Evolution of quantum discord and its stability in two-qubit NMR systems

We investigate evolution of quantum correlations in ensembles of two-qubit nuclear spin systems via nuclear magnetic resonance techniques. We use discord as a measure of quantum correlations and the Werner state as an explicit example. We, first, introduce different ways of measuring discord and geometric discord in two-qubit systems and then describe the following experimental studies: (a) We quantitatively measure discord for Werner-like states prepared using an entangling pulse sequence. An initial thermal state with zero discord is gradually and periodically transformed into a mixed state with maximum discord. The experimental and simulated behavior of rise and fall of discord agree fairly well. (b) We examine the efficiency of dynamical decoupling sequences in preserving quantum correlations. In our experimental setup, the dynamical decoupling sequences preserved the traceless parts of the density matrices at high fidelity. But they could not maintain the purity of the quantum states and so were unable to keep the discord from decaying. (c) We observe the evolution of discord for a singlet-triplet mixed state during a radio-frequency spin-lock. A simple relaxation model describes the evolution of discord, and the accompanying evolution of fidelity of the long-lived singlet state, reasonably well.

A mixture model approach for formant tracking and the robustness of student's-t distribution

We address the problem of robust formant tracking in continuous speech in the presence of additive noise. We propose a new approach based on mixture modeling of the formant contours. Our approach consists of two main steps: (i) Computation of a pyknogram based on multiband amplitude-modulation/frequency-modulation (AM/FM) decomposition of the input speech; and (ii) Statistical modeling of the pyknogram using mixture models. We experiment with both Gaussian mixture model (GMM) and Student's-t mixture model (tMM) and show that the latter is robust with respect to handling outliers in the pyknogram data, parameter selection, accuracy, and smoothness of the estimated formant contours. Experimental results on simulated data as well as noisy speech data show that the proposed tMM-based approach is also robust to additive noise. We present performance comparisons with a recently developed adaptive filterbank technique proposed in the literature and the classical Burg's spectral estimator technique, which show that the proposed technique is more robust to noise.

Stress and texture development during sputtering of yttria, zirconia, and yttria stabilized zirconia films on Si substrates

Understanding and controlling growth stress is a requisite for integrating oxides with Si. Yttria stabilized zirconia (YSZ) is both an important functional oxide and a buffer layer material needed for integrating other functional oxides. Stress evolution during the growth of (100) and (111) oriented YSZ on Si (100) by radio frequency and reactive direct current sputtering has been investigated with an in-situ monitor and correlated with texture evolution. Films nucleated at rates <5 nm/min are found to be (111) oriented and grow predominantly under a compressive steady state stress. Films nucleated at rates >20 nm/min are found to be (100) oriented and grow under tension. A change in growth rate following the nucleation stage does not change the orientation. The value of the final steady state stress varies from -4.7 GPa to 0.3 GPa. The in-situ studies show that the steady state stress generation is a dynamic phenomenon occurring at the growth surface and not decided at film nucleation. The combination of stress evolution and texture evolution data shows that the adatom injection into the grain boundaries is the predominant source of compressive stress and grain boundary formation at the growth surface is the source of tensile stress. (C) 2012 American Institute of Physics. http://dx.doi.org/10.1063/1.4757924]

Switching of a Sixteen Electrode Array for Wireless EIT System Using a RF-Based 8-Bit Digital Data Transmission Technique

Surface electrode switching of 16-electrode wireless EIT is studied using a Radio Frequency (RF) based digital data transmission technique operating with 8 channel encoder/decoder ICs. An electrode switching module is developed the analog multiplexers and switched with 8-bit parallel digital data transferred by transmitter/receiver module developed with radio frequency technology. 8-bit parallel digital data collected from the receiver module are converted to 16-bit digital data by using binary adder circuits and then used for switching the electrodes in opposite current injection protocol. 8-bit parallel digital data are generated using NI USB 6251 DAQ card in LabVIEW software and sent to the transmission module which transmits the digital data bits to the receiver end. Receiver module supplies the parallel digital bits to the binary adder circuits and adder circuit outputs are fed to the multiplexers of the electrode switching module for surface electrode switching. 1 mA, 50 kHz sinusoidal constant current is injected at the phantom boundary using opposite current injection protocol. The boundary potentials developed at the voltage electrodes are measured and studied to assess the wireless data transmission.

RRI-GBT MULTI-BAND RECEIVER: MOTIVATION, DESIGN, AND DEVELOPMENT

We report the design and development of a self-contained multi-band receiver (MBR) system, intended for use with a single large aperture to facilitate sensitive and high time-resolution observations simultaneously in 10 discrete frequency bands sampling a wide spectral span (100-1500 MHz) in a nearly log-periodic fashion. The development of this system was primarily motivated by need for tomographic studies of pulsar polar emission regions. Although the system design is optimized for the primary goal, it is also suited for several other interesting astronomical investigations. The system consists of a dual-polarization multi-band feed (with discrete responses corresponding to the 10 bands pre-selected as relatively radio frequency interference free), a common wide-band radio frequency front-end, and independent back-end receiver chains for the 10 individual sub-bands. The raw voltage time sequences corresponding to 16 MHz bandwidth each for the two linear polarization channels and the 10 bands are recorded at the Nyquist rate simultaneously. We present the preliminary results from the tests and pulsar observations carried out with the Robert C. Byrd Green Bank Telescope using this receiver. The system performance implied by these results and possible improvements are also briefly discussed.

A Markov Decision Theoretic Approach to Pilot Allocation and Receive Antenna Selection

This paper considers antenna selection (AS) at a receiver equipped with multiple antenna elements but only a single radio frequency chain for packet reception. As information about the channel state is acquired using training symbols (pilots), the receiver makes its AS decisions based on noisy channel estimates. Additional information that can be exploited for AS includes the time-correlation of the wireless channel and the results of the link-layer error checks upon receiving the data packets. In this scenario, the task of the receiver is to sequentially select (a) the pilot symbol allocation, i.e., how to distribute the available pilot symbols among the antenna elements, for channel estimation on each of the receive antennas; and (b) the antenna to be used for data packet reception. The goal is to maximize the expected throughput, based on the past history of allocation and selection decisions, and the corresponding noisy channel estimates and error check results. Since the channel state is only partially observed through the noisy pilots and the error checks, the joint problem of pilot allocation and AS is modeled as a partially observed Markov decision process (POMDP). The solution to the POMDP yields the policy that maximizes the long-term expected throughput. Using the Finite State Markov Chain (FSMC) model for the wireless channel, the performance of the POMDP solution is compared with that of other existing schemes, and it is illustrated through numerical evaluation that the POMDP solution significantly outperforms them.

RF plasma MOCVD of Y2O3 thin films: Effect of RF self-bias on the substrates during deposition

Yttrium oxide (Y203) thin films have been deposited by radio frequency plasma assisted metal organic chemical vapor deposition (MOCVD) process using (2,2,6,6-tetramethy1-3,5-heptanedionate) yttrium (commonly known as Y(thd)3) precursor in a plasma of argon and oxygen gases at a substrate temperature of 350 C. The films have been deposited under influence of varying RF self-bias (-50 V to 175 V) on silicon, quartz, stainless steel and tantalum substrates. The deposited coatings are characterized by glancing angle X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry and scanning electron microscopy (SEM). GIXRD and FTIR results indicate deposition of Y2 03 (BCC structure) in all cases. However, XPS results indicate nonstoichiometric cubic phase deposition on the surface of deposited films. The degree of nonstoichiometry varies with bias during deposition. Ellipsometry results indicate that the refractive index for the deposited films is varying from 1.70 to 1.83 that is typical for Y203. All films are transparent in the investigated wavelength range 300-1200 nm. SEM results indicate that the microstructure of the films is changing with applied bias. Results indicate that it is possible to deposit single phase cubic Y203 thin films at low substrate temperature by RF plasma MOCVD process. RF self-bias that decides about the energy of impinging ions on the substrates plays an important role in controlling the texture of deposited Y203 films on the substrates. Results indicate that to control the structure of films and its texture, it is important to control the bias on the substrate during deposition. The films deposited at high bias level show degradation in the crystallinity and reduction of thickness. (C) 2013 Elsevier B.V. All rights reserved.

Experimental Study on Substrate Noise Effects of a Pulsed Clocking Scheme on PLL Performance

In this brief, the substrate noise effects of a pulsed clocking scheme on the output spur level, the phase noise, and the peak-to-peak (Pk-Pk) deterministic period jitter of an integer-N charge-pump phase-locked loop (PLL) are demonstrated experimentally. The phenomenon of noise coupling to the PLL is also explained through experiments. The PLL output frequency is 500 MHz and it is implemented in the 0.13-mu m CMOS technology. Measurements show a reduction of 12.53 dB in the PLL output spur level at an offset of 5 MHz and a reduction of 107 ps in the Pk-Pk deterministic period jitter upon reducing the duty cycle of the signal injected into the substrate from 50% to 20%. The results of the analyses suggest that using a pulsed clocking scheme for digital systems in mixed-signal integration along with other isolation techniques helps reduce the substrate noise effects on sensitive analog/radio-frequency circuits.

Sputter Deposited High Capacity Li2-xMnO3-y Films for Thin Film Battery Application

Lithium manganese oxide (Li2-xMnO3-y) thin films have been deposited from activated Li2MnO3 powder by radio frequency magnetron sputtering for the first time in the literature and subjected to electrochemical characterization. Physicochemical characterization by X-ray diffraction has revealed the formation of the thin films with crystallographic phase identical to that of the powder target made of Li2-xMnO3-y. The Li:Mn atomic ratio for the powder and film are calculated by X-ray photoelectron spectroscopy and it is found to be 1.6:1.0. From galvanostatic charge discharge studies, a specific discharge capacity of 139 mu Ah mu m(-1) cm(-2) was obtained when cycled between 2.00 and 3.50 V vs Li/Li+. Additionally the rate capability of the thin film electrodes was studied by subjecting the cells to charge-discharge cycling at different current densities in the range from 10 mu A cm(-2) to 100 mu A cm(-2). (C) 2013 The Electrochemical Society. All rights reserved.

Effect of post-deposition annealing on transverse piezoelectric coefficient and vibration sensing performance of ZnO thin films

The present experimental study investigates the influence of post-deposition annealing on the transverse piezoelectric coefficient (d(31)) value of ZnO thin films deposited on a flexible metal alloy substrate, and its relationship with the vibration sensing performance. Highly c-axis oriented and crystalline ZnO thin films were deposited on flexible Phynox alloy substrate via radio frequency (RF) reactive magnetron sputtering. ZnO thin film samples were annealed at different temperatures ranging from 100 degrees C to 500 degrees C, resulting in the temperature of 300 degrees C determined as the optimum annealing temperature. The crystallinity, morphology, microstructure, and rms surface roughness of annealed ZnO thin films were systematically investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM), respectively. The piezoelectric d(31) coefficient value was measured by 4-point bending method. ZnO thin film annealed at 300 degrees C was highly c-axis oriented, crystalline, possesses fine surface morphology with uniformity in the grain size. This film showed higher d(31) coefficient value of 7.2 pm V-1. A suitable in-house designed and developed experimental set-up, for evaluating the vibration sensing performance of annealed ZnO thin films is discussed. As expected the ZnO thin film annealed at 300 degrees C showed relatively better result for vibration sensing studies. It generates comparatively higher peak output voltage of 147 mV, due to improved structural and morphological properties, and higher piezoelectric d(31) coefficient value. (C) 2014 Elsevier B. V. All rights reserved.

Effect of Substrate Temperature on the Microstructure Variation in Sputter-deposited Hydrogenated Amorphous Silicon Thinfilms

Vacancy, void incorporation and Si-H-x configuration in hydrogenated amorphous silicon (a-Si:H) thin films was studied. Films were grown by Direct Current (DC), pulsed DC and Radio Frequency (RF) magnetron sputtering. Fourier Transform Infrared (FTIR) spectroscopic analysis has been carried out on the films and found that, the a-Si: H films grown by DC magnetron sputtering are of good quality compared to pulsed DC and RF deposited films. The effect of Substrate temperature (T-S) on the total hydrogen concentration (C-H), configuration of hydrogen bonding, density (decided by the vacancy and void incorporation) and the microstructure factor (R*) was studied. T-S is found to be an active parameter in affecting the above said properties of the films. The films contain both vacancies and voids. At low hydrogen dilutions the films are vacancy dominated and at high hydrogen dilutions they are void dominated. It is found that T-S favors monohydride (Si-H) bonding at the cost of dihydride (Si-H-2) bonding. This dividing line is at C-H=14 at.% H for DC sputter deposited films. The microstructure structure factor R* is found to be zero for as deposited DC films at T-S=773K. The threshold C-H for void dominated region is found to be C-H=23 at.% H for RF, C-H=18 at.% H for PDC and C-H similar to 14 at.%H for DC sputter deposited films.

Switching and Release Time Analysis of Electrostatically Actuated Capacitive RF MEMS Switches

This paper explains the reason behind pull-in time being more than pull-up time of many Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches at actuation voltages comparable to the pull-in voltage. Analytical expressions for pull-in and pull-up time are also presented. Experimental data as well as finite element simulations of electrostatically actuated beams used in RF-MEMS switches show that the pull-in time is generally more than the pull-up time. Pull-in time being more than pull-up time is somewhat counter-intuitive because there is a much larger electrostatic force during pull-in than the restoring mechanical force during the release. We investigated this issue analytically and numerically using a 1D model for various applied voltages and attribute this to energetics, the rate at which the forces change with time, and softening of the overall effective stiffness of the electromechanical system. 3D finite element analysis is also done to support the 1D model-based analyses.

Application of Qualitative Imaging Methods to Electrical Performance-Aware Package Board Design

Package-board co-design plays a crucial role in determining the performance of high-speed systems. Although there exist several commercial solutions for electromagnetic analysis and verification, lack of Computer Aided Design (CAD) tools for SI aware design and synthesis lead to longer design cycles and non-optimal package-board interconnect geometries. In this work, the functional similarities between package-board design and radio-frequency (RF) imaging are explored. Consequently, qualitative methods common to the imaging community, like Tikhonov Regularization (TR) and Landweber method are applied to solve multi-objective, multi-variable package design problems. In addition, a new hierarchical iterative piecewise linear algorithm is developed as a wrapper over LBP for an efficient solution in the design space.

Wireless Aircraft Fuel Quantity Indication System

A wireless fuel quantity indication system (FQIS) has been developed using an RFID-enabled sensing platform. The system comprises a fully passive tag, modified reader protocol, capacitive fuel probe, and auxiliary antenna for additional energy harvesting. Results of fluid testing show sensitivity to changes in fluid height of less than 0.25in. An RF-DC harvesting circuit was developed, which delivers up to 5dBm of input power through a remote radio frequency (RF) source. Testing was conducted in a loaded reverberation chamber to emulate the fuel tank environment. Results demonstrate feasibility of the remote source to power the sensor with less than 1W of maximum transmit power and under 100ms dwell time (100mW average power) into the tank. This indicates adequate coverage for large transport aircraft at safe operating levels with a sample rate of up to 1 sample/s.

Study of Multilevel Sinusoidal PWM methods for Cascaded H-Bridge Multilevel Inverters

This paper is a study of Multilevel Sinusoidal Pulse Width Modulation (MSPWM) methods; Phase Disposition (PD), Alternate Phase Opposition Disposition (APOD), Phase Opposition Disposition (POD) on a single phase Cascaded H-Bridge Multilevel inverter. Various factors such as amplitude modulation index (Ma), frequency modulation index (M-f), phase angle between carrier and reference modulating wave (phi) have been considered for simulation. Variation in these factors and their effect on inverter performance is evaluated. Factors such as DC bus utilization, output r.m.s voltage, total harmonic distortion (%THD), dominant harmonic order, switching losses are evaluated based on simulation results.