83 resultados para High power factor


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Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

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An optical-phonon-limited velocity model has been employed to investigate high-field transport in a selection of layered 2-D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities, and intrinsic cutoff frequencies as a function of carrier density have been predicted, thus providing a benchmark for the optical-phonon-limited high-field performance limits of these materials. The optical-phonon-limited carrier velocities for a selection of multi-layers of transition metal dichalcogenides and black phosphorus are found to be modest compared to their n-channel silicon counterparts, questioning the utility of biasing these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency, high-power devices, subject to the experimental realization of high carrier densities, primarily due to its large optical-phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with the predicted values. The temperature dependence of the measured v(sat) is discussed and compared with the theoretically predicted dependence over a range of temperatures.

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The inverse coupled dependence of electrical conductivity and thermopower on carrier concentration presents a big challenge in achieving a high figure of merit. However, the simultaneous enhancement of electrical conductivity and thermopower can be realized in practice by carefully engineering the electronic band structure. Here by taking the example of Bi2S3, we report a simultaneous increase in both electrical conductivity and thermopower under hydrostatic pressure. Application of hydrostatic pressure enables tuning of electronic structure in such a way that the conductivity effective mass decreases and the density of states effective mass increases. This dependence of effective masses leads to simultaneous enhancement in electrical conductivity and thermopower under n-type doping leading to a huge improvement in the power factor. Also lattice thermal conductivity exhibits very weak pressure dependence in the low pressure range. The large power factor together with low lattice thermal conductivity results in a high ZT value of 1.1 under n-type doping, which is nearly two times higher than the previously reported value. Hence, this pressure-tuned behaviour can enable the development of efficient thermoelectric devices in the moderate to high temperature range. We further demonstrate that similar enhancement can be observed by generating chemical pressure by doping Bi2S3 with smaller iso-electronic elements such as Sb at Bi sites, which can be achieved experimentally.

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The Ultra Wide Band (UWB) system has been a subject of research in the last few years due to its utility in various high power electromagnetic applications. Due to its simplicity in design and fabrication, the Half Impulse Radiating Antenna (HIRA) based UWB system has attracted many researchers. Effectiveness of a UWB system, in terms of the bandwidth of the radiated pulse depends on the duration of the radiated field which is typically of sub nanosecond regime. This duration in turn depends on the closure time of the switch used in the UWB pulsed power source. This paper presents the work carried out on the pressurised gas switch of a 50 kV pulsed power system of a HIRA based UWB system. The aim of the present work is to establish the relationship between the pulser switch breakdown voltage and gas pressure, rise time and gas pressure as well as the dependency of the Pulse Repetition Rate (PRR) on the switch breakdown voltage.

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Electrochemical capacitors are electrochemical devices with fast and highly reversible charge-storage and discharge capabilities. The devices are attractive for energy storage particularly in applications involving high-power requirements. Electrochemical capacitors employ two electrodes and an aqueous or a non-aqueous electrolyte, either in liquid or solid form; the latter provides the advantages of compactness, reliability, freedom from leakage of any liquid component and a large operating potential-window. One of the classes of solid electrolytes used in capacitors is polymer-based and they generally consist of dry solid-polymer electrolytes or gel-polymer electrolyte or composite-polymer electrolytes. Dry solid-polymer electrolytes suffer from poor ionic-conductivity values, between 10(-8) and 10(-7) S cm(-1) under ambient conditions, but are safer than gel-polymer electrolytes that exhibit high conductivity of ca. 10(-3) S cm(-1) under ambient conditions. The aforesaid polymer-based electrolytes have the advantages of a wide potential window of ca. 4 V and hence can provide high energy-density. Gel-polymer electrolytes are generally prepared using organic solvents that are environmentally malignant. Hence, replacement of organic solvents with water in gel-polymer electrolytes is desirable which also minimizes the device cost substantially. The water containing gel-polymer electrolytes, called hydrogel-polymer electrolytes, are, however, limited by a low operating potential-window of only about 1.23 V. This article reviews salient features of electrochemical capacitors employing hydrogel-polymer electrolytes.

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The solidification behaviour is described of two pure metals (Bi and Ni) and two eutectic alloys (A1-Ge and AI-Cu) under nonequilibrium conditions, in particular the microsecond pulsed laser surface melting. The resolidification behaviour of bismuth shows that epitaxial regrowth is the dominant mechanism. For mixed grain size, regrowth of larger grains dominates the microstructure and can result in the development of texture. In the case of nickel, epitaxial growth has been noted. For lower energy pulse-melted pool, grain refinement takes place, indicating nucleation of fresh nickel grains. The A1-Ge eutectic alloy indicates the nucleation and columnar growth of a metastable monoclinic phase from the melt-substrate interface at a high power density laser irradiation. An equiaxed microstructure containing the same monoclinic phase is obtained at a lower power density laser irradiation. It is shown that the requirement of solution partition acts as a barrier to eutectic regrowth from the substrate. The laser-melted pool of A1-Cu eutectic alloy includes columnar growth of c~-A1 and 0-A12Cu phase followed by the dendritic growth of A12Cu phase with ct-Al forming at the interdendritic space. In addition, a banded microstructure was observed in the resolidified laser-melted pool.

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Thyristor forced commutated AC/DC convertors are useful for improving the power factor and waveform of AC-side line current. These are controlled through pulse-width modulation schemes for best performance. However, the 3-phase versions impose restrictions on the PWM strategies that can be implemented for excellent harmonic rejection. This paper presents new PWM control strategies for the 3-phase converters and compares them along with the conventional 4-pulse PWM strategy for harmonic elimination. Finally, two new PWM strategies are shown to be the best, for which oscillograms are presented from actual implementation.

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This paper proposes a multilevel inverter configuration which produces a hexagonal voltage space vector structure in the lower modulation region and a 12-sided polygonal space vector structure in the overmodulation region. A conventional multilevel inverter produces 6n plusmn 1 (n = odd) harmonics in the phase voltage during overmodulation and in the extreme square-wave mode of operation. However, this inverter produces a 12-sided polygonal space vector location, leading to the elimination of 6n plusmn 1 (n = odd) harmonics in the overmodulation region extending to a final 12-step mode of operation with a smooth transition. The benefits of this arrangement are lower losses and reduced torque pulsation in an induction motor drive fed from this converter at higher modulation indexes. The inverter is fabricated by using three conventional cascaded two-level inverters with asymmetric dc-bus voltages. A comparative simulation study of the harmonic distortion in the phase voltage and associated losses in conventional multilevel inverters and that of the proposed inverter is presented in this paper. Experimental validation on a prototype shows that the proposed converter is suitable for high-power applications because of low harmonic distortion and low losses.

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This paper proposes a multilevel inverter which produces hexagonal voltage space vector structure in lower modulation region and a 12-sided polygonal space vector structure in the over-modulation region. Normal conventional multilevel inverter produces 6n +/- 1 (n=odd) harmonics in the phase voltage during over-modulation and in the extreme square wave mode operation. However, this inverter produces a 12-sided polygonal space vector location leading to the elimination of 6n 1 (n=odd) harmonics in over-modulation region extending to a final 12-step mode operation. The inverter consists of three conventional cascaded two level inverters with asymmetric dc bus voltages. The switching frequency of individual inverters is kept low throughout the modulation index. In the low speed region, hexagonal space phasor based PWM scheme and in the higher modulation region, 12-sided polygonal voltage space vector structure is used. Experimental results presented in this paper shows that the proposed converter is suitable for high power applications because of low harmonic distortion and low switching losses.

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A simple multiple pulsewidth modulated (MPWM) ac chopper using power transistors for 3-ý power control is discussed. 120ý chopping period is used for main transistors so that the circuit can accommodate resistive and lagging or leading power factor loads. Only 1-ý sensing is used for 3-ý control. An alternate economical power and control schemes for 3-ý MPWM ac choppers suitable only for resistive loads is also suggested. The experimental results for 12 choppings per cycle are given.

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In this paper, a novel 12-sided polygonal space vector structure is proposed for an induction motor drive. The space vector pattern presented in this paper consists of two 12-sided concentric polygons with the outer polygon having a radius double the inner one. As compared to previously reported 12-sided polygonal space vector structures, this paper subdivides the space vector plane into smaller sized triangles. This helps in reducing the switching frequency of the inverters without deteriorating the output voltage quality. It also reduces the device ratings and dv/dt stress on the devices to half. At the same time, other benefits obtained from the existing 12-sided space vector structure, such as increased linear modulation range and complete elimination of 5th and 7th order harmonics in the phase voltage, are also retained in this paper. The space vector structure is realized by feeding an open-end induction motor with two conventional three-level neutral point clamped (NPC) inverters with asymmetric isolated dc link voltage sources. The neutral point voltage fluctuations in the three-level NPC inverters are eliminated by utilizing the switching state multiplicities for a space vector point. The pulsewidth modulation timings are calculated using sampled reference waveform amplitudes and are explained in detail in this paper. Experimental verification on a laboratory prototype shows that this configuration may be considered suitable for high power drives.

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A simple multiple pulsewidth modulated (MPWM) ac chopper using power transistors for 3-¿ power control is discussed. 120° chopping period is used for main transistors so that the circuit can accommodate resistive and lagging or leading power factor loads. Only 1-¿ sensing is used for 3-¿ control. An alternate economical power and control schemes for 3-¿ MPWM ac choppers suitable only for resistive loads is also suggested. The experimental results for 12 choppings per cycle are given.

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The lead-acid battery is often the weakest link in photovoltaic (PV) installations. Accordingly, various versions of lead-acid batteries, namely flooded, gelled, absorbent glass-mat and hybrid, have been assembled and performance tested for a PV stand-alone lighting system. The study suggests the hybrid VRLA batteries, which exhibit both the high power density of absorbent glass-mat design and the improved thermal properties of the gel design, to be appropriate for such an application. Among the VRLA-type batteries studied here water loss for the hybrid VRLA batteries is minimal and charge-acceptance during the service at high temperatures is better in relation to their AGM counterparts.

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A novel dodecagonal space vector structure for induction motor drive is presented in this paper. It consists of two dodecagons, with the radius of the outer one twice the inner one. Compared to existing dodecagonal space vector structures, to achieve the same PWM output voltage quality, the proposed topology lowers the switching frequency of the inverters and reduces the device ratings to half. At the same time, other benefits obtained from existing dodecagonal space vector structure are retained here. This includes the extension of the linear modulation range and elimination of all 6+/-1 harmonics (n=odd) from the phase voltage. The proposed structure is realized by feeding an open-end winding induction motor with two conventional three level inverters. A detailed calculation of the PWM timings for switching the space vector points is also presented. Simulation and experimental results indicate the possible application of the proposed idea for high power drives.

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A simple, low-cost, constant frequency, analog controller is proposed for the front-end half-bridge rectifier of a single-phase transformerless UPS system to maintain near unity power factor at the input and zero dc-offset voltage at the output. The controller generates the required gating pulses by comparing the input current with a periodic, bipolar, linear carrier without sensing the input voltage. Two voltage controllers and a single integrator with reset are used to generate the required carrier. All the necessary control operations can be performed without using any PLL, multiplier and/or divider. The controller can be fabricated as a single integrated circuit. The control concept is validated through simulation and also experimentally on an 800W half-bridge rectifier. Experimental results are presented for ac-dc application, and also for ac-dc-ac UPS application with both sinusoidal and nonlinear loads. The simulation and experimental results agree well.