated with very high transconductance value of 60 mu S. From the hysteresis of the current-voltage characteristics, we estimate the trap density in HfO2 to be in the mid 10(11)/cm(2) range, comparable to SiO2.

Physics and chemistry of CdTe/CdS thin film heterojunction photovoltaic devices: fundamental and critical aspects

Among the armoury of photovoltaic materials, thin film heterojunction photovoltaics continue to be a promising candidate for solar energy conversion delivering a vast scope in terms of device design and fabrication. Their production does not require expensive semiconductor substrates and high temperature device processing, which allows reduced cost per unit area while maintaining reasonable efficiency. In this regard, superstrate CdTe/CdS solar cells are extensively investigated because of their suitable bandgap alignments, cost effective methods of production at large scales and stability against proton/electron irradiation. The conversion efficiencies in the range of 6-20% are achieved by structuring the device by varying the absorber/window layer thickness, junction activation/annealing steps, with more suitable front/back contacts, preparation techniques, doping with foreign ions, etc. This review focuses on fundamental and critical aspects like: (a) choice of CdS window layer and CdTe absorber layer; (b) drawbacks associated with the device including environmental problems, optical absorption losses and back contact barriers; (c) structural dynamics at CdS-CdTe interface; (d) influence of junction activation process by CdCl2 or HCF2Cl treatment; (e) interface and grain boundary passivation effects; (f) device degradation due to impurity diffusion and stress; (g) fabrication with suitable front and back contacts; (h) chemical processes occurring at various interfaces; (i) strategies and modifications developed to improve their efficiency. The complexity involved in understanding the multiple aspects of tuning the solar cell efficiency is reviewed in detail by considering the individual contribution from each component of the device. It is expected that this review article will enrich the materials aspects of CdTe/CdS devices for solar energy conversion and stimulate further innovative research interest on this intriguing topic.

Spatial variations of effective elastic thickness over the Ninetyeast Ridge and implications for its structure and tectonic evolution

We present new data on the strength of oceanic lithosphere along the Ninetyeast Ridge (NER) from two independent methods: spectral analysis (Bouguer coherence) using the fan wavelet transform technique, and spatial analysis (flexure inversion) with the convolution method. The two methods provide effective elastic thickness (T-e) patterns that broadly complement each other, and correlate well with known surface structures and regional-scale features. Furthermore, our study presents a new high resolution database on the Moho configuration, which obeys flexural isostasy, and exhibit regional correlations with the T-e variations. A continuous ridge structure with a much lower T-e value than that of normal oceanic lithosphere provides strong support for the hotspot theory. The derived T-e values vary over the northern (higher T-e similar to 10-20 km), central (anomalously low T-e similar to 0-5 km), and southern (low T-e similar to 5 km) segments of the NER. The lack of correlation of the T-e value with the progressive aging of the lithosphere implies differences in thermo-mechanical setting of the crust and underlying mantle in different parts of the NER, again indicating diversity in their evolution. The anomalously low T-e and deeper Moho (similar to 22 km) estimates of the central NER (between 0.5 degrees N and 17 degrees S) are attributed to the interaction of a hotspot with the Wharton spreading ridge that caused significant thermal rejuvenation and hence weakening of the lithosphere. The higher mechanical strength values in the northern NER (north of 0.5 degrees N) may support the idea of off-ridge emplacement and a relatively large plate motion at the time of volcanism. The low T-e and deeper Moho (similar to 22 km) estimates in the southern part (south of 17 degrees S) suggest that the lithosphere was weak and therefore younger at the time of volcanism, and this supports the idea that the southern NER was emplaced on the edge of the Indian plate. (C) 2013 Elsevier B.V. All rights reserved.

Flow resistance network analysis of the back-pressure of automotive mufflers

Complexity of mufflers generally introduces considerable pressure drop, which affects the engine performance adversely. Not much literature is available for pressure drop across perforates. In this paper, the stagnation pressure drop across perforated muffler elements has been measured experimentally and generalized expressions have been developed for the pressure loss across cross-flow expansion and cross-flow contraction elements. A flow resistance model available in the literature has been made use of to analytically determine the flow distribution and thereby the pressure drop of mufflers. A generalized expression has been derived here for evaluation of the equivalent flow resistance for parallel flow paths. Expressions for flow resistance across perforated elements, derived by means of flow experiments, have been implemented in the flow resistance network. The results have been validated with experimental data. Thus, the newly developed integrated flow resistance networks would enable us to determine the normalized stagnation pressure drop of commercial automotive mufflers, thus enabling an efficient flow-acoustic design of silencing systems.

Tectonic inheritance of the Indian Shield: New insights from its elastic thickness structure

A new evaluation of the elastic thickness (Te) structure of the Indian Shield, derived from isotropic fan wavelet methodology, documents spatial variations of lithospheric deformation in different tectonic provinces correlated with episodic tectono-thermal events. The Te variations corroborated by shear velocity, crustal thickness, and seismogenic thickness reveal the heterogeneous rheology of the Indian lithosphere. The thinned, attenuated lithosphere beneath Peninsular India is considered to be the reason for its mechanically weak strength (<30 km), where a decoupled crust-mantle rheology under different surface/subsurface loading structures may explain the prominent low Te patterns. The arcuate Te structure of the Western Dharwar province and a NNE-trending band of low Te anomaly in the Southern Granulite Terrane are intriguing patterns. The average Te values (40-50 km) of the Central Indian Tectonic Zone, the Bastar Craton, and the northern Eastern Ghats Mobile Belt are suggestive of old, stable, Indian lithosphere, which was not affected by any major tectono-thermal events after cratonic stabilization. We propose that the anomalously high Te (60-85 km) and high S-wave velocity zone to the north of the Narmada-Son Lineament, mainly in NW Himalaya, and the northern Aravalli and Bundelkhand Cratons, suggest that Archean lithosphere characterized by a high velocity mantle keel supports the orogenic topographic loads in/near the Himalaya. The Te map clearly segments the volcanic provinces of the Indian Shield, where the signatures of the Reunion, Marion, and Kerguelen hotspots are indicated by significantly low Te patterns that correlate with plume- and rift-related thermal and mechanical rejuvenation, magmatic underplating, and crustal necking. The correlations between Te variations and the occurrence of seismicity over seismically active zones reveal different causal relationships, which led to the current seismogenic zonation of the Indian Shield. (C) 2013 Elsevier B.V. All rights reserved.