Nanostructured GdxZn1-xO thin films by nebulizer spray pyrolysis technique: Role of doping concentration on the structural and optical properties

Nanostructured GdxZn1-xO thin films with different Gd concentration from 0% to 10% deposited at 400 degrees C using the NSF technique. The films were characterized by structural, surface and optical properties, respectively. X-ray diffraction analysis shows that the Gd doped ZnO films have lattice parameters a = 3.2497 angstrom and c = 5.2018 angstrom with hexagonal structure and preferential orientation along (002) plane. The estimated values compare well with the standard values. When film thickness increases from 222 to 240 nm a high visible region transmittance (>70%) is observed. The optical band gap energy, optical constants (n and k), complex dielectric constants (epsilon(r), and epsilon(i)) and optical conductivities (sigma(r), and sigma(i)) were calculated from optical transmittance data. The optical band gap energy is 3.2 eV for pure ZnO film and 3.6 eV for Gd0.1Zn0.9-O film. The PL studies confirm the presence of a strong UV emission peak at 399 nm. Besides, the UV emission of ZnO films decreases with the increase of Gd doping concentration correspondingly the ultra-violet emission is replaced by blue and green emissions.

Anomalous optical phonons in Cs-0.9(NH4)(0.1)H2AsO4: a temperature-dependent Raman study

We determine the nature of coupled phonons in mixed crystal of Cs-0.9(NH4)(0.1)H2AsO4 using inelastic light scattering studies in the temperature range of 5 K to 300 K covering a spectral range of 60-1100 cm(-1). The phase transition in this system are marked by the splitting of phonon modes, appearance of new modes and anomalies in the frequency as well as linewidth of the phonon modes near transition temperature. In particular, we observed the splitting of symmetric (v(1)) and antisymmetric (v(3)) stretching vibrations associated with AsO4 tetrahedra below transition temperature (T-c(*) similar to 110 K) attributed to the lowering of site symmetry of AsO4 in orthorhombic phase below transition temperature. In addition, the step-up (hardening) and step-down (softening) of the AsO4 bending vibrations (v(4) (S9, S11) and v(2) (S6)) below transition temperature signals the rapid development of long range ferroelectric order and proton ordering. The lowest frequency phonon (S1) mode observed at similar to 92 cm(-1) shows anomalous blue shift (similar to 12 %) from 300 K to 5 K with no sharp transition near T-c(*) unlike other observed phonon modes signaling its potential coupling with the proton tunneling mode. (C) 2013 Author(s).

Hard-core bosons in a zig-zag optical superlattice

We study a system of hard-core bosons at half-filling in a one-dimensional optical superlattice. The bosons are allowed to hop to nearest-and next-nearest-neighbor sites. We obtain the ground-state phase diagram as a function of microscopic parameters using the finite-size density-matrix renormalization-group method. Depending on the sign of the next-nearest-neighbor hopping and the strength of the superlattice potential the system exhibits three different phases, namely the bond-order (BO) solid, the superlattice induced Mott insulator (SLMI), and the superfluid (SF) phase. When the signs of both hopping amplitudes are the same (the unfrustratedase), the system undergoes a transition from the SF to the SLMI at a nonzero value of the superlattice potential. On the other hand, when the two amplitudes differ in sign (the frustrated case), the SF is unstable to switching on a superlattice potential and also exists only up to a finite value of the next-nearest-neighbor hopping. This part of the phase diagram is dominated by the BO phase which breaks translation symmetry spontaneously even in the absence of the superlattice potential and can thus be characterized by a bond-order parameter. The transition from BO to SLMI appears to be first order.

Atomic Structure of Quantum Gold Nanowires: Quantification of the Lattice Strain

Theoretical studies exist to compute the atomic arrangement in gold nanowires and the influence on their electronic behavior with decreasing diameter. Experimental studies, e.g., by transmission electron microscopy, on chemically synthesized ultrafine wires are however lacking owing to the unavailability of suitable protocols for sample preparation and the stability of the wires under electron beam irradiation. In this work, we present an atomic scale structural investigation on quantum single crystalline gold nanowires of 2 nm diameter, chemically prepared on a carbon film grid. Using low dose aberration-corrected high resolution (S)TEM, we observe an inhomogeneous strain distribution in the crystal, largely concentrated at the twin boundaries and the surface along with the presence of facets and surface steps leading to a noncircular cross section of the wires. These structural aspects are critical inputs needed to determine their unique electronic character and their potential as a suitable catalyst material. Furthermore, electron-beam-induced structural changes at the atomic scale, having implications on their mechanical behavior and their suitability as interconnects, are discussed.

Electrostatic modulation of periodic potentials in a two-dimensional electron gas: from antidot lattice to quantum dot lattice

We use a dual gated device structure to introduce a gate-tuneable periodic potential in a GaAs/AlGaAs two dimensional electron gas (2DEG). Using only a suitable choice of gate voltages we can controllably alter the potential landscape of the bare 2DEG, inducing either a periodic array of antidots or quantum dots. Antidots are artificial scattering centers, and therefore allow for a study of electron dynamics. In particular, we show that the thermovoltage of an antidot lattice is particularly sensitive to the relative positions of the Fermi level and the antidot potential. A quantum dot lattice, on the other hand, provides the opportunity to study correlated electron physics. We find that its current-voltage characteristics display a voltage threshold, as well as a power law scaling, indicative of collective Coulomb blockade in a disordered background.

Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties

We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250-400 degrees C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (similar to 10-15 nm) and micron long ITO NWs growth was observed in a temperature window of 300-400 degrees C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300-400 degrees C have shown similar to 2-6% reflection and similar to 70-85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices. (C) 2014 Elsevier Ltd. All rights reserved.

Structural refinement, optical and electrical properties of Ba1-x Sm-2x/3](Zr0.05Ti0.95)O-3 ceramics

Samarium doped barium zirconate titanate ceramics with general formula Ba1-x Sm-2x/3](Zr0.05Ti0.95)O-3 x = 0, 0.01, 0.02, and 0.03] were prepared by high energy ball milling method. X-ray diffraction patterns and micro-Raman spectroscopy confirmed that these ceramics have a single phase with a tetragonal structure. Rietveld refinement data were employed to model BaO12], SmO12], ZrO6], and TiO6] clusters in the lattice. Scanning electron microscopy shows a reduction in average grain size with the increase of Sm3+ ions into lattice. Temperature-dependent dielectric studies indicate a ferroelectric phase transition and the transition temperature decreases with an increase in Sm3+ ion content. The nature of the transition was investigated by the Curie-Weiss law and it is observed that the diffusivity increases with Sm3+ ion content. The ferroelectric hysteresis loop illustrates that the remnant polarization and coercive field increase with an increase in Sm3+ ions content. Optical properties of the ceramics were studied using ultraviolet-visible diffuse reflectance spectroscopy.

Nonlinear optical absorption in a graphene infrared photodetector

The photoresponse of the graphene photodetector elucidated strong dependence on several optical parameters, such as the angle of incidence and the incident power of infrared exposure at room temperature. The sinusoidal dependence of the photoresponse on incidence angle, which had not been realized before, has now been revealed. The combined effect of the photo excited charge carrier and the photon drag effect explain this nonlinear optical absorption in graphene at lower incident power. The nonlinear dependence of the charge carrier generation on the incident power revealed that this process contributed to the nonlinear photoresponse. However, a deviation is observed at a higher incident power due to the induction of thermal effects in the graphene lattice. This work demonstrates the tunability of the graphene photodetector under a systematic variation that involves both parameters.

Frustration in Optical Lattices of Interacting Bosons

The realization of optical lattices of cold atoms has opened up the possibility of engineering interacting lattice systems of bosons and fermions, stimulating a frenzy of research over the last decade. More recently, experimental techniques have been developed to apply synthetic gauge fields to these optical lattices. As a result, it has become possible to study quantum Hall physics and the effects of frustration in lattices of cold atoms. In this article we describe the combined effect of frustration and interactions on the superfluidity of bosons. By focussing on a frustrated ladder of interacting bosons, we show that the effect of frustration is for ``chiral'' order to develop, which manifests itself as an alternating pattern of circulating supercurrents. Remarkably, this order persists even when superfluidity is lost and the system enters a Mott phase giving rise to a novel chiral Mott insulator. We describe the combined physics of frustration and interactions by studying a fully frustrated one dimensional model of interacting bosons. The model is studied using mean-field theory, a direct quantum simulation and a higher dimensional classical theory in order to offer a full description of the different quantum phases contained in it and transitions between the different phases. In addition, we provide physical descriptions of the chiral Mott insulator as a vortex-anitvortex super solid and indirect excitonic condensate in addition to obtaining a variational wavefunction for it. We also briefly describe the chiral Mott states arising in other microscopic models.

Tailoring the Microstructural, Optical, and Electrical Properties of Nanocrystalline WO3 Thin Films Using Al Doping

We have studied the influence of Al doping on the microstructural, optical, and electrical properties of spray-deposited WO3 thin films. XRD analyses confirm that all the films are of polycrystalline WO3 in nature, possessing monoclinic structure. EDX profiles of the Al-doped films show aluminum peaks implying incorporation of Al ions into WO3 lattice. On Al doping, the average crystallite size decreases due to increase in the density of nucleation centers at the time of film growth. The observed variation in the lattice parameter values on Al doping is attributed to the incorporation of Al ions into WO3 lattice. Enhancement in the direct optical band gap compared to the undoped film has been observed on Al doping due to decrease in the width of allowed energy states near the conduction band edge. The refractive indices of the films follow the Cauchy relation of normal dispersion. Electrical resistivity compared to the undoped film has been found to increase on Al doping.

Optical properties of an inhomogeneously broadened Lambda V-system with multiple excited states

We present a theoretical model using a density matrix approach to show the influence of multiple excited states on the optical properties of an inhomogeneously broadened Lambda V-system of the Rb-87 D2 line. These closely spaced multiple excited states cause asymmetry in absorption and dispersion profiles. We observe the reduced absorption profiles, due to dressed state interactions of the applied electromagnetic fields, which results the Mollow sideband-like transparency windows. In a room temperature vapor, we obtain a narrow enhanced absorption and steep positive dispersion at the line center when the strengths of control and pump fields are equal. Here, we show how the probe transmittance varies when it passes through the atomic medium. We also discuss the transient behavior of our system which agrees well with the corresponding absorption and dispersion profiles. This study has potential applications in controllability of group velocity, and for optical and quantum information processing.

Tuning photoinduced terahertz conductivity in monolayer graphene: Optical-pump terahertz-probe spectroscopy

Optical-pump terahertz-probe differential transmission measurements of as-prepared single layer graphene (AG) (unintentionally hole dopedwith Fermi energy E-F at similar to -180 meV), nitrogen doping compensated graphene (NDG) with E-F similar to -10 meV, and thermally annealed doped graphene (TAG) are examined quantitatively to understand the opposite signs of photoinduced dynamic terahertz conductivity Delta sigma. It is negative for AG and TAG but positive for NDG. We show that the recently proposed mechanism of multiple generations of secondary hot carriers due to Coulomb interaction of photoexcited carriers with the existing carriers together with the intraband scattering can explain the change of photoinduced conductivity sign and its magnitude. We give a quantitative estimate of Delta sigma in terms of controlling parameters-the Fermi energy E-F and momentum relaxation time tau. Furthermore, the cooling of photoexcited carriers is analyzed using a supercollision model which involves a defect mediated collision of the hot carriers with the acoustic phonons, thus giving an estimate of the deformation potential.

Pressure-Dependent Optical and Vibrational Properties of Mono layer Molybdenum Disulfide

Controlling the band gap by tuning the lattice structure through pressure engineering is a relatively new route for tailoring the optoelectronic properties of two-dimensional (2D) materials. Here, we investigate the electronic structure and lattice vibrational dynamics of the distorted monolayer 1T-MoS2 (1T') and the monolayer 2H-MoS2 via a diamond anvil cell (DAC) and density functional theory (DFT) calculations. The direct optical band gap of the monolayer 2H-MoS2 increases by 11.7% from 1.85 to 2.08 eV, which is the highest reported for a 2D transition metal dichalcogenide (TMD) material. DFT calculations reveal a subsequent decrease in the band gap with eventual metallization of the monolayer 2H-MoS2, an overall complex structureproperty relation due to the rich band structure of MoS2. Remarkably, the metastable 1T'-MoS2 metallic state remains invariant with pressure, with the J(2), A(1g), and E(2)g modes becoming dominant at high pressures. This substantial reversible tunability of the electronic and vibrational properties of the MoS2 family can be extended to other 2D TMDs. These results present an important advance toward controlling the band structure and optoelectronic properties of monolayer MoS2 via pressure, which has vital implications for enhanced device applications.

Optoelectronic Properties of Graphene on Silicon Substrate: Effect of Defects in Graphene

Engineering of electronic energy band structure in graphene based nanostructures has several potential applications. Substrate induced bandgap opening in graphene results several optoelectronic properties due to the inter-band transitions. Various defects like structures, including Stone-Walls and higher-order defects are observed when a graphene sheet is exfoliated from graphite and in many other growth conditions. Existence of defect in graphene based nanostructures may cause changes in optoelectronic properties. Defect engineered graphene on silicon system are considered in this paper to study the tunability of optoelectronic properties. Graphene on silicon atomic system is equilibrated using molecular dynamics simulation scheme. Based on this study, we confirm the existence of a stable super-lattice. Density functional calculations are employed to determine the energy band structure for the super-lattice. Increase in the optical energy bandgap is observed with increasing of order of the complexity in the defect structure. Optical conductivity is computed as a function of incident electromagnetic energy which is also increasing with increase in the defect order. Tunability in optoelectronic properties will be useful in understanding graphene based design of photodetectors, photodiodes and tunnelling transistors.

Detection of a quantum particle on a lattice under repeated projective measurements

We consider a quantum particle, moving on a lattice with a tight-binding Hamiltonian, which is subjected to measurements to detect its arrival at a particular chosen set of sites. The projective measurements are made at regular time intervals tau, and we consider the evolution of the wave function until the time a detection occurs. We study the probabilities of its first detection at some time and, conversely, the probability of it not being detected (i.e., surviving) up to that time. We propose a general perturbative approach for understanding the dynamics which maps the evolution operator, which consists of unitary transformations followed by projections, to one described by a non-Hermitian Hamiltonian. For some examples of a particle moving on one-and two-dimensional lattices with one or more detection sites, we use this approach to find exact expressions for the survival probability and find excellent agreement with direct numerical results. A mean-field model with hopping between all pairs of sites and detection at one site is solved exactly. For the one-and two-dimensional systems, the survival probability is shown to have a power-law decay with time, where the power depends on the initial position of the particle. Finally, we show an interesting and nontrivial connection between the dynamics of the particle in our model and the evolution of a particle under a non-Hermitian Hamiltonian with a large absorbing potential at some sites.