243 resultados para Tight Junction


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A finite element analysis of laminated shells reinforced with laminated stiffeners is described in this paper. A rectangular laminated anisotropic shallow thin shell finite element of 48 d.o.f. is used in conjunction with a laminated anisotropic curved beam and shell stiffening finite element having 16 d.o.f. Compatibility between the shell and the stiffener is maintained all along their junction line. Some problems of symmetrically stiff ened isotropic plates and shells have been solved to evaluate the performance of the present method. Behaviour of an eccentrically stiffened laminated cantilever cylindrical shell has been predicted to show the ability of the present program. General shells amenable to rectangular meshes can also be solved in a similar manner.

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Surface composition and depth profile studies of hemiplated thin film CdS:CuzS solar cells have been carried out using x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) techniques. These studies indicate that the junction is fairly diffused in the as-prepared cell. However, heat treatment of the cell at 210°C in air relatively sharpens the junction and improves the cell performance. Using the Cu(2p3p)/S(2p) ratio as well as the Cu(LVV)/(LMM) Auger intensity ratio, it can be inferred that the nominal valency of copper in the layers above the junction is Cut and it is essentially in the CUSS form. Copper signals are observed from layers deep down in the cell. These seem to appear mostly from the grain boundary region. From the observed concentration of Cd, Cu and S in these deeper layers and the Cu(LVV)/(LMM) ratio it appears that the signals from copper essentially originate partly from copper in CuS and partly from Cu2t trapped in the lattice. It is significant to note that the nominal valence state of copper changes rather abruptly from Cut to Cuz+ across the junction.

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Bond graph is an apt modelling tool for any system working across multiple energy domains. Power electronics system modelling is usually the study of the interplay of energy in the domains of electrical, mechanical, magnetic and thermal. The usefulness of bond graph modelling in power electronic field has been realised by researchers. Consequently in the last couple of decades, there has been a steadily increasing effort in developing simulation tools for bond graph modelling that are specially suited for power electronic study. For modelling rotating magnetic fields in electromagnetic machine models, a support for vector variables is essential. Unfortunately, all bond graph simulation tools presently provide support only for scalar variables. We propose an approach to provide complex variable and vector support to bond graph such that it will enable modelling of polyphase electromagnetic and spatial vector systems. We also introduced a rotary gyrator element and use it along with the switched junction for developing the complex/vector variable's toolbox. This approach is implemented by developing a complex S-function tool box in Simulink inside a MATLAB environment This choice has been made so as to synthesise the speed of S-function, the user friendliness of Simulink and the popularity of MATLAB.

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A k-cube (or ``a unit cube in k dimensions'') is defined as the Cartesian product R-1 x . . . x R-k where R-i (for 1 <= i <= k) is an interval of the form [a(i), a(i) + 1] on the real line. The k-cube representation of a graph G is a mapping of the vertices of G to k-cubes such that the k-cubes corresponding to two vertices in G have a non-empty intersection if and only if the vertices are adjacent. The cubicity of a graph G, denoted as cub(G), is defined as the minimum dimension k such that G has a k-cube representation. An interval graph is a graph that can be represented as the intersection of intervals on the real line - i. e., the vertices of an interval graph can be mapped to intervals on the real line such that two vertices are adjacent if and only if their corresponding intervals overlap. We show that for any interval graph G with maximum degree Delta, cub(G) <= inverted right perpendicular log(2) Delta inverted left perpendicular + 4. This upper bound is shown to be tight up to an additive constant of 4 by demonstrating interval graphs for which cubicity is equal to inverted right perpendicular log(2) Delta inverted left perpendicular.

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We study transport across a point contact separating two line junctions in a nu = 5/2 quantum Hall system. We analyze the effect of inter-edge Coulomb interactions between the chiral bosonic edge modes of the half-filled Landau level (assuming a Pfaffian wave function for the half-filled state) and of the two fully filled Landau levels. In the presence of inter-edge Coulomb interactions between all the six edges participating in the line junction, we show that the stable fixed point corresponds to a point contact that is neither fully opaque nor fully transparent. Remarkably, this fixed point represents a situation where the half-filled level is fully transmitting, while the two filled levels are completely backscattered; hence the fixed point Hall conductance is given by G(H) = 1/2e(2)/h. We predict the non-universal temperature power laws by which the system approaches the stable fixed point from the two unstable fixed points corresponding to the fully connected case (G(H) = 5/2e(2)/h) and the fully disconnected case (G(H) = 0).

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A finite element analysis of laminated shells of revolution reinforced with laminated stifieners is described here-in. A doubly curved quadrilateral laminated anisotropic shell of revolution finite element of 48 d.o.f. is used in conjunction with two stiffener elements of 16 d.o.f. namely: (i) A laminated anisotropic parallel circle stiffener element (PCSE); (ii) A laminated anisotropic meridional stiffener element (MSE). These stifiener elements are formulated under line member assumptions as degenerate cases of the quadrilateral shell element to achieve compatibility all along the shell-stifiener junction lines. The solutions to the problem of a stiffened cantilever cylindrical shell are used to check the correctness of the present program while it's capability is shown through the prediction of the behavior of an eccentrically stiffened laminated hyperboloidal shell.

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The Palghat–Cauvery suture zone in southern India separates Archaean crustal blocks to the north and the Proterozoic Madurai block to the south. Here we present the first detailed study of a partially retrogressed eclogite (from within the Sittampundi anorthositic complex in the suture zone) that occurs as a 20-cm wide layer in a garnet gabbro layer in anorthosite. The eclogite largely consists of an assemblage of coexisting porphyroblasts of almandine–pyrope garnet and augitic clinopyroxene. However, a few garnets contain inclusions of omphacite. Rims and symplectites composed of Na–Ca amphibole and plagioclase form a retrograde assemblage. Petrographic analysis and calculated phase equilibria indicate that garnet–omphacite–rutile–melt was the peak metamorphic assemblage and that it formed at ca. 20 kbar and above 1000 °C. The eclogite was exhumed on a very tight hairpin-type, anticlockwise P–T path, which we relate to subduction and exhumation in the Palghat–Cauvery suture zone. The REE composition of the minerals suggests a basaltic oceanic crustal protolith metamorphosed in a subduction regime. Geological–structural relations combined with geophysical data from the Palghat–Cauvery suture zone suggest that the eclogite facies metamorphism was related to formation of the suture zone. Closure of the Mozambique Ocean led to development of the suture zone and to its western extension in the Betsimisaraka suture of Madagascar.

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The electronic structure of group II-VI semiconductors in the stable wurtzite form is analyzed using state-of-the-art ab initio approaches to extract a simple and chemically transparent tight-binding model. This model can be used to understand the variation in the bandgap with size, for nanoclusters of these compounds. Results complement similar information already available for same systems in the zinc blende structure. A comparison with all available experimental data on quantum size effects in group II-VI semiconductor nanoclusters establishes a remarkable agreement between theory and experiment in both structure types, thereby verifying the predictive ability of our approach. The significant dependence of the quantum size effect on the structure type suggests that the experimental bandgap change at a given size compared to the bulk bandgap, may be used to indicate the structural form of the nanoclusters, particularly in the small size limit, where broadening of diffraction features often make it difficult to unambiguously determine the structure.

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RuvA, along with RuvB, is involved in branch migration of heteroduplex DNA in homologous recombination. The structures of three new crystal forms of RuvA from Mycobacterium tuberculosis (MtRuvA) have been determined. The RuvB-binding domain is cleaved off in one of them. Detailed models of the complexes of octameric RuvA from different species with the Holliday junction have also been constructed. A thorough examination of the structures presented here and those reported earlier brings to light the hitherto unappreciated role of the RuvB-binding domain in determining inter-domain orientation and oligomerization. These structures also permit an exploration of the interspecies variability of structural features such as oligomerization and the conformation of the loop that carries the acidic pin, in terms of amino acid substitutions. These models emphasize the additional role of the RuvB-binding domain in Holliday junction binding. This role along with its role in oligomerization could have important biological implications.

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A finite element analysis of laminated shells reinforced with laminated stiffeners is described in this paper. A rectangular laminated anisotropic shallow thin shell finite element of 48 d.o.f. is used in conjunction with a laminated anisotropic curved beam and shell stiffening finite element having 16 d.o.f. Compatibility between the shell and the stiffener is maintained all along their junction line. Some problems of symmetrically stiffened isotropic plates and shells have been solved to evaluate the performance of the present method. Behaviour of an eccentrically stiffened laminated cantilever cylindrical shell has been predicted to show the ability of the present program. General shells amenable to rectangular meshes can also be solved in a similar manner.

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This work explores the electrical properties of p-SnS/n-ITO heterojunction at different temperatures. The p-type SnS film was deposited on n-type ITO substrate using the thermal evaporation technique and its junction properties were studied using two probe method. The as-grown p-n junction exhibited weak rectifying behaviour with a low Saturation current of the order of similar to 10(-6) A. While increasing temperature, the saturation current of the junction is increased and however, its series resistance decreased. At all temperatures the junction exhibited three types of transport mechanisms depending on applied bias-voltage. At lower voltages the junction showed nearly ideal diode characteristics. The junction behaviour with respect to bias-voltage and temperature is discussed with the help of existing theories and energy band diagram.

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A cut (A, B) (where B = V - A) in a graph G = (V, E) is called internal if and only if there exists a vertex x in A that is not adjacent to any vertex in B and there exists a vertex y is an element of B such that it is not adjacent to any vertex in A. In this paper, we present a theorem regarding the arrangement of cliques in a chordal graph with respect to its internal cuts. Our main result is that given any internal cut (A, B) in a chordal graph G, there exists a clique with kappa(G) + vertices (where kappa(G) is the vertex connectivity of G) such that it is (approximately) bisected by the cut (A, B). In fact we give a stronger result: For any internal cut (A, B) of a chordal graph, and for each i, 0 <= i <= kappa(G) + 1 such that vertical bar K-i vertical bar = kappa(G) + 1, vertical bar A boolean AND K-i vertical bar = i and vertical bar B boolean AND K-i vertical bar = kappa(G) + 1 - i. An immediate corollary of the above result is that the number of edges in any internal cut (of a chordal graph) should be Omega(k(2)), where kappa(G) = k. Prompted by this observation, we investigate the size of internal cuts in terms of the vertex connectivity of the chordal graphs. As a corollary, we show that in chordal graphs, if the edge connectivity is strictly less than the minimum degree, then the size of the mincut is at least kappa(G)(kappa(G)+1)/2 where kappa(G) denotes the vertex connectivity. In contrast, in a general graph the size of the mincut can be equal to kappa(G). This result is tight.

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In this paper, for the first time, the effects of energy quantization on single electron transistor (SET) inverter performance are analyzed through analytical modeling and Monte Carlo simulations. It is shown that energy quantization mainly changes the Coulomb blockade region and drain current of SET devices and thus affects the noise margin, power dissipation, and the propagation delay of SET inverter. A new analytical model for the noise margin of SET inverter is proposed which includes the energy quantization effects. Using the noise margin as a metric, the robustness of SET inverter is studied against the effects of energy quantization. A compact expression is developed for a novel parameter quantization threshold which is introduced for the first time in this paper. Quantization threshold explicitly defines the maximum energy quantization that an SET inverter logic circuit can withstand before its noise margin falls below a specified tolerance level. It is found that SET inverter designed with CT:CG=1/3 (where CT and CG are tunnel junction and gate capacitances, respectively) offers maximum robustness against energy quantization.

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In this paper, we report the synthesis and self assembly of various sizes of ZnO nanocrystals. While the crystal structure and the quantum confinement of nanocrystals were mainly characterized using XRD and UV absorption spectra, the self assembly and long range ordering were studied using scanning tunneling microscopy after spin casting the nanocrystal film on the highly oriented pyrolytic graphite surface. We observe self assembly of these nanocrystals over large areas making them ideal candidates for various potential applications. Further, the electronic structure of the individual dots is obtained from the current-voltage characteristics of the dots using scanning tunneling spectroscopy and compared with the density of states obtained from the tight binding calculations. We observe an excellent agreement with the experimentally obtained local density of states and the theoretically calculated density of states.

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A theorem termed the Geometrical Continuity Theorem is enunciated and proven. This theorem throws light on the aspects of the continuity of the proportional portion with the base weir portion. These two portions constitute the profile of a proportional weir. A weir of this type with circular bottom is designed. The theorem is used to establish the continuity at the junction of the proportional and the base weir portions of this weir. The coordinates of the weir profile are obtained by numerical methods and are furnished in tabular form for ready use by designers. The discharge passing through the weir is a linear function of the head. The verification of the assumed linear discharge-head relation is furnished for one of the three weirs with which experiments were conducted. The coefficient of discharge for this typical weir is found to be a constant with a value of 0.59.