An electron spectroscopic study of the adsorption of nitrogen on a Ni/TiO2 catalyst prepared in situ in the spectrometer: evidence for dissociative adsorption in the strong-metal-support-interaction (SMSI) state

Nitrogen is dissociatively adsorbed on an annealed Ni/TiO2 surface just as on a Ti–Ni alloy surface while it is molecularly adsorbed on a Ni/Al2O3 surface.

Crystallization studies on amorphous AI-Y-Ni and AI-Y-Cu alloys

AI83Y10Ni7, AI80Y10Ni10 and AI80Y10Cu10 alloys were studied by the rapid solidification processing route. The glass-forming ability was found to decrease in the order of alloys mentioned above. Differential scanning calorimetry (DSC) of these amorphous alloys showed that the amorphous phase in AI-Y-Ni alloys has a higher thermal stability when compared to that in AI-Y-Cu alloys. A four-stage crystallization sequence could be identified for the AI-Y-Ni amorphous alloys. Even though the AI80Y10Cu10 alloy showed four exothermic peaks in the DSC study, a definite crystallization sequence could not be arrived at due to the coexistence of many crystalline phases along with the amorphous phase in the melt-spun condition.

Processing maps for hot working of Cu-Ni-Zn alloys. Part I - Alpha-nickel silver

The constitutive behaviour of agr — nickel silver in the temperature range 700–950 °C and strain rate range 0.001–100 s–1 was characterized with the help of a processing map generated on the basis of the principles of the ldquodynamic materials modelrdquo of Prasadet al Using the flow stress data, processing maps showing the variation of the efficiency of power dissipation (given by 2m/(m+1) wherem is the strain-rate sensitivity) with temperature and strain rate were obtained, agr-nickel silver exhibits a single domain at temperatures greater than 750 °C and at strain rates lower than 1s–1, with a maximum efficiency of 38% occurring at about 950 °C and at a strain rate of 0.1 s–1. In the domain the material undergoes dynamic recrystallization (DRX). On the basis of a model, it is shown that the DRX is controlled by the rate of interface formation (nucleation) which depends on the diffusion-controlled process of thermal recovery by climb. At high strain rates (10 and 100s–1) the material undergoes microstructural instabilities, the manifestations of which are in the form of adiabatic shear bands and strain markings.

Processing maps for hot working of Cu-Ni-Zn alloys Part II Alpha-Beta nickel silver

The constitutive behaviour of agr-beta nickel silver in the temperature range 600�850 °C and strainrate range 0.001�100s�1 was characterized with the help of a processing map generated on the principles of the dynamic materials model. On the basis of the flow-stress data, processing maps showing the variation of the efficiency of power dissipation (given by [2m/(m+1)], wherem is the strain-rate sensitivity) with temperature and strain rate were obtained, agr-beta nickel silver exhibits a single domain at temperatures greater than 700 °C and at strain rates lower than 1 s�1 with a maximum efficiency of power dissipation of about 42% occurring at about 850 °C and at 0.1 s�1. In the domain, the agr phase undergoes dynamic recrystallization and controls the deformation of the alloy, while the beta phase deforms superplastically. Optimum conditions for the processing of agr-beta nickel silver are 850 °C and 0.1 s�1. The material undergoes unstable flow at strain rates of 10 and 100 s�1 and in the temperature range 600�750 °C, manifestated in the form of adiabatic shear bands.

Strong metal-support interaction in Ni/TiO2 catalysts: in situ EXAFS and related studies

In situ EXAFS and X-ray diffraction investigations of Ni/TiO2 catalysts show that NiTiO3 is formed as an intermediate during calcination of catalyst precursors prepared by the wet-impregnation method; the intermediate is not formed when ion-exchange method is used for the preparation. On hydrogen reduction, NiTiO3 gives rise to Ni particles dispersed in the TiO2(rutile) matrix. The occurrence of the anatase-rutile transformation of the TiO2 support, the formation and subsequent decomposition/reduction of NiTiO3 as well as the unique interface properties of the Ni particles are all factors of importance in giving rise to metal-support interaction. Active TiO2(anatase) prepared from gel route gives an additional species involving Ni3+.

A study of cubic bismuth oxides of the type bi(26-X)m(X)O(40-delta) (m=ti, mn, fe, co, ni or pb) related to gamma-bi2O3

A structural investigation of cubic oxides (space group I23) of the formula Bi(26-x)M(x)O(40-delta) (M = Ti, Mn, Fe, Co, Ni and Pb) related to the Y-Bi2O3 phase has been carried out by the Rietveld profile analysis of high-resolution X-ray powder diffraction data in order to establish the cation distributions. Compositional dependence of the cation distribution has been examined in the case of Bi26-xCoxO40-delta (1 < x < 16). The study reveals that in Bi(26-X)M(X)O(40-delta) with M = Ti, Mn, Fe, Co or Pb, the M cations tend to occupy tetrahedral (2a) sites when x < 2 while the octahedral (24f) sites are shared by the excess Co or Ni cations with Bi atoms when x > 2. Also experimental magnetic moments of Mn, Co and Ni derivatives have been used to establish the valence state and distribution of these cations.

Stabilized alpha-Ni(OH)2 as electrode material for for alkaline secondary cells

Hydrotalcite-like compounds of formula Ni1-xAl(x)(OH)2(CO3)x/2 . nH2O (x = 0.1 to 0.25), having the same structure as that of alpha-Ni(OH)2, have been synthesized by substituting nickel hydroxide with aluminum. Of these, the compounds of compositions x greater-than-or-equal-to 0.2 are found to have prolonged stability in strong alkaline medium. The electrodes comprising stabilized alpha-Ni(OH)2 of x = 0.2 composition are rechargeable with discharge-capacity values of 240 (+/- 15) mAh-g-1 and are attractive for applications in various alkaline secondary cells employing nickel-positive electrodes.

Kinetics of self-assembled InN quantum dots grown on Si (111) by plasma-assisted MBE

One of the scientific challenges of growing InN quantum dots (QDs), using Molecular beam epitaxy (MBE), is to understand the fundamental processes that control the morphology and distribution of QDs. A systematic manipulation of the morphology, optical emission, and structural properties of InN/Si (111) QDs is demonstrated by changing the growth kinetics parameters such as flux rate and growth time. Due to the large lattice mismatch, between InN and Si (similar to 8%), the dots formed from the Strannski-Krastanow (S-K) growth mode are dislocated. Despite the variations in strain (residual) and the shape, both the dot size and pair separation distribution show the scaling behavior. We observed that the distribution of dot sizes, for samples grown under varying conditions, follow the scaling function.

EXAFS investigations of Ni/gamma-Al2O3 and Ni/AlPO4 catalysts and their precursors

In-situ EXAFS investigations have been carried out on Ni/gamma-Al2O3 catalysts with different metal loadings and prepared from different precursors. When the calcined precursors are reduced in hydrogen, the proportion of nickel metal formed varies with the nature of the precursor employed; NiAl2O4 is the unreduced product. The metal loading does not have any significant effect on the proportion of metal formed except in the case of the catalyst prepared by wet-impregnation, where appreciable metal is obtained only when the loading is greater than 10wt%. Ni/AlPO4 catalysts do not show the formation of NiAl2O4 and reduction to metal is complate, unlike with the Ni/gamma-Al2O3 catalysts which show only partial reduction to metal.

Coadsorption of Dioxygen and Water on the Ni(110) Surface: Role of O1--Type Species in the Dissociation of Water

While the adsorption of dioxygen at a clean Ni(110) surface gives rise to two O(1s) features at 531 and 530 eV assigned to O-(a) and O2-(a) type species respectively, coadsorption of dioxygen and water mixtures result in the additional formation of hydroxyl species characterized by an O(1s) peak at 532.3 eV. The latter is attributed to the oxygen induced dissociation of water via a low energy pathway involving the O-(a)-type species. The proportions of the O-(a) and the hydroxyl species are greater for small O-2/H2O ratios and lower temperatures (120 K). With increase in temperature, the relative surface concentrations of the O-(a) and the hydroxyl species decrease while there is an increase in the concentration of the oxidic O2-(a) species. Thus, the surface concentrations of both the hydroxyl and the O2-(a) species depend critically on the presence of O- type species. Above 300K the surface chemistry in the main involves the conversion of O- to O2- species via the hydroxyl species.

Temperature-dependent photoluminescence of GaN grown on beta-Si3N4/Si (111) by plasma-assisted MBE

Photoluminescence (PL) of high quality GaN epitaxial layer grown on beta-Si3N4/Si (1 1 1) substrate using nitridation-annealing-nitridation method by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated in the range of 5-300 K. Crystallinity of GaN epilayers was evaluated by high resolution X-ray diffraction (HRXRD) and surface morphology by Atomic Force Microscopy (AFM) and high resolution scanning electron microscopy (HRSEM). The temperature-dependent photoluminescence spectra showed an anomalous behaviour with an `S-like' shape of free exciton (FX) emission peaks. Distant shallow donor-acceptor pair (DAP) line peak at approximately 3.285 eV was also observed at 5 K, followed by LO replica sidebands separated by 91 meV. The activation energy of the free exciton for GaN epilayers was also evaluated to be similar to 27.8 +/- 0.7 meV from the temperature-dependent PL studies. Low carrier concentrations were observed similar to 4.5 +/- 2 x 10(17) Cm-3 by measurements and it indicates the silicon nitride layer, which not only acts as a growth buffer layer, but also effectively prevents Si diffusion from the substrate to GaN epilayers. The absence of yellow band emission at around 2.2 eV signifies the high quality of film. The tensile stress in GaN film calculated by the thermal stress model agrees very well with that derived from Raman spectroscopy. (C) 2010 Elsevier B.V. All rights reserved.