Effect of Pt doping on the gas sensing properties of porous chromium oxide films through a kinetic response analysis approach

The effect of doping trace amounts of noblemetals (Pt) on the gas sensing properties of chromium oxide thin films, is studied. The sensors are fabricated by depositing chromium oxide films on a glass substrate using a modified spray pyrolysis technique and characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The films are porous and nanocrystalline with an average crystallite size of similar to 30 nm. The typical p-type conductivity arises due to the presence of Cr vacancies, formed as a result of Cr non-stoichiometry, which is found to vary upon Pt doping. In order to analyze the effect of doping on the gas sensing properties, we have adopted a kinetic response analysis approach, which is based on Langmuir Adsorption isotherm (LA) theory. The sensor response is analyzed with equations obtained from LA theory and time constants as well as energies of adsorption-desorption are evaluated. It is seen that, Pt doping lowers the Schottky barrier height of the metal oxide semiconductor sensor from 222 meV to 172 meV. Subsequently the reduction in adsorption and desorption energies led to enhancement in sensor response and improvement in the kinetics of the sensor response i.e. the response time as well as recovery times of the sensor.

Synthesis and Characterization of Carbon-Coated LiNi1/3Co1/3Mn1/3O2 in a Single Step by an Inverse Microemulsion Route

Layered LiNi1/3Co1/3Mn1/3O2, which is isostructural to LiCoO2, is considered as a potential cathode material. A layer of carbon coated on the particles improves the electrode performance, Which is attributed to an increase of the grain connectivity and also to protection of metal oxide from chemical reaction. The present work involves in situ synthesis of carbon-coated submicrometer-sized particles of LiNi1/3Co1/3Mn1/3O2 in an inverse microemulsion medium in the presence of glucose. The precursor obtained from the reaction is heated in air at 900 degrees C for 6 h to get crystalline LiNi1/3Co1/3Mn1/3O2. The carbon coating is found to impart porosity as well as higher surface area in relation to bare samples of the compound. The electrochemical characterization studies provide that carbon-coated LiNi1/3Co1/3Mn1/3O2 samples exhibit improved rate capability and cycling performance. The carbon coatings are shown to suppress the capacity fade, which is normally observed for the bare compound. Impedance spectroscopy data provide additional evidence for the beneficial effect of a carbon coating on LiNi1/3Co1/3Mn1/3O2 particles.

Surface oxidation of cadmium, indium, tin and antimony by photoelectron and Auger spectroscopy

Surface oxidation of Cd, In, Sn and Sb has been investigated by employing valence bands, metal 4d levels and plasmon bands in X-ray photoelectron spectra. O(KLL), metal M4N45N45, and plasmon transitions in electron-induced Auger spectra as well as Auger transitions due to the metal (metal oxide) and plasmons in X-ray-induced Auger spectra. The surface oxides are In2O4, CdO and a mixture of SnO and SnO2 in the case of In. Cd and Sn respectively. The facility of surface oxidation is found to vary as In>Cd>Sn>Sb. Inter-atomic Auger transitions involving oxygen valence bands have been identified on oxidized surfaces of Cd and In.

Optical, dielectric and morphological studies of sol-gel derived nanocrystalline TiO2 films

Nanocrystalline TiO2 films have been synthesized on glass and silicon substrates by sol-gel technique. The films have been characterized with optical reflectance/transmittance in the wavelength range 300-1000nm and the optical constants (n, k) were estimated by using envelope technique as well as spectroscopic ellipsometry. Morphological studies have been carried Out using atomic force microscope (AFM). Metal-Oxide-Silicon (MOS) capacitor was fabricated using conducting coating on TiO2 film deposited on silicon. The C-V measurements show that the film annealed at 300 degrees C has a dielectric constant of 19.80. The high percentage of transmittance, low surface roughness and high dielectric constant suggests that it can be used as an efficient anti-reflection coating on silicon and other optical coating applications and also as a MOS capacitor.

Electronic phase separation in correlated oxides: The phenomenon, its present status and future prospects

Many transition metal oxide materials of high chemical purity are not necessarily monophasic. Thus, single crystals of chemically pure rare earth manganites and cobaltates of the general formula Ln1-xAxMO3 (Ln=rare earth metal, A=alkaline earth metal, M=Mn, Co) exhibit the phenomenon of electronic phase separation wherein phases of different electronic and magnetic properties coexist. Such phase separation, the length scale of which can vary anywhere between a few nanometers to microns, gives distinct signatures in X-ray and neutron diffraction patterns, electrical and magnetic properties, as well as in NMR and other spectroscopies. While the probe one employs to investigate electronic phase separation depends on the length scale, it is noteworthy that direct imaging of the inhomogeneities has been accomplished. Some understanding of this phenomenon has been possible on the basis of some of the theoretical models, but we are far from unraveling the varied aspects of this new phenomenon. Herein, we present the highlights of experimental techniques and theoretical approaches, and comment on the future outlook for this fascinating phenomenon

Design of temperature-compensated reference electrodes for non-isothermal galvanic sensors

The criterion for the design of a temperature-compensated reference electrode for non-isothermal galvanic sensors is deduced from the basic flux equations of irreversible thermodynamics. It is shown that when the Seebeck coefficient of the non-isothermal cell using a solid oxygen ion-conducting electrolyte under pure oxygen is equal to the relative partial molar entropy of oxygen in the reference electrode divided by 4F, then the EMF of the non-isothermal cell is the same as that of an isothermal cell with the same electrodes operating at the higher temperature. By measuring the temperature of the melt alone and the EMF of the non-isothermal galvanic sensor, one can derive the chemical potential or the concentration of oxygen in a corrosive medium. The theory is experimentally checked using sensors for oxygen in liquid copper constructed with various metal+oxide electrodes and fully stabilised (CaO)ZrO2 as the electrolyte. To satisfy the exact condition for temperature compensation it is often necessary to have the metal or oxide as a solid solution in the reference electrode.

Electric and magnetic polarizabilities of hexagonal Ln(2)CuTiO(6)(Ln = Y, Dy, Ho, Er, and Yb)

We investigated the rare-earth transition-metal oxide series, Ln(2)CuTiO(6) (Ln = Y, Dy, Ho, Er, and Yb), crystallizing in the hexagonal structure with noncentrosymmetric P6(3)cm space group for possible occurrences of multiferroic properties. Our results show that while these compounds, except Ln = Y, exhibit a low-temperature antiferromagnetic transition due to the ordering of the rare-earth moments, the expected ferroelectric transition is frustrated by the large size difference between Cu and Ti at the B site. Interestingly, this leads these compounds to attain a rare and unique combination of desirable paraelectric properties with high dielectric constants, low losses, and weak temperature and frequency dependencies. First-principles calculations establish these exceptional properties result from a combination of two effects. A significant difference in the MO5 polyhedral sizes for M = Cu and M = Ti suppress the expected cooperative tilt pattern of these polyhedra, required for the ferroelectric transition, leading to relatively large values of the dielectric constant for every compound investigated in this series. Additionally, it is shown that the majority contribution to the dielectric constant arises from intermediate-frequency polar vibrational modes, making it relatively stable against any temperature variation. Changes in the temperature stability of the dielectric constant among different members of this series are shown to arise from changes in relative contributions from soft polar modes.

Behaviour of power MOSFETs at cryogenic temperatures

In this paper an investigation is reported on Siemens-power-metal-oxide-semiconductor (SIPMOS) transistors of both p and n channel types, for their suitability for cryogenic applications. The drain characteristics, temperature dependence of Rds(on) and switching behaviour have been studied in the temperature range 4.2 – 300 K in BSS91 and BSS92 MOSFETs. The experiments reveal that these types of power transistors are well suited for operations down to ≈ 30 K. However, below 30 K the operating characteristics make them unsuitable for application. This arises because of carrier freeze-out in the n− region on the substrate, which forms a drain.

Analytical modeling of quantum threshold voltage for triple gate MOSFET

In this work a physically based analytical quantum threshold voltage model for the triple gate long channel metal oxide semiconductor field effect transistor is developed The proposed model is based on the analytical solution of two-dimensional Poisson and two-dimensional Schrodinger equation Proposed model is extended for short channel devices by including semi-empirical correction The impact of effective mass variation with film thicknesses is also discussed using the proposed model All models are fully validated against the professional numerical device simulator for a wide range of device geometries (C) 2010 Elsevier Ltd All rights reserved

Large-Signal Model for Independent DG MOSFET

In this paper, we show the limitations of the traditional charge linearization techniques for modeling terminal charges of the independent double-gate metal-oxide-semiconductor field-effect transistors. Based on our recent computationally efficient Poisson solution for independent double gate transistors, we propose a new charge linearization technique to model the terminal charges and transcapacitances. We report two different types of quasistatic large-signal models for the long-channel device. In the first type, the terminal charges are expressed as closed-form functions of the source- and drain-end inversion charge densities and found to be accurate when the potential distribution at source end of the channel is hyperbolic in nature. The second type, which is found to be accurate in all regimes of operations, is based on the quadratic spline collocation technique and requires the input voltage equation to be solved two more times, apart from the source and drain ends.

Investigations of carbon nanotubes

Experiments have been carried out to optimize the yields of carbon nanotubes obtained by the arc-evaporation of graphite. Other types of carbon particles such as nanocrystalline graphite usually present along with the nanotubes are readily removed by heating the material in oxygen around 763 K. Clean nanotubes so obtained have been characterized by X-ray diffraction. The clean tubes are thermally more stable than graphite or fullerenes. The tips of carbon nanotubes are opened by reaction with oxygen, but more interestingly, when the oxygen produced by the decomposition of a metal oxide is used to open the tube tips, the metal formed in the process enters the nanotube. Electrical resistance of pressed pellets of clean tubes is not unlike that of graphite. Tunnelling conductance measurements on isolated tubes characterized by means of scanning tunnelling microscopy however show that the conductance gap increases with decreasing tube diameter.

Diffusion path during internal displacement reactions in multi-component oxides: Reaction between Fe and (Co,Mg)TiO3 solid solution at 1273 K

The reaction between Fe foil and a disc of ilmenite solid solution (Co-0.48 Ni-0.52) TiO3 was studied at 1273 K. At the metal/oxide interface, the displacement reaction, Fe + (Co,Mg)TiO3 = Co + (Fe,Mg)TiO3 occurs, resulting in an ilmenite solid solution containing three divalent cations. Ferrous ions diffuse into the oxide solid solution and cause the precipitation of Co-Fe alloy as discrete particles inside the oxide matrix. The morphology of the product layer was characterized by SEM. Only two phases, alloy and ilmenite, were detected in the reaction zone. This suggests that the local flux condition imposed by ilmenite stoichiometry (Co + Fe + Mg):Ti = 1:1] was satisfied during the reactive diffusion: (J(Co) + J(Fe) + J(Mg)) = J(Ti). The composition of the alloy and the oxide was determined using EPMA as a function of distance in the direction of diffusion. Although Mg does not participate in the displacement reaction, its composition in the ilmenite phase was found to be position dependent inside the reaction zone. The up-hill diffusion of inert Mg is caused by the development of chemical potential gradients as a result of displacement reaction. The evolution of composition gradients inside the reaction zone and the diffusion path in a ternary composition diagram of the system CoTiO3-FeTiO3-MgTiO3 are discussed. (C) 2010 Elsevier B.V. All rights reserved.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

Thermodynamic properties of Fe3O4 FeAl2O4 spinel solid solution

The Gibbs energy of mixing for the system Fe3O4-FeAl2O4 was determined at 1573 K using a gas-metal-oxide equilibration technique. Oxide solid solution samples were equilibrated with Pt foils under controlled CO+CO2 gas streams. The equilibrium iron concentration in the foil was determined by chemical analysis. The cation distribution between tetrahedral and octahedral sites in the spinel crystal can be calculated from site-preference energies and used as an alternate method of determining some thermodynamic properties, including the Gibbs energy of mixing. The solvus occurring at low temperatures in the system Fe3C4-FeAl2C4 was used to derive the effect of lattice distortion due to cation size difference on the enthalpy of mixing and to obtain a better approximation to the measured thermodynamic quantities.

Thermodynamic properties of Cr Mo solid alloys

The activity of Cr in solid Cr-Mo alloys has been measured at 1873 K using a metal-oxide-gas equilibrium technique. Thin foils of Mo were equilibrated with solid Cr203 under flowing gas mixtures of argon, hydrogen and watervapourof known composition. The equilibrium concentration of Cr in Mo was determined by chemical analysis. These measurements indicate positive deviations from Raoult's law. The activity data obtained in the study at 1873 K are combined with free energy of mixing at 1471 K, calorimetric enthalpy of mixing at 1673 K, and experimental evidence of phase separation at lower temperatures, reported in the literature, to obtain an optimised set of thermodynamic parameters for the Cr-Mosystem in the solid state.