Magnetic properties of pure, Sr- and Ca-Doped La2NiO4+δ ceramics: Onset of high-Tc superconductivity

We present the results for the temperature and field dependence of the magnetic for ceramic materials of the composition La2−xMxNiO4, with M=Sr or Ca and 0≤x≤0.4. The onset of a strong diamagnetism has been observed at temperatures between 8 and 70 K, depending on sample composition, annealing conditions. and thermal cycling procedures. The results are similar to those obtained earlier for monocrystalline samples and are likewise interpreted as due to the onset of superconductivity in a minority phase. A comparison with the results for superconducting La1.8Sr0.2Cu0.9Ni0.1O4 ceramics is also made; this illustrates some unique features of the nickelate systems, such as the high values of the critical fields Hc1 and Hc2. The differences between monocrystalline and ceramic systems are also discussed.

A Novel Method for the Uniform Incorporation of Grain-Boundary Layer Modifiers in Positive Temperature Coefficient of Resistivity Barium Titanate

The presently developed two-stage process involves diping the prefired porous disks of n-BaTiO3 in nonaqueous solutions containing Al-buty rate, Ti-isopropoxide, and tetraethyl silicate and subsequent sintering. This leads to uniform distribution of the grain-boundary layer (GBL) modifiers (Al2O3+ TiO2+ SiO2) and better control of the grain size as well as the positive temperature coefficient of resistivity characteristics. The technique is particularly suited for GBL modifiers in low concentrations (< 1%).

Field-dependent changeover from current-to voltage-limiting characteristics by non-linear n-type BaTiO3 ceramics

Non-linear resistors having current-limiting capabilities at lower field strengths, and voltage-limiting characteristics (varistors) at higher field strengths, were prepared from sintered polycrystalline ceramics of (Ba0.6Sr0.4)(Ti0.97Zr0.03)O3+0.3 at % La, and reannealed after painting with low-melting mixtures of Bi2O3 + PbO +B2O3. These types of non-linear characteristics were found to depend upon the non-uniform diffusion of lead and the consequent distribution of Curie points (T c) in these perovskites, resulting in diffuse phase transitions. Tunnelling of electrons across the asymmetric barrier at tetragonak-cubic interfaces changes to tunnelling across the symmetric barrier as the cubic phase is fully stabilized through Joule heating at high field strengths. Therefore the current-limiting characteristics switch over to voltage-limiting behaviour because tunnelling to acceptor-type mid-bandgap states gives way to band-to-band tunnelling.

Hydrazine carboxylate precursors to fine particle titania, zirconia and zirconium titanate

Titanyl hydrazine carboxylate dihydrate, TiO(N2H3COO)2.2H2O, zirconyl hydrazine carboxylate dihydrate, ZrO(N2H3COO)2.2H2O and their solid solution, ZrTiO2(N2H3COO)4.4H2O have been prepared for the first time and investigated as precursors to fine particle TiO2, ZrO2 and ZrTiO4 respectively. Titania(anatase) formed has a very high surface area of 110 m2/g and zirconium titanate showed very low dielectric loss (4 x 10(-4)).

Crystal structure and electrical properties of CaNaBi2Nb3O12 ceramics

Monophasic CaNaBi2Nb3O12 powders were synthesized via the conventional solid-state reaction route. Rietveld refinement of the X-ray powder diffraction (XRD) data and selected area electron diffraction (SAED) studies confirmed the phase to be a three-layer Aurivillius oxide associated with an orthorhombic B2cb space group. The dielectric properties of the ceramics have been studied in the 300-800 K temperature range at various frequencies (1 kHz to 1 MHz). A dielectric anomaly was observed at 676 K for all the frequencies corresponding to the ferroelectric to paraelectric phase transition as it was also corroborated by the high temperature X-ray diffraction studies. The incidence of the polarization-electric field (P vs. E) hysteresis loop demonstrated CaNaBi2Nb3O12 to be ferroelectric.

Varistors based on n-BaTiO3 ceramics

Stable and highly reproducible voltage-limiting characteristics have been observed at room temperature for polycrystalline ceramics prepared from donor-doped BaTiO3 solid solutions containing isovalent lattice substitute ions that lower the Curie point Tc. When the ambient temperature Ta is decreased such that Ta < Tc, the same ceramics show current-limiting behaviour. The leakage current, the breakdown voltage and the non-linear coefficient (α = 30−50) could be varied with grain-boundary layer (GBL) modifiers and postsintering annealing. The magnitude of the abnormally high dielectric constant (epsilon (Porson)r greater than, approximately 105) indicates the prevalence of GBL capacitance in these ceramics. Analyses of the current-voltage relations show that GBL conduction at Ta < Tc corresponds to tunnelling across asymmetric barriers formed under steady state Joule heating. At Ta > Tc, trap-related conduction gives way to tunnelling across symmetric barriers as the field strength increases.

Influence of Bi 3+ ions in enhancing the magnitude of positive temperature coefficients of resistance in n-BaTiO3 ceramics

Bi3+ ions substituting at Ba-sites in a limited concentration range with another donor dopant occupying the Ti-sites in polycrystalline BaTiO3 enhanced the positive temperature coefficient of resistance (PTCR) by over seven orders of magnitude. These ceramics did not require normal post sinter annealing or a change to an oxygen atmosphere during annealing. These ceramics had low porosities coupled with better stabilities to large applied electric fields and chemically reducing atmospheres. Bi3+ ions limited the grain growth to less than 8 mum in size, they enhanced the concentration of acceptor-type trap centres at the grain-boundary-layer regions and maintained complete tetragonality at low grain sizes in BaTiO3 ceramics.

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

Study of electrical properties of pulsed excimer laser deposited strontium titanate films

Polycrystalline SrTiO3 films were prepared by pulsed excimer laser ablation on Si and Pt coated Si substrates. Several growth parameters were varied including ablation fluence, pressure, and substrate temperature. The structural studies indicated the presence of [100] and [110] oriented growth after annealing by rapid thermal annealing at 600-degrees-C for 60 s. Deposition at either lower pressures or at higher energy densities encouraged film growth with slightly preferred orientation. The scanning electron microscopy studies showed the absence of any significant particulates on the film surface. Dielectric studies indicated a dielectric constant of 225, a capacitance density of 3.2 fF/mum2, and a charge density of 40 fC/mum for films of 1000 nm thick. The dc conductivity studies on these films suggested a bulk limited space charge conduction in the high field regime, while the low electric fields induced an ohmic conduction. Brief time dependent dielectric breakdown studies on these films, under a field of 250 kV/cm for 2 h, did not exhibit any breakdown, indicating good dielectric strength.

Phase stability and dielectric properties of ceramics in the Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-PbTio3 relaxor ferroelectric system

The perovskite structure in Pb(Zn1/3Nb2/3)O3 can be stabilized by the addition of Pb(Ni1/3Nb2/3)O3 and PbTiO3.Pb(Ni1/3Nb2/3)O3 assists in lowering the sintering temperature and shifting the Curie temperature of ceramics while PbTiO3 helps to optimize the dielectric properties. The phase stability and dielectric properties of several compositions in the Pb(Zn1/3Nb2/3)O3-Pb(Ni1/3Nb2/3)O3-PbTiO3 ternary relaxor ferroelectric system were investigated for possible capacitor applications. The effect of calcining and sintering temperature on the stability of perovskite phase in PZN rich compositions was studied extensively as a function of composition. The boundary line separating perovskite and mixed phases was determined for compositions near PZN. Several compositions can be sintered below 1050°C. The dielectric properties of compositions near the mixed phase boundary showed strong dependence on the percentage of pyrochlore phase. Compositions with a dielectric constant of 12.500 at room temperature have been identified which meet Z5T and Y5U specifications for dielectric constant and tan δ.

Pyroelectric and Electrostrictive Properties of (1 –x–y) PZN ·xBT ·yPT Ceramic Solid Solutions

The pyroelectric and electrostrictive properties of lead zinc niobate-lead titanate-barium titanate (PZN-BT-PT) ceramic solid solution were investigated. These properties of the (1 - x)PZN.xBT series were qualitatively explained with a composition fluctuation model. The pyroelectric depolarization temperatures of (1 - x - y)PZN.xBT.yPT ceramics were utilized to select compositions for room-temperature electrostrictive applications. Among them, 0.85PZN.0.10BT.0.05PT ceramic with Q11 = 0.018 m4/C2, Q12 = -0.0085 m4/C2, S2 at 25 kV/cm = -6.1 x 10(-4), T(max) = 75-degrees-C at 1 kHz, and T(t) = 27-degrees-C shows optimum properties for micropositioner applications.

Structural and dielectric properties of Bi2NbxV1-xO5.5 ceramics

Bi2NbxV1-xO5.5 ceramics with x ranging from 0.01 to 0.5 have been prepared. The crystal system transforms from an orthorhombic to tetragonal at x greater than or equal to 0.1 and it persists until x = 0.5. Scanning electron microscopic (SEM) investigations carried out on thermally etched Bi2NbxV1-xO5.5 ceramics confirm that the grain size decreases markedly (18 mu m to 4 mu m) with increasing x. The shift in the Curie temperature (725 K) toward lower temperatures, with increasing x, is established by Differential Scanning Calorimetry (DSC). The dielectric constants as well as the loss tangent (tan delta) decrease with increasing x at room temperature.

Relationship between nonlinear resistivity and the varistor forming mechanism in ZnO ceramics

The use of a number of perovskite phases M� M�O3-x, as the only forming additive in ZnO ceramics, produces a high nonlinearity index, ?(up to 45), where M� is a multivalent transition?metal ion and M� is an alkaline earth or a rare?earth ion. From this study, the formation parameters crucial to high nonlinearity, such as nonstoichiometry in the as?received ZnO powder, low x values of the additives and fast cooling rate after the sintering, are explainable on the basis of a depletion layer formation at the presintering stage. This is because of the surface states arising out of the chemisorbed oxygen. The depletion layer is retained during sintering as a result of the higher valence state of M� ions, preferentially present at the grain?boundary regions. The fast cooling freezes in the high?temperature concentration of donor?type defects, thereby decreasing the depletion layer width.

Observations on the role of the steel disc counterface during the sliding of various structural ceramics

Sliding wear characteristics and mechanisms of structural ceramics, namely Al2O3, zirconia-toughened alumina, tetragonal zirconia polycrystals (TZP) and Si3N4 against a steel counterface are influenced by mechanical and tribochemical interactions, specific to the combinations studied. The present paper studies the role of the disc in the sliding wear process of the above ceramics. Experiments were conducted at a pressure of 15.5 MPa between 0.1 and 12.0 m s(-1) with ceramic pins sliding against an EN-24 steel disc. Except in the case of TZP, the disc morphology is sensitive to variations in speed rather than to the pin material. The disc track is (i) mildly abraded at low speeds (about 0.1-0.75 m s(-1)), (ii) severely abraded at intermediate speeds (about 1.0-3.0 m s(-1)), (iii) covered with black patches at high speeds (about 4.0-6.0 m s(-1)) and (iv) completely black at very high speeds (about 7.0-12.0 m s(-1)). In the case of TZP, although black patches appear, transfer of TZP onto the disc surface and high wear of TZP occurs at 4.0 m s(-1). The order of the wear of the disc estimated from profilometric measurements is the same for all the ceramics. Except for Si3N4, the onset of wear of the ceramics is associated with the appearance of deep 'V' grooves on either side of the profile of the disc track. This can be explained on the basis of the thermal and hardness variations. Although other interaction products specific to the ceramic pin are present, the formation of iron oxides dominates the wear of the disc.