An Empirical Study of Synthesis of Multiple State Devices by Engineering Designers

Automated synthesis of mechanical designs is an important step towards the development of an intelligent CAD system. Research into methods for supporting conceptual design using automated synthesis has attracted much attention in the past decades. The research work presented here is based on an empirical study of the process of synthesis of multiple state mechanical devices. As a background to the work, the paper explores concepts of what mechanical device, state, single state and multiple state are, and in the context of the above observational studies, attempts to identify the outstanding issues for supporting multiple state synthesis of mechanical devices.

Optimal Exact-Regenerating Codes for Distributed Storage at the MSR and MBR Points via a Product-Matrix Construction

Regenerating codes are a class of distributed storage codes that allow for efficient repair of failed nodes, as compared to traditional erasure codes. An [n, k, d] regenerating code permits the data to be recovered by connecting to any k of the n nodes in the network, while requiring that a failed node be repaired by connecting to any d nodes. The amount of data downloaded for repair is typically much smaller than the size of the source data. Previous constructions of exact-regenerating codes have been confined to the case n = d + 1. In this paper, we present optimal, explicit constructions of (a) Minimum Bandwidth Regenerating (MBR) codes for all values of [n, k, d] and (b) Minimum Storage Regenerating (MSR) codes for all [n, k, d >= 2k - 2], using a new product-matrix framework. The product-matrix framework is also shown to significantly simplify system operation. To the best of our knowledge, these are the first constructions of exact-regenerating codes that allow the number n of nodes in the network, to be chosen independent of the other parameters. The paper also contains a simpler description, in the product-matrix framework, of a previously constructed MSR code with [n = d + 1, k, d >= 2k - 1].

Coupling of High Voltage AC Power Line Fields to Metallic Pipelines

In the recent years, there has been a trend to run metallic pipelines carrying petroleum products and high voltage AC power lines parallel to each other in a relatively narrow strip of land. Due to this sharing of the right-of-way, verhead AC power line electric field may induce voltages on the metallic pipelines running in close vicinity leading to serious adverse effects. In this paper, the induced voltages on metallic pipelines running in close vicinity of high voltage power transmission lines have been computed. Before computing the induced voltages, an optimum configuration of the phase conductors based on the lowest conductor surface gradient and field under transmission line has been arrived at. This paper reports the conductor surface field gradients calculated for the various configurations. Also the electric fields under transmission line, for single circuit and double circuit (various phase arrangements) have been analyzed. Based on the above results, an optimum configuration giving the lowest field under the power line as well as the lowest conductor surface gradient has been arrived at and for this configuration, induced voltage on the pipeline has been computed using the Charge Simulation Method (CSM). For comparison, induced voltages on the pipeline has been computed for the various other phase configurations also.

Gibbs free energies of formation of indium (III) oxide and sulphate

Emf measurements on the galvanic cell Pt, Ta, In + In,O, / Tho,-Y,03 / Cu + C+O, Pt were used to obtain the standard free energy of formation of 1%03fr om 600 to 900°C. Differential thermal analysis was used to detect the decomposition of In2(S0,), under controlled SO2 + O2 + Ar mixtures in thqtemperature range 640-8wC. X-ray diffraction analysis indicated that the decomposition product was 1%03 without an oxywlphate intermediate. The following equations were obtained for the variation of the standard free-energy change(Jlmole) with temperature:

Internal displacement reactions in multicomponent oxides: Part I. Line compounds with narrow homogeneity range

Structure and phase transition of LaO1−xF1+2x, prepared by solid-state reaction of La2O3 and LaF3, was investigated by X-ray powder diffraction and differential scanning calorimetry for both positive and negative values of the nonstoichiometric parameter x. The electrical conductivity was investigated as a function of temperature and oxygen partial pressure using AC impedance spectroscopy. Fluoride ion was identified as the migrating species in LaOF by coulometric titration and transport number determined by Tubandt technique and EMF measurements. Activation energy for conduction in LaOF was 58.5 (±0.8) kJ/mol. Conductivity increased with increasing fluorine concentration in the oxyfluoride phase, suggesting that interstitial fluoride ions are more mobile than vacancies. Although the values of ionic conductivity of cubic LaOF are lower, the oxygen partial pressure range for predominantly ionic conduction is larger than that for the commonly used stabilized-zirconia electrolytes. Thermodynamic analysis shows that the oxyfluoride is stable in atmospheres containing diatomic oxygen. However, the oxyfluoride phase can degrade with time at high temperatures in atmospheres containing water vapor, because of the higher stability of HF compared with H2O.

New approach to distance relays with quadrilateral polar characteristic for e.h.v.-line protection

A new technique is presented using principles of multisignal relaying for the synthesis of a universal-type quadrilateral polar characteristic. The modus operandi consists in the determination of the phase sequence of a set of voltage phasors and the provision of a trip signal for one sequence while blocking for the other. Two versions, one using ferrite-core logic and another using transistor logic, are described in detail. The former version has the merit of simplicity and has the added advantage of not requiring any d.c. supply. The unit is flexible, as it permits independent control of the characteristic along the resistance and reactance axis through suitable adjustments of replica impedance angles. The maximum operating time is about 20ms for all switching angles, and with faults within 95% of the protected section. The maximum transient overreach is about 8%.

Approximate synthesis formulas for microstrip line with aperture in ground plane

Approximate closed-form expressions for the propagation characteristics of a microstrip line with a symmetrical aperture in its ground plane are reported in this article. Well-known expressions for the characteristic impedance of a regular microstrip line have been modified to incorporate the effect of this aperture. The accuracy of these expressions for various values of substrate thickness, permittivity and line width has been studied in detail by fullwave simulations. This has been further verified by measurements. These expressions are easier to compute and find immense use in the design of broadband filters, tight couplers, power dividers, transformers, delay lines, and matching circuits. A broadband filter with aperture in ground plane is demonstrated in this article. (c) 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.

Effect of power line filter on MOV clamping voltage

Metal oxide varistors (MOV) are popularly used to protect offline electronic equipment against power line transients. The offline switched mode power supplies (SMPS) use power line filters and MOVs in the front-end. The power line filter is used to reduce the conducted noise emission into the power line and the MOVs connected before this line filter and the MOVs connected before this line filter to clamp line transients to safer levels thereby protecting the SMPS. Because of the presence of 'X' capacitors at the input of line filter the MOV clamping voltage is increased. This paper presents one such case and gives theoretical and experimental results. An approximate method to predetermine the magnitude of such clamping voltages is also presented.