Role of bacterial growth conditions and adhesion in the bioleaching of chalcopyrite by Thiobacillus ferrooxidans

The role of growth conditions and adhesion of Thiobacillus ferrooxidans on the leaching of chalcopyrite was investigated. Thiobacillus ferrooxidans grown on sulfur, thiosulfate and ferrous ion substrates was used in this comparative study. Growth on sulfur, a solid substrate, requires bacterial adhesion unlike that required in the presence of soluble thiosulfate and ferrous ion in a mineral-salts medium. Solid substrate-grown cells showed higher rates of leaching than those grown in liquid media. An initial lag period noticed during leaching by solution-grown cells was absent when solid substrate-grown cells were used. Such a behavior is attributed to the presence of an inducible proteinaceous cell-surface appendage on the sulfur-grown cells. This appendage aids in bacterial adhesion onto the mineral surfaces. Such an appendage is absent in solution-grown cells, as substantiated by electrophoretic measurements. The importance of bacterial adhesion and the direct mechanism in leaching by Thiobacillus ferrooxidans are demonstrated.

The structural theory and physical organic chemistry

Woolley's revolutionary proposal that quantum mechanics does not sanction the concept of ''molecular structure'' - which is but only a ''metaphor'' - has fundamental implications for physical organic chemistry. On the one hand, the Uncertainty Principle limits the precision with which transition state structures may be defined; on the other, extension of the structure concept to the transition state may be unviable. Attempts to define transition states have indeed caused controversy. Consequences for molecular recognition, and a mechanistic classification, are also discussed.

Solvation dynamics in monohydroxy alcohols: Agreement between theory and different experiments

Recently three different experimental studies on ultrafast solvation dynamics in monohydroxy straight-chain alcohols (C-1-C-4) have been carried out, with an aim to quantify the time constant (and the amplitude) of the ultrafast component. The results reported are, however, rather different from different experiments. In order to understand the reason for these differences, we have carried out a detailed theoretical study to investigate the time dependent progress of solvation of both an ionic and a dipolar solute probe in these alcohols. For methanol, the agreement between the theoretical predictions and the experimental results [Bingemann and Ernsting J. Chem. Phys. 1995, 102, 2691 and Horng et al. J: Phys, Chern, 1995, 99, 17311] is excellent. For ethanol, propanol, and butanol, we find no ultrafast component of the time constant of 70 fs or so. For these three liquids, the theoretical results are in almost complete agreement with the experimental results of Horng et al. For ethanol and propanol, the theoretical prediction for ionic solvation is not significantly different from that of dipolar solvation. Thus, the theory suggests that the experiments of Bingemann and Ernsting and those of Horng et al. studied essentially the polar solvation dynamics. The theoretical studies also suggest that the experimental investigations of Joo et al. which report a much faster and larger ultrafast component in the same series of solvents (J. Chem. Phys. 1996, 104, 6089) might have been more sensitive to the nonpolar part of solvation dynamics than the polar part. In addition, a discussion on the validity of the present theoretical approach is presented. In this theory the ultrafast component arises from almost frictionless inertial motion of the individual solvent molecules in the force field of its neighbors.

Nonresonant edge slot antenna for phased array applications: Theory and experiment

The design and development of nonresonant edge slot antenna for phased array applications has been presented. The radiating element is a slot cut on the narrow wall of rectangular waveguide (edge slot). The admittance characteristics of the edge slot have been rigorously studied using a novel hybrid method. Nonresonant arrays have been fabricated using the present slot characterization data and the earlier published data. The experimentally measured electrical characteristics of the antenna are presented which clearly brings out the accuracy of the present method.

Potassium titanyl phosphate and its isomorphs: Growth, properties, and applications

Potassium titanyl phosphate (KTP) and its isomorphs have received enormous attention in the last 2 decades. In particular, KTP assumes importance due to its large nonlinear optic and electrooptic coefficients together with the broad thermal and angular acceptance for second harmonic generation. This article provides an overview of the material aspects, structural, physical, and chemical properties and device feasibility of the KTP family of crystals. Some of the current areas of research and development along with their significance in understanding the physical properties as well as device applications are addressed. Optical waveguide fabrication processes and characteristics with their relevance to the present-day technology are highlighted. Studies performed so far have enabled us to understand the fundamental aspects of these materials and what needs to be pursued vigorously is the exploitation of their device applications to the maximum extent.

Activities and their relation to cation distribution in NiAl2O4 MgAl2O4 spinel solid solutions

The activity of NiAl2O4 in NiAl2O4MgAl2O4 solid solutions has been measured by using a solid oxide galvanic cell of the type, Pt, Ni + NiAl2O4 + Al2O3(α)/CaOZrO2/Ni + NixMg1−xAl2O4 + Al2O3(α). Pt, in the temperature range 750–1150°C. The activities in the spinel solid solutions show negative deviations from Raoult's law. The cation distribution in the solid solutions has been calculated using site preference energies independent of composition for Ni2+, Mg2+, and Al3+ ions obtained from crystal field theory and measured cation disorder in pure NiAl2O4 and MgAl2O4, and assumi g ideal mixing of cations on the tetrahedral and octahedral positions. The calculated values correctly predict the decrease in the fraction, α, of Ni2+ ions on tetrahedral sites for 1>x>0.25, observed by Porta et al. [J. Solid State Chem.11, 135 (1974)] but do not support their tentative evidence for an increase in α for x < 0.25. The measured excess free energy of mixing can be completely accounted for by using either the calculated or the measured cation distributions. This suggests that the Madelung energy is approximately a linear function of composition in the solid solutions. The composition of NiOMgO solid solutions in equilibrium with NiAl2O4MgAl2O4 solid solutions has been calculated from the results and information available in literature.

Scattering theory and linear optimal control: Regulator and servo problems

In this paper, several known computational solutions are readily obtained in a very natural way for the linear regulator, fixed end-point and servo-mechanism problems using a certain frame-work from scattering theory. The relationships between the solutions to the linear regulator problem with different terminal costs and the interplay between the forward and backward equations have enabled a concise derivation of the partitioned equations, the forward-backward equations, and Chandrasekhar equations for the problem. These methods have been extended to the fixed end-point, servo, and tracking problems.

Growth, magnetotransport, and magnetic properties of ferromagnetic (In,Mn)Sb crystals

In1−xMnxSb crystals are grown with different Mn doping concentrations (x = 0.006, 0.01, 0.02, and 0.04) beyond the equilibrium solubility limit by the horizontal Bridgman technique. Structural, magnetic, and magnetotransport properties of the grown crystals are studied in the temperature range 1.4–300 K. Negative magnetoresistance and anomalous Hall effect are observed below 10 K. The anomalous Hall coefficient is found to be negative. The temperature dependence of the magnetization measurement shows a magnetic ordering below 10 K, which could arise from InMnSb alloy formation. Also, the saturation in magnetization observed even at room temperature suggests the existence of ferromagnetic MnSb clusters in the crystals, which has been verified by scanning electron microscopy studies. The carrier concentration increases with Mn doping, and this results in a decrease of resistivity. The carrier concentration and mobility at room temperature for the doped crystals are ∼ 2×1019 cm−3 and ∼ 200 cm2/V s, respectively. The observed anomalous Hall effect suggests the carrier mediated ferromagnetism below 10 K in In1−xMnxSb crystals.

Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE

In the present work, we report the growth of wurtzite InN epilayers on GaN/Si (1 1 1) substrate by plasma-assisted molecular beam epitaxy (PAMBE). The growth parameters such as indium flux, substrate temperature and RF power affect the crystallographic and morphological properties of InN layers, which were evaluated using high resolution X-ray diffraction (HRXRD) analysis and atomic force microscopy (AFM). It is found that excess indium (In) concentrations and surface roughness were increased with increase in In flux and growth temperature. The intensity of HRXRD (0 0 0 2) peak, corresponding to c-axis orientation has been increased and full width at half maxima (FWHM) has decreased with increase in RF power. It was found that highly c-axis oriented InN epilayers can be grown at 450 degrees C growth temperature, 450 W RF power and 1.30 x 10(-7) mbar In beam equivalent pressure (BEP). The energy gap of InN layers grown by optimizing growth conditions was determined by photoluminescence and optical absorption measurement. (C) 2011 Elsevier B.V. All rights reserved.

Galois Theory and Solvable Equations of Prime Degree

In this article we review classical and modern Galois theory with historical evolution and prove a criterion of Galois for solvability of an irreducible separable polynomial of prime degree over an arbitrary field k and give many illustrative examples.

Atomic layer deposition of ZrO2 thin films: Study of growth kinetics and dielectric behaviour

Thin films of ZrO2 have been deposited by ALD on Si(100) and SIMOX using two different metalorganic complexes of Zr as precursors. These films are characterized by X-ray diffraction, transmission and scanning electron microscopies, infrared spectroscopy, and electrical measurements. These show that amorphous ZrO2 films of high dielectric quality may be grown on Si(100) starting about 400degreesC. As the growth temperature is raised, the films become crystalline, the phase formed and the microstructure depending on precursor molecular structure. The phase of ZrO2 formed depends also on the relative duration of the precursor and oxygen pulses. XPS and IR spectroscopy show that films grown at low temperatures contain chemically unbound carbon, its extent depending on the precursor. C-V measurements show that films grown on Si(100) have low interface state density, low leakage current, a hysteresis width of only 10-250 mV and a dielectric constant of similar to16-25.