Tethering preferences of domain families co-occurring in multi-domain proteins

Genomic data of several organisms have revealed the presence of a vast repertoire of multi-domain proteins. The role played by individual domains in a multi-domain protein has a profound influence on the overall function of the protein. In the present analysis an attempt has been made to better understand the tethering preferences of domain families that occur in multi-domain proteins. The analysis has been carried out on an exhaustive dataset of 2 961 898 sequences of proteins from 930 organisms, where 741 274 proteins are comprised of at least two domain families. For every domain family, the number of other domain families with which it co-occurs within a protein in this dataset has been enumerated and is referred to as the tethering number of the domain family. It was found that, in the general dataset, the AAA ATPase family and the family of Ser/Thr kinases have the highest tethering numbers of 450 and 444 respectively. Further analysis reveals significant correlation between the number of members in a family and its tethering number. Positive correlation was also observed for the extent of a sequence and functional diversity within a family and the tethering numbers of domain families. Domain families that are present ubiquitously in diverse organisms tend to have large tethering numbers, while organism/kingdom-specific families have low tethering numbers. Thus, the analysis uncovers how domain families recombine and evolve to give rise to multi-domain proteins.

A Novel Design Method for SOGI-PLL for Minimum Settling Time and Low Unit Vector Distortion

Phase-locked loops (PLLs) are necessary in grid connected systems to obtain information about the frequency, amplitude and phase of the grid voltage. In stationary reference frame control, the unit vectors of PLLs are used for reference generation. It is important that the PLL performance is not affected significantly when grid voltage undergoes amplitude and frequency variations. In this paper, a novel design for the popular single-phase PLL topology, namely the second-order generalized integrator (SOGI) based PLL is proposed which achieves minimum settling time during grid voltage amplitude and frequency variations. The proposed design achieves a settling time of less than 27.7 ms. This design also ensures that the unit vectors generated by this PLL have a steady state THD of less than 1% during frequency variations of the grid voltage. The design of the SOGI-PLL based on the theoretical analysis is validated by experimental results.

Secrecy in the 2-User Symmetric Deterministic Interference Channel with Transmitter Cooperation

This work presents novel achievable schemes for the 2-user symmetric linear deterministic interference channel with limited-rate transmitter cooperation and perfect secrecy constraints at the receivers. The proposed achievable scheme consists of a combination of interference cancelation, relaying of the other user's data bits, time sharing, and transmission of random bits, depending on the rate of the cooperative link and the relative strengths of the signal and the interference. The results show, for example, that the proposed scheme achieves the same rate as the capacity without the secrecy constraints, in the initial part of the weak interference regime. Also, sharing random bits through the cooperative link can achieve a higher secrecy rate compared to sharing data bits, in the very high interference regime. The results highlight the importance of limited transmitter cooperation in facilitating secure communications over 2-user interference channels.

GdAlO3:Eu3+:Bi3+ nanophosphor: Synthesis and enhancement of red emission for WLEDs

GdAlO3, GdAlO3:Eu3+ and GdAlO3:Eu3+:Bi3+ nanophosphors were synthesised by solution combustion technique. Pure orthorhombic phase was obtained from powder X-ray diffraction (PXRD) studies. Scanning electron microscopy (SEM) micrographs showed the porous, agglomerated and irregular shaped particles. The particle size obtained by transmission electron microscopy (TEM) measurement was in good agreement with the values obtained by Debye Scherrer's and W-H plots. The selected area electron diffraction (SAED) pattern show single crystalline nature of the sample. Photoluminescence (PL) measurements were carried out for GdAlO3:Eu3+ and GdAlO3:Eu3+:Bi3+ phosphors excited at a wavelength of 274 nm. The characteristic emission peaks of Eu3+ ions were recorded at 590, 614, 655 and 695 nm corresponding to D-5(0) -> F-7(J) (J = 1, 2, 3, 4) transitions respectively. However, with addition of Bi3+ ions in GdAlO3:Eu3+, PL intensity drastically enhanced. Orange red color was tuned to deep red color with the addition of Bi3+ ions in GdAlO3:Eu3+ phosphor. Therefore, the phosphor was highly useful as red component in WLEDs. A single well resoled glow peak at 225 degrees C was recorded in GdAlO3 and GdAlO3:Eu3+. Further, with addition of Bi3+ ions, an additional peak at 300 degrees C was recorded. TL glow curves of different UV-exposed GdAlO3:Eu3+:Bi3+ show two TL peaks at 207 and 300 degrees C respectively. The 207 degrees C peak show simple glow peak structure and its intensity increases linearly up to 25 mm and after that it decrease. (C) 2014 Elsevier B.V. All rights reserved.

Influence of crystallographic texture and microstructure on elastic modulus of steels

In this paper the effects of crystallographic texture and microstructure on the elastic modulus of different grades of steel have been collected from the available literature and put in one place. It is expected that this will help researchers in their understanding of both the fundamental and the practical aspects of the different grades of steel used for various purposes.

SnO2 nanowire anchored graphene nanosheet matrix for the superior performance of Li-ion thin film battery anode

All solid state batteries are essential candidate for miniaturizing the portable electronics devices. Thin film batteries are constructed by layer by layer deposition of electrode materials by physical vapour deposition method. We propose a promising novel method and unique architecture, in which highly porous graphene sheet embedded with SnO2 nanowire could be employed as the anode electrode in lithium ion thin film battery. The vertically standing graphene flakes were synthesized by microwave plasma CVD and SnO2 nanowires based on a vapour-liquid-solid (VLS) mechanism via thermal evaporation at low synthesis temperature (620 degrees C). The graphene sheet/SnO2 nanowire composite electrode demonstrated stable cycling behaviours and delivered a initial high specific discharge capacity of 1335 mAh g(-1) and 900 mAh g(-1) after the 50th cycle. Furthermore, the SnO2 nanowire electrode displayed superior rate capabilities with various current densities.

THEORY OF NEWFORMS OF HALF-INTEGRAL WEIGHT

We set up the theory of newforms of half-integral weight on Gamma(0)(8N) and Gamma(0)(16N), where N is odd and squarefree. Further, we extend the definition of the Kohnen plus space in general for trivial character and also study the theory of newforms in the plus spaces on Gamma(0)(8N), Gamma(0)(16N), where N is odd and squarefree. Finally, we show that the Atkin-Lehner W-operator W-4 acts as the identity operator on S-2k(new)(4N), where N is odd and squarefree. This proves that S-2k(-)(4) = S-2k(4).

THREE-LAYER FLUID FLOW OVER A SMALL OBSTRUCTION ON THE BOTTOM OF A CHANNEL

Many boundary value problems occur in a natural way while studying fluid flow problems in a channel. The solutions of two such boundary value problems are obtained and analysed in the context of flow problems involving three layers of fluids of different constant densities in a channel, associated with an impermeable bottom that has a small undulation. The top surface of the channel is either bounded by a rigid lid or free to the atmosphere. The fluid in each layer is assumed to be inviscid and incompressible, and the flow is irrotational and two-dimensional. Only waves that are stationary with respect to the bottom profile are considered in this paper. The effect of surface tension is neglected. In the process of obtaining solutions for both the problems, regular perturbation analysis along with a Fourier transform technique is employed to derive the first-order corrections of some important physical quantities. Two types of bottom topography, such as concave and convex, are considered to derive the profiles of the interfaces. We observe that the profiles are oscillatory in nature, representing waves of variable amplitude with distinct wave numbers propagating downstream and with no wave upstream. The observations are presented in tabular and graphical forms.

Phase-field elasticity model based on mechanical jump conditions

Computational models based on the phase-field method typically operate on a mesoscopic length scale and resolve structural changes of the material and furthermore provide valuable information about microstructure and mechanical property relations. An accurate calculation of the stresses and mechanical energy at the transition region is therefore indispensable. We derive a quantitative phase-field elasticity model based on force balance and Hadamard jump conditions at the interface. Comparing the simulated stress profiles calculated with Voigt/Taylor (Annalen der Physik 274(12):573, 1889), Reuss/Sachs (Z Angew Math Mech 9:49, 1929) and the proposed model with the theoretically predicted stress fields in a plate with a round inclusion under hydrostatic tension, we show the quantitative characteristics of the model. In order to validate the elastic contribution to the driving force for phase transition, we demonstrate the absence of excess energy, calculated by Durga et al. (Model Simul Mater Sci Eng 21(5):055018, 2013), in a one-dimensional equilibrium condition of serial and parallel material chains. To validate the driving force for systems with curved transition regions, we relate simulations to the Gibbs-Thompson equilibrium condition

Thermoelectric properties of Co substituted synthetic tetrahedrite

Transition metal atom (Co) substituted synthetic tetrahedrite compounds Cu12-xCoxSb4S13 (x = 0, 0.5, 1.0, 1.5, 2.0) were prepared by solid state synthesis. X-Ray Diffraction (XRD) patterns revealed tetrahedrite as the main phase, whereas for the compounds with x = 0, 0.5 a trace of impurity phase Cu3SbS4 was observed. The surface morphology showed a large grain size with low porosity, which indicated appropriate compaction for the hot pressed samples. The phase purity, as monitored by Electron Probe Micro Analysis (EPMA) is in good agreement with the XRD data. The elemental composition for all the compounds almost matched with the nominal composition. The X-ray Photoelectron Spectroscopy (XPS) data showed that Cu existed in both +1 and +2 states, while Sb exhibited +3 oxidation states. Elastic modulus and hardness showed a systematic variation with increasing Co content. The electrical resistivity and Seebeck coefficient increased with increase in the doping content due to the decrease in the number of carriers caused by the substitution of Co2+ on the Cu1+ site. The positive Seebeck coefficient for all samples indicates that the dominant carriers are holes. A combined effect of resistivity and Seebeck coefficient leads to the maximum power factor of 1.76 mW m(-1) K-2 at 673 K for Cu11.5Co0.5Sb4S13. This could be due to the optimization in the carrier concentration by the partial substitution of Co2+ on both the Cu1+ as well as Cu2+ site at the same doping levels, which is also supported by the XPS data. The total thermal conductivity systematically decreased with increase of doping content as it is mainly influenced by the decrease of carrier thermal conductivity. The maximum thermoelectric figure of merit zT = 0.98 was obtained at 673 K for Cu11.5Co0.5Sb4S13. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Sulfurization of sputtered Ag-In precursors for AgInS2 solar cell absorber layers

Silver indium sulfide (AgInS2) thin films are deposited by sequential sputtering of metallic precursor Ag/In] followed by sulfurization. Effect of substrate temperature (Tsub) during sulfurization process on the film growth is studied by varying the substrate temperature from 350 to 500 degrees C. Films prepared above 350 degrees C showed a mixture of orthorhombic and tetragonal phases of AgInS2 with tetragonal phase being dominant. Better crystalline, nearly stoichiometric and p-type films are obtained at a substrate temperature of 500 degrees C. The characteristic A(1) mode of AgInS2 chalcopyrite structure is observed in the Raman spectra at 274 cm(-1) for the films prepared above 350 degrees C. The grain size of the film increases from 489 to 895 nm with the increase in substrate temperature. The binding energies of the constituent elements are determined using XPS. The band gap of AgInS2 films is in the range of 1.64-1.92 eV and the absorption coefficient is found to be >10(4) cm(-1). Preliminary studies on the AgInS2/ZnS solar cell showed an efficiency of 0.3%. (C) 2015 Elsevier B.V. All rights reserved.