34 resultados para Top squark


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We explore beyond-standard-model (BSM) physics signatures in the l + jets channel of the t (t) over bar pair production process at the Tevatron and the LHC. We study the effects of BSM physics scenarios on the top-quark polarization and on the kinematics of the decay leptons. To this end, we construct asymmetries using the lepton energy and angular distributions. Further, we find their correlations with the top polarization, net charge asymmetry and top forward-backward asymmetry. We show that when used together, these observables can help discriminate effectively between SM and different BSM scenarios, which can lead to varying degrees of top polarization at the Tevatron as well as the LHC. We use two types of colored mediator models to demonstrate the effectiveness of proposed observables, an s-channel axigluon and a u-channel diquark.

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Kinematical distributions of decay products of the top quark carry information on the polarisation of the top as well as on any possible new physics in the decay of the top quark. We construct observables in the form of asymmetries in the kinematical distributions to probe their effects. Charged-lepton angular distributions in the decay are insensitive to anomalous couplings to leading order. Hence these can be a robust probe of top polarisation. However, these are difficult to measure in the case of highly boosted top quarks as compared to energy distributions of decay products. These are then sensitive, in general, to both top polarisation and top anomalous couplings. We compare various asymmetries for their sensitivities to the longitudinal polarisation of the top quark as well as to possible new physics in the Wtb vertex, paying special attention to the case of highly boosted top quarks. We perform a chi(2) analysis to determine the regions in the plane of longitudinal polarisation of the top quark and the couplings of the Wtb vertex constrained by different combinations of the asymmetries. Moreover, we find that the use of observables sensitive to the longitudinal top polarisation can add to the sensitivity to which the Wtb vertex can be probed.

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Kinematical distributions of decay products of the top quark carry information on the polarisation of the top as well as on any possible new physics in the decay of the top quark. We construct observables in the form of asymmetries in the kinematical distributions to probe their effects. Charged-lepton angular distributions in the decay are insensitive to anomalous couplings to leading order. Hence these can be a robust probe of top polarisation. However, these are difficult to measure in the case of highly boosted top quarks as compared to energy distributions of decay products. These are then sensitive, in general, to both top polarisation and top anomalous couplings. We compare various asymmetries for their sensitivities to the longitudinal polarisation of the top quark as well as to possible new physics in the Wtb vertex, paying special attention to the case of highly boosted top quarks. We perform a chi(2) analysis to determine the regions in the plane of longitudinal polarisation of the top quark and the couplings of the Wtb vertex constrained by different combinations of the asymmetries. Moreover, we find that the use of observables sensitive to the longitudinal top polarisation can add to the sensitivity to which the Wtb vertex can be probed.

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Using in situ Raman scattering from phosphorene channel in an electrochemically top-gated field effect transistor, we show that phonons with A(g) symmetry depend much more strongly on concentration of electrons than that of holes, wheras phonons with B-g symmetry are insensitive to doping. With first-principles theoretical analysis, we show that the observed electon-hole asymmetry arises from the radically different constitution of its conduction and valence bands involving pi and sigma bonding states respectively, whose symmetry permits coupling with only the phonons that preserve the lattice symmetry. Thus, Raman spectroscopy is a non-invasive tool for measuring electron concentration in phosphorene-based nanoelectronic devices.