51 resultados para post-larval


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Continuous advances in VLSI technology have made implementation of very complicated systems possible. Modern System-on -Chips (SoCs) have many processors, IP cores and other functional units. As a result, complete verification of whole systems before implementation is becoming infeasible; hence it is likely that these systems may have some errors after manufacturing. This increases the need to find design errors in chips after fabrication. The main challenge for post-silicon debug is the observability of the internal signals. Post-silicon debug is the problem of determining what's wrong when the fabricated chip of a new design behaves incorrectly. This problem now consumes over half of the overall verification effort on large designs, and the problem is growing worse.Traditional post-silicon debug methods concentrate on functional parts of systems and provide mechanisms to increase the observability of internal state of systems. Those methods may not be sufficient as modern SoCs have lots of blocks (processors, IP cores, etc.) which are communicating with one another and communication is another source of design errors. This tutorial will be provide an insight into various observability enhancement techniques, on chip instrumentation techniques and use of high level models to support the debug process targeting both inside blocks and communication among them. It will also cover the use of formal methods to help debug process.

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Carbon monoxide, a major pollutant from the cupola, is poisonous and flammable. It can vary from 12 to 25% in cupola emissions. Carbon monoxide content in cupola emissions can be reduced by the post-combustion air input at the appropriate level into the stack. Scientific support to this has been provided by simulation of the combustion process in the cupola. Location and the extent of input of air for post combustion into the stack have been determined.

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The loss rate of linear momentum from a binary system composed of compact objects (radially falling towards each other under mutual gravitational influence) has been investigated using the multipolar post-Minkowskian approach. The 2.5PN accurate analytical formula for the linear momentum flux is provided, in terms of the separation of the two objects, in harmonic coordinates, both for a finite and an infinite initial separation. The 2.5PN formulas for the linear momentum flux are finally used to estimate the recoil velocity accumulated during a premerger phase of the binary evolution.

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This paper presents the first stable isotope (delta O-18 and delta C-13) data of a similar to 400 years (1590-2006 AD) long annual to decadal-resolution speleothem record collected from the Indian Lesser Himalaya. The data show a variation from -2.7 to -5.9 parts per thousand in delta O-18 and -5.3 to -8.8 parts per thousand in delta C-13. The isotopic analyses indicate that the climate during this period can be divided into two stages: a wet phase during the Little Ice Age (LIA) (1590-1850 AD) and comparatively dry phase during the post-LIA after 1850 AD. However, the record also documents the minor dry events during the LIA and a wet episode after the LIA. Within the age uncertainty, the dry spells during the LIA are linked with the historical drought events in the Indian subcontinent and similar latitudes. The isotopic record is consistent with a number of previous studies in the areas influenced by the Westerlies but appears to be conflicting to the regions, dominated by the Indian Summer Monsoon (ISM). This may be due to the possible changes in the strength of Westerlies in the study area and added by negative anomaly of North Atlantic Oscillation (NAO) during the LIA. (C) 2012 Elsevier Ltd and INQUA. All rights reserved.

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We address the problem of speech enhancement in real-world noisy scenarios. We propose to solve the problem in two stages, the first comprising a generalized spectral subtraction technique, followed by a sequence of perceptually-motivated post-processing algorithms. The role of the post-processing algorithms is to compensate for the effects of noise as well as to suppress any artifacts created by the first-stage processing. The key post-processing mechanisms are aimed at suppressing musical noise and to enhance the formant structure of voiced speech as well as to denoise the linear-prediction residual. The parameter values in the techniques are fixed optimally by experimentally evaluating the enhancement performance as a function of the parameters. We used the Carnegie-Mellon university Arctic database for our experiments. We considered three real-world noise types: fan noise, car noise, and motorbike noise. The enhancement performance was evaluated by conducting listening experiments on 12 subjects. The listeners reported a clear improvement (MOS improvement of 0.5 on an average) over the noisy signal in the perceived quality (increase in the mean-opinion score (MOS)) for positive signal-to-noise-ratios (SNRs). For negative SNRs, however, the improvement was found to be marginal.

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In this paper we propose a postprocessing technique for a spectrogram diffusion based harmonic/percussion decom- position algorithm. The proposed technique removes har- monic instrument leakages in the percussion enhanced out- puts of the baseline algorithm. The technique uses median filtering and an adaptive detection of percussive segments in subbands followed by piecewise signal reconstruction using envelope properties to ensure that percussion is enhanced while harmonic leakages are suppressed. A new binary mask is created for the percussion signal which upon applying on the original signal improves harmonic versus percussion separation. We compare our algorithm with two recent techniques and show that on a database of polyphonic Indian music, the postprocessing algorithm improves the harmonic versus percussion decomposition significantly.

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It is well known that extremely long low-density parity-check (LDPC) codes perform exceptionally well for error correction applications, short-length codes are preferable in practical applications. However, short-length LDPC codes suffer from performance degradation owing to graph-based impairments such as short cycles, trapping sets and stopping sets and so on in the bipartite graph of the LDPC matrix. In particular, performance degradation at moderate to high E-b/N-0 is caused by the oscillations in bit node a posteriori probabilities induced by short cycles and trapping sets in bipartite graphs. In this study, a computationally efficient algorithm is proposed to improve the performance of short-length LDPC codes at moderate to high E-b/N-0. This algorithm makes use of the information generated by the belief propagation (BP) algorithm in previous iterations before a decoding failure occurs. Using this information, a reliability-based estimation is performed on each bit node to supplement the BP algorithm. The proposed algorithm gives an appreciable coding gain as compared with BP decoding for LDPC codes of a code rate equal to or less than 1/2 rate coding. The coding gains are modest to significant in the case of optimised (for bipartite graph conditioning) regular LDPC codes, whereas the coding gains are huge in the case of unoptimised codes. Hence, this algorithm is useful for relaxing some stringent constraints on the graphical structure of the LDPC code and for developing hardware-friendly designs.

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Titanium dioxide (TiO2) thin films are deposited on unheated p-Si (100) and quartz substrates by employing DC reactive magnetron sputtering technique. The effect of post-deposition annealing in air at temperatures in the range 673-973 K on the structural, electrical, and dielectric properties of the films was investigated. The chemical composition of the TiO2 films was analyzed with X-ray photoelectron spectroscopy. The surface morphology of the films was studied by atomic force microscope. The optical band gap of the as-deposited film was 3.50 eV, and it increased to 3.55 eV with the increase in annealing temperature to 773 K. The films annealed at higher temperature of 973 K showed the optical band gap of 3.43 eV. Thin film capacitors were fabricated with the MOS configuration of Al/TiO2/p-Si. The leakage current density of the as-deposited films was 1.2 x 10(-6) A/cm(2), and it decreased to 5.9 x 10(-9) A/cm(2) with the increase in annealing temperature to 973 K. These films showed high dielectric constant value of 36. (C) 2013 Elsevier Ltd. All rights reserved.

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The present experimental study investigates the influence of post-deposition annealing on the transverse piezoelectric coefficient (d(31)) value of ZnO thin films deposited on a flexible metal alloy substrate, and its relationship with the vibration sensing performance. Highly c-axis oriented and crystalline ZnO thin films were deposited on flexible Phynox alloy substrate via radio frequency (RF) reactive magnetron sputtering. ZnO thin film samples were annealed at different temperatures ranging from 100 degrees C to 500 degrees C, resulting in the temperature of 300 degrees C determined as the optimum annealing temperature. The crystallinity, morphology, microstructure, and rms surface roughness of annealed ZnO thin films were systematically investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM), respectively. The piezoelectric d(31) coefficient value was measured by 4-point bending method. ZnO thin film annealed at 300 degrees C was highly c-axis oriented, crystalline, possesses fine surface morphology with uniformity in the grain size. This film showed higher d(31) coefficient value of 7.2 pm V-1. A suitable in-house designed and developed experimental set-up, for evaluating the vibration sensing performance of annealed ZnO thin films is discussed. As expected the ZnO thin film annealed at 300 degrees C showed relatively better result for vibration sensing studies. It generates comparatively higher peak output voltage of 147 mV, due to improved structural and morphological properties, and higher piezoelectric d(31) coefficient value. (C) 2014 Elsevier B. V. All rights reserved.

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Post-absorptive glucose lowering (PALG) is observed in individuals with glucose intolerance and in healthy individuals. We report a prevalence of about 23% among healthy Asian Indians. Individuals with PALG are characterized by leaner phenotype, low body fat percentage, increased insulin sensitivity and higher fasting glucose levels. (C) 2014 Elsevier Ireland Ltd. All rights reserved.

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In the present investigation, Al2O3 thin films were deposited onto Si < 100 > substrates by DC reactive magnetron sputtering. The films were annealed in vacuum for one hour at 623, 823 and 1023 K. The composition of the films was quantitatively estimated using X-ray photoelectron spectroscopy (XPS) and the O/Al ratio was found be in the range 1.19 to 1.43. Grazing incidence X-ray diffraction (GIXRD) results revealed that the annealed films are amorphous in nature. Cross sectional transmission electron microscopy (X-TEM) analysis was carried out to study the microstructure and nature of the Al2O3-Si interface as a function of post-deposition annealing. TEM results revealed the presence of nanocrystalline gamma-Al2O3 in the annealed films and an amorphous interface layer was observed at the Al2O3 Si interface. The thickness of the amorphous interface layer was determined from the TEM analysis and the results are discussed.

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We have investigated the effect of post- deposition annealing on the composition and electrical properties of alumina (Al2O3) thin films. Al2O3 were deposited on n-type Si < 100 >. substrates by dc reactive magnetron sputtering. The films were subjected to post- deposition annealing at 623, 823 and 1023 K in vacuum. X-ray photoelectron spectroscopy results revealed that the composition improved with post- deposition annealing, and the film annealed at 1023 K became stoichiometric with an O/Al atomic ratio of 1.49. Al/Al2O3/Si metal-oxide-semiconductor (MOS) structures were then fabricated, and a correlation between the dielectric constant epsilon(r) and interface charge density Q(i) with annealing conditions were studied. The dielectric constant of the Al2O3 thin films increased to 9.8 with post- deposition annealing matching the bulk value, whereas the oxide charge density decreased to 3.11 x 10(11) cm(-2.) Studies on current-voltage IV characteristics indicated ohmic and Schottky type of conduction at lower electric fields (<0.16 MV cm(-1)) and space charge limited conduction at higher electric fields.