Effect of RF power on the structural, optical and gas sensing properties of RF-sputtered Al doped ZnO thin films

The effect of Radio Frequency (RF) power on the properties of magnetron sputtered Al doped ZnO thin films and the related sensor properties are investigated. A series of 2 wt% Al doped ZnO; Zn0.98Al0.02O (AZO) thin films prepared with magnetron sputtering at different RF powers, are examined. The structural results reveal a good adhesive nature of thin films with quartz substrates as well as increasing thickness of the films with increasing RF power. Besides, the increasing RF power is found to improve the crystallinity and grain growth as confirmed by X-ray diffraction. On the other hand, the optical transmittance is significantly influenced by the RF power, where the transparency values achieved are higher than 82% for all the AZO thin films and the estimated optical band gap energy is found to decrease with RF power due to an increase in the crystallite size as well as the film thickness. In addition, the defect induced luminescence at low temperature (77 K) and room temperature (300 K) was studied through photoluminescence spectroscopy, it is found that the defect density of electronic states of the Al3+ ion increases with an increase of RF power due to the increase in the thickness of the film and the crystallite size. The gas sensing behavior of AZO films was studied for NO2 at 350 degrees C. The AZO film shows a good response towards NO2 gas and also a good relationship between the response and the NO2 concentration, which is modeled using an empirical formula. The sensing mechanism of NO2 is discussed.

CuIn1-xAlxSe2 Thin Films Grown by Co-Sputtering and Modified Selenization: Application in Flexible Solar Cells

Thin films of CuIn1-xAlxSe2 (CIAS) were grown on the flexible 10 micrometer thin stainless steel substrates, by dc co-sputtering from the elemental cathodes, followed by annealing with modified selenization. CuInAl alloyed precursor films were selenized both by noble gas assisted Se vapor transport in a tubular furnace and vacuum evaporation of Se in an evaporation chamber. CIAS thin films were optimized for better adhesion. X-ray diffraction, scanning electron microscopy, and UV-visible absorption spectroscopy were used to characterize the selenized films. The composition of CIAS films was varied by substituting In with Al in CuInSe2 (CIS) from 0 <= x <= 0.65 (x = Al/Al+In). Lattice parameters, average crystallite sizes, and compact density of the films, decreased when compared to CIS and (112) peak shifted to higher Bragg's angle, upon Al incorporation. The dislocation density and strain were found to increase with Al doping. Solar cells with SS/Mo/CIAS/CdS/iZnO: AZnO/Al configuration were fabricated and were tested for current-voltage characteristics for various `x' values, under Air Mass 1.5 Global one sun illumination. The best CIAS solar cell showed the efficiency of 6.8%, with x = 0.13, Eg = 1.17 eV, fill factor 45.04, and short circuit current density J(sc) 30 mA/cm(2).

Evidence for 3D isotropic long range spin-spin interaction near the ferromagnetic transition in bulk and thin film SrRuO3

In the case of metallic ferromagnets there has always been a controversy, i.e. whether the magnetic interaction is itinerant or localized. For example SrRuO3 is known to be an itinerant ferromagnet where the spin-spin interaction is expected to be mean field in nature. However, it is reported to behave like Ising, Heisenberg or mean field by different groups. Despite several theoretical and experimental studies and the importance of strongly correlated systems, the experimental conclusion regarding the type of spin-spin interaction in SrRuO3 is lacking. To resolve this issue, we have investigated the critical behaviour in the vicinity of the paramagnetic-ferromagnetic phase transition using various techniques on polycrystalline as well as (001) oriented SrRuO3 films. Our analysis reveals that the application of a scaling law in the field-cooled magnetization data extracts the value of the critical exponent only when it is measured at H -> 0. To substantiate the actual nature without any ambiguity, the critical behavior is studied across the phase transition using the modified Arrott plot, Kouvel-Fisher plot and M-H isotherms. The critical analysis yields self-consistent beta, gamma and delta values and the spin interaction follows the long-range mean field model. Further the directional dependence of the critical exponent is studied in thin films and it reveals the isotropic nature. It is elucidated that the different experimental protocols followed by different groups are the reason for the ambiguity in determining the critical exponents in SrRuO3.

Structural and Magnetic Properties of Amorphous Tb-Dy-Fe-Co Thin Films

This paper reports the effect of film thickness (50, 200, 400 and 800 nm) on the structural and magnetic properties of amorphous Tb-Dy-Fe-Co alloy thin films. All the films are found to exhibit perpendicular magnetic anisotropy (PMA) irrespective of the film thickness. The PMA is found to decrease with increase in film thickness due to the decrease in the magnetic texture and anisotropy energy. While the coercivity deduced from the out-of-plane magnetization curve increases with increasing film thickness, the in-plane coercivity exhibits weak thickness dependence. The irreversibility point in the thermo-magnetic curves obtained from field-cooled and zero-field-cooled measurements along the out-of-plane direction is found to shift towards higher temperature compared to the measurements in in-plane directions, indicating the presence of strong PMA.

Phase dependent photocatalytic activity of Ag loaded TiO2 films under sun light

Well-crystallized anatase and mixed (anatase-rutile) phase TiO2 thin films were deposited by DC magnetron sputtering technique at various DC powers in the range of 80-140 W. Pure anatase phase was observed in the TiO2 films deposited at low power of 80 W. Films deposited at 120 W were composed of both anatase and rutile phases. At higher power of 140 W, the films are rutile dominated and the rutile percentage increased from 0 to 82% with increase of DC power. The same results of phase change were confirmed by Raman studies. The surface morphology of the TiO2 films showed that the density of the films increased with increase of sputter power. The optical band gap of the films varied from 3.35 to 3.14 eV with increase of DC power. The photocatalytic activity of the TiO2 films increased with increasing DC power up to 120 W and after that it decreases. We found that the TiO2 films deposited at 120 W with 48% of rutile phase, exhibited high photocatalytic activity (43% of degradation) under UV light compared with other TiO2 films. After loading the optimized Ag nanoparticles on the mixed phase TiO2 films, the photocatalytic activity shifted from UV to visible region with enhancement of photocatalytic activity (55% of degradation). (C) 2015 Elsevier B.V. All rights reserved.

Resputtering Effect on Nanocrystalline Ni-Ti Alloy Films

We report on the effect of resputtering on the properties of nanocrystalline Ni-Ti alloy thin films deposited using co-sputtering of Ni and Ti targets. In order to facilitate the formation of nanocrystalline phases, films were deposited at room temperature and 573 K (300 A degrees C) with substrate bias voltage of -100 V. The influence of substrate material on the composition, surface topography microstructure, and phase formations of nanocrystalline Ni-Ti thin films was also systematically investigated. The preferential resputtering of Ti adatoms was lesser for Ni-Ti films deposited on quartz substrate owing to high surface roughness of 4.87 nm compared to roughness value of 1.27 nm for Si(100) substrate.

Solution processed Cu2SnS3 thin films for visible and infrared photodetector applications

The Cu2SnS3 thin films were deposited using an economic, solution processible, spin coating technique. The films were found to possess a tetragonal crystal structure using X-ray diffraction. The film morphology and the particle size were determined using scanning electron microscopy. The various planes in the crystal were observed using transmission electron microscopy. The optimum band gap of 1.23 eV and a high absorption coefficient of 104 cm-1 corroborate its application as a photoactive material. The visible and infrared (IR) photo response was studied for various illumination intensities. The current increased by one order from a dark current of 0.31 mu A to a current of 1.78 mu A at 1.05 suns and 8.7 mu A under 477.7 mW/cm(2) IR illumination intensity, at 3 V applied bias. The responsivity, sensitivity, external quantum efficiency and specific detectivity were found to be 10.93 mA/W, 5.74, 2.47% and 3.47 x 10(10) Jones respectively at 1.05 suns and 16.32 mA/W, 27.16, 2.53% and 5.10 x 10(10) Jones respectively at 477.7 mW/cm(2) IR illumination. The transient photoresponse was measured both for visible and IR illuminations. (C) 2016 Author(s).

Optical and Morphological Properties of Sol Gel derived Titanium dioxide Films

Titanium oxide (Titania) thin films were synthesized on different substrates via the sol-gel dip-coating method using alkoxide solution. Some selected samples were also prepared with different percentage of Lead (Pb). The influence of Pb addition in precursor sol on the optical properties of titanium dioxide thin films was studied. The optical transmittance in the visible region has increased with increase in weight percentage of lead. The refractive index was slightly decreased with Pb addition. Crystallization of these coatings was achieved through thermal annealing at temperatures above 400 degrees C. The structural properties and surface morphology of the crystallized coatings were studied by Scanning Electron Microscopy. Increase in average grain size from 250 nm to 350 nm with increase in Pb concentration is observed. Films were appeared to more coarse with increase in Pb addition. An increase in Pb addition resulted increase in average roughness from 12 nm to 25 nm.

Effect of W addition on the electrical switching of VO2 thin films

Vanadium Oxide has been a frontrunner in the field of oxide electronics because of its metal-insulator transition (MIT). The interplay of different structures of VO2 has played a crucial role in deciding the magnitude of the first order MIT. Substitution doping has been found to introduce different polymorphs of VO2. Hence the role of substitution doping in stabilizing the competing phases of VO2 in the thin film form remains underexplored. Consequently there have been reports both discounting and approving such a stabilization of competing phases in VO2. It is reported in the literature that the bandwidth of the hysteresis and transition temperature of VO2 can be tuned by substitutional doping of VO2 with W. In this work, we have adopted a novel technique called, Ultrasonic Nebulized Spray Pyrolysis of Aqueous Combustion Mixture (UNSPACM) to deposit VO2 and W- doped VO2 as thin films. XRD and Raman spectroscopy were used to investigate the role of tungsten on the structure of VO2 thin films. Morphology of the thin films was found to be consisting of globular and porous nanoparticles of size similar to 20nm. Transition temperature decreased with the addition of W. We found that for 2.0 at % W doping in VO2, the transition temperature has reduced from 68 degrees C to 25 degrees C. It is noted that W-doping in the process of reducing the transition temperature, alters the local structure and also increases room temperature carrier concentration. (c) 2016 Author(s).

Critical investigation of high performance spin-coated high-kappa titania thin films based MOS capacitor

We report the tunable dielectric constant of titania films with low leakage current density. Titanium dioxide (TiO2) films of three different thicknesses (36, 63 and 91 nm) were deposited by the consecutive steps of solution preparation, spin-coating, drying, and firing at different temperatures. The problem of poor adhesion between Si substrate and TiO2 insulating layer was resolved by using the plasma activation process. The surface roughness was found to increase with increasing thickness and annealing temperature. The electrical investigation was carried out using metal-oxide-semiconductor structure. The flat band voltage (V-FB), oxide trapped charge (Q(ot)), dielectric constant (kappa) and equivalent oxide thicknesses are calculated from capacitance-voltage (C-V) curves. The C-V characteristics indicate a thickness dependent dielectric constant. The dielectric constant increases from 31 to 78 as thickness increases from 36 to 91 nm. In addition to that the dielectric constant was found to be annealing temperature and frequency dependent. The films having thickness 91 nm and annealed at 600 A degrees C shows the low leakage current density. Our study provides a broad insight of the processing parameters towards the use of titania as high-kappa insulating layer, which might be useful in Si and polymer based flexible devices.