Room-temperature bandlike transport and Hall effect in a high-mobility ambipolar polymer

The advent of a new class of high-mobility semiconducting polymers opens up a window to address fundamental issues in electrical transport mechanism such as transport between localized states versus extended state conduction. Here, we investigate the origin of the ultralow degree of disorder (E-a similar to 16 meV) and the ``bandlike'' negative temperature (T) coefficient of the field effect electron mobility: mu(e)(FET) (T) in a high performance (mu(e)(FET) > 2.5 cm(2) V-1 s(-1)) diketopyrrolopyrrole based semiconducting polymer. Models based on the framework of mobility edge with exponential density of states are invoked to explain the trends in transport. The temperature window over which the system demonstrates delocalized transport was tuned by a systematic introduction of disorder at the transport interface. Additionally, the Hall mobility (mu(e)(Hall)) extracted from Hall voltage measurements in these devices was found to be comparable to field effect mobility (mu(e)(FET)) in the high T bandlike regime. Comprehensive studies with different combinations of dielectrics and semiconductors demonstrate the effectiveness of rationale molecular design, which emphasizes uniform-energetic landscape and low reorganization energy.

Susceptibility Of strength development by lime in gypsiferous soil-A micro mechanistic study

The role of gypsum on the strength of lime treated soils after a long period of interaction is not well understood yet. The present study is performed to scrutinize the physical and strength behavior of lime treated soil with varying gypsum content. Lime and gypsum contents varying from 0 to 6% are considered in the present study for curing periods up to 28 days. To understand the long-term effects, the work has been extended up to 365 days, particularly with the use of 6% lime content and varying gypsum contents. Atterberg's limits turned out to be marginally affected by cation exchange. Unconfined compressive strength behavior of lime treated soil varies considerably with gypsum content and curing period. However, trivial alteration in strength is observed in the soil treated with lower lime content (up to 4%) and gypsum content up to 6%. On the contrary, strength of soil-6% lime mixture with addition of varying gypsum content shows acceleration in early strength at 14 days curing period. However, the strength at 28 days of curing declines but regains afterwards for 90 days. The trend at longer curing period for 180 and 365 days is, however, not unique but varies with gypsum contents. An attempt has been made to explain these changes on the basis of the form of gypsum, formation and conversion of reacted compounds (CASHH, CASH, MI and Ettringite). The proposed explanations were supported by detailed characterization through thermal analysis, XRD, SEM and EDAX studies of soil-lime-gypsum mixtures. (C) 2015 Elsevier B.V. All rights reserved.

Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes

AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 x 10(9)/cm(2) and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600-1900 cm(2)/V s at a carrier concentration of 0.7-0.9 x 10(13)/cm(2). Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner. (C) 2015 AIP Publishing LLC.

Mechanism of improvement in the strength and volume change behavior of lime stabilized soil

An attempt has been made to bring out the influence on strength and volume change behavior of fabric changes and new cementitious compound formation in a soil upon addition of various lime contents and with curing periods. The effects of changes in fabric of treatment with various lime contents (0, 2,4 and 6%) and with curing periods (0, 7, 14 and 28 days) have been evaluated by one-dimensional consolidation tests, in terms of void ratio changes and compressibility. The strength of soil treated with different lime contents with curing periods up to 28 days, and with the optimum lime content of 6% up to one year has been determined by unconfined compression tests. Comparison of effects of lime on the strength and volume change behavior of the soil brings out that the formation of flocculated fabric and cation exchange significantly reduces the compressibility of soil but marginally increases the strength. Cementation of soil particles and filling with cementitious compounds of the voids of flocculated fabric in the soil marginally reduces the compressibility but significantly increases the strength. Thus, the mechanism of volume change behavior of soil treated with lower lime content at short curing periods is distinctly different from that of the soil treated with optimum lime content at longer curing periods. This is consistent with the increase in the permeability caused by the addition from 2 to 4% lime and the decrease following the addition of 6% lime. Changes consistent with mechanical behavior have been determined by scanning electron microscope, X-ray diffraction and thermal analyses, energy dispersive X-ray spectrometer and pH value in microstructure, mineralogy, chemical composition and alkalinity, respectively. (C) 2015 Published by Elsevier B.V.

Many-Body Localization in the Presence of a Single-Particle Mobility Edge

In one dimension, noninteracting particles can undergo a localization-delocalization transition in a quasiperiodic potential. Recent studies have suggested that this transition transforms into a many-body localization (MBL) transition upon the introduction of interactions. It has also been shown that mobility edges can appear in the single particle spectrum for certain types of quasiperiodic potentials. Here, we investigate the effect of interactions in two models with such mobility edges. Employing the technique of exact diagonalization for finite-sized systems, we calculate the level spacing distribution, time evolution of entanglement entropy, optical conductivity, and return probability to detect MBL. We find that MBL does indeed occur in one of the two models we study, but the entanglement appears to grow faster than logarithmically with time unlike in other MBL systems.

Volume change behavior of lime treated gypseous soil - influence of mineralogy and microstructure

Series of oedometer tests and micro-analytical studies (XRD, SEM and EDAX) have been carried out to investigate the influence of varying gypsum content on swell, compressibility and permeability of lime treated montmorillonitic soil after curing for different period. Immediate swell is observed on inundation of compacted samples with water and continuously increased with gypsum content. However, changes in swell are found to be marginal with curing. This is attributed to the formation and growth of ettringite crystals by ionic reactions of aluminum calcium-sulfate in the presence of water which is confirmed through detailed micro-analysis. The higher swell in uncured specimens and gradual reduction in swell with increase in curing periods are due to relative dominance of formation and growth of ettringite and cementitious compounds, respectively. Also, the ionic reaction products are found to bear a significant influence on the compressibility and permeability behavior. (C) 2015 Elsevier B.V. All rights reserved.

Electron mobility in few-layer MoxW1-xS2

Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for electronics in order to potentially extend conventional transistor scaling and to exploit new device designs and architectures. Alloys form a key underpinning of any heterostructure device technology and therefore an understanding of their electronic properties is essential. In this paper, we study the intrinsic electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature, energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi's golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in MoxW1-xS2. While impurity scattering limits the mobility for low carrier densities (<2-4x10(12) cm(-2)), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in MoxW1-xS2. The LO phonon-limited and impurity-limited mobilities show opposing trends with respect to alloy mole fractions. The understanding of electron mobility in MoxW1-xS2 presented here is expected to enable the design and realization of heterostructures and devices based on alloys of MoS2 andWS(2).

Electron mobility in few-layer MoxW1-xS2

Heterostructures of two-dimensional (2D) layered materials are increasingly being explored for electronics in order to potentially extend conventional transistor scaling and to exploit new device designs and architectures. Alloys form a key underpinning of any heterostructure device technology and therefore an understanding of their electronic properties is essential. In this paper, we study the intrinsic electron mobility in few-layer MoxW1-xS2 as limited by various scattering mechanisms. The room temperature, energy-dependent scattering times corresponding to polar longitudinal optical (LO) phonon, alloy and background impurity scattering mechanisms are estimated based on the Born approximation to Fermi's golden rule. The contribution of individual scattering rates is analyzed as a function of 2D electron density as well as of alloy composition in MoxW1-xS2. While impurity scattering limits the mobility for low carrier densities (<2-4x10(12) cm(-2)), LO polar phonon scattering is the dominant mechanism for high electron densities. Alloy scattering is found to play a non-negligible role for 0.5 < x < 0.7 in MoxW1-xS2. The LO phonon-limited and impurity-limited mobilities show opposing trends with respect to alloy mole fractions. The understanding of electron mobility in MoxW1-xS2 presented here is expected to enable the design and realization of heterostructures and devices based on alloys of MoS2 andWS(2).