On the anharmonic vibrations in crystalline silicon

Using a total of 1052 Bragg reflections of silicon, an X-ray investigation has been carried out to deduce the anharmonic thermal parameter beta, apart from the estimation of the harmonic contribution of the thermal vibration at room temperature. Reflections of type h + k + l = 4n, and 4n +/- 1 were used to estimate these parameters using MoKalpha radiation and a Nonius CAD-4 X-ray diffractometer. We obtain B(Si) = 0.451 (0.008) angstrom2 and beta(Si) = 0.279(2.630) eV angstrom-3 with R = 3.12%. The present B and beta values are in very good agreement with the earlier studies.

Ultrasonic wave characteristics of a monolayer graphene on silicon substrate

The present work deals with an ultrasonic type of wave propagation characteristics of monolayer graphene on silicon (Si) substrate. An atomistic model of a hybrid lattice involving a hexagonal lattice of graphene and surface atoms of diamond lattice of Si is developed to identify the carbon-silicon bond stiffness. Properties of this hybrid lattice model is then mapped into a nonlocal continuum framework. Equivalent force constant due to Si substrate is obtained by minimizing the total potential energy of the system. For this equilibrium configuration, the nonlocal governing equations are derived to analyze the ultrasonic wave dispersion based on spectral analysis. From the present analysis we show that the silicon substrate affects only the flexural wave mode. The frequency band gap of flexural mode is also significantly affected by this substrate. The results also show that, the silicon substrate adds cushioning effect to the graphene and it makes the graphene more stable. The analysis also show that the frequency bang gap relations of in-plane (longitudinal and lateral) and out-of-plane (flexural) wave modes depends not only on the y-direction wavenumber but also on nonlocal scaling parameter. In the nonlocal analysis, at higher values of the y-directional wavenumber, a decrease in the frequency band gap is observed for all the three fundamental wave modes in the graphene-silicon system. The atoms movement in the graphene due to the wave propagation are also captured for all the tree fundamental wave modes. The results presented in this work are qualitatively different from those obtained based on the local analysis and thus, are important for the development of graphene based nanodevices such as strain sensor, mass and pressure sensors, atomic dust detectors and enhancer of surface image resolution that make use of the ultrasonic wave dispersion properties of graphene. (C) 2011 Elsevier Ltd. All rights reserved.

Studies on process induced deep levels in silicon

An attempt was made to study the deep level impurities and defects introduced into thyristor grade silicon under different processing conditions. DLTS, C-V and I-V measurements were carried out. The ideality factors of the diodes is around 1-7. Activation energy, trap density and minority carrier lifetime were measured.

The effect of SiC particles on the size and morphology of eutectic silicon in cast A356/SiCp composites

Properties of cast aluminium matrix composites are greatly influenced by the nature of distribution of reinforcing phase in the matrix and matrix microstructural length scales, such as grain size, dendrite arm spacing, size and morphology of secondary matrix phases, etc. Earlier workers have shown that SIC reinforcements can act as heterogeneous nucleation sites for Si during solidification of Al-Si-SiC composites. The present study aims at a quantitative understanding of the effect of SiC reinforcements on secondary matrix phases, namely eutectic Si, during solidification of A356 Al-SiC composites. Effect of volume fraction of SiC particulate on size and shape of eutectic Si has been studied at different cooling rates. Results indicate that an increase in SiC volume fraction leads to a reduction in the size of eutectic Si and also changes its morphology from needle-like to equiaxed. This is attributed to the heterogeneous nucleation of eutectic Si on SiC particles. However, SiC particles are found to have negligible influence on DAS. Under all the solidification conditions studied in the present investigation, SiC particles are found to be rejected by the growing dendrites. (C) 1999 Elsevier Science Ltd. All rights reserved.

Effect of granularity on the insulator-superconductor transition in ultrathin Bi films

We have studied the insulator-superconductor transition (IST) by tuning the thickness in quench-condensed Bi films. The resistive transitions of the superconducting films are smooth and can be considered to represent ''homogeneous'' films. The observation of an IST very close to the quantum resistance for pairs R-square(N) similar to h/4e(2) on several substrates supports this idea. The relevant length scales here are the localization length, and the coherence length. However, at the transition, the localization length is much higher than the superconducting coherence length, contrary to expectation for a "homogeneous" transition. This suggests the invalidity of a purely fermionic model for the transition. Furthermore, the current-voltage characteristics of the superconducting films are hysteretic, and show the films to be granular. The relevant energy scales here are the Josephson coupling energy and the charging energy. However, Josephson coupling energies (E-J) and the charging energies (E-c) at the IST, they are found to obey the relation E-j < E-c. This is again contrary to expectation, for the IST in a granular or inhomogeneous system. Hence, a purely bosonic picture of the transition is also inconsistent with our observations. We conclude that the IST observed in our experiments may be either an intermediate case between the fermioinc and bosonic mechanisms, or in a regime of charge and vortex dynamics for which a quantitative analysis has not yet been done.

Studies on the deposition and characterization of silicon oxide films for optical coating applications

Silicon oxide films were deposited by reactive evaporation of SiO. Parameters such as oxygen partial pressure and substrate temperature were varied to get variable and graded index films. Films with a refractive index in the range 1.718 to 1.465 at 550 nm have been successfully deposited. Films deposited using ionized oxygen has the refractive index 1.465 at 550 nm and good UV transmittance like bulk fused quartz. Preparation of graded index films was also investigated by changing the oxygen partial pressure during deposition. A two layer antireflection coating at 1064nm has been designed using both homogeneous and inhomogeneous films and studied their characteristics.

Spin-polarized STM spectra of Dirac electrons on the surface of a topological insulator

We provide a theory for the tunneling conductance G(V) of Dirac electrons on the surface of a topological insulator as measured by a spin-polarized scanning tunneling microscope tip for low-bias voltages V. We show that if the in-plane rotational symmetry on the surface of the topological insulator is broken by an external field that does not couple to spin directly (such as an in-plane electric field), G(V) exhibits an unconventional dependence on the direction of the magnetization of the tip, i.e., it acquires a dependence on the azimuthal angle of the magnetization of the tip. We also show that G(V) can be used to measure the magnitude of the local out-of-plane spin orientation of the Dirac electrons on the surface. We explain the role of the Dirac electrons in this unconventional behavior and suggest experiments to test our theory.

Temperature dependent transport studies in InN quantum dots grown by droplet epitaxy on silicon nitride/Si substrate

InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of InN QDs was verified by transmission electron microscopy, and the chemical bonding configurations of InN QDs were examined by x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to the bulk InN, arising from size dependent quantum confinement effect. The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of InN QDs were studied in a metal-semiconductor-metal configuration in the temperature range of 80-300K. The I-V characteristics of lateral grown InN QDs were explained by using the trap model. (C) 2011 American Institute of Physics. [doi:10.1063/1.3651762]

Studies on dielectric behavior of insulator‐conductor composites

This paper describes the dielectric behavior of an insulator‐conductor composite, namely, the wax‐graphite composite. The variation of specific capacitance of these composites with parameters such as volume fraction and grain size of the conducting particles and temperature has been studied. These observed variations have been explained using the same model [C. Rajagopal and M. Satyam, J. Appl. Phys. 49, 5536 (1978)] which explains electrical conduction in composites. The specific capacitance of these materials appears to be governed by the contact capacitance between the conducting particles and the number of contacts each particle has with its neighbors. The variation of specific capacitance with temperature is attributed to the change in contact area.

Amorphous Hydrogenated Silicon: A Perspective on Circuit Synthesis

Abstract | Non-crystalline or glassy semiconductors are of great research interest for the fabrication of large area electronic systems such as displays and image sensors. Good uniformity over large areas, low temperature fabrication and the promise of low cost electronics on large area mechanically flexible and rigid substrates are some attractive features of these technologies. The article focusses on amorphous hydrogenated silicon thin film transistors, and reviews the problems, solutions and applications of these devices.