98 resultados para Threshold numbers


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Differential scanning calorimetry studies have been performed on GexSb5Se95-x (12.5≤x≤35) and GexSb10Se90-x (10≤x≤32.5) glasses. The observed dependence of the glass transition temperature on the mean coordination number up to =2.60 and the maxima in the glass transition temperature and the activation energy of crystallisation at =2.65 have been interpreted in terms of the mechanical and chemical thresholds occuring near these compositions.

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Transpiration cooling over a flat plate at hypersonic Mach numbers is analyzed using Navier-Stokes equations, without the assumption of an isothermal wall with a prescribed wall temperature. A new criterion is proposed for determining a relevant range of blowing rates, which is useful in the parametric analysis. The wall temperature is found to decrease with the increasing blowing rate, but this effect is not uniform along the plate. The effect is more pronounced away from the leading edge. The relative change in the wall temperature is affected stronger by blowing at high Reynolds numbers. (AIAA)

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Reduced expression of CCR5 on target CD4(+) cells lowers their susceptibility to infection by R5-tropic HIV-1, potentially preventing transmission of infection and delaying disease progression. Binding of the HIV-1 envelope (Env) protein gp120 with CCR5 is essential for the entry of R5 viruses into target cells. The threshold surface density of gp120-CCR5 complexes that enables HIV-1 entry remains poorly estimated. We constructed a mathematical model that mimics Env-mediated cell-cell fusion assays, where target CD4(+)CCR5(+) cells are exposed to effector cells expressing Env in the presence of a coreceptor antagonist and the fraction of target cells fused with effector cells is measured. Our model employs a reaction network-based approach to describe protein interactions that precede viral entry coupled with the ternary complex model to quantify the allosteric interactions of the coreceptor antagonist and predicts the fraction of target cells fused. By fitting model predictions to published data of cell-cell fusion in the presence of the CCR5 antagonist vicriviroc, we estimated the threshold surface density of gp120-CCR5 complexes for cell-cell fusion as similar to 20 mu m(-2). Model predictions with this threshold captured data from independent cell-cell fusion assays in the presence of vicriviroc and rapamycin, a drug that modulates CCR5 expression, as well as assays in the presence of maraviroc, another CCR5 antagonist, using sixteen different Env clones derived from transmitted or early founder viruses. Our estimate of the threshold surface density of gp120-CCR5 complexes necessary for HIV-1 entry thus appears robust and may have implications for optimizing treatment with coreceptor antagonists, understanding the non-pathogenic infection of non-human primates, and designing vaccines that suppress the availability of target CD4(+)CCR5(+) cells.

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a-Si:H/InSb structures have been fabricated by glow discharge deposition of a-Si on bulk InSb substrates in hydrogen atmosphere. The structure shows interesting switching properties, toggling between a high resistance and a conducting state with OFF to ON resistance ratio of 10(6) at remarkably low threshold voltages of 0.3 V at room temperature. The low threshold voltage for this structure, as compared to the higher switching threshold of about 30 V for other a-Si based structures, has been achieved by the use of InSb as a substrate, capable of high carrier injection. (C) 1997 Published by Elsevier Science Ltd.

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An in-situ power monitoring technique for Dynamic Voltage and Threshold scaling (DVTS) systems is proposed which measures total power consumed by load circuit using sleep transistor acting as power sensor. Design details of power monitor are examined using simulation framework in UMC 90nm CMOS process. Experimental results of test chip fabricated in AMS 0.35µm CMOS process are presented. The test chip has variable activity between 0.05 and 0.5 and has PMOS VTH control through nWell contact. Maximum resolution obtained from power monitor is 0.25mV. Overhead of power monitor in terms of its power consumption is 0.244 mW (2.2% of total power of load circuit). Lastly, power monitor is used to demonstrate closed loop DVTS system. DVTS algorithm shows 46.3% power savings using in-situ power monitor.

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A three-component accelerometer balance system is used to study the drag reduction effect of an aerodisc on large angle blunt cones flying at hypersonic Mach numbers. Measurements in a hypersonic shock tunnel at a freestream Mach number of 5.75 indicate more than 50% reduction in the drag coefficient for a 120degrees apex angle blunt cone with a forward facing aerospike having a flat faced aerodisc at moderate angles of attack. Enhancement of drag has been observed for higher angles of attack due to the impingement of the flow separation shock on the windward side of the cone. The flowfields around the large angle blunt cone with aerospike assembly flying at hypersonic Mach numbers are also simulated numerically using a commercial CFD code. The pressure and density levels on the model surface, which is under the aerodynamic shadow of the flat disc tipped spike, are found very low and a drag reduction of 64.34% has been deduced numerically.

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Given n is an element of Z(+) and epsilon > 0, we prove that there exists delta = delta(epsilon, n) > 0 such that the following holds: If (M(n),g) is a compact Kahler n-manifold whose sectional curvatures K satisfy -1 -delta <= K <= -1/4 and c(I)(M), c(J)(M) are any two Chern numbers of M, then |c(I)(M)/c(J)(M) - c(I)(0)/c(J)(0)| < epsilon, where c(I)(0), c(J)(0) are the corresponding characteristic numbers of a complex hyperbolic space form. It follows that the Mostow-Siu surfaces and the threefolds of Deraux do not admit Kahler metrics with pinching close to 1/4.

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I-V studies indicate a composition dependent switching behavior (Memory or Threshold) in bulk Al20AsxTe80−x glasses, which is determined by the coordination and composition of aluminum. Investigations on temperature and thickness dependence of switching and structural studies on switched samples suggest thermal and electronic mechanisms of switching for the memory and threshold samples, respectively. The present results also show that these samples have a wider composition range of threshold behavior with lower threshold voltages compared to other threshold samples.

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The flow in a square cavity is studied by solving the full Navier–Stokes and energy equations numerically, employing finite-difference techniques. Solutions are obtained over a wide range of Reynolds numbers from 0 to 50000. The solutions show that only at very high Reynolds numbers (Re [gt-or-equal, slanted] 30000) does the flow in the cavity completely correspond to that assumed by Batchelor's model for separated flows. The flow and thermal fields at such high Reynolds numbers clearly exhibit a boundary-layer character. For the first time, it is demonstrated that the downstream secondary eddy grows and decays in a manner similar to the upstream one. The upstream and downstream secondary eddies remain completely viscous throughout the range of Reynolds numbers of their existence. It is suggested that the behaviour of the secondary eddies may be characteristic of internal separated flows.

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The magnetic properties of iron-filled multi-walled carbon nanotubes dispersed in polystyrene (Fe-MWNT/PS) have been investigated as a function of Fe-MWNT concentration (0.1-15 wt%) from 300 to 10 K. Electron microscopy studies indicate that Fe nanorods (aspect ratio similar to 5) remain trapped at various lengths of MWNT and are thus, prevented from oxidation as well as aggregation. The magnetization versus applied field (M-H loop) data of 0.1 wt% of Fe-MWNTs in PS show an anomalous narrowing at low temperatures which is due to the significant contribution from shape anisotropy of Fe nanorods. The remanence shows a threshold feature at 1 wt%. The enhanced coercivity shows a maximum at 1 wt% due to the dominant dipolar interactions among Fe nanorods. Also the squareness ratio shows a maximum at 1 wt%.

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A generalized power tracking algorithm that minimizes power consumption of digital circuits by dynamic control of supply voltage and the body bias is proposed. A direct power monitoring scheme is proposed that does not need any replica and hence can sense total power consumed by load circuit across process, voltage, and temperature corners. Design details and performance of power monitor and tracking algorithm are examined by a simulation framework developed using UMC 90-nm CMOS triple well process. The proposed algorithm with direct power monitor achieves a power savings of 42.2% for activity of 0.02 and 22.4% for activity of 0.04. Experimental results from test chip fabricated in AMS 350 nm process shows power savings of 46.3% and 65% for load circuit operating in super threshold and near sub-threshold region, respectively. Measured resolution of power monitor is around 0.25 mV and it has a power overhead of 2.2% of die power. Issues with loop convergence and design tradeoff for power monitor are also discussed in this paper.