Dielectric and electrical studies of Pr3+ doped nano CaSiO3 perovskite ceramics

CaSiO3 nano-ceramic powder doped with Pr3+ has been prepared by solution combustion method. The powder Ca0.5Pr0.05SiO3 is investigated for its dielectric and electrical properties at room temperature to study the effect of doping. The sample is characterized by X-ray diffraction and infrared spectroscopy. The size of either of volume elements of CaSiO3:Pr3+ estimated from transmission electron microscopy is about 180-200 nm. The sample shows colossal dielectric response at room temperature. This colossal dielectric behaviour follows Debye-type relaxation and can be explained by Maxwell-Wagner (MW) polarization. However, analysis of impedance and electric modulus data using Cole-Cole plot shows that it deviates from ideal Debye behaviour resulting from the distribution of relaxation times. The distribution in the relaxation times may be attributed to existence of electrically heterogeneous grains, insulating grain boundary, and electrode contact regions. Doping, thus, results in substantial modifications in the dielectric and electrical properties of the nano-ceramic CaSiO3. (C) 2013 Elsevier Ltd. All rights reserved.

Investigation on the Sr-doped ceria Ce1-xSrO2-delta (x=0.05-0.2) as an electrolyte for intermediate temperature SOFC

The effect of Sr doping in CeO2 for its use as solid electrolytes for intermediate temperature solid oxide fuel cells (IT-SOFCs) has been explored here. Ce1-xSrxO2-delta (x = 0.05-0.2) are successfully synthesized by citrate-complexation method. XRD, Raman, FT-IR, FE-SEM/EDX and electrochemical impedance spectra are used for structural and electrical characterizations. The formation of well crystalline cubic fluorite structured solid solution is observed for x = 0.05 based on XRD and Raman spectra. For compositions i.e., x > 0.05, however, a secondary phase of SrCeO3 is confirmed by the peak at 342 cm(-1) in Raman spectra. Although the oxygen ion conductivity was found to decrease with increase in x, based on ac-impedance studies, conductivity of Ce0.95Sr0.05O2-delta was found to be higher than of Ce0.95Gd0.1O2-delta and Ce0.8Gd0.2O2-delta. The decrease in conductivity of Ce1-xSrxO2-delta with increasing dopant concentration is ascribed to formation of impurity phase SrCeO3 as well as the formation of neutral associated pairs, Se `' Ce V-o. The activation energies are found to be 0.77, 0.83, 0.85 and 0.90 eV for x = 0.05, 0.1, 0.15 and 0.20, respectively. (C) 2014 Elsevier B.V. All rights reserved.

Tuning of the electro-mechanical behavior of the cellular carbon nanotube structures with nanoparticle dispersions

The mechanical and electrical characteristics of cellular network of the carbon nanotubes (CNT) impregnated with metallic and nonmetallic nanoparticles were examined simultaneously by employing the nanoindentation technique. Experimental results show that the nanoparticle dispersion not only enhances the mechanical strength of the cellular CNT by two orders of magnitude but also imparts variable nonlinear electrical characteristics; the latter depends on the contact resistance between nanoparticles and CNT, which is shown to depend on the applied load while indentation. Impregnation with silver nanoparticles enhances the electrical conductance, the dispersion with copper oxide and zinc oxide nanoparticles reduces the conductance of CNT network. In all cases, a power law behavior with suppression in the differential conductivity at zero bias was noted, indicating electron tunneling through the channels formed at the CNT-nanoparticle interfaces. These results open avenues for designing cellular CNT foams with desired electro-mechanical properties and coupling. (C) 2014 AIP Publishing LLC.

Role of pH controlled DNA secondary structures in the reversible dispersion/precipitation and separation of metallic and semiconducting single-walled carbon nanotubes

Single-stranded DNA (ss-DNA) oligomers (dA(20), d(C(3)TA(2))(3)C-3] or dT(20)) are able to disperse single-walled carbon nanotubes (SWNTs) in water at pH 7 through non-covalent wrapping on the nanotube surface. At lower pH, an alteration of the DNA secondary structure leads to precipitation of the SWNTs from the dispersion. The structural change of dA(20) takes place from the single-stranded to the A-motif form at pH 3.5 while in case of d(C(3)TA(2))(3)C-3] the change occurs from the single-stranded to the i-motif form at pH 5. Due to this structural change, the DNA is no longer able to bind the nanotube and hence the SWNT precipitates from its well-dispersed state. However, this could be reversed on restoring the pH to 7, where the DNA again relaxes in the single-stranded form. In this way the dispersion and precipitation process could be repeated over and over again. Variable temperature UV-Vis-NIR and CD spectroscopy studies showed that the DNA-SWNT complexes were thermally stable even at similar to 90 degrees C at pH 7. Broadband NIR laser (1064 nm) irradiation also demonstrated the stability of the DNA-SWNT complex against local heating introduced through excitation of the carbon nanotubes. Electrophoretic mobility shift assay confirmed the formation of a stable DNA-SWNT complex at pH 7 and also the generation of DNA secondary structures (A/i-motif) upon acidification. The interactions of ss-DNA with SWNTs cause debundling of the nanotubes from its assembly. Selective affinity of the semiconducting SWNTs towards DNA than the metallic ones enables separation of the two as evident from spectroscopic as well as electrical conductivity studies.

Low temperature and self catalytic growth of ultrafine ITO nanowires by electron beam evaporation method and their optical and electrical properties

We report the self catalytic growth of Sn-doped indium oxide (ITO) nanowires (NWs) over a large area glass and silicon substrates by electron beam evaporation method at low substrate temperatures of 250-400 degrees C. The ITO NWs growth was carried out without using an additional reactive oxygen gas and a metal catalyst particle. Ultrafine diameter (similar to 10-15 nm) and micron long ITO NWs growth was observed in a temperature window of 300-400 degrees C. Transmission electron microscope studies confirmed single crystalline nature of the NWs and energy dispersive spectroscopy studies on the NWs confirmed that the NWs growth proceeds via self catalytic vapor-liquid-solid (VLS) growth mechanism. ITO nanowire films grown on glass substrates at a substrate temperature of 300-400 degrees C have shown similar to 2-6% reflection and similar to 70-85% transmission in the visible region. Effect of deposition parameters was systematically investigated. The large area growth of ITO nanowire films would find potential applications in the optoelectronic devices. (C) 2014 Elsevier Ltd. All rights reserved.

Structural, Electrical and Magnetic Behaviour of FeTe0.5Se0.5 Superconductor

We report the synthesis as well as structural and physical properties of the bulk polycrystalline FeTe and FeTe0.5Se0.5 compounds. These samples are synthesised by the solid state-reaction method via vacuum encapsulation. Both studied compounds are crystallized in a tetragonal phase with space group P4/nmm. The parent FeTe compound shows an anomaly in resistivity measurement at around 78 K, which is due to the structural change along with a magnetic phase transition. The superconductivity in the FeTe0.5Se0.5 sample at 13 K is confirmed by the resistivity measurements. DC magnetisation along with an isothermal (M-H) loop shows that FeTe0.5Se0.5 possesses bulk superconductivity. The upper critical field is estimated through resistivity rho (T,H) measurements using Gingzburg-Landau (GL) theory and is above 50 T with 50 % resistivity drop criterion. The origin of the resistive transition broadening under magnetic field is investigated by thermally activated flux flow. The magnetic field dependence of the activation energy of the flux motion is discussed.

Dielectric relaxation and anti-ferromagnetic coupling of BiEu03 and BiGd03

BiEuO3 (BE) and BiGdO3 (BG) are synthesized by the solid-state reaction technique. Rietveld refinement of the X-ray diffraction data shows that the samples are crystallized in cubic phase at room temperature having Fm3m symmetry with the lattice parameters of 5.4925(2) and 5.4712(2) A for BE and BG, respectively. Raman spectra of the samples are investigated to obtain the phonon modes of the samples. The dielectric properties of the samples are investigated in the frequency range from 42 Hz to 1.1 MHz and in the temperature range from 303 K to 673 K. An analysis of the real and imaginary parts of impedance is performed assuming a distribution of relaxation times as confirmed by the Cole-Cole plots. The frequency-dependent maxima in the loss tangent are found to obey an Arrhenius law with activation energy similar to 1 eV for both the samples. The frequency-dependent electrical data are also analyzed in the framework of conductivity formalism. Magnetization of the samples are measured under the field cooled (EC) and zero field cooled (ZFC) modes in the temperature range from 5 K to 300 K applying a magnetic Field of 500 Oe. The FC and ZFC susceptibilities show that BE is a Van Vleck paramagnetic material with antiferromagnetic coupling at low temperature whereas BG is an anti-ferromagnetic system. The results are substantiated by the M-11 loops of the materials taken at 5 K in the ZFC mode. (C) 2014 Elsevier B.V. All rights reserved

Temperature dependent electrical behaviour of Cu2SnS3 films

The temperature dependent electrical properties of the dropcasted Cu2SnS3 films have been measured in the temperature range 140 K to 317 K. The log I versus root V plot shows two regions. The region at lower bias is due to electrode limited Schottky emission and the higher bias region is due to bulk limited Poole Frenkel emission. The ideality factor is calculated from the ln I versus V plot for different temperatures fitted with the thermionic emission model and is found to vary from 6.05 eV to 12.23 eV. This large value is attributed to the presence of defects or amorphous layer at the Ag / Cu2SnS3 interface. From the Richardson's plot the Richardson's constant and the barrier height were calculated. Owing to the inhomogeneity in the barrier heights, the Richardson's constant and the barrier height were also calculated from the modified Richardson's plot. The I-V-T curves were also fitted using the thermionic field emission model. The barrier heights were found to be higher than those calculated using thermionic emission model. From the fit of the I-V-T curves to the field emission model, field emission was seen to dominate in the low temperature range of 140 K to 177 K. The temperature dependent current graphs show two regions of different mechanisms. The log I versus 1000/T plot gives activation energies E-a1 = 0.367095 - 0.257682 eV and E-a2 = 0.038416 - 0.042452 eV. The log ( I/T-2) versus 1000/T graph gives trap depths Phi(o1) = 0.314159 - 0.204752 eV and Phi(o2) = 0.007425- 0.011163 eV. With increasing voltage the activation energy E-a1 and the trap depth Phi(o1) decrease. From the ln (IT1/ 2) versus 1/T-1/ 4 graph, the low temperature region is due to variable range hopping mechanism and the high temperature region is due to thermionic emission. (C) 2014 Author(s).

Electrical switching, SET-RESET, and Raman scattering studies on Ge15Te80-xIn5Agx glasses

Bulk Ge15Te85-xIn5Agx glasses are shown to exhibit electrical switching with switching/threshold voltages in the range of 70-120V for a sample thickness of 0.3 mm. Further, the samples exhibit threshold or memory behavior depending on the ON state current. The compositional studies confirm the presence of an intermediate phase in the range 8 <= x <= 16, revealed earlier by thermal studies. Further, SET-RESET studies have been performed by these glasses using a triangular pulse of 6 mA amplitude (for SET) and 21 mA amplitude (for RESET). Raman studies of the samples after the SET and RESET operations reveal that the SET state is a crystalline phase which is obtained by thermal annealing and the RESET state is the glassy state, similar to the as-quenched samples. It is interesting to note that the samples in the intermediate phase, especially compositions at x = 10, 12, and 14 withstand more set-reset cycles. This indicates compositions in the intermediate phase are better suited for phase change memory applications. (C) 2014 AIP Publishing LLC.

Effect of morphology on electrical treeing in low density polyethylene nanocomposites

Influence of polymer morphology on the inception and the growth of electrical trees in unfilled low density polyethylene (LDPE) as well as LDPE filled with 1, 3 and 5% by weight nanoalumina samples stressed with 50 Hz ac voltage has been studied. It is seen that there is a significant improvement in tree inception voltage with filler loading in LDPE filled with nanoparticles. Tree inception voltage increased with the filler loading up to 3% by weight nanoalumina loading and showed a reduction at 5% by weight loading. Change in tree growth patterns from branch to bush as well as a slower tree growth with increase in filler loading in LDPE alumina nanocomposites were observed. The degree of crystallinity and change in crystalline morphology induced by the presence of alumina nanoparticles in LDPE was studied using differential scanning calorimetry (DSC) and scanning electron microscopy (SEM). DSC results show a similar melting behaviour for both unfilled LDPE and LDPE nanocomposites. However, there is a reduction in the degree of crystallinity for LDPE filled with 5% by weight nanoalumina. An increase in lamellae packing with increase in filler loadings and a highly disordered spherulitic structure for LDPE filled with 5% by weight nanoalumina was observed from the SEM images. The slow propagation of tree growth as well as reduction in tree inception voltage with increase in filler loadings were attributed to the morphological changes observed in the LDPE nanocomposites.

Effect Of Mo Doping On The Electrical Properties Of VO2 Phase

Solution combustion synthesis technique was adopted to synthesize V2O5, and Mo doped phases, The as-synthesized V2O5, has been reduced by a novel reduction technique to form VO2 typephase. The monophasic nature of the samples as revealed by XRD data and systematic shift in peak position indicated solid solubility up to 2 at % of Mo in VO2 lattice. The crystallite size was found to similar to 40 nm. Particle size measurement carried out using Transmission electron microscope ( TEM) agreed with XRD experiments. Scanning electron microscope revealed the morphology of the particles to be plate like and bimodal. Variation in the metal- insulator transition temperature as a function of doping was investigated by 4-probe electrical resistivity measurement on sintered ceramics.

Non-equilibrium segmental dynamics driven by multiwall carbon nanotubes in PS/PVME blends

The present paper discusses the effect of multiwall carbon nanotubes (MWNTs) on the structural relaxation and the intermolecular cooperativity in dynamically asymmetric blends of PS/PVME (polystyrene/poly(vinyl methyl ether)). The temperature regime where chain connectivity effects dominate the thermodynamic concentration fluctuation (T/T-g > 0.75, T-g is the glass transition temperature of the blends) was studied using dielectric spectroscopy (DS). Interestingly, in the blends with MWNTs a bimodal distribution of relaxation was obtained in the loss modulus spectra. This plausibly is due to different environments experienced by the faster component (PVME) in the presence of MWNTs. The segmental dynamics of PVME was observed to be significantly slowed down in the presence of MWNTs and an Arrhenius-type behavior, weakly dependent on temperature, is observed at higher frequencies. This non-equilibrium dynamics of PVME is presumed to be originating from interphase regions near the surface of MWNTs. The length scale of the cooperative rearranging region (xi CRR) at T-g, assessed by calorimetric measurements, was observed to be higher in the case of blends with MWNTs. An enhanced molecular level miscibility driven by MWNTs in the blends corroborates with the larger xi CRR and comparatively more number of segments in CRR (in contrast to neat blends) around T-g. The configurational entropy and length scale of the cooperative volume was mapped as a function of temperature in the temperature regime, Tg < T < T-g + 60 K. The blends phase separated by spinodal decomposition which further led to an interconnected PVME network in PS. This further led to materials with very high electrical conductivity upon demixing.

Citrate-complexation synthesized Ce0.85Gd0.15O2-delta (GDC15) as solid electrolyte for intermediate temperature SOFC

A typical Ce0.85Gd0.15O2-delta (CDC15) composition of CeO2-Gd2O3 system is synthesized by modified sol - gel technique known as citrate-complexation. TG-DTA, XRD, FT-IR, Raman, FE-SEM/EDX and ac impedance analysis are carried out for structural and electrical characterization. XRD pattern confirmed the well crystalline cubic fluorite structure of CDC15 after calcining at 873 K. Raman spectral bands at 463, 550 and 600 cm(-1) are also in agreement with these structural features. FE-SEM image shows well-defined grains separated from grain boundary and good densification. Ac impedance studies reveal that GDC15 has oxide ionic conductivity similar to that reported for Ce0.9Gd0.1O2-delta (GDC10) and Ce0.8Gd0.2O2-delta (GDC20). Ionic and electronic transference numbers at 673 K are found to be 0.95 and 0.05, respectively. This indicates the possible application of GDC15 as a potential electrolyte for IT-SOFCs. (C) 2014 Elsevier B.V. All rights reserved.

Optical, photo-acoustic and electrical switching studies of amorphous GeS2 thin films

This paper reports optical, photo-acoustic and electrical switching investigations of GeS2 amorphous thin films of different thicknesses, deposited on glass substrates in vacuum. The Tauc parameter (B (1/2)) and Urbach energy (E (U)) have been determined from the transmittance spectra, to understand the changes in structural disorder; it is found that B (1/2) increases whereas E (U) decreases as the thickness of the films increases. Based on the results, it is suggested that bond re-arrangement, i.e. transformation from homopolar bonds to heteropolar bonds, takes place with increase in thickness. The thermal diffusivity values of GeS2 thin films also show the presence of a chemically ordered network in the GeS2 thin films. Further, it is found that these films exhibit memory-type electrical switching. The observed variation in the switching voltages has been understood on the basis of increase in chemical order.

Thermoelectric Properties of Two-Phase PbTe with Indium Inclusions

The thermoelectric figure of merit (zT) can be increased by introduction of additional interfaces in the bulk to reduce the thermal conductivity. In this work, PbTe with a dispersed indium (In) phase was synthesized by a matrix encapsulation technique for different In concentrations. x-Ray diffraction analysis showed single-phase PbTe with In secondary phase. Rietveld analysis did not show In substitution at either the Pb or Te site, and this was further confirmed by room-temperature Raman data. Low-magnification (similar to 1500x) scanning electron microscopy images showed micrometer-sized In dispersed throughout the PbTe matrix, while at high magnification (150,000x) an agglomeration of PbTe particles in the hot-pressed samples could be seen. The electrical resistivity (rho) and Seebeck coefficient (S) were measured from 300 K to 723 K. Negative Seebeck values showed all the samples to be n-type. A systematic increase in resistivity and higher Seebeck coefficient values with increasing In content indicated the role of PbTe-In interfaces in the scattering of electrons. This was further confirmed by the thermal conductivity (kappa), measured from 423 K to 723 K, where a greater reduction in the electronic as compared with the lattice contribution was found for In-added samples. It was found that, despite the high lattice mismatch at the PbTe-In interface, phonons were not scattered as effectively as electrons. The highest zT obtained was 0.78 at 723 K for the sample with the lowest In content.