On the quality of hydrogenated amorphous silicon deposited by sputtering

Amorphous hydrogenated silicon (a-Si:H) is well-known material in the global semiconductor industry. The quality of the a-Si:H films is generally decided by silicon and hydrogen bonding configuration (Si-H-x, x=1,2) and hydrogen concentration (C-H). These quality aspects are correlated with the plasma parameters like ion density (N-i) and electron temperature (T-e) of DC, Pulsed DC (PDC) and RF plasmas during the sputter-deposition of a-Si:H thin films. It was found that the N-i and T-e play a major role in deciding Si-H-x bonding configuration and the C-H value in a-Si:H films. We observed a trend in the variation of Si-H and Si-H-2 bonding configurations, and C-H in the films deposited by DC, Pulsed DC and RF reactive sputtering techniques. Ion density and electron energy are higher in RF plasma followed by PDC and DC plasma. Electrons with two different energies were observed in all the plasmas. At a particular hydrogen partial pressure, RF deposited films have higher C-H followed by PDC and then DC deposited films. The maximum energy that can be acquired by the ions was found to be higher in RF plasma. Floating potential (V-f) is more negative in DC plasma, whereas, plasma potential (V-p) is found to be more positive in RF plasma. (C) 2014 Elsevier Ltd. All rights reserved.

Inductively coupled reactive ion etching studies on sputtered yttria stabilized zirconia thin films in SF6, Cl-2, and BCl3 chemistries

Downscaling of yttria stabilized zirconia (YSZ) based electrochemical devices and gate oxide layers requires successful pattern transfer on YSZ thin films. Among a number of techniques available to transfer patterns to a material, reactive ion etching has the capability to offer high resolution, easily controllable, tunable anisotropic/isotropic pattern transfer for batch processing. This work reports inductively coupled reactive ion etching studies on sputtered YSZ thin films in fluorine and chlorine based plasmas and their etch chemistry analyses using x-ray photoelectron spectroscopy. Etching in SF6 plasma gives an etch rate of 7 nm/min chiefly through physical etching process. For same process parameters, in Cl-2 and BCl3 plasmas, YSZ etch rate is 17 nm/min and 45 nm/min, respectively. Increased etch rate in BCl3 plasma is attributed to its oxygen scavenging property synergetic with other chemical and physical etch pathways. BCl3 etched YSZ films show residue-free and smooth surface. The surface atomic concentration ratio of Zr/Y in BCl3 etched films is closer to as-annealed YSZ thin films. On the other hand, Cl-2 etched films show surface yttrium enrichment. Selectivity ratio of YSZ over silicon (Si), silicon dioxide (SiO2) and silicon nitride (Si3N4) are 1:2.7, 1:1, and 1:0.75, respectively, in BCl3 plasma. YSZ etch rate increases to 53 nm/min when nonoxygen supplying carrier wafer like Si3N4 is used. (C) 2015 American Vacuum Society.

Atmospheric pressure plasma chemical vapor deposition reactor for 100 mm wafers, optimized for minimum contamination at low gas flow rates

Gas discharge plasmas used for thinfilm deposition by plasma-enhanced chemical vapor deposition (PECVD) must be devoid of contaminants, like dust or active species which disturb the intended chemical reaction. In atmospheric pressure plasma systems employing an inert gas, the main source of such contamination is the residual air inside the system. To enable the construction of an atmospheric pressure plasma (APP) system with minimal contamination, we have carried out fluid dynamic simulation of the APP chamber into which an inert gas is injected at different mass flow rates. On the basis of the simulation results, we have designed and built a simple, scaled APP system, which is capable of holding a 100 mm substrate wafer, so that the presence of air (contamination) in the APP chamber is minimized with as low a flow rate of argon as possible. This is examined systematically by examining optical emission from the plasma as a function of inert gas flow rate. It is found that optical emission from the plasma shows the presence of atmospheric air, if the inlet argon flow rate is lowered below 300 sccm. That there is minimal contamination of the APP reactor built here, was verified by conducting an atmospheric pressure PECVD process under acetylene flow, combined with argon flow at 100 sccm and 500 sccm. The deposition of a polymer coating is confirmed by infrared spectroscopy. X-ray photoelectron spectroscopy shows that the polymer coating contains only 5% of oxygen, which is comparable to the oxygen content in polymer deposits obtained in low-pressure PECVD systems. (C) 2015 AIP Publishing LLC.