Coupling geomorphology parameters with lithology for micro-level groundwater resource assessment: a case study from semi-arid hard rock terrain in Tamil Nadu, India

The standard procedure of groundwater resource estimation in India till date is based on the specific yield parameters of each rock type (lithology) derived through pumping test analysis. Using the change in groundwater level, specific yield, and area of influence, groundwater storage change could be estimated. However, terrain conditions in the form of geomorphological variations have an important bearing on the net groundwater recharge. In this study, an attempt was made to use both lithology and geomorphology as input variables to estimate the recharge from different sources in each lithology unit influenced by the geomorphic conditions (lith-geom), season wise separately. The study provided a methodological approach for an evaluation of groundwater in a semi-arid hard rock terrain in Tirunelveli, Tamil Nadu, India. While characterizing the gneissic rock, it was found that the geomorphologic variations in the gneissic rock due to weathering and deposition behaved differently with respect to aquifer recharge. The three different geomorphic units identified in gneissic rock (pediplain shallow weathered (PPS), pediplain moderate weathered (PPM), and buried pediplain moderate (BPM)) showed a significant variation in recharge conditions among themselves. It was found from the study that Peninsular gneiss gives a net recharge value of 0.13 m/year/unit area when considered as a single unit w.r.t. lithology, whereas the same area considered with lith-geom classes gives recharge values between 0.1 and 0.41 m/year presenting a different assessment. It is also found from this study that the stage of development (SOD) for each lith-geom unit in Peninsular gneiss varies from 168 to 230 %, whereas the SOD is 223 % for the lithology as a single unit.

Probing complex heterostructures using hard X-ray photoelectron spectroscopy (HAXPES)

X-ray Photoelectron Spectroscopy (XPS) plays a central role in the investigation of electronic properties as well as compositional analysis of almost every conceivable material. However, a very short inelastic mean free path (IMFP) and the limited photon flux in standard laboratory conditions render this technique very much surface sensitive. Thus, the electronic structure buried below several layers of a heterogeneous sample is not accessible with usual photoemission techniques. An obvious way to overcome this limitation is to use a considerably higher energy photon source, as this increases the IMFP of the photo-ejected electron, thereby making the technique more depth and bulk sensitive. Due to this obvious advantage, Hard X-ray Photo Electron Spectroscopy (HAXPES) is rapidly becoming an extremely powerful tool for chemical, elemental, compositional and electronic characterization of bulk systems, more so with reference to systems characterized by the presence of buried interfaces and other types of chemical heterogeneity. The relevance of such an investigative tool becomes evident when we specifically note the ever-increasing importance of heterostructures and interfaces in the context of a wide range of device applications, spanning electronic, magnetic, optical and energy applications. The interest in this nondestructive, element specific HAXPES technique has grown rapidly in the past few years; we discuss critically its extensive use in the study of depth resolved electronic properties of nanocrystals, multilayer superlattices and buried interfaces, revealing their internal structures. We specifically present a comparative discussion, with examples, on two most commonly used methods to determine internal structures of heterostructured systems using XPS. (C) 2015 Elsevier B.V. All rights reserved.