Two-Phase Flow With Phase Change in Porous Channels

Phase change heat transfer in porous media finds applications in various geological flows and modern heat pipes. We present a study to show the effect of phase change on heat transfer in a porous channel. We show that the ratio of Jakob numbers based on wall superheat and inlet fluid subcooling governs the liquid-vapor interface location in the porous channel and below a critical value of the ratio, the liquid penetrates all the way to the extent of the channel in the flow direction. In such cases, the Nusselt number is higher due to the proximity of the liquid-vapor interface to the heat loads. For higher heat loads or lower subcooling of the liquid, the liquid-vapor interface is pushed toward the inlet, and heat transfer occurs through a wider vapor region thus resulting in a lower Nusselt number. This study is relevant in the designing of efficient two-phase heat exchangers such as capillary suction based heat pipes where a prior estimation of the interface location for the maximum heat load is required to ensure that the liquid-vapor interface is always inside the porous block for its operation.

Two-Dimensional Noise-Predictive Maximum Likelihood Method for Magnetic Recording Channels

Noise-predictive maximum likelihood (NPML) is a well known signal detection technique used in partial response maximum likelihood (PRML) scheme in 1D magnetic recording channels. The noise samples colored by the partial response (PR) equalizer are predicted/ whitened during the signal detection using a Viterbi detector. In this paper, we propose an extension of the NPML technique for signal detection in 2D ISI channels. The impact of noise prediction during signal detection is studied in PRML scheme for a particular choice of 2D ISI channel and PR targets.

Prospects of zero Schottky barrier height in a graphene-inserted MoS2-metal interface

A low Schottky barrier height (SBH) at source/drain contact is essential for achieving high drive current in atomic layer MoS(2-)channel-based field effect transistors. Approaches such as choosing metals with appropriate work functions and chemical doping are employed previously to improve the carrier injection from the contact electrodes to the channel and to mitigate the SBH between the MoS2 and metal. Recent experiments demonstrate significant SBH reduction when graphene layer is inserted between metal slab (Ti and Ni) and MoS2. However, the physical or chemical origin of this phenomenon is not yet clearly understood. In this work, density functional theory simulations are performed, employing pseudopotentials with very high basis sets to get insights of the charge transfer between metal and monolayer MoS2 through the inserted graphene layer. Our atomistic simulations on 16 different interfaces involving five different metals (Ti, Ag, Ru, Au, and Pt) reveal that (i) such a decrease in SBH is not consistent among various metals, rather an increase in SBH is observed in case of Au and Pt; (ii) unlike MoS2-metal interface, the projected dispersion of MoS2 remains preserved in any MoS2-graphene- metal system with shift in the bands on the energy axis. (iii) A proper choice of metal (e.g., Ru) may exhibit ohmic nature in a graphene-inserted MoS2-metal contact. These understandings would provide a direction in developing high-performance transistors involving heteroatomic layers as contact electrodes. (c) 2016 AIP Publishing LLC.

Instability in an amorphous In-Ga-Zn-O field effect transistor upon water exposure

The instability of an amorphous indium-gallium-zinc oxide (IGZO) field effect transistor is investigated upon water treatment. Electrical characteristics are measured before, immediately after and a few days after water treatment in ambient as well as in vacuum conditions. It is observed that after a few days of water exposure an IGZO field effect transistor (FET) shows relatively more stable behaviour as compared to before exposure. Transfer characteristics are found to shift negatively after immediate water exposure and in vacuum. More interestingly, after water exposure the off current is found to decrease by 1-2 orders of magnitude and remains stable even after 15 d of water exposure in ambient as well as in vacuum, whereas the on current more or less remains the same. An x-ray photoelectron spectroscopic study is carried out to investigate the qualitative and quantitative analysis of IGZO upon water exposure. The changes in the FET parameters are evaluated and attributed to the formation of excess oxygen vacancies and changes in the electronic structure of the IGZO bulk channel and at the IGZO/SiO2 interface, which can further lead to the formation of subgap states. An attempt is made to distinguish which parameters of the FET are affected by the changes in the electronic structure of the IGZO bulk channel and at the IGZO/SiO2 interface separately.