Intra-band electron pairing in the presence of a radiation field

A semiconductor with almost overlapping conduction bands b and c is considered. It is found that an attractive interaction leading to superconductivity can be induced between electrons in the conduction band b by a strong radiation field of monochromatic photons whose energy differs slightly from the band gap Ebc. The mechanism is the exchange of a photon and a phonon between the interacting electrons and the interaction is found to be proportional to the photon density.

Photon-Induced Electron Pairing

The earlier work on the possibility of interband electron pairing in the presence of a strong radiation field has been further extended. Some additional terms, neglected earlier, have been taken into account and generalized to a situation where the electron-phonon coupling coefficients for the two conduction bands (valleys) are different. It is found that the pairing interaction is attractive and the strength depends on the photon density.

Shape-Dependent Confinement in Ultrasmall Zero-, One-, and Two-Dimensional PbS Nanostructures

Spatial dimensionality affects the degree of confinement when an electron-hole pair is squeezed from one or more dimensions approaching the bulk exciton Bohr radius (alpha(B)) limit. The etectron-hole interaction in zero-dimensional (0D) dots, one-dimensional (1D) rods/wires, and two-dimensional (2D) wells/sheets should be enhanced by the increase in confinement dimensions in the order 0D > 1D > 2D. We report the controlled synthesis of PbS nanomateriats with 0D, 1D, and 2D forms retaining at least one dimension in the strongly confined regime far below alpha(B) (similar to 10 nm for PbS) and provide evidence through varying the exciton-phonon coupling strength that the degree of confinement is systematically weakened by the loss of confinement dimension. Geometry variations show distinguishable far-field optical polarizations, which could find useful applications in polarization-sensitive devices.

Infrared absorption spectra of As-Se glasses

IR absorption spectra of As-Se glasses have been studied over a wide range of compositions. Various two-phonon, multiphonon (combination tones) and impurity absorptions have been identified. Compositional variation of relative band intensities has been explained in terms of the chemically ordered network model.

Brillouin Scattering by Phonons Renormalized by Two-Magnon Excitations in Ferromagnetic Dielectrics

Brillouin scattering by one-phonon-two-magnon interacting excitations in ferromagnetic dielectrics is discussed. The basic light scattering mechanism is taken to be the modulation of the density-dependent optical dielectric polarizability of the medium by the dynamic strain field generated by the longitudinal acoustic (LA) phonons. The renormalization effects arising from the scattering of phonons by the two-magnon creation-annihilation processes have, however, been taken into account. Via these interactions, the Brillouin components corresponding to the two-magnon excitations are reflected indirectly in the spectrum of the phonon scattered light as line-broadening of the otherwise relatively sharp Brillouin doublet. The present mechanism is shown to be dominant in a clean saturated ferromagnetic dielectric with large magneto-strictive coupling constant, and with the magnetic ions in the orbitally quenched states. Following the linear response theory, an expression has been derived for the spectral density of the scattered light as a function of temperature, scattering angle, and the strength of the externally applied magnetic field. Some estimates are given for the line-width and line-shift of the Brillouin components for certain typical choice of parameters involved. The results are discussed in relation to some available calculations on the ultrasonic attenuation in ferromagnetic insulators at low temperatures.

A Raman study of multiferroic LuMnO3

Magnetic and dielectric measurements confirm the multiferroic nature of LuMnO3. Raman spectra of LuMnO3 have been recorded in the 77-800 K range covering both the antiferromagnetic transition at 90 K and the ferroelectric-paraelectric transition at 750 K. The changes in the phonon modes frequencies and band-widths indicate the presence of phonon-spin coupling in the antiferromagnetically ordered phase. The ferroelectric-paraelectric transition is accompanied by the broadening and disappearance of many of the phonon modes. Some of the phonon modes also show anomalies at the ferroelectric transition.

Radiation induced enhancement of superconductivity

The effect of microwave radiation on the electron-phonon vertex in superconductors is taken into account. This leads to an enhancement of effective pairing interaction and hence to the transition temperature (Tc) which depends on the photon density and the frequency. This prediction is in agreement with recent experimental results.

Femtosecond carrier dynamics and saturable absorption in graphene suspensions

Nonlinear optical properties and carrier relaxation dynamics in graphene, suspended in three different solvents, are investigated using femtosecond (80 fs pulses) Z-scan and degenerate pump-probe spectroscopy at 790 nm. The results demonstrate saturable absorption property of graphene with a nonlinear absorption coefficient, beta of (similar to 2-9) x 10(-8) cm/W. Two distinct time scales associated with the relaxation of photoexcited carriers, a fast one in the range of 130-330 fs (related to carrier-carrier scattering) followed by it slower one in 3.5-4.9 ps range (associated with carrier-phonon scattering) are observed. (C) 2009 American Institute of Physics.

Enhanced dielectric response of ZrO2 upon Ti doping and introduction of O vacancies

We determine the electronic properties and dielectric response of zirconia (ZrO2) with oxygen vacancies (O vacancies) and Ti doping using first-principles density functional theory calculations based on pseudopotentials and a plane wave basis. We find significantly enhanced static dielectric response in zirconia with Ti doping and introduction of oxygen vacancies. Softening of phonon modes are responsible for the enhanced dielectric response of doped samples compared to pure zirconia.

Raman evidence for orbiton-mediated multiphonon scattering in multiferroic TbMnO3

Temperature-dependent Raman spectra of TbMnO3 from 5 to 300 K in the spectral range of 200-1525 cm(-1) show five first-order Raman allowed modes and two high frequency modes. The intensity ratio of the high frequency Raman band to the corresponding first-order Raman mode is nearly constant and high (similar to 0.6) at all temperatures, suggesting an orbiton-phonon mixed nature of the high frequency mode. One of the first-order phonon modes shows anomalous softening below T-N (similar to 46 K), suggesting a strong spin-phonon coupling.

Graphene Analogues of BN: Novel Synthesis and Properties

Enthused by the fascinating properties of graphene, we have prepared graphene analogues of BN by a chemical method with a control on the number of layers. The method involves the reaction of boric acid with urea, wherein the relative proportions of the two have been varied over a wide range. Synthesis with a high proportion of urea yields a product with a majority of 1-4 layers. The surface area of BN increases progressively with the decreasing number of layers, and the high surface area BN exhibits high CO, adsorption, but negligible H, adsorption. Few-layer BN has been solubilized by interaction with Lewis bases. We have used first-principles simulations to determine structure, phonon dispersion, and elastic properties of BN with planar honeycomb lattice-based n-layer forms. We find that the mechanical stability of BN with respect to out-of-plane deformation is quite different from that of graphene, as evident in the dispersion of their flexural modes. BN is softer than graphene and exhibits signatures of long-range ionic interactions in its optical phonons. Finally, structures with different stacking sequences of BN have comparable energies, suggesting relative abundance of slip faults, stacking faults, and structural inhomogeneities in multilayer BN.

Anomalous Raman scattering from phonons and electrons of superconducting FeSe0.82

We report interesting anomalies in the temperature dependent Raman spectra of FeSe0.82 measured from 3 K to 300 K in the spectral range from 60 to 1800 cm(-1) and determine their origin using complementary first-principles density functional calculations. A phonon mode near 100 cm-1 exhibits a sharp increase by similar to 5% in the frequency below a temperature T-s (similar to 100 K) attributed to strong spin-phonon coupling and onset of short-range antiferromagnetic order. In addition, two high frequency modes are observed at 1350 cm-1 and 1600 cm-1, attributed to electronic Raman scattering from (x(2)-y(2)) to xz/yz d-orbitals of Fe. (C) 2010 Elsevier Ltd. All rights reserved.

Raman spectrum of rubidium iodide

Raman spectrum of rubidium iodide has been recorded for the first time using the resonance radiation of mercury (λ 2537 ) as the exciter. The frequencies of the 24p limiting modes (p = 2, the number of non-equivalent atoms in the unit cell), postulated by Raman in 1943, which correspond to the frequencies from the critical points Γ, L and X, have been worked out using the shell model of Cochran, taking into account the nearest and the next-nearest neighbour short-range interactions and the polarization of both the ions. The observed Raman lines have been assigned to the overtones and the combinations of the phonon branches from Γ, L and X.

Recombination and trapping in n-type cobalt-doped germanium

The role of cobalt centers in promoting the recombination and trapping processes in n-type germanium has been investigated. Data on lifetime measurements carried out by the steadystate photoconductivity and photo-magneto-electric methods in the temperature range 145 to 300°K on n-type germanium samples containing cobalt in the concentration range 1·1013 to 5.·014/cm3 are presented. The results are analysed on the basis of Sah-Shockley's multi-level formula to yield the capture cross-sections Sp= (hole capture cross-section at doubly negatively charged center) and Sn-(electron capture cross-section at singly negatively charged center) and temperature dependence. It is found that Sp= is (22 ± 6). 10-16 cm2 and Sn- is ∼ 0·1. 10-16 cm2 at 145°K. Sp= varies (n = 3·5 to 4·5) in the range 145-220°K; above 225°K the index 'n' tends to a smaller value. Sn- is practically temperature independent below 180°K and increases with increase of temperature above 180°K. The value of Sp= and its temperature variation lead one to the conclusion that during capture at attractive centers, the phonon cascade mechanism is responsible for the dissipation of the recombination energy.

Simplified theory of carrier back-scattering in semiconducting carbon nanotubes: A Kane's model approach

We present a simplified yet analytical formulation of the carrier backscattering coefficient for zig-zag semiconducting single walled carbon nanotubes under diffusive regime. The electron-phonon scattering rate for longitudinal acoustic, optical, and zone-boundary phonon emissions for both inter- and intrasubband transition rates have been derived using Kane's nonparabolic energy subband model.The expressions for the mean free path and diffusive resistance have been formulated incorporating the aforementioned phonon scattering. Appropriate overlap function in Fermi's golden rule has been incorporated for a more general approach. The effect of energy subbands on low and high bias zones for the onset of longitudinal acoustic, optical, and zone-boundary phonon emissions and absorption have been analytically addressed. 90% transmission of the carriers from the source to the drain at 400 K for a 5 mu m long nanotube at 105 V m(-1) has been exhibited. The analytical results are in good agreement with the available experimental data. (c) 2010 American Institute of Physics.