Some experiments on human memory and a new neural model

An associative memory with parallel architecture is presented. The neurons are modelled by perceptrons having only binary, rather than continuous valued input. To store m elements each having n features, m neurons each with n connections are needed. The n features are coded as an n-bit binary vector. The weights of the n connections that store the n features of an element has only two values -1 and 1 corresponding to the absence or presence of a feature. This makes the learning very simple and straightforward. For an input corrupted by binary noise, the associative memory indicates the element that is closest (in terms of Hamming distance) to the noisy input. In the case where the noisy input is equidistant from two or more stored vectors, the associative memory indicates two or more elements simultaneously. From some simple experiments performed on the human memory and also on the associative memory, it can be concluded that the associative memory presented in this paper is in some respect more akin to a human memory than a Hopfield model.

Influence of Substrate Temperature and Deposition Rate on Structural and Mechanical Properties of Shape Memory NiTi Films

NiTi thin films deposited by DC magnetron sputtering of an alloy (Ni/Ti:45/55) target at different deposition rates and substrate temperatures were analyzed for their structure and mechanical properties. The crystalline structure, phase-transformation and mechanical response were characterized by X-ray diffraction (XRD), Differential Scanning Calorimetry (DSC) and Nano-indentation techniques, respectively. The films were deposited on silicon substrates maintained at temperatures in the range 300 to 500 degrees C and post-annealed at 600 degrees C for four hours to ensure film crystallinity. Films deposited at 300 degrees C and annealed for 600 degrees C have exhibited crystalline behavior with Austenite phase as the prominent phase. Deposition onto substrates held at higher deposition temperatures (400 and 500 degrees C) resulted in the co-existence of Austenite phase along with Martensite phase. The increase in deposition rates corresponding to increase in cathode current from 250 to 350 mA has also resulted in the appearance of Martensite phase as well as improvement in crystallinity. XRD analysis revealed that the crystalline film structure is strongly influenced by process parameters such as substrate temperature and deposition rate. DSC results indicate that the film deposited at 300 degrees C had its crystallization temperature at 445 degrees C in the first thermal cycle, which is further confirmed by stress temperature response. In the second thermal cycle the Austenite and Martensite transitions were observed at 75 and 60 degrees C respectively. However, the films deposited at 500 degrees C had the Austenite and Martensite transitions at 73 and 58 degrees C, respectively. Elastic modulus and hardness values increased from 93 to 145 GPa and 7.2 to 12.6 GPa, respectively, with increase in deposition rates. These results are explained on the basis of change in film composition and crystallization. (C) 2010 Published by Elsevier Ltd

Memory Bandwidth and Power Reduction Using Lossy Reference Frame Compression in Video Encoding

Large external memory bandwidth requirement leads to increased system power dissipation and cost in video coding application. Majority of the external memory traffic in video encoder is due to reference data accesses. We describe a lossy reference frame compression technique that can be used in video coding with minimal impact on quality while significantly reducing power and bandwidth requirement. The low cost transformless compression technique uses lossy reference for motion estimation to reduce memory traffic, and lossless reference for motion compensation (MC) to avoid drift. Thus, it is compatible with all existing video standards. We calculate the quantization error bound and show that by storing quantization error separately, bandwidth overhead due to MC can be reduced significantly. The technique meets key requirements specific to the video encode application. 24-39% reduction in peak bandwidth and 23-31% reduction in total average power consumption are observed for IBBP sequences.

Pulsed laser deposition of strontium titanate thin films for dynamic random access memory applications

Polycrystalline strontium titanate (SrTiO3) films were prepared by a pulsed laser deposition technique on p-type silicon and platinum-coated silicon substrates. The films exhibited good structural and dielectric properties which were sensitive to the processing conditions. The small signal dielectric constant and dissipation factor at a frequency of 100 kHz were about 225 and 0.03 respectively. The capacitance-voltage (C-V) characteristics in metal-insulator-semiconductor structures exhibited anomalous frequency dispersion behavior and a hysteresis effect. The hysteresis in the C-V curve was found to be about 1 V and of a charge injection type. The density of interface states was about 1.79 x 10(12) cm(-2). The charge storage density was found to be 40 fC mu m(-2) at an applied electric field of 200 kV cm(-1). Studies on current-voltage characteristics indicated an ohmic nature at lower voltages and space charge conduction at higher voltages. The films also exhibited excellent time-dependent dielectric breakdown behavior.

A novel (main chain) (side chain) polymeric peroxide: Synthesis and initiating characteristics of poly(alpha-(tert-butylperoxymethyl)styrene peroxide)

A novel (main chain)-(side chain) vinyl polyperoxide, poly(alpha-(tert-butylperoxymethyl)styrene peroxide) (MCSCPP), an alternating copolymer of alpha-(tert-butylperoxymethyl)styrene (TPMS) and oxygen, has been synthesized by the oxidative polymerization of TPMS. The MCSCPP was characterized by H-1 NMR, C-13 NMR, IR, DSC, EI-MS, and GC-MS studies. The overall activation energy (E(a)) for the degradation of MCSCPP was found to be 27 kcal/mol. Formaldehyde and alpha-(tert-butylperoxy)acetophenone (TPAP) were identified as the primary degradation products of MCSCPP; TPAP was found to undergo further degradation. The side chain peroxy groups were found to be thermally more stable than those in the main chain. Polymerization of styrene in the presence of MCSCPP as initiator, at 80 degrees C, follows classical kinetics. The presence of peroxy segments in the polystyrene chain was confirmed by both H-1 NMR and thermal decomposition studies. Interestingly, unlike other vinyl polyperoxides, the MCSCPP initiator shows an increase in molecular weight with conversion.

Neural network modeling of associative memory: Beyond the Hopfield model

A number of neural network models, in which fixed-point and limit-cycle attractors of the underlying dynamics are used to store and associatively recall information, are described. In the first class of models, a hierarchical structure is used to store an exponentially large number of strongly correlated memories. The second class of models uses limit cycles to store and retrieve individual memories. A neurobiologically plausible network that generates low-amplitude periodic variations of activity, similar to the oscillations observed in electroencephalographic recordings, is also described. Results obtained from analytic and numerical studies of the properties of these networks are discussed.

A Comparative Study of Electrical Switching Behavior of Certain Tellurium based Chalcogenide Thin Films for Phase Change Memory (PCM) Applications

This work describes the electrical switching behavior of three telluride based amorphous chalcogenide thin film samples, Al-Te, Ge-Se-Te and Ge-Te-Si. These amorphous thin films are made using bulk glassy ingots, prepared by conventional melt quenching technique, using flash evaporation technique; while Al-Te sample has been coated in coplanar electrode geometry, Ge-Se-Te and Ge-Te-Si samples have been deposited with sandwich electrodes. It is observed that all the three samples studied, exhibit memory switching behavior in thin film form, with Ge-Te-Si sample exhibiting a faster switching characteristic. The difference seen in the switching voltages of the three samples studied has been understood on the basis of difference in device geometry and thickness. Scanning electron microscopic image of switched region of a representative Ge15Te81Si4 sample shows a structural change and formation of crystallites in the electrode region, which is responsible for making a conducting channel between the two electrodes during switching.

WOMM: A Weak Operational Memory Model

Memory models of shared memory concurrent programs define the values a read of a shared memory location is allowed to see. Such memory models are typically weaker than the intuitive sequential consistency semantics to allow efficient execution. In this paper, we present WOMM (abbreviation for Weak Operational Memory Model) that formally unifies two sources of weak behavior in hardware memory models: reordering of instructions and weakly consistent memory. We show that a large number of optimizations are allowed by WOMM. We also show that WOMM is weaker than a number of hardware memory models. Consequently, if a program behaves correctly under WOMM, it will be correct with respect to those hardware memory models. Hence, WOMM can be used as a formally specified abstraction of the hardware memory models. Moreover; unlike most weak memory models, WOMM is described using operational semantics, making it easy to integrate into a model checker for concurrent programs. We further show that WOMM has an important property - it has sequential consistency semantics for datarace-free programs.

Low electric field, easily reversible electrical set and reset processes in a Ge15Te83Si2 glass for phase change memory applications

We report here an easily reversible set-reset process in a new Ge15Te83Si2 glass that could be a promising candidate for phase change random access memory applications. The I-V characteristics of the studied sample show a comparatively low threshold electric field (E-th) of 7.3 kV/cm. Distinct differences in the type of switching behavior are achieved by means of controlling the on state current. It enables the observation of a threshold type for less than 0.7 mA beyond memory type (set) switching. The set and reset processes have been achieved with a similar magnitude of 1 mA, and with a triangular current pulse for the set process and a short duration rectangular pulse of 10 msec width for the reset operation. Further, a self-resetting effect is seen in this material upon excitation with a saw-tooth/square pulse, and their response of leading and trailing edges are discussed. About 6.5 x 10(4) set-reset cycles have been undertaken without any damage to the device. (C) 2011 American Institute of Physics. doi: 10.1063/1.3574659]

Polymers containing disulfide, tetrasulfide, diselenide and ditelluride linkages in the main chain

The present review articulates the syntheses and properties of industrially important disulfide and tetrasulfide polymers. The diselenide and ditelluride polymers have also been reviewed, for the first time, so that a comprehensive view on the polymers containing group VIA elements can be obtained. The latter two polymers are gaining considerable current attention due to their semi-conducting properties. The emphasis has been made to sift through the developments in the last ten years or so to get the latest flavour in these rapidly developing polymers. We have also attempted to bring to the fore several contradicting results, like, for example, the crystallinity of ditelluride polymers, to clear the mist in such reports. We hope that this review will help those working in the field to assess the progress achieved in this area and that it may also provide useful orientation for those who wish to become involved.

Synthesis and characterization of photo-crosslinkable main-chain liquid-crystalline polymers containing bis(benzylidene)cycloalkanone units

A series of new photo-crosslinkable main-chain liquid-crystalline polymers containing bis(benzylidene)cycloalkanone units have been studied. These units in the polymers function as mesogens as well as photoactive centres. Polyesters with three different bis(4-hydroxybenzylidene)cycloalkanones corresponding to three cycloalkanones, namely cyclopentanone, cyclohexanone and cycloheptanone, have been prepared. Three dicarboxylic acids with ether linkages, which were derived from oligoethylene oxides, namely triethylene glycol, tetraethylene glycol and pentaethylene glycol, have been used as spacers in these polymers. Polymerization was carried out by both solution and interfacial polycondensation; the latter method gave high-molecular-weight polymers. Structural characterizations were done by ultra-violet, infra-red and H-1 nuclear magnetic resonance spectroscopy. Liquid-crystalline properties were studied by differential scanning calorimetry and polarized-light optical microscopy. These polymers show a nematic mesophase. Liquid-crystalline transition temperatures were correlated with polymer structure. The decrease in transition temperature with increase in cycloalkanone ring size was explained in terms of the change in geometrical anisotropy of bis(benzylidene)cycloalkanone units. MNDO (modified neglect of differential overlap) calculations were performed on the model compounds, bis(4-acetyloxybenzylidene)cycloalkanone to elucidate the geometrical variation of the mesogenic units with cycloalkanone ring size. Studies of photolysis reveal the two kinds of photoreactions that proceed in these polymer systems, namely photoisomerization and photo-crosslinking. The former reaction disrupts the parallel stacking of the chromophores and is reflected as an increase in the ultra-violet spectral intensity. The favourability of these two reactions depends on the mobility of the polymer chains. When the photolysis was done below T-g, photo-crosslinking dominates over photoisomerization. Above T-g, photoisomerization is followed by photo-crosslinking. The photosensitivity of the polymers decreases with increase in size of the cycloalkanone ring.

Hierarchical Directory-Based Shared Memory Architecture

We describe the design of a directory-based shared memory architecture on a hierarchical network of hypercubes. The distributed directory scheme comprises two separate hierarchical networks for handling cache requests and transfers. Further, the scheme assumes a single address space and each processing element views the entire network as contiguous memory space. The size of individual directories stored at each node of the network remains constant throughout the network. Although the size of the directory increases with the network size, the architecture is scalable. The results of the analytical studies demonstrate superior performance characteristics of our scheme compared with those of other schemes.

On the problem of spurious patterns in neural associative memory models

The problem of spurious patterns in neural associative memory models is discussed, Some suggestions to solve this problem from the literature are reviewed and their inadequacies are pointed out, A solution based on the notion of neural self-interaction with a suitably chosen magnitude is presented for the Hebb learning rule. For an optimal learning rule based on linear programming, asymmetric dilution of synaptic connections is presented as another solution to the problem of spurious patterns, With varying percentages of asymmetric dilution it is demonstrated numerically that this optimal learning rule leads to near total suppression of spurious patterns. For practical usage of neural associative memory networks a combination of the two solutions with the optimal learning rule is recommended to be the best proposition.