Modelling of Effect of Non-Uniform Current Density on the Performance of Soluble Lead Redox Flow Batteries

Soluble lead acid redox flow battery (SLRFB) offers a number of advantages. These advantages can be harnessed after problems associated with buildup of active material on. electrodes (residue) are resolved. A mathematical model is developed to understand residue formation in SLRFB. The model incorporates fluid flow, ion transport, electrode reactions, and non-uniform current distribution on electrode surfaces. A number of limiting cases are studied to conclude that ion transport and electrode reaction on anode simultaneously control battery performance. The model fits the reported cell voltage vs. time profiles very well. During the discharge cycle, the model predicts complete dissolution of deposited material from trailing edge side of the electrodes. With time, the active surface area of electrodes decreases rapidly. The corresponding increase in current density leads to precipitous decrease in cell potential before all the deposited material is dissolved. The successive charge-discharge cycles add to the residue. The model correctly captures the marginal effect of flow rate on cell voltage profiles, and identifies flow rate and flow direction as new variables for controlling residue buildup. Simulations carried out with alternating flow direction and a SLRFB with cylindrical electrodes show improved performance with respect to energy efficiency and residue buildup. (C) 2014 The Electrochemical Society. All rights reserved.

Impact of Stone-Wales and lattice vacancy defects on the electro-thermal transport of the free standing structure of metallic ZGNR

We report the effect of topological as well as lattice vacancy defects on the electro-thermal transport properties of the metallic zigzag graphene nano ribbons at their ballistic limit. We employ the density function theory-Non equilibrium green's function combination to calculate the transmission details. We then present an elaborated study considering the variation in the electrical current and the heat current transport with the change in temperature as well as the voltage gradient across the nano ribbons. The comparative analysis shows, that in the case of topological defects, such as the Stone-Wales defect, the electrical current transport is minimum. Besides, for the voltage gradient of 0.5 Volt and the temperature gradient of 300 K, the heat current transport reduces by similar to 62 % and similar to 50% for the cases of Stones-Wales defect and lattice vacancy defect respectively, compared to that of the perfect one.

Supramolecular Gating of Ion Transport in Nanochannels

Several covalent strategies towards surface charge-reversal in nanochannels have been reported with the purpose of manipulating ion transport. However, covalent routes lack dynamism, modularity and post-synthetic flexibility, and hence restrict their applicability in different environments. Here, we introduce a facile non-covalent approach towards charge-reversal in nanochannels (< 10 nm) using strong charge-transfer interactions between dicationic viologen (acceptor) and trianionic pyranine (donor). The polarity of ion transport was switched from anion selective to ambipolar to cation selective by controlling the extent of viologen bound to the pyranine. We could also regulate the ion transport with respect to pH by selecting a donor with pH-responsive functional groups. The modularity of this approach further allows facile integration of various functional groups capable of responding to stimuli such as light and temperature to modulate the transport of ions as well as molecules.

Effect of Line Defects on the Electrical Transport Properties of Monolayer MoS2 Sheet

We present a computational study on the impact of line defects on the electronic properties of monolayer MoS2. Four different kinds of line defects with Mo and S as the bridging atoms, consistent with recent theoretical and experimental observations, are considered herein. We employ the density functional tight-binding (DFTB) method with a Slater-Koster-type DFTB-CP2K basis set for evaluating the material properties of perfect and the various defective MoS2 sheets. The transmission spectra are computed with a DFTB-non-equilibrium Green's function formalism. We also perform a detailed analysis of the carrier transmission pathways under a small bias and investigate the phase of the transmission eigenstates of the defective MoS2 sheets. Our simulations show a two to four fold decrease in carrier conductance of MoS2 sheets in the presence of line defects as compared to that for the perfect sheet.

Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE

InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy. The composition of indium incorporation in single phase InGaN film was found to be 23%. The band gap energy of single phase InGaN was found to be similar to 2.48 eV: The current-voltage (I-V) characteristic of InGaN/GaN heterojunction was found to be rectifying behavior which shows the presence of Schottky barrier at the interface. Log-log plot of the I-V characteristics under forward bias indicates the current conduction mechanism is dominated by space charge limited current mechanism at higher applied voltage, which is usually caused due to the presence of trapping centers. The room temperature barrier height and the ideality factor of the Schottky junction were found to 0.76 eV and 4.9 respectively. The non-ideality of the Schottky junction may be due to the presence of high pit density and dislocation density in InGaN film. (C) 2014 Elsevier Ltd. All rights reserved.

Cross-correlation-aided transport in stochastically driven accretion flows

The origin of linear instability resulting in rotating sheared accretion flows has remained a controversial subject for a long time. While some explanations of such non-normal transient growth of disturbances in the Rayleigh stable limit were available for magnetized accretion flows, similar instabilities in the absence of magnetic perturbations remained unexplained. This dichotomy was resolved in two recent publications by Chattopadhyay and co-workers Mukhopadhyay and Chattopadhyay, J. Phys. A 46, 035501 (2013); Nath et al., Phys. Rev. E 88, 013010 (2013)] where it was shown that such instabilities, especially for nonmagnetized accretion flows, were introduced through interaction of the inherent stochastic noise in the system (even a ``cold'' accretion flow at 3000Kis too ``hot'' in the statistical parlance and is capable of inducing strong thermal modes) with the underlying Taylor-Couette flow profiles. Both studies, however, excluded the additional energy influx (or efflux) that could result from nonzero cross correlation of a noise perturbing the velocity flow, say, with the noise that is driving the vorticity flow (or equivalently the magnetic field and magnetic vorticity flow dynamics). Through the introduction of such a time symmetry violating effect, in this article we show that nonzero noise cross correlations essentially renormalize the strength of temporal correlations. Apart from an overall boost in the energy rate (both for spatial and temporal correlations, and hence in the ensemble averaged energy spectra), this results in mutual competition in growth rates of affected variables often resulting in suppression of oscillating Alfven waves at small times while leading to faster saturations at relatively longer time scales. The effects are seen to be more pronounced with magnetic field fluxes where the noise cross correlation magnifies the strength of the field concerned. Another remarkable feature noted specifically for the autocorrelation functions is the removal of energy degeneracy in the temporal profiles of fast growing non-normal modes leading to faster saturation with minimum oscillations. These results, including those presented in the previous two publications, now convincingly explain subcritical transition to turbulence in the linear limit for all possible situations that could now serve as the benchmark for nonlinear stability studies in Keplerian accretion disks.

Holographic charge diffusion in non-relativistic branes

In this paper, based on the principles of gauge/gravity duality and considering the so called hydrodynamic limit we compute various charge transport properties for a class of strongly coupled non-relativistic CFTs corresponding to z=2 fixed point whose dual gravitational counter part could be realized as the consistent truncation of certain non-relativistic Dp branes in the non-extremal limit. From our analysis we note that unlike the case for the AdS black branes, the charge diffusion constant in the non-relativistic background scales differently with the temperature. This shows a possible violation of the universal bound on the charge conductivity to susceptibility ratio in the context of non-relativistic holography. (C) 2015 The Author. Published by Elsevier B.V.

Controlled material transport and multidimensional patterning at small length scales using electromigration

Electromigration, mostly known for its damaging effects in microelectronic devices, is basically a material transport phenomenon driven by the electric field and kinetically controlled by diffusion. In this work, we show how controlled electromigration can be used to create scientifically interesting and technologically useful micro-/nano-scale patterns, which are otherwise extremely difficult to fabricate using conventional cleanroom practices, and present a few examples of such patterns. In a solid thin-film structure, electromigration is used to generate pores at preset locations for enhancing the sensitivity of a MEMS sensor. In addition to electromigration in solids, the flow instability associated with the electromigration-induced long-range flow of liquid metals is shown to form numerous structures with high surface area to volume ratio. In very thin solid films on non-conductive substrates, solidification of flow-affected region results in the formation of several features, such as nano-/micro-sized discrete metallic beads, 3D structures consisting of nano-stepped stairs, etc.

Transport properties of solution processed Cu2SnS3/AZnO heterostructure for low cost photovoltaics

Cu2SnS3 thin films were deposited by a facile sot-gel technique followed by annealing. The annealed films were structurally characterized by grazing incidence X-ray diffraction (GIXRD) and transmission electron microscopy (TEM). The crystal structure was found to be tetragonal with crystallite sizes of 2.4-3 nm. Texture coefficient calculations from the GIXRD revealed the preferential orientation of the film along the (112) plane. The morphological investigations of the films were carried out using field emission scanning electron microscopy (FESEM) and the composition using electron dispersive spectroscopy (EDS). The temperature dependent current, voltage characteristics of the Cu2SnS3/AZnO heterostructure were studied. The log I-log V plot exhibited three regions of different slopes showing linear ohmic behavior and non-linear behavior following the power law. The temperature dependent current voltage characteristics revealed the variation in ideality factor and barrier height with temperature. The Richardson constant was calculated and its deviation from the theoretical value revealed the inhomogeneity of the barrier heights. Transport characteristics were modeled using the thermionic emission model. The Gaussian distribution of barrier heights was applied and from the modified Richardson plot the value of the Richardson constant was found to be 47.18 A cm(-2) K-2. (c) 2015 Elsevier B.V. All rights reserved.

Binary group III-nitride based heterostructures: band offsets and transport properties

In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.

Infiltration of Matrix-Non-producers Weakens the Salmonella Biofilm and Impairs Its Antimicrobial Tolerance and Pathogenicity

Bacterial biofilms display a collective lifestyle, wherein the cells secrete extracellular polymeric substances (EPS) that helps in adhesion, aggregation, stability, and to protect the bacteria from antimicrobials. We asked whether the BPS could act as a public good for the biofilm and observed that infiltration of cells that do not produce matrix components weakened the biofilm of Salmonella enterica serovar Typhimurium. PS production was costly for the producing cells, as indicated by a significant reduction in the fitness of wild type (WT) cells during competitive planktonic growth relative to the non-producers. Infiltration frequency of non-producers in the biofilm showed a concomitant decrease in overall productivity. It was apparent in the confocal images that the non producing cells benefit from the BPS produced by the Wild Type (WT) to stay in the biofilm. The biofilm containing non-producing cells were more significantly susceptible to sodium hypochlorite and ciprofloxacin treatment than the WT biofilm. Biofilm infiltrated with non-producers delayed the pathogenesis, as tested in a murine model. The cell types were spatially assorted, with non producers being edged out in the biofilm. However, cellulose was found to act as a barrier to keep the non-producers away from the WT microcolony. Our results show that the infiltration of non-cooperating cell types can substantially weaken the biofilm making it vulnerable to antibacterials and delay their pathogenesis. Cellulose, a component of BPS, was shown to play a pivotal role of acting as the main public good, and to edge-out the non-producers away from the cooperating microcolony.

Optimization of bus allocation to depots by minimizing dead kilometers

In metropolitan cities, public transportation service plays a vital role in mobility of people, and it has to introduce new routes more frequently due to the fast development of the city in terms of population growth and city size. Whenever there is introduction of new route or increase in frequency of buses, the nonrevenue kilometers covered by the buses increases as depot and route starting/ending points are at different places. This non-revenue kilometers or dead kilometers depends on the distance between depot and route starting point/ending point. The dead kilometers not only results in revenue loss but also results in an increase in the operating cost because of the extra kilometers covered by buses. Reduction of dead kilometers is necessary for the economic growth of the public transportation system. Therefore, in this study, the attention is focused on minimizing dead kilometers by optimizing allocation of buses to depots depending upon the shortest distance between depot and route starting/ending points. We consider also depot capacity and time period of operation during allocation of buses to ensure parking safety and proper maintenance of buses. Mathematical model is developed considering the aforementioned parameters, which is a mixed integer program, and applied to Bangalore Metropolitan Transport Corporation (BMTC) routes operating presently in order to obtain optimal bus allocation to depots. Database for dead kilometers of depots in BMTC for all the schedules are generated using the Form-4 (trip sheet) of each schedule to analyze depot-wise and division-wise dead kilometers. This study also suggests alternative locations where depots can be located to reduce dead kilometers. Copyright (C) 2015 John Wiley & Sons, Ltd.

Botulinum neurotoxin type-A enters a non-recycling pool of synaptic vesicles

Neuronal communication relies on synaptic vesicles undergoing regulated exocytosis and recycling for multiple rounds of fusion. Whether all synaptic vesicles have identical protein content has been challenged, suggesting that their recycling ability may differ greatly. Botulinum neurotoxin type-A (BoNT/A) is a highly potent neurotoxin that is internalized in synaptic vesicles at motor nerve terminals and induces flaccid paralysis. Recently, BoNT/A was also shown to undergo retrograde transport, suggesting it might enter a specific pool of synaptic vesicles with a retrograde trafficking fate. Using high-resolution microscopy techniques including electron microscopy and single molecule imaging, we found that the BoNT/A binding domain is internalized within a subset of vesicles that only partially co-localize with cholera toxin B-subunit and have markedly reduced VAMP2 immunoreactivity. Synaptic vesicles loaded with pHrodo-BoNT/A-Hc exhibited a significantly reduced ability to fuse with the plasma membrane in mouse hippocampal nerve terminals when compared with pHrodo-dextran-containing synaptic vesicles and pHrodo-labeled anti-GFP nanobodies bound to VAMP2-pHluorin or vGlut-pHluorin. Similar results were also obtained at the amphibian neuromuscular junction. These results reveal that BoNT/A is internalized in a subpopulation of synaptic vesicles that are not destined to recycle, highlighting the existence of significant molecular and functional heterogeneity between synaptic vesicles.

Theoretical insights on the electro-thermal transport properties of monolayer MoS2 with line defects

Two dimensional (2D) materials demonstrate several novel electrical, mechanical, and thermal properties which are quite distinctive to those of their bulk form. Among many others, one important potential application of the 2D material is its use in the field of energy harvesting. Owing to that, here we present a detailed study on electrical as well as thermal transport of monolayer MoS2, in quasi ballistic regime. Besides the perfect monolayer in its pristine form, we also consider various line defects which have been experimentally observed in mechanically exfoliated MoS2 samples. For calculating various parameters related to the electrical transmission, we employ the non-equilibrium Green's function-density functional theory combination. However, to obtain the phonon transmission, we take help of the parametrized Stillinger-Weber potential which can accurately delineate the inter-atomic interactions for the monolayer MoS2. Due to the presence of line defects, we observed significant reductions in both the charge carrier and the phonon transmissions through a monolayer MoS2 flake. Moreover, we also report a comparative analysis showing the temperature dependency of the thermoelectric figure of merit values, as obtained for the perfect as well as the other defective 2D samples. (C) 2016 AIP Publishing LLC.