60 resultados para Klein-Gordon disordered Hamiltonian


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An invariant imbedding method yields exact analytical results for the distribution of the phase theta (L) of the reflection amplitude and for low-order resistance moments (pn) for a disordered conductor of length L in the quasi-metallic regime L<

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Given a Hamiltonian system, one can represent it using a symplectic map. This symplectic map is specified by a set of homogeneous polynomials which are uniquely determined by the Hamiltonian. In this paper, we construct an invariant norm in the space of homogeneous polynomials of a given degree. This norm is a function of parameters characterizing the original Hamiltonian system. Such a norm has several potential applications. (C) 2010 Elsevier Inc. All rights reserved.

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We have derived explicitly, the large scale distribution of quantum Ohmic resistance of a disordered one-dimensional conductor. We show that in the thermodynamic limit this distribution is characterized by two independent parameters for strong disorder, leading to a two-parameter scaling theory of localization. Only in the limit of weak disorder we recover single parameter scaling, consistent with existing theoretical treatments.

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We observe a sharp feature in the ultra-low-temperature magnetoconductivity of degenerately doped Ge:Sb at H∼25 kOe, which is robust up to at least three times the critical density for the insulator-metal transition. This field corresponds to a low-energy scale characteristic of the special nature of antimony donors in germanium. Its presence and sensitivity to uniaxial stress confirm the notion of metallic impurity bands in doped germanium.

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Ground-state properties of the two-dimensional Hubbard model with point-defect disorder are investigated numerically in the Hartree-Fock approximation. The phase diagram in the p(point defect concentration)-delta(deviation from half filling) plane exhibits antiferromagnetic, spin-density-wave, paramagnetic, and spin-glass-like phases. The disorder stabilizes the antiferromagnetic phase relative to the spin-density-wave phase. The presence of U strongly enhances the localization in the antiferromagnetic phase. The spin-density-wave and spin-glass-like phases are weakly localized.

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An exact numerical calculation of ensemble-averaged length-scale-dependent conductance for the one-dimensional Anderson model is shown to support an earlier conjecture for a conductance minimum. The numerical results can be understood in terms of the Thouless expression for the conductance and the Wigner level-spacing statistics.

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The shear alignment of an initially disordered lamellar phase is examined using lattice Boltzmann simulations of a mesoscopic model based on a free-energy functional for the concentration modulation. For a small shear cell of width 8 lambda, the qualitative features of the alignment process are strongly dependent on the Schmidt number Sc = nu/D (ratio of kinematic viscosity and mass diffusion coefficient). Here, lambda is the wavelength of the concentration modulation. At low Schmidt number, it is found that there is a significant initial increase in the viscosity, coinciding with the alignment of layers along the extensional axis, followed by a decrease at long times due to the alignment along the flow direction. At high Schmidt number, alignment takes place due to the breakage and reformation of layers because diffusion is slow compared to shear deformation; this results in faster alignment. The system size has a strong effect on the alignment process; perfect alignment takes place for a small systems of width 8 lambda and 16 lambda, while a larger system of width 32 lambda does not align completely even at long times. In the larger system, there appears to be a dynamical steady state in which the layers are not perfectly aligned-where there is a balance between the annealing of defects due to shear and the creation due to an instability of the aligned lamellar phase under shear. We observe two types of defect creation mechanisms: the buckling instability under dilation, which was reported earlier, as well as a second mechanism due to layer compression.

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Amorphous carbon films are prepared by the pyrolysis of Tetra Chloro Phthalic Anhydride (TCPA) at different temperatures (700 degrees C to 900 degrees C). DC Conductivity measurements are done on the films in the temperature range 300K to 4.2K. It shows an activated temperature dependence with a small activation energy (0.02eV to 0.003eV). Variable range hopping is observed at low temperatures. The films are characterised by XRD, SEM, TEM, AFM and microRaman. The electronic structure of the film is used to explain the electrical behaviour.

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We consider a one-dimensional mesoscopic Hubbard ring with and without disorder and compute charge and spin stiffness as a measure of the permanent currents. For finite disorder we identify critical disorder strength beyond which the charge currents in a system with repulsive interactions are larger than those for a free system. The spin currents in the disordered repulsive Hubbard model are enhanced only for small U, where the magnetic state of the system corresponds to a charge-density wave pinned to the impurities. For large U, the state of the system corresponds to localized isolated spins and the spin currents are found to be suppressed. For the attractive Hubbard model we find that the charge currents are always suppressed compared to the free system at all length scales.

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We consider a one-dimensional Hubbard model in the presence of disorder. We compute the charge stiffness for a mesoscopic ring as a function of the size L, which is a measure of the persistent currents. We find that for finite disorder the persistent currents of the system with repulsive interactions are larger than those of the system with attractive interactions. This counterintuitive result is due to the fact that local-density fluctuations are reduced in the presence of repulsive interactions.

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There exist several standard numerical methods for integrating ordinary differential equations. However, if one is interested in integration of Hamiltonian systems, these methods can lead to wrong results. This is due to the fact that these methods do not explicitly preserve the so-called 'symplectic condition' (that needs to be satisfied for Hamiltonian systems) at every integration step. In this paper, we look at various methods for integration that preserve the symplectic condition.

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We study phase transitions in the colossal-magnetoresistive manganites by using a mean-field theory both at zero and non-zero temperatures. Our Hamiltonian includes double-exchange, superexchange, and Hubbard terms with on-site and nearest-neighbour Coulomb interaction, with the parameters estimated from earlier density-functional calculations. The phase diagrams show magnetic and charge-ordered (or charge-disordered) phases as a result of the competition between the double-exchange, superexchange, and Hubbard terms, the relative effects of which are sensitively dependent on parameters such as doping, bandwidth, and temperature. In accord with the experimental observations, several important features are reproduced from our model, namely, (i) a phase transition from an insulating, charge-ordered antiferromagnetic to a metallic, charge-disordered ferromagnetic state near dopant concentration x = 1/2, (ii) the reduction of the transition temperature TAF-->F by the application of a magnetic field, (iii) melting of the charge order by a magnetic field, and (iv) phase coexistence for certain values of temperature and doping. An important feature, not reproduced in our model, is the antiferromagnetism in the electron-doped systems, e.g., La1-xCaxMnO3 over the entire range of 0.5 less than or equal to x less than or equal to 1, and we suggest that a multi-band model which includes the unoccupied t(2g) orbitals might be an important ingredient for describing this feature.

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We consider the Finkelstein action describing a system of spin-polarized or spinless electrons in 2+2epsilon dimensions, in the presence of disorder as well as the Coulomb interactions. We extend the renormalization-group analysis of our previous work and evaluate the metal-insulator transition of the electron gas to second order in an epsilon expansion. We obtain the complete scaling behavior of physical observables like the conductivity and the specific heat with varying frequency, temperature, and/or electron density. We extend the results for the interacting electron gas in 2+2epsilon dimensions to include the quantum critical behavior of the plateau transitions in the quantum Hall regime. Although these transitions have a very different microscopic origin and are controlled by a topological term in the action (theta term), the quantum critical behavior is in many ways the same in both cases. We show that the two independent critical exponents of the quantum Hall plateau transitions, previously denoted as nu and p, control not only the scaling behavior of the conductances sigma(xx) and sigma(xy) at finite temperatures T, but also the non-Fermi-liquid behavior of the specific heat (c(v)proportional toT(p)). To extract the numerical values of nu and p it is necessary to extend the experiments on transport to include the specific heat of the electron gas.