Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment

Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clearly show passivation of defects on the surface as well as in the bulk region. The passivation of various recombination centers in the bulk is attributed to the formation of hydrogen-impurity complexes by diffusion of hydrogen ions from the plasma a-Si:H acts as a protective cap layer and prevents surface degradation which is usually encountered by bare exposure to hydrogen plasma. An enhancement in luminescence intensity up to 20 times is seen due to the passivation of nonradiative recombination centers. The passivation efficiency is found to improve with an increase in a-Si:H deposition temperature. The relative passivation efficiency of donors and acceptors by hydrogen in undoped and Te-compensated p-GaSb has been evaluated by CL and by the temperature dependence of photoluminescence intensities. Most notably, effective passivation of minority dopants in tellurium compensated p-GaSb is evidenced for the first time. (C) 1996 American Institute of Physics.

''Phase reversal'' of non-resonant microwave absorption in superconducting YBaCuO/CuO powder mixtures

Non-resonant microwave absorption is studied as a function of temperature and composition in superconducting YBa2Cu3O7/CuO ceramic composite samples. In pure YBa2Cu3O7 only normal field dependence of the absorption is observed, where as in composites an anomalous non-monotonic field dependence is seen. The results are explained using an extended resistively shunted junction model and invoking the occurrence of junctions with phase difference psi(0) such that pi/2 < psi(0) < 3 pi/2. Copyright (C) 1996 Elsevier Science Ltd

Substitution of chromium for univalent copper in superconducting Pb2Sr2(Ca,Y)Cu3O8+delta

Following considerations of geometry and the similarity between chromate and carbonate groups in terms of size and charge, we have investigated the possibility of replacing the two-coordinate Cu-I in superconducting lead cuprates of the general formula Pb2Sr2(Ca, Y)CU3O8 by Cr. A high-resolution electron microscopy study coupled with energy dispersive X-ray analysis on small crystals of the title phases suggests that between 10 and 15% of the Cu-I can be replaced by Cr. While from the present structural study using HRTEM and Rietveld refinement of X-ray powder data we are unable to precisely obtain the oxidation state and oxygen coordination of Cr, we suggest in analogy with Cr substitution in other similar cuprates that in the title phases (CuO2)-O-I rods are partially replaced by tetrahedral CrO42- groups. Infrared spectroscopy supports the presence of CrO42- groups. The phases Pb1.75Sr2Ca0.2Y0.8O8+delta and Pb1.75Sr2Ca0.2Y0.8CCu2.85Cr0.15O8+delta are superconducting as-prepared, but the substitution of Cr for Cu-I results in a decrease of the Te as well as the superconducting volume fraction. (C) 1996 Academic Press, lnc.

Electrical characterization of surface defects in GaSb created by hydrogen plasma

Using steady state and transient capacitance measurements, the electrical characteristics of a defect layer on the surface of bulk GaSb created during the hydrogen plasma treatment is presented. The trap density, activation energies, and the thickness of the defect layer have been calculated. The trap densities are comparable in magnitude to the carrier concentration. The defects introduce multiple energy levels in the band gap. Typical defect layer thicknesses range from a few angstroms to a fraction of a micron. © 1995 American Institute of Physics.

Superconducting properties of Tl1?yPbyCaSr2Cu2O7: Role of Pb and oxygen stoichiometry

In the Tl1-yPbyCaSr2Cu2O7 system, monophasic superconducting compositions are formed in the range 0.25 < y < 0.60 and the minimum Pb content required to stabilize the tetragonal 1122 phase is about 25%. Maximum Tc is found when y = 0.5, at which composition the hole concentration is optimal. Metallic compositions of Tl1?yPbyCaSr2Cu2O7 (y = 0.25) and Tl0.75Pb0.25Y1?xCaxSr2Cu2O7 (0.80 less-than-or-equals, slant X less-than-or-equals, slant 1.0) become superconducting on decreasing the oxygen content by vacuum annealing.

Structure–property relationship in superconducting cuprates

An examination of the structure and superconducting properties of the various families of cuprates suggests several interesting structural commonalities. Relations between some of the structural parameters of the cuprates and the superconducting transition temperature, T-c, provide useful insights. Variations of T-c on the hole concentration, the in-plane Cu-O and the apical Cu-O distances, as well as the Madelung potentials and bond valence sums are particularly noteworthy. The Cu-O charge-transfer energy appears to be fundamental in determining the properties of cuprates.

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from the C-V characteristics. Layers grown from antimony rich melts always exhibit p-type conductivity. In contrast, a type conversion from p- to n- was observed in layers grown from gallium rich melts below 400 degrees C. The electron mobility of undoped n-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated.

Nonresonant microwave absorption studies of surface passivation of superconducting YBa2Cu3O7−δ thin films

The surfaces of laser ablated thin films of YBa2Cu3O7?? have been passivated with about 100 Å thick textured layer of Ca0.95Sr0.025Ba0.025Zr0.98Ta0.01Ti0.01O3. It is shown that this low loss dielectric material preserves the quality of the surface and also prolongs the aging process. The films (both passivated and as?deposited) have been studied for degradation on exposure to atmosphere and also on dipping directly in water. The technique of nonresonant microwave absorption is used to study the effects and extent of degradation in these films. © 1995 American Institute of Physics.

Superconducting YBa2Cu3O7-delta thick films on Ba2RETaO6 (RE=Pr, Nd, Eu, and Dy) substrates

Thick films of YBa2Cu3O7-delta fabricated on polycrystalline Ba2RETaO6 (where RE= Pr, Nd, Eu, and Dy) substrates by dip-coating and partial melting techniques are textured and c-axis oriented, showing predominantly (00l) orientation. All the thick films show a superconducting zero resistance transition of 90 K. SEM studies clearly indicate platelike and needlelike grain growth over a wide area of the thick films. The values of the critical current density for these thick films are similar to 10(4) A/cm(2) at 77 K as determined by the nonresonant R.F. absorption method. Various processing conditions that affect the critical current density of thick films are also discussed.

Raman evidence for the superconducting gap and spin-phonon coupling in the superconductor Ca( Fe0.95Co0.05)(2)As-2

Inelastic light scattering studies on a single crystal of electron-doped Ca(Fe0.95Co0.05)(2)As-2 superconductor, covering the tetragonal-to-orthorhombic structural transition as well as the magnetic transition at T-SM similar to 140 K and the superconducting transition temperature T-c similar to 23 K, reveal evidence for superconductivity-induced phonon renormalization. In particular, the phonon mode near 260 cm(-1) shows hardening below T-c, signaling its coupling with the superconducting gap. All three Raman active phonon modes show anomalous temperature dependence between room temperature and T-c, i.e. the phonon frequency decreases with lowering temperature. Further, the frequency of one of the modes shows a sudden change in temperature dependence at TSM. Using first-principles density functional theory based calculations, we show that the low temperature phase (T-c < T < T-SM) exhibits short-ranged stripe antiferromagnetic ordering, and estimate the spin-phonon couplings that are responsible for these phonon anomalies.

Radiation induced modifications on microstructure and related properties of high temperature superconductor YBCO

Role of swift heavy ion irradiation on the modification of transport and structural properties of high temperature superconductors is studied. Good quality YBCO thin films prepared by high pressure oxygen sputtering and laser ablation were used in this investigation. Resistivity and atomic force microscopy (AFM) were mainly used to probe superconducting and microstructural modifications resulted from the irradiation of high energy and heavy ions like 100 MeV oxygen and 200 MeV silver. Radiation induced sputtering or erosion is likely to be a major disastrous component of such high energy irradiation that could be powerful in masking phase coherence effects, atleast in grain boundaries. The extent of damage/nature of defects other than columnar defects produced by swift heavy ions is discussed in the light of AFM measurements. The effect of high energy oxygen ion irradiation is anomalous. A clear annealing effect at higher doses is seen. (C) 1999 Elsevier Science B.V. All rights reserved.

Size effect on the superconducting transition of embedded lead particles in an Al-Cu-V amorphous matrix

We have synthesized specimens of nanometric lead dispersion in a glassy Al-Cu-V matrix by rapid solidification of the corresponding melt. The microstructure has been designed to avoid superconducting percolation due to coupling of the neighboring particles by the proximity effect. Using these specimens, we have determined quantitatively the effect of size of the ultrafine lead particles on the superconducting transition. (C) 1999 American Institute of Physics. [S0003-6951(99)02037-9].

The studies on micro-structural defects in deformed composite matrix of Al-Si-Mg and SiC

Detailed Fourier line shape analysis has been performed on three different compositions of the composite matrix of Al-Si-Mg and SiC. The alloy composition in wt% is Al-7%Si, 0.35%Mg, 0.14%Fe and traces of copper and titanium (similar to 0.01%) with SiC varying from 0 to 30wt% in three steps i.e., 0, 10 and 30wt%. The line shift analysis has been performed by considering 111, 200, 220, 311 and 222 reflections after estimating their relative shift. Peak asymmetry analysis has been performed considering neighbouring 111 and 200 reflections and Fourier line shape analysis has been performed after considering the multiple orders 111 and 222, 200 and 400 reflections. Combining all these three analyses it has been found that the deformation stacking faults both intrinsic alpha' and extrinsic alpha " are absent in this alloy system whereas the deformation twin beta has been found to be positive and increases with the increase of SiC concentration. So, like other Al-base alloys this ternary alloy also shows high stacking fault energy, and the addition of SiC introduces deformation twin which increases with its concentration in the deformed lattices.

The role of defects in carrier type reversal in bismuth doped Ge-Se glasses by photoluminescence spectroscopy

The role played by defects in bringing out n-type conduction in Ge20Se80-xBix and Ge20Se70-xBixTe10 glasses is using investigated photoluminescence (PL) spectroscopy. It was found that for both the systems, the compositions at lower Bi content exhibit luminescence with fine features associated while the compositions that show n-type conduction do not exhibit luminescence. The identification of the associated fine features, carried out by deconvoluting the experimental spectra, reveals that Bi addition brings out a relative diminishing in D+ defects as compared to D- ones. The study gives an overall indication for the role played by native defects in bringing out n-type conduction in Bi-doped glasses.